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Quantum Key Distribution over 658 km Fiber with Distributed Vibration Sensing

Physical Review Letters 2022年第18期128卷 180502-180502页

作者： Jiu-Peng Chen Chi Zhang Yang Liu Cong Jiang Dong-Feng Zhao Wei-Jun Zhang Fa-Xi Chen Hao Li Li-Xing You Zhen Wang Yang Chen Xiang-Bin Wang Qiang Zhang Jian-Wei Pan Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics University of Science and Technology of China Hefei 230026 China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China Jinan Institute of Quantum Technology Jinan Shandong 250101 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China State Key Laboratory of Low Dimensional Quantum Physics Department of Physics Tsinghua University Beijing 100084 China

Twin-field quantum key distribution (TFQKD) promises ultralong secure key distribution which surpasses the rate distance limit and can reduce the number of the trusted nodes in long-haul quantum network. Tremendous efforts have been made toward implementation of TFQKD, among which, the secure key with finite size analysis can distribute more than 500 km in the lab and in the field. Here, we demonstrate the sending-or-not-sending TFQKD experimentally, achieving a secure key distribution with finite size analysis over a 658 km ultra-low-loss optical fiber. Meanwhile, in a TFQKD system, any phase fluctuation due to temperature variation and ambient variation during the channel must be recorded and compensated, and all this phase information can then be utilized to sense the channel vibration perturbations. With our quantum key distribution system, we recovered the external vibrational perturbations generated by artificial vibroseis on both the quantum and frequency calibration link, and successfully located the perturbation position in the frequency calibration fiber with a resolution better than 1 km. Our results not only set a new distance record of quantum key distribution, but also demonstrate that the redundant information of TFQKD can be used for remote sensing of the channel vibration, which can find applications in earthquake detection and landslide monitoring besides secure communication.

关键词： Optical quantum information processing Quantum cryptography Quantum sensing Seismology

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Synthesis of High-Quality Vertical Graphene Nanowalls on Metal Foams and Their Applications in Emi Shielding

SSRN

引用

SSRN 2022年

作者： Wang, Zehui Shen, Honglie Luo, Kewen Mao, Weibiao Xu, Yajun Zhang, Jingzhe Ge, Jiawei Li, Yufang Yang, Yan Wu, Tianru Jiangsu Key Laboratory of Materials and Technology for Energy Conversion College of Materials Science & Technology Nanjing University of Aeronautics & Astronautics Nanjing210016 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Zhenjiang Key Laboratory of Advanced Sensing Materials and Devices Jiangsu University Zhenjiang212013 China

Due to the development of high-frequency electronic devices, electromagnetic pollution has attracted global attention. Electromagnetic interference (EMI) shielding materials with low thickness, improved EMI shielding performance and lightweight are highly required for protecting the devices. Metal foams (MFs) and carbon-related materials have been successfully applied in EMI shielding. Herein, by utilizing the plasma-enhanced chemical vapor deposition (PECVD) method, high-quality vertical graphene nanowalls (VGNs) were prepared on Cu foam (CF) and Ni foam (NF) substrates. The combination of porous VGNs and MFs significantly improved their electrical conductivity, thus their EMI shielding performance was enhanced. The electrical conductivity of the VGNs/CF films could reach 4.81×10 6 S·m -1 , increased by 15.3% compared with the pristine CF films. At a frequency range of 8.2-12.4 GHz, the EMI shielding effectiveness values of VGNs/CF films with a thickness of ~ 120 μm could reach 81.7 dB, increased by 25.9% compared with the pristine CF films. The VGNs/MF composite films with preferable EMI shielding effectiveness provide a new possibility for developing the high-performance EMI shielding materials. © 2022, The Authors. All rights reserved.

关键词： Graphene

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Synthesis of High-Quality Vertical Graphene Nanowalls on Metal Foams and Their Applications in Emi Shielding

SSRN

引用

SSRN 2022年

Due to the development of high-frequency electronic devices, electromagnetic pollution has attracted global attention. Electromagnetic interference (EMI) shielding materials with low thickness, improved EMI shielding performance and lightweight are highly required for protecting the devices. Metal foams (MFs) and carbon-related materials have been successfully applied in EMI shielding. Herein, by utilizing the plasma-enhanced chemical vapor deposition (PECVD) method, high-quality vertical graphene nanowalls (VGNs) were prepared on Cu foam (CF) and Ni foam (NF). The combination of porous VGNs and MFs significantly improved the electrical conductivity, thus their EMI shielding performance was enhanced. The electrical conductivity of the VGNs/CF films could reach 4.81×10 6 S·m -1 , increased by 15.3% compared with the pristine CF films. At a frequency range of 8.2-12.4 GHz, the EMI shielding effectiveness values of VGNs/CF films with a thickness of ~ 120 μm could reach 81.7 dB. The VGNs/MF composite films with preferable EMI shielding effectiveness provide a new possibility for developing the high-performance EMI shielding materials. © 2022, The Authors. All rights reserved.

关键词： Graphene

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Self-templated nitrogen-doped mesoporous carbon decorated with double transition-metal active sites for enhanced oxygen electrode catalysis

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Rare Metals 2020年第7期39卷 824-833页

作者： Meng-Fei Qiao Ying Wang Lei Li Guang-Zhi Hu Guo-An Zou Xamxikamar Mamat Ye-Min Dong Xun Hu Key Laboratory of Chemistry of Plant Resources in Arid Regions Xinjiang Technical Institute of Physics and ChemistryChinese Academy of ScienceUrumqi 830011China College of Biological Chemical Sciences and EngineeringJiaxing UniversityJiaxing 314001China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Material Science and Engineering University of JinanJinan 250022China

The development of high-performance,low-cost bifunctional catalysts with long-term stability for the oxygen reduction reaction(ORR)and oxygen evolution reaction(OER)is one of the most critical challenges for the large-scale application of metal-air ***,we report an advanced nitrogen-doped mesoporous carbon(NMC)composite(NiCo2O4/CoNx-NMC)formed from a mixture of Co-and Ni-hydroxide-infiltrated phenolic resin and melamine *** composite exhibits superior electrocatalytic activity,stability,and selectivity for the ORR and *** activity parameter(DE),which is an indicator of the overall catalytic activity of bifunctional catalysts,was 0.76 V for NiCo2O4/***,catalyst outperforms the majority of previously reported non-precious metal-based bifunctional *** remarkable ultra-high catalytic performance of NiCo2O4/CoNx-NMC for the ORR and OER can be attributed to the presence of different active sites of the CoNx structure and the formation of NiCo2O4 with the spinel structure,which was obtained by a stepwise pyrolysis *** synthesis strategy opens a new avenue for the rational design of highly active bifunctional electrocatalysts.

关键词： Bifunctional catalysis Oxygen reduction reaction Oxygen evolution reaction Pyrolysis strategy Double active sites

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In-situ atomic-level observation of reversible first-order transition in Hf0.5 Zr0.5 O₂ ferroelectric film

In-situ atomic-level observation of reversible first-order t...

引用

International Electron Devices Meeting (IEDM)

作者： Yonghui Zheng Tianjiao Xin Jing Yang Yunzhe Zheng Zhaomeng Gao Yiwei Wang Yilin Xu Yan Cheng Kai Du Diqing Su Ruiwen Shao Bingxing Zhou Zhen Yuan Qilan Zhong Cheng Liu Rong Huang Xiaodong Tang Chungang Duan Sannian Song Zhitang Song Hangbing Lyu Department of Electronics Key Laboratory of Polar Materials and Devices (MOE) East China Normal University Shanghai China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Huawei Technologies Co. Shenzhen China Beijing Advanced Innovation Center for Intelligent Robots and Systems School of Medical Technology Beijing Institute of Technology Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665489607

In this work, we revealed the dynamic process of atomic structure transitions of ferroelectric (FE) Hf 0.5 Zr 0.5 O 2 (HZO) film across Curie temperature ${\mathrm{T}}_{\mathrm{c}}$ in spherical aberration corrected transmission electron microscope (Cs-TEM) with in-situ controlled heating and cooling. We have the following new observations: (1) A first-order transition between polar orthorhombic (o−) and nonpolar tetragonal (t−) phases occurs as heating up to ${\mathrm{T}}_{\mathrm{c}}$, while the reverse process is triggered by cooling with obvious thermal hysteresis $(\Delta \mathrm{T}\approx 298^{o}\mathrm{C})$; (2) Monoclinic (m−) phase contributes to the stability of o-structure by introducing local compressive stress; (3) The cooling t-to-o transition is identified as martensitic-like transformation, therefore increasing the phase change driving force would be helpful to FE enhancement. This work provides solid evidences on structure transitions near ${\mathrm{T}}_{\mathrm{c}}$ of HZO film at atomic-scale, laying foundation for understanding the physical nature of ferroelectricity in hafnium oxide materials.

关键词： Heating systems Temperature distribution Cooling Capacitors Force Hafnium oxide Iron

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High-resolution ARPES endstation for in-situ electronic structure investigations at SSRF

arXiv

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arXiv 2021年

作者： Yang, Yi-Chen Liu, Zheng-Tai Liu, Ji-Shan Liu, Zhong-Hao Liu, Wan-Ling Lu, Xiang-Le Mei, Hong-Ping Li, Ang Ye, Mao Qiao, Shan Shen, Da-Wei State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Sciences Beijing100049 China

Angle-resolved photoemission spectroscopy (ARPES) is one of the most powerful experimental techniques in condensed matter physics. Synchrotron ARPES, which uses photons with high flux and continuously tunable energy, has become particularly important. However, an excellent synchrotron ARPES system must have features such as a small beam spot, super-high energy resolution, and a user-friendly operation interface. A synchrotron beamline and an endstation (BL03U) were designed and constructed at the Shanghai Synchrotron Radiation Facility. The beam spot size at the sample position is 7.5 (V) µm × 67 (H) µm, and the fundamental photon range is 7–165 eV;the ARPES system enables photoemission with an energy resolution of 2.67 meV@21.2 eV. In addition, the ARPES system of this endstation is equipped with a six-axis cryogenic sample manipulator (the lowest temperature is 7 K) and is integrated with an oxide molecular beam epitaxy system and a scanning tunneling microscope, which can provide an advanced platform for in-situ characterization of the fine electronic structure of condensed matter. Copyright © 2021, The Authors. All rights reserved.

关键词： Photons

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The out-of-plane magnetoresistance in a Van der Waals thin film of WTe2

arXiv

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arXiv 2023年

作者： Liu, Y.S. Xiao, H. Zhang, C. Zhang, C.W. Shi, Y.G. Hu, T. Schneider, C.M. Peter Grünberg Institute PGI-6 Forschungszentrum Jülich JülichD-52425 Germany Fakultät für Physik Universität Duisburg-Essen DuisburgD-47057 Germany Beijing Academy of Quantum Information Sciences Beijing100193 China Center for High Pressure Science and Technology Advanced Research Beijing100094 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Institute of Physics Chinese Academy of Sciences Beijing100190 China

We report the magneto-transport measurements of thin film devices of the topological Weyl semimetal WTe2 with the applied current along and vertical to the in-plane directions. The device is composed of a Van der Waals thin film of WTe2 sandwiched between top and bottom Au electrodes. At low temperatures, we found a large unsaturated in-plane magnetoresistance and a saturated out-of-plane magnetoresistance when the external magnetic fields are applied perpendicular to the plane. By analysis of Shubnikov-de Haas oscillations, one oscillation peak is found in the out-of-plane magnetoresistance, in contrast to four oscillation peaks in the in-plane magnetoresistance. Our work provides new insight into the origin of the unsaturated magnetoresistance in WTe2 and may inspire non-planar engineering to reach higher integration in spintronics. Copyright © 2023, The Authors. All rights reserved.

关键词： Magnetoresistance

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Angle-resolved photoemission study of V-based kagome metal CsV8Sb12

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Physical Review B 2023年第23期108卷 235129-235129页

作者： Huan Ma Guohua Liu Liu Yang Qiangwei Yin Pengfei Ding Zhonghao Liu Hong-Yan Lu Hechang Lei Shancai Wang Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices Renmin University of China Beijing 100872 China Department of Physics Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Renmin University of China Beijing 100872 China School of Physics and Physical Engineering Qufu Normal University Qufu 273165 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China College of Materials Science and Optoelectronic Technology University of Chinese Academy of Sciences Beijing 100049 China

Recently, V-based kagome AV3Sb5 (A=K,Rb,Cs) attracted researcher interest for the existence of charge-density wave (CDW), superconductivity, and nontrivial Z2 topological invariant. CsV8Sb12 has the same V-based kagome net, considered as the substitution of Cs with orthorhombic V2Sb2 layer. Using angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT), we find out that the symmetry of the Fermi surface (FS) and the electron structure near EF change from C6 to C2 symmetry. With the appearance of the electronic states from V2Sb2 layer near EF, the corresponding bands from V-based kagome move to high binding energy by the introduction of V2Sb2 layer. We observe two types of saddle points. One at M¯ originates from the kagome lattice and locates at high binding energy. Another one at Γ¯ arises from V2Sb2 layer and is situated near EF. We study the influence of kagome distortion on the band structure using DFT, tight-binding model based on the ARPES experiment. We find that the V2Sb2-induced symmetry breaking and lattice distortion of the kagome net can lead to the shift of Dirac cones away from the high symmetry point. After considering spin-orbit coupling (SOC), the distorted kagome lattice shows the same topological properties as the pristine kagome lattice. Our findings will enhance comprehension of the microscopic mechanisms in V-based kagome metals and their topological properties.

关键词： Electronic structure Fermi surface Flat bands van Hove singularity Angle-resolved photoemission spectroscopy Density functional calculations Tight-binding model

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Photon-in/photon-out endstation for studies of energy materials at beamline 02B02 of Shanghai Synchrotron Radiation Facility

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Chinese Physics B 2020年第1期29卷 62-69页

作者： Guoxi Ren Nian Zhang Xuefei Feng Hui Zhang Pengfei Yu Shun Zheng Deng Zhou Zongwang Tian Xiaosong Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Chinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049China School of Physical Science and Technology Shanghai Tech UniversityShanghai 201210China Advanced Light Source Lawrence Berkeley National LaboratoryBerkeleyCalifornia 94720USA

A new photon-in/photon-out endstation at beamline 02B02 of the Shanghai Synchrotron Radiation Facility for studying the electronic structure of energy materials has been constructed and fully opened to *** endstation has the capability to perform soft x-ray absorption spectroscopy in total electron yield and total fluorescence yield modes *** photon energy ranges from 40 eV to 2000 eV covering the K-edge of most low Z-elements and the L-edge of 3d *** new self-designed channeltron detector allows us to achieve good fluorescence signals at the low photon *** addition,we synchronously collect the signals of a standard reference sample and a gold mesh on the upstream to calibrate the photon energy and monitor the beam fluctuation,*** order to cross the pressure gap,in situ gas and liquid cells for soft x-ray absorption spectroscopy are developed to study the samples under realistic working conditions.

关键词： soft x-ray absorption energy materials photon-in/photon-out in situ cell

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Strain enhancement for a MoS2-on-GaN photodetector with an Al2O3 stress liner grown by atomic layer deposition

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Photonics Research 2020年第6期8卷 799-805页

作者： ZHIWEN LI JIANGLIU LUO SHENGQUN HU QIANG LIU WENJIE Yu YOUMING LU XINKE LIU College of Materials Science and Engineering Shenzhen UniversityShenzhen 518060China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

Strain regulation as an effective way to enhance the photoelectric properties of two dimensional(2D)transition metal dichalcogenides has been widely employed to improve the performance of photovoltaic *** this work,tensile strain was introduced in multilayer MoS2 grown on GaN by depositing 3 nm of Al2O3 on the *** temperature dependent Raman spectrum shows that the thermal stability of MoS2 is improved by *** simulations confirmed the existence of tensile strain on MoS2 covered with Al2O3,and the bandgap and electron effective mass of six layers of MoS2 decreased due to tensile strain,which resulted in an increase of electron *** to the tensile strain ffect,the photodetector with the Al2O3 stress liner achieved better performance under the illumination of 365 nm wavelength,including a higher responsivity of 24.6 A/W,photoconductive gain of 520,and external quantum fficiency of 8381%,which are more than twice the corresponding values of photodetectors without *** work provides an effective technical way for improving the performance of 2D material photodetectors.

关键词： stress illumination layer

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