检索结果-内蒙古大学图书馆

SSRN 2022年

作者： Tao, Wei Xu, Peihuan Hu, Jing Cheng, Miao Li, Wanfei Liu, Qianqian Wang, Ruirui Ling, Yun Zheng, Yonghui Chen, Yan Liu, Bo Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices School of Materials Science and Engineering Suzhou University of Science and Technology Jiangsu Province Suzhou215009 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China East China Normal University Shanghai200241 China

Thermal stability and operation speed are two key challenges in phase change memory (PCM). This work reports GeTe/Cr0.29Sb2Te (GT/CrST) superlattice-like (SLL) films for both high operation speed and superior thermal stability. The thermal properties, phase change behaviors, microstructural evolution and the electrical performances are investigated in detail. Results show that [GT(8 nm)/CrST(2 nm)]7 film possesses excellent ten-year data-retention (T10-year=156 ºC), small density change rate (2.6 %), ultrafast reversible phase change (0.5 ns), and low resistance drift coefficient (~0.07). Furthermore, the [GT(8 nm)/CrST(2 nm)]7 based PCM cell has the reversible operation time of as low as 8 ns and low power consumption of 8.1 10-12 J. The two-dimensional finite element analysis confirms that the lower power consumption is ascribed to the existence of interfacial thermal resistance in SLL thin film, leading to the lower thermal conductivity. Results indicate that [GT(8 nm)/CrST(2 nm)]7 thin film has great potential for PCM application with excellent thermal stability and phase change speed. © 2022, The Authors. All rights reserved.

关键词： Thermodynamic stability

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A chip-scale polarization-spatial-momentum quantum SWAP gate in silicon nanophotonics

arXiv

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arXiv 2023年

作者： Cheng, Xiang Chang, Kai-Chi Xie, Zhenda Sarihan, Murat Can Lee, Yoo Seung Li, Yongnan Xu, XinAn Vinod, Abhinav Kumar Kocaman, Serdar Yu, Mingbin Lo, Patrick Guo-Qiang Kwong, Dim-Lee Shapiro, Jeffrey H. Wong, Franco N.C. Wong, Chee Wei Fang Lu Mesoscopic Optics and Quantum Electronics Laboratory University of California Los AngelesCA90095 United States Optical Nanostructures Laboratory Columbia University New YorkNY10027 United States National Laboratory of Solid State Microstructures School of Electronic Science and Engineering Nanjing University Nanjing210093 China Department of Electrical Engineering Middle East Technical University Ankara06800 Turkey Institute of Microelectronics Singapore117685 Singapore State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Shanghai Industrial Technology Research Institute Shanghai200050 China Advanced Micro Foundry Singapore117685 Singapore Research Laboratory of Electronics Massachusetts Institute of Technology CambridgeMA02139 United States

Recent progress in quantum computing and networking enables high-performance large-scale quantum processors by connecting different quantum modules. Optical quantum systems show advantages in both computing and communications, and integrated quantum photonics further increases the level of scaling and complexity. Here we demonstrate an efficient SWAP gate that deterministically swaps a photon’s polarization qubit with its spatial-momentum qubit on a nanofabricated two-level silicon-photonics chip containing three cascaded gates. The on-chip SWAP gate is comprehensively characterized by tomographic measurements with high fidelity for both single-qubit and two-qubit operation. The coherence preservation of the SWAP gate process is verified by single-photon and two-photon quantum interference. The coherent reversible conversion of our SWAP gate facilitates a quantum interconnect between different photonic subsystems with different degrees of freedom, demonstrated by distributing four Bell states between two chips. We also elucidate the source of decoherence in the SWAP operation in pursuit of near-unity fidelity. Our deterministic SWAP gate in the silicon platform provides a pathway towards integrated quantum information processing for interconnected modular systems. © 2023, CC BY.

关键词： Silicon photonics

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Topological frequency shift of quantum oscillation in CaFeAsF

arXiv

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arXiv 2021年

作者： Terashima, Taichi Uji, Shinya Wang, Teng Mu, Gang International Center for Materials Nanoarchitectonics National Institute for Materials Science Tsukuba305-0003 Japan State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Shanghai200050 China

Guo, Alexandradinata, et al. have recently proposed that quantum-oscillation frequencies from Dirac/Weyl fermions exhibit a negative shift proportional to T2 because of the energy dependence of the effective mass peculiar to a linear band-dispersion. We have measured Shubnikov-de Haas oscillation in CaFeAsF up to T = 9 K. The frequency of the α Dirac electron exhibits a negative shift with increasing T, while that of the β Schrödinger hole does not. For T ⩾ 5 K where β is negligible, the α-frequency shift is proportional to T2 and its rate agrees with the theoretical prediction within experimental accuracy. At lower temperatures, the shifts of α and β deviate from theoretical expectations, which we ascribe to the inaccuracy in the frequency determination due to unfavorable interference between frequencies. Our results confirm that the topological frequency shift can be utilized to identify Dirac/Weyl fermions when quantum-oscillation frequencies can be determined accurately. Copyright © 2021, The Authors. All rights reserved.

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Competing spin-glass and spin-fluctuation states in NdxPr4−xNi3O8

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Physical Review B 2023年第1期108卷 014410-014410页

作者： Shangxiong Huangfu Zurab Guguchia Tian Shang Hai Lin Huanlong Liu Xiaofu Zhang Hubertus Luetkens Andreas Schilling Laboratory for High Performance Ceramics Empa Überlandstrasse 129 CH-8600 Dübendorf Switzerland Department of Physics University of Zurich Winterthurerstrasse 190 CH-8057 Zurich Switzerland Laboratory for Muon Spin Spectroscopy (LMU) Paul Scherrer Institute (PSI) Forschungsstrasse 111 CH-5232 Villigen Switzerland Key Laboratory of Polar Materials and Devices (MOE) School of Physics and Electronic Science East China Normal University Shanghai 200241 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences (CAS) Shanghai 200050 China CAS Center for Excellence in Superconducting Electronics Shanghai 200050 China

Neodymium nickelates have attracted research interest due to their strongly correlated behavior and remarkable magnetic properties. More importantly, superconductivity has recently been confirmed in thin-film samples of Sr-doped NdNiO2, bringing the layered rare earth nickel oxides into the research spotlight. In this report, we present results on a series of NdNiO2 analogs, NdxPr4−xNi3O8 (x=0.1, 0.25, 1, 2, and 4) obtained by topotactic reduction, in which we observe systematic changes in the magnetic behavior. As the Nd3+ content increases, the initially large spin-freezing region with magnetic frustration becomes smaller and gradually shifts to low temperatures, while the magnetic response gradually increases. The muon-spin spectroscopy measurements on Nd4Ni3O8 show that this phenomenon is likely due to the enhancement of spin fluctuations in NdxPr4−xNi3O8, which weakens the spin frustration behavior for high Nd3+ contents and at low temperatures. These spin fluctuations can be caused by both Nd and Ni ions and could be one of the factors determining the occurrence of possible superconductivity.

关键词： Magnetism Spin fluctuations Superconductivity

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Two pairs of topological Shockley surface bands in the ternary compound SnSb2Te4

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Physical Review B 2022年第4期106卷 045119-045119页

作者： H. J. Qian J. M. Wang D. Y. Wang Q. Jiang H. M. Zha W. J. Liu X. P. Shen M. Ye S. Qiao Center for Excellence in Superconducting Electronics State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Science Shanghai 200050 People's Republic of China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 People's Republic of China State Key Laboratory of Surface Physics Department of Physics Fudan University Shanghai 200433 People's Republic of China School of Physical Science and Technology ShanghaiTech University Shanghai 201210 People's Republic of China

The electronic states in ternary compound SnSb2Te4 wwere studied by first-principles and tight-binding calculations, and two pairs of topological Shockley surface bands below its Fermi energy were revealed theoretically. One shows the Rashba-type structure and the other shows a more complicated ω-shaped bending structure. Combined with spin- and angle-resolved photoemission spectroscopy measurements, the existence of the predicted topological surface states was confirmed. Our theoretical and experimental investigations reveal the complex topological structures in ternary topological insulators, providing a new platform for studying novel topological properties in materials.

关键词： Electronic structure First-principles calculations Spin-orbit coupling Surface states Topological materials Angle-resolved photoemission spectroscopy Spin-resolved photoemission spectroscopy

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Existence of an ultraflat band in the charge density wave state of 4Hb−TaS1.3Se0.7

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Physical Review B 2023年第11期108卷 115115-115115页

作者： Qingxin Liu Peihan Sun Fanyu Meng Yanyan Geng Zhonghao Liu Jianfeng Zhang Jingjing Gao Zhicheng Jiang Shangjie Tian Xuan Luo Yuping Sun Zhihai Cheng Kai Liu Hechang Lei Shancai Wang Department of Physics Key Laboratory of Quantum State Construction and Manipulation Ministry of Education Renmin University of China Bejing 100872 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Science Shanghai 200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China Institute of Physics Chinese Academy of Sciences Beijing 100190 China Key Laboratory of Materials Physics Institute of Solid State Physics HFIPS Chinese Academy of Sciences Hefei 230031 China High Magnetic Laboratory HFIPS Chinese Academy of Sciences Hefei 230031 China Collaborative Innovation Centre of Advanced Microstructures Nanjing University Nanjing 210093 China

A flat band is an electronic state with quenched kinetic energy and an extremely high density of states. In such a state, a small electron-electron correlation can drive multiple intriguing quantum phenomena. By using angle-resolved photoemission spectroscopy, we report the existence of a dispersionless flat band with a sharp quasiparticle peak below EF in the charge density wave state of 4Hb−TaS1.3Se0.7. This band extends over the 13×13 reconstructed Brillouin zone. In combination with the density functional theory calculation, we identify that the flat band is due to the formation of the Star of David at the top-most T layer. In addition, the scanning tunneling spectroscopy observes a sharp peak above EF. We attribute it to the electron-correlation-driven splitting, forming a small gap of ∼45 meV. Our observation of the flat band and splitting in 4Hb−TaS1.3Se0.7 provides a platform to manipulate the electron-correlation-related quantum phenomena at a low energy scale.

关键词： Charge density waves First-principles calculations Electronic structure Photoemission spectroscopy

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Type-II Dirac Nodal Lines in double-kagome-layered CsV8Sb12

arXiv

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arXiv 2022年

作者： Cai, Yongqing Wang, Jianfeng Wang, Yuan Hao, Zhanyang Liu, Yixuan Jiang, Zhicheng Sui, Xuelei Ma, Xiao-Ming Zhang, Chengcheng Shen, Zecheng Yang, Yichen Liu, Wanling Jiang, Qi Liu, Zhengtai Ye, Mao Shen, Dawei Liu, Yi Cui, Shengtao Wang, Le Liu, Cai Lin, Junhao Huang, Bing Mei, Jia-Wei Chen, Chaoyu Shenzhen518055 China School of Physics Beihang University Beijing100191 China Beijing Computational Science Research Center Beijing100193 China State Key Laboratory of Functional Materials for Informatics Center for Excellence in Superconducting Electronics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China National Synchrotron Radiation Laboratory University of Science and Technology of China Anhui Hefei230029 China

Lorentz-violating type-II Dirac nodal line semimetals (DNLSs), hosting curves of band degeneracy formed by two dispersion branches with the same sign of slope, represent a novel state of matter. While being studied extensively in theory, convincing experimental evidences of type-II DNLSs remain elusive. Recently, Vanadium-based kagome materials have emerged as a fertile ground to study the interplay between lattice symmetry and band topology. In this work, we study the low-energy band structure of double-kagome-layered CsV8Sb12 and identify it as a scarce type-II DNLS protected by mirror symmetry. We have observed multiple DNLs consisting of type-II Dirac cones close to or almost at the Fermi level via angle-resolved photoemission spectroscopy (ARPES). First-principles analyses show that spin-orbit coupling only opens a small gap, resulting in effectively gapless ARPES spectra, yet generating large spin Berry curvature. These type-II DNLs, together with the interaction between a low-energy van Hove singularity and quasi-1D band as we observed in the same material, suggest CsV8Sb12 as an ideal platform for exploring novel transport properties such as chiral anomaly, Klein tunneling and fractional quantum Hall effect. © 2022, CC BY.

关键词： Quantum chemistry

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A Single-Photon-Sensitivity Spectrometer Based on Metasurfaces

A Single-Photon-Sensitivity Spectrometer Based on Metasurfac...

引用

Conference on Lasers and Electro-Optics (CLEO)

作者： Jingyuan Zheng You Xiao Mingzhong Hu Hao Li Lixing You Wei Zhang Yidong Huang Department of Electronic Engineering Beijing National Research Center for Information Science and Technology (BNRist) Beijing Innovation Center for Future Chips Tsinghua University Beijing China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Frontier Science Center for Quantum Information Beijing China Beijing Academy of Quantum Information Sciences Beijing China

We demonstrate a single-photon-sensitivity spectrometer based on metasurfaces and superconducting nanowire single-photon detectors with 1.5% ~ 9.5% total detection efficiency at 1100 nm ~ 1700 nm.

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

We demonstrate a single-photon-sensitivity spectrometer based on metasurfaces and superconducting nanowire single-photon detectors with 1.5% ~ 9.5% total detection efficiency at 1100 nm ~ 1700 nm.

关键词： Detectors Lasers and electrooptics Metasurfaces Electrooptical waveguides

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Pcram Electronic Synapse Measurements Based on Pulse Programming Engineering

SSRN

引用

SSRN 2022年

作者： Wang, Qiang Niu, Gang Luo, Ren Fang, Wencheng Wang, Ruobing Xu, Yongkang Song, Zhitang Ren, Wei Song, Sannian Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research School of Electronic Science and Engineering The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong University Xi'An710049 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai200050 China

Pulse programming engineered phase change random access memories (PCRAM) as electronic synapses are attractive for high-performance neuromorphic computing. Pulse programming plays a key role to affect the synaptic plasticity of PCRAM electronic synapse. However, its principle and implementations are rarely reported. This work interprets the implementation rules of PCRAM electronic synapse using pulse programming, including the construction and optimization of testing instrument, the clarification of pulse programming principles for different types of PCRAM electronic synapse as well as the demonstration of statistical results of synaptic simulation. The current study highlights the relationship between resistance voltage characteristic of PCRAM and the design of pulse programming, which is of significance for the achievement of reliable PCRAM electronic synapses. © 2022, The Authors. All rights reserved.

关键词： Well testing

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