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Quasi-one-dimensional characters in topological semimetal TaNiTe5

Chinese Physics B 2023年第5期 670-674页

作者：马妮王德阳黄本锐李凯仪宋靖鹏刘建忠梅红萍叶茂李昂 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences School of Physical Science and Technology Shanghai Tech University

One-dimensional（1D） topological insulators are superior for low-dissipation applications owing to the 1D character of surface states where scatterings other than prohibited backscattering are further restricted. Among the proposed candidates for 1D topological materials, TaNiTe5has attracted intensive attention for its quasi-one-dimensional（quasi-1D） crystalline structure. In this study, we identify the chain-like construction and anisotropic electronic states on TaNiTe5surface with scanning tunneling microscopy. The electron scatterings are largely suppressed even with chromium impurities deposited on the surface and magnetic field applied normal to the surface, which endows TaNiTe5great potential for low-dissipation spintronic applications.

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Resistivity Modulation of Perovskite Samarium Nickelate with High-Valence Cations and the Underlying Mechanism

SSRN

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SSRN 2023年

作者： Wang, Xingyuan Zhang, Xuefeng Sun, Yibo Zhang, Hui Pei, Cuiying Zhao, Mohan Zhou, Jiayin Tang, Qijuan Chen, Huiqi Xi, Bingxu Qi, Yanpeng Liu, Zhi Li, Gang Guan, Xiaofei School of Physical Science and Technology ShanghaiTech University Shanghai201210 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center for Transformative Science ShanghaiTech University Shanghai201210 China ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai201210 China

Perovskite rare earth nickelates possess the electronic phase transition property that can be harnessed for a multitude of exciting applications. Herein, we report the use of high-valence cations (Zn2+ and Al3+) to reconstruct the electronic band structure of samarium nickelate (SmNiO3) and realize reversible resistivity modulation. Under positive gate voltage, the resistivity of SmNiO3 exhibits a colossal increase upon the Zn2+ intercalation and the concurrent electron doping. Under negative gate voltage, the Zn2+ ions are extracted and the resistivity decreases significantly. The resistivity modulation using Zn2+ is non-volatile. Electrochromic behavior is also observed during the Zn2+ insertion and extraction. The electronic phase transition is characterized using various techniques. Moreover, the trivalent Al3+ ions are also investigated as charge carriers to modulate the resistivity of SmNiO3 in a volatile manner. First-principles density functional theory calculations reveal the effect of electron doping on the electronic band structure. The resistivity change of SmNiO3 is mainly attributed to the structural distortion induced by electron doping, rather than the Mott-like insulation. This work demonstrates the feasibility of reversible resistivity modulation of SmNiO3 with the use of high-valence cations under applied voltage, underscoring the potential for applications in novel emerging electronic devices. © 2023, The Authors. All rights reserved.

关键词： Perovskite

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High-Q microresonators on 4H-silicon-carbide-on-insulator platform for nonlinear photonics

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Light(Science & Applications) 2021年第8期10卷 1474-1484页

作者： Chengli Wang Zhiwei Fang Ailun Yi Bingcheng Yang Zhe Wang Liping Zhou Chen Shen Yifan Zhu Yuan Zhou Rui Bao Zhongxu Li Yang Chen Kai Huang Jiaxiang Zhang Ya Cheng Xin Ou State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences200050 ShanghaiChina. The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina The Extreme Optoelearomechanics Laboratory(XXL) School of Physics and Electronic ScienceEast China Normal University200241 ShanghaiChina. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science Shanghai Institute of Optics and Fine MechanicsChinese Academy of Sciences201800 ShanghaiChina

The realization of high-quality(Q)resonators regardless of the underpinning material platforms has been a ceaseless pursuit,because the high-Q resonators provide an extreme environment for confining light to enable observations of many nonlinear optical phenomenon with high ***,photonic microresonators with a mean Q factor of 6.75×10^(6)were demonstrated on a 4H-silicon-carbide-on-insulator(4H-SiCOI)platform,as determined by a statistical analysis of tens of *** these devices,broadband frequency conversions,including second-,third-,and fourth-harmonic generations have been *** Raman lasing has also been demonstrated in our SiC microresonator for the first time,to the best of our ***,by engineering the dispersion properties of the SiC microresonator,we have achieved broadband Kerr frequency combs covering from 1300 to *** demonstration represents a significant milestone in the development of SiC photonic integrated devices.

关键词： resonator carbide nonlinear

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Quantum interference with independent single-photon sources over 300 km fiber

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Advanced Photonics 2022年第6期4卷 64-70页

作者： Xiang You Ming-Yang Zheng Si Chen Run-Ze Liu Jian Qin Mo-Chi Xu Zheng-Xuan Ge Tung-Hsun Chung Yu-Kun Qiao Yang-Fan Jiang Han-Sen Zhong Ming-Cheng Chen Hui Wang Yu-Ming He Xiu-Ping Xie Hao Li Li-Xing You Christian Schneider Juan Yin Teng-Yun Chen Mohamed Benyouce Yong-Heng Huo Sven Höfling Qiang Zhang Chao-Yang Lu Jian-Wei Pan University of Science and Technology of China School of Cyberspace SecurityHefeiChina University of Science and Technology of China Hefei National Laboratory for Physical Sciences at MicroscaleDepartment of Modern PhysicsHefeiChina University of Science and Technology of China CAS Centre for Excellence in Quantum Information and Quantum PhysicsShanghaiChina Jinan Institute of Quantum Technology JinanChina Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology(SIMIT)State Key Laboratory of Functional Materials for InformaticsShanghaiChina Universitat Würzburg Technische PhysikPhysikalisches Instität and Wilhelm Conrad Röntgen-Center for Complex Material SystemsWürzburgGermany University of Oldenburg Institute of PhysicsOldenburgGermany University of Kassel Institute of Nanostructure Technologies and AnalyticsCINSaTKasselGermany NYU-ECNU Institute of Physics at NYU Shanghai ShanghaiChina

In the quest to realize a scalable quantum network,semiconductor quantum dots(QDs)offer distinct advantages,including high single-photon efficiency and indistinguishability,high repetition rate(tens of gigahertz with Purcell enhancement),interconnectivity with spin qubits,and a scalable on-chip ***,in the past two decades,the visibility of quantum interference between independent QDs rarely went beyond the classical limit of 50%,and the distances were limited from a few meters to ***,we report quantum interference between two single photons from independent QDs separated by a 302 km optical *** single photons are generated from resonantly driven single QDs deterministically coupled to *** frequency conversions are used to eliminate the QD inhomogeneity and shift the emission wavelength to the telecommunication *** observed interference visibility is 0.670.02(0.930.04)without(with)temporal *** improvements can further extend the distance to∼600 *** work represents a key step to long-distance solid-state quantum networks.

关键词： quantum networks quantum dots solid-state single-photon sources quantum frequency conversion quantum interference

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Reliable Ge_(2)Sb_(2)Te_(5) based phase-change electronic synapses using carbon doping and programmed pulses

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Journal of Materiomics 2022年第2期8卷 382-391页

作者： Qiang Wang Gang Niu Ruobing Wang Ren Luo Zuo-Guang Ye Jinshun Bi Xi Li Zhitang Song Wei Ren Sannian Song Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and InformationTechnologyChinese Academy of Sciences865 Changning RoadShanghai200050China Department of Chemistry and 4D LABS Simon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijing100029China University of Chinese Academy of Sciences Beijing100049China

Hardware electronic synapse and neuro-inspired computing system based on phase change random access memory(PCRAM)have attracted an extensive ***,due to the intrinsic asymmetric reversible phase transition,the defective weight update of PCRAM synapses in aspects of tuning range,linearity and continuity has long required a system-level complexity of circuits and *** cell-level improvements to a great extent may slim the system thus achieving efficient *** report in this work the great enhancement of Ge_(2)Sb_(2)Te_(5)(GST)based PCRAM synapses by combining materials engineering and pulse *** is found that carbon doping in GST retards the rate of phase changing thus increasing the controllability of the conductance,while non-linear programmable pulse excitations can eventually lead to a reliable synaptic potentiation and depression.A set of improved programmable pulse schemes for spike-timing dependent plasticity was then demonstrated,suggesting its potential superiority in flexible programming and reliable data *** methods and results are of great significance for implementing PCRAM electronic synapses and high-performance neuro-inspired computing.

关键词： Programmable synapse Synaptic simulation PCRAM C-doped Ge_(2)Sb_(2)Te_(5) Electronic synapse

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Flux-to-voltage characteristic simulation of superconducting nanowire interference device

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Chinese Physics B 2020年第9期29卷 553-558页

作者： Xing-Yu Zhang Yong-Liang Wang Chao-Lin Lv Li-Xing You Hao Li Zhen Wang Xiao-Ming Xie State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences(CAS)Shanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China CAS Center for Excellence in Superconducting Electronics Shanghai 200050China

Inspired by recent discoveries of the quasi-Josephson effect in shunted nanowire devices,we propose a superconducting nanowire interference device in this study,which is a combination of parallel ultrathin superconducting nanowires and a shunt resistor.A simple model based on the switching effect of nanowires and fluxoid quantization effect is developed to describe the behavior of the *** current-voltage characteristic and flux-to-voltage conversion curves are simulated and discussed to verify the *** parameters of the shunt resistor and inductor are deduced for fabricating the devices.

关键词： superconducting nanowire switching effect flux-to-voltage conversion interference device

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Experimental Mode-Pairing Measurement-Device-Independent Quantum Key Distribution without Global Phase Locking

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Physical Review Letters 2023年第3期130卷 030801-030801页

作者： Hao-Tao Zhu Yizhi Huang Hui Liu Pei Zeng Mi Zou Yunqi Dai Shibiao Tang Hao Li Lixing You Zhen Wang Yu-Ao Chen Xiongfeng Ma Teng-Yun Chen Jian-Wei Pan Hefei National Research Center for Physical Sciences at the Microscale and School of Physical Sciences University of Science and Technology of China Hefei 230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 230026 China Hefei National Laboratory University of Science and Technology of China Hefei Anhui 230088 China Center for Quantum Information Institute for Interdisciplinary Information Sciences Tsinghua University Beijing 100084 China QuantumCTek Corporation Limited Hefei Anhui 230088 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

In the past two decades, quantum key distribution networks based on telecom fibers have been implemented on metropolitan and intercity scales. One of the bottlenecks lies in the exponential decay of the key rate with respect to the transmission distance. Recently proposed schemes mainly focus on achieving longer distances by creating a long-arm single-photon interferometer over two communication parties. Despite their advantageous performance over long communication distances, the requirement of phase locking between two remote lasers is technically challenging. By adopting the recently proposed mode-pairing idea, we realize high-performance quantum key distribution without global phase locking. Using two independent off-the-shelf lasers, we show a quadratic key-rate improvement over the conventional measurement-device-independent schemes in the regime of metropolitan and intercity distances. For longer distances, we also boost the key rate performance by 3 orders of magnitude via 304 km commercial fiber and 407 km ultralow-loss fiber. We expect this ready-to-implement high-performance scheme to be widely used in future intercity quantum communication networks.

关键词： Optical quantum information processing Quantum communication Quantum cryptography Quantum networks Quantum optics

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Gap Structure of 12442-Type KCa2(Fe1-xCox)4As4F2(x=0,0.1)Revealed by Temperature Dependence of Lower Critical Field

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Chinese Physics Letters 2020年第12期37卷 81-85页

作者： Jianan Chu Teng Wang Han Zhang Yixin Liu Jiaxin Feng Zhuojun Li Da Jiang Gang Mu Zengfeng Di Xiaoming Xie State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Shanghai 200050China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

We report an in-depth investigation on the out-of-plane lower critical field Hc1 of the KCa2(Fe1-xCox)4As4F2(12442-type,x=0,0.1).The multi-gap feature is revealed by the kink in the temperature-dependent Hc1(T)curve for the two samples with different doping *** on a simplified two-gap model,the magnitudes of the two gaps are determined to beΔ1=1.2 meV andΔ2=5.0 meV for the sample with x=0,Δ1=0.86 meV andΔ2=2.8 meV for that with x=*** the cobalt doping,the ratio of energy gap to critical transition temperature(Δ/kBTc)remains almost unchanged for the smaller gap and is suppressed by 20%for the larger *** the undoped KCa2Fe4As4F2,the obtained gap sizes are generally consistent with the results of angle-resolved photoemission spectroscopy experiments.

关键词： x=0 doping critical

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Exceeding Two Octave-Spanning Supercontinuum Generation in Integrated as2 S3 Waveguides Pumped by a 2 Μm Fiber Laser

SSRN

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SSRN 2024年

作者： Zhao, Peipei Yang, Lei Xia, Kai Yang, Peilong Wang, Rongping Xu, Peipeng Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Laboratory of Infrared Materials and Devices Advanced Technology Research Institute Ningbo University Zhejiang Ningbo315211 China Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Ningbo315211 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Wuhan National Laboratory for Optoelectronics School of Physics Huazhong University of Science and Technology Wuhan China

In this work, we demonstrate over two octaves-spanning supercontinuum generation in integrated As2S3 chalcogenide glass waveguides pumped by a 2 μm femtosecond fiber laser. The pump laser provides 182 fs pulses at 50 MHz repetition rate. Through optimization of the waveguide dimensions, a broad supercontinuum spectrum spanning from 0.6 to 2.8 μm was achieved using a 4 μm wide, 5 mm long waveguide with 357 mW coupled pump power. The findings showcase the potential of dispersion engineered, integrated As2S3 photonics for realizing compact, efficient on-chip supercontinuum sources for mid-infrared applications. © 2024, The Authors. All rights reserved.

关键词： Pulse repetition rate

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Efficient second-harmonic generation in silicon carbide nanowaveguides

Efficient second-harmonic generation in silicon carbide nano...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Yi Zheng Ailun Yi Chaochao Ye Kresten Yvind Han Zhang Xin Ou Minhao Pu Collaborative Innovation Center for Optoelectronic Science & Technology Shenzhen University Shenzhen China DTU Fotonik Technical University of Denmark Lyngby Denmark State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China

We achieve an ultra-uniform 4-inch SiC-on-insulator wafer for high-yield waveguides. For the first time, we demonstrate second-harmonic generation in a 4H-SiCOI waveguide with conversion efficiency as high as 5.4% W -1 .

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Integrated optics Silicon carbide Waveguide lasers Lasers and electrooptics Frequency conversion Nonlinear optical devices Nanoscale devices

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