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Annual IEEE Conference on Applied Power Electronics Conference and Exposition (APEC)

作者： Rophina Li Zhaozheng Hou Tiantian Liu Mohamed Elshazly Sut Leung Xingqiang Peng Wai Tung Ng The Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto Toronto Canada Huawei Digital Energy Technology Co Shenzhen China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China

A dynamic gate driving strategy is proposed to control the turn-off $\boldsymbol{dV}_{\boldsymbol{DS}}/\boldsymbol{dt}$ transients for SiC power MOSFETs. Compared with a conventional gate driver with fixed gate resistance, dynamic gate drive can effectively suppress the VDS overshoot without a significant reduction in switching speed or increase in turn-off loss. In double pulse testing, using a 40 A, 1200 V SiC power MOSFET, the dynamic gate driver exhibits a 78% reduction in turn-off energy loss $(\boldsymbol{E}_{off})$ when compared to a conventional gate driver for a 35% overshoot. Moreover, it is also found that SiC power MOSFETs require much more stringent timing resolution (< 1 ns) for the dynamic gate driving pattern when compared to Si IGBTs with the similar current and voltage ratings to fine tune $\boldsymbol{dV}_{\boldsymbol{DS}}/\boldsymbol{dt}$ . This paper demonstrates and analyzes the advantages of dynamic gate driving for SiC power MOSFETs with precision timing.

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Low-loss silicon optical modulator using doping compensation method at 2 µm wavelength band

Low-loss silicon optical modulator using doping compensation...

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Global Intelligent Industry Conference 2020

作者： Hu, Heming Zhang, Xindan Gu, Miaomiao Liu, Yufei Jia, Lianxi Feng, Song Fang, Qing Chen, Hua College of Science Kunming University of Science and Technology Kunming650500 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China College of Science Xi’an polytechnic University Xi’an710048 China

ISBN: (数字)9781510643956

ISBN: (纸本)9781510643949

Compared with the optical modulator based on 1310 nm and 1550 nm wavelength band, the silicon-based modulator at 2 µm band has a higher absorption loss, since the free carrier effect is more significant in the 2 µm band. In this paper, we demonstrate an optical modulator at 2 µm wavelength band, using a doping compensation method. We reduce absorption loss and keep the modulation extinction ratio at a high level through optimizing waveguide width, PN junction offset and compensated area. With doping compensation, the modulator has an absorption loss by PN junction of 2.8 dB/cm at 0 V and an extinction ratio of 14.2 dB at bitrates of 40 Gb/s. © 2021 SPIE

关键词： Light modulators

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A High-Performance Electrocatalyst Based on Hybrid Nife-Pyromellitic Acid for Oxygen Evolution Reaction

SSRN

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SSRN 2023年

作者： Li, Lin Li, Guoqi Li, Wenlong Li, Fusheng Yuan, Chunze Zhang, Nian Zhang, Hui Weng, Tsu-Chien School of Physical Science and Technology ShanghaiTech University Shanghai201210 China Dalian116024 China Center for Transformative Science ShanghaiTech University Shanghai201210 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

The migration of protons during the oxygen evolution reaction (OER) is a key factor that affects the performance of OER catalysts. To enhance proton transportation, we designed a catalyst based on nickel/iron-pyromellitic acid coordination polymer (NiFe-PMA) prepared by the electrochemical deposition method. This catalyst exhibited a low overpotential of 188 mV at a current density of 10/mA cm-2, a Tafel slope of 28.2 mV dec-1, and long-term stability for 30 days with a current of 50/mA cm-2. We characterized the NiFe-PMA catalyst using various techniques, including Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and inductively coupled plasma-optical emission spectrometry (ICP-OES). Our results showed that NiFe-PMA contains nickel, iron atoms, and both coordinated and uncoordinated carboxylate groups. Additionally, XPS data confirmed that carboxylate ligands could adjust the outer electronic structure of metal ions, resulting in the high valence state of Ni in NiFe-PMA. The result of XAS indicated that the nickel atoms present in the catalyst might be easier to maintain a higher chemical state. Further investigations using kinetic isotope effects (KIEs) and proton inventory revealed that the uncoordinated carboxylic protons played a crucial role in receiving protons during the OER, which promoted the proton transfer of the rate-determining step of the OER. Our novel electrocatalysts provide a new strategy for designing more active and cost-effective catalysts for the OER. © 2023, The Authors. All rights reserved.

关键词： Electrocatalysts

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A Single-Photon-Sensitivity Spectrometer Based on Metasurfaces

A Single-Photon-Sensitivity Spectrometer Based on Metasurfac...

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CLEO: QELS_Fundamental Science, QELS 2022

作者： Zheng, Jingyuan Xiao, You Hu, Mingzhong Li, Hao You, Lixing Zhang, Wei Huang, Yidong Beijing Innovation Center for Future Chips Department of Electronic Engineering Tsinghua University Beijing100084 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Frontier Science Center for Quantum Information Beijing100084 China Beijing Academy of Quantum Information Sciences Beijing100193 China

We demonstrate a single-photon-sensitivity spectrometer based on metasurfaces and superconducting nanowire single-photon detectors with 1.5% ~ 9.5% total detection efficiency at 1100 nm ~ 1700 nm. © Optica Publis... 详细信息

ISBN: (纸本)9781557528209

关键词： Spectrometers

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Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing

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Chinese Physics B 2020年第7期29卷 481-488页

作者： Shuyan Zhao Yuxin Song Hao Liang Tingting Jin Jiajie Lin Li Yue Tiangui You Chang Wang Xin Ou Shumin Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049 China Department of Microtechnology and Nanoscience Chalmers University of TechnologyGothenburg 41296Sweden

Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on *** thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam *** grown on GaAsOI are more dangerous than those on InPOI due to a limited critical *** intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest *** simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial *** without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.

关键词： Ⅲ-VOI template finite element method(FEM) critical thickness

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Investigation on Premature Breakdown Mechanisms in AlGaN/GaN HEMTs by TCAD simulations 15

Investigation on Premature Breakdown Mechanisms in AlGaN/GaN...

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15th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2020

作者： Shen, Lingyan Cheng, Xinhong Zheng, Li Luo, Qi Wang, Zhongjian State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

ISBN: (纸本)9781728162355

Premature breakdown of GaN HEMTs is a common phenomenon which limits their application for power switching. However, the breakdown mechanisms are rarely discussed before. In this paper, we investigate critical factors for dominant breakdown mechanisms in AlGaN/GaN HEMTs by TCAD simulation and give a clear picture of different mechanisms depending on these factors. Three leakage paths at off state are revealed in this paper. Expanding the device size makes no sense for improving breakdown voltage in specific conditions. Reducing UID concentration and improving the quality of GaN buffer is critical. © 2020 IEEE.

关键词： Gallium nitride

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Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology

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Science China(Information Sciences) 2023年第11期66卷 313-314页

作者： Hangning SHI Ailun YI Jiaxin DING Xudong LIU Qingcheng QIN Juemin YI Junjie HU Miao WANG Demin CAI Jianfeng WANG Ke XU Fengwen MU Tadatomo SUGA René HELLER Mao WANG Shengqiang ZHOU Wenhui XU Kai HUANG Tiangui YOU Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences University of Chinese Academy of Sciences School of Materials and Chemistry University of Shanghai for Science and Technology Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou Nanowin Science and Technology Co. Ltd. SABers Co. Ltd. Collaborative Research Center Meisei University Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials Research College of Physics and Electronic Engineering Sichuan Normal University

Ion-cutting technology is an ingenious solution to the highquality heterogeneous integration of Ga N thin films with CMOS-compatible Si(100) substrate, which provides a platform to combine Ga N-based optoelectronics, high-frequency and high-power electronics with digital signal processing,logic computation, and control of Si(100) CMOS [1].

关键词： Gallium nitride

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Modeling of Hot Carrier Injection on Gate-Induced Drain Leakage in PDSOI nMOSFET

Modeling of Hot Carrier Injection on Gate-Induced Drain Leak...

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2021 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2021

作者： Qian, Yijun Gao, Yuan Shukla, Amit Kumar Wu, Tao Wei, Xing Lu, Kai Yang, Yumeng Shanghai Tech University Shanghai Engineering Research Center of Energy Efficient and Custom AI IC School of Information Science and Technology Shanghai201210 China Chinese Academy of Sciences State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Shanghai200050 China

ISBN: (纸本)9781665417471

In this paper, the gate-induced drain leakage (GIDL) current in partial depleted silicon on insulator nMOSFET was measured under different hot carrier injection conditions. With the increase of stress time, the GIDL current increases steeply under channel hot carrier condition due to the dominant electron injection into oxide and the consequent generation of interface traps. On the other hand, under the drain avalanche hot carrier condition, the additional hole injection partially cancels with the electrons, leading to a mild increase of GIDL current. By taking into account the interface traps induced threshold voltage shift, we further proposed a modified model to fit the experimental data. © 2021 IEEE.

关键词： Drain current

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Natural Graphene Plasmonic Nano-Resonators for Highly Active Surface-Enhanced Raman Scattering Platforms

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Energy & Environmental Materials 2023年第5期6卷 269-280页

作者： Xiaoqiang Feng Zhiduo Liu Guanglin Zhang Shan Zhang Shuiping Huang Zhengyi He Genwang Wei Siwei Yang Yangguang Zhu Caichao Ye Cheng-Te Lin Guqiao Ding Gang Wang Department of Microelectronic Science and Engineering School of Physical Science andNingbo UniversityNingbo 315211China State Key Laboratory of Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Academy for Advanced Interdisciplinary Studies&Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and TechnologyShenzhen 518055China Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China

Highly sensitive and uniform three-dimensional(3D)hybrid heterogeneous structures for use in surface-enhanced Raman scattering(SERS)experiments were fabricated by sequentially decorating high-quality,ultra-clean,graphene quantum dots(GQDs)and Ag nanoparticles(Ag-NPs)onto ***-difference time-domain calculations and scanning Kelvin probe microscopy were used to verify that the Ag-NPs/GQDs/3D-graphene system facilitates substantial electromagnetic enhancement(due to the occurrence of two kinds of"gaps"between the Ag-NPs that form 3D"hot spots")and additional chemical enhancement(in detecting someπ-conjugated molecules).The SERS mechanism was explored in further detail via experimental analysis and confirmed by performing theoretical *** large surface area of the 3D substrate(due to the large specific surface areas of the GQDs and 3D-graphene)results in a better enrichment effect which helps produce lower detection *** particular,the detection limits obtained using the Ag-NPs/GQDs/3D-graphene platform can reach 10^(-11)M for rhodamine 6G,10^(-10)M for methylene blue and dopamine,and 10^(-7)M for tetramethylthiuram disulfide and methyl parathion in apple juice(these are superior to most of the results reported using graphene-based SERS substrates).In summary,the 3D-platform Ag-NPs/GQDs/3D-graphene/Si shows outstanding SERS *** therefore has excellent application prospects in biochemical molecular detection and food safety monitoring.

关键词： Ag-NPs/GQDs/3D-graphene chemical enhancement dopamine Electromagnetic enhancement

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Superconducting X-ray detectors

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Science China(Information Sciences) 2020年第8期63卷 91-109页

作者： Can YANG Mengting SI Lixing YOU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT)Chinese Academy of Sciences CAS Center for Excellence in Superconducting Electronics (CENSE) Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Zhejiang Photon Technology Co.Ltd. Guigu Science Park

Owing to their high sensitivity and low noise, superconducting detectors are used for photon detection from microwave to high-energy particles. X-ray detection plays an important role in materials analysis, astronomy, and medical radiography, which require high efficiency as well as high energy resolution. However, traditional semiconducting detectors cannot fulfill these requirements. In this article, we review superconducting quantum detectors for X-ray detection, including transition-edge sensor(TES), superconducting tunneling junctions(STJs), kinetic inductance detectors(KIDs) and superconducting nanowire single-photon detectors(SNSPDs), and introduce the physical structures, working mechanisms, and device behaviors of these detectors. We also review their performances regarding X-ray detection and analyze their respective characteristics. According to recent progress and the requirements of various applications, possible improvement of superconducting detectors for X-rays are discussed.

关键词： superconducting X-ray detectors transition-edge sensors superconducting tunneling junctions kinetic inductance detectors superconducting nanowire single-photon detector

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