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Magnetron co-sputtering synthesis and nanoindentation studies of nanocrystalline(TiZrHf)_(x)(NbTa)_(1–x)high-entropy alloy thin films

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Nano Research 2022年第6期15卷 4873-4879页

作者： Changjun Cheng Xiaofu Zhang Michel J.R.Haché Yu Zou Department of Materials Science and Engineering University of TorontoTorontoOntario M5S 3E4Canada State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology and Center for Excellence in Superconducting ElectronicsChinese Academy of Sciences(CAS)Shanghai 200050China

Refractory high-entropy alloys(HEAs)possess many useful properties such as high strength and high-temperature *** far,most studies on refractory HEAs have been limited to a few well-known compositions and on their coarse-grain bulk *** we fabricate nanocrystalline(TiZrHf)_(x)(NbTa)_(1−x)HEA thin films with a large range of compositions(x=0.07–0.90)by the direct current(DC)magnetron co-sputtering technique and measure their mechanical properties using the nanoindentation *** the as-deposited HEA thin films show a solid-solution body-centered cubic(bcc)*** the compositional ratio(x)increases,the elastic modulus decreases from 153 to 123 GPa,following the trend of the rule of *** x increases,the hardness first decreases from 6.5 GPa(x=0.07)to the lowest value(4.6 GPa,x=0.48)and then increases to the highest value(7.1 GPa,x=0.90),showing a concave *** change in hardness might be attributed to the combinational influence caused by the atomic size and modulus effects,as well as the texture *** authors also propose a few open questions for future studies on this and related HEA systems.

关键词： high-entropy alloys nanocrystalline alloys refractory metals thin films magnetron co-sputtering nanoindentation

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Ultra-Large FSR Filter Based on Bragg Grating-Subwavelength Grating Slot Microring Resonator 3

Ultra-Large FSR Filter Based on Bragg Grating-Subwavelength ...

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3rd International Conference on Laser, Optics, and Optoelectronic technology, LOPET 2023

作者： Li, Hanyue Wang, Ruxue Wu, Aimin State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510667624

Microring resonators (MRRs) are widely used in optical filters due to their compact size, high Q, and narrow linewidth. However, traditional MRR-based high sensitivity sensors suffer from narrow free spectral range (FSR), which limits the number of channels for detecting substances and causes interference with the identification of the center wavelength when the refractive index of analytes changes significantly. In this paper, we propose an ultra-large FSR and high sensitivity filter utilizing subwavelength grating slot microring resonator with inner silicon blocks with different widths, achieving FSR of 95.5 nm and refractive index sensitivity of 743 nm/RIU. And a lab-on-chip system comprised of eight channels-based filters is presented, promoting the development of silicon photonics in the detecting resolution of small refractive index changes of analytes to 3.60×10-4 RIU and multiple analytes simultaneously. © 2023 SPIE.

关键词： Silicon photonics

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Photon number resolvability of multi-pixel superconducting nanowire single photon detectors using a single flux quantum circuit

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Chinese Physics B 2022年第5期31卷 636-640页

作者： Hou-Rong Zhou Kun-Jie Cheng Jie Ren Li-Xing You Li-Liang Ying Xiao-Yan Yang Hao Li Zhen Wang State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China CAS Center for Excellence in Superconducting Electronics Shanghai 200050China

Superconducting nanowire single-photon detectors(SNSPDs) are typical switching devices capable of detecting single photons with almost 100% detection efficiency. However, they cannot determine the exact number of incident photons during a detection event. Multi-pixel SNSPDs employing multiple read-out channels can provide photon number resolvability(PNR), but they require increased cooling power and costly multi-channel electronic systems. In this work, a single-flux quantum(SFQ) circuit is employed, and PNR based on multi-pixel SNSPDs is successfully demonstrated. A multi-input magnetically coupled DC/SFQ converter(MMD2 Q) circuit with a mutual inductance M is used to combine and record signals from a multi-pixel SNSPD device. The designed circuit is capable of discriminating the amplitude of the combined signals in accuracy of Φ_(0)/M with Φ_(0) being a single magnetic flux quantum. By employing the MMD2 Q circuit,the discrimination of up to 40 photons can be simulated. A 4-parallel-input MMD2 Q circuit is fabricated, and a PNR of3 is successfully demonstrated for an SNSPD array with one channel reserved for the functional verification. The results confirm that an MMD2 Q circuit is an effective tool for implementing PNR with multi-pixel SNSPDs.

关键词： superconducting nanowire single-flux quantum circuit photon number resolution

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Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast

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National Science Review 2022年第5期9卷 89-98页

作者： Qiang Li Jun-Feng Wang Fei-Fei Yan Ji-Yang Zhou Han-Feng Wang He Liu Li-Ping Guo Xiong Zhou Adam Gali Zheng-Hao Liu Zu-Qing Wang Kai Sun Guo-Ping Guo Jian-Shun Tang Hao Li Li-Xing You Jin-Shi Xu Chuan-Feng Li Guang-Can Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education and School of Physics and Technology Wuhan University Department of Atomic Physics Budapest University of Technology and Economics Wigner Research Centre for Physics State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences(CAS)

Spin defects in silicon carbide(SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable *** room-temperature single-spin manipulation of colour centres in SiC has been demonstrated,the typically detected contrast is less than 2%,and the photon count rate is also ***,we present the coherent manipulation of single divacancy spins in 4 H-SiC with a high readout contrast(-30%) and a high photon count rate(150 kilo counts per second)under ambient conditions,which are competitive with the nitrogen-vacancy centres in *** between a single defect spin and a nearby nuclear spin is also *** further provide a theoretical explanation for the high readout contrast by analysing the defect levels and decay *** the high readout contrast is of utmost importance in many applications of quantum technologies,this work might open a new territory for SiC-based quantum devices with many advanced properties of the host material.

关键词： silicon carbide single divacancy defects spin coherent control high readout contrast bright photon emission

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Investigation of improving the uniformity of Cu dishing depth in Cu-SiO2 chemical mechanical polishing

Investigation of improving the uniformity of Cu dishing dept...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Yuiia Liu Kelaiti Xiao Kai Zhang Jin Zhang Daoxiang Liu School of Microelectronics Shanghai University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Shanghai China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

As chip manufacturing trends towards miniaturization and integration, the focus of the semiconductor industry has shifted from traditional 2D packaging to more complex 3D packaging, with hybrid bonding technology emerging as a critical method for heterogeneous integration. Currently, Cu-Cu/SiO 2 -SiO 2 bonding is the mainstream hybrid bonding technique. To achieve effective bonding, wafers require surface planarization of Cu-SiO 2 through chemical mechanical polishing (CMP). The CMP process for Cu-SiO 2 surfaces typically consists of two steps: copper CMP and barrier layer CMP. However, due to the uneven thickness of electroplated copper, over-polishing is inevitable during the copper CMP in order to effectively remove the copper layer. This will lead to excessive dishing or recession of Cu pads with orginal thinner Cu layer electroplated and then finally affect the bonding quality. To address this challenge, in this paper, a three-step CMP method is developed, which introduces an additional SiO 2 CMP step after the barrier layer CMP to achieve the appropriate dishing depth of the pads. In this study, the influence of pad size on the Cu pad dishing depth was investigated. The results indicated that as the polishing time increased, the Cu pad dishing became deeper and larger pad sizes resulted in a faster growth rate of the dishing depth. The polishing slurry plays an important role in the CMP process. It is necessary to find a polishing slurry with appropriate material remove rate during additional SiO 2 CMP to reduce the Cu dishing. Through experiments, a SiO 2 polishing slurry was selected with Cu: SiO 2 remove rate of 1:3. Then the process parameters for the SiO 2 CMP were optimized to achieve an ideal dishing depth for the pads. Finally, the dishing depth of pads with a side length of 15um was optimized from 100~200nm to 20~40nm. The experimental results indicate that this method can correct the Cu dishing caused by over-polishing even

关键词： Silicon compounds Three-dimensional displays Planarization Multichip modules Market research Manufacturing Copper

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Implementation of an 8-bit bit-slice AES S-box with rapid single flux quantum circuits

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Chinese Physics B 2022年第9期31卷 604-610页

作者： Ruo-Ting Yang Xin-Yi Xue Shu-Cheng Yang Xiao-Ping Gao Jie Ren Wei Yan Zhen Wang State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Shanghai 200050China University of Chinese Academy of Sciences Beijing 100049China School of Software and Microelectronics Peking UniversityBeijing 100871China

Rapid single flux quantum(RSFQ)circuits are a kind of superconducting digital circuits,having properties of a natural gate-level pipelining synchronous sequential circuit,which demonstrates high energy efficiency and high throughput *** find that the high-throughput and high-speed performance of RSFQ circuits can take the advantage of a hardware implementation of the encryption algorithm,whereas these are rarely applied to this *** the available encryption algorithms,the advanced encryption standard(AES)algorithm is an advanced encryption standard *** is currently the most widely used symmetric cryptography *** this work,we aim to demonstrate the SubByte operation of an AES-128 algorithm using RSFQ circuits based on the SIMIT Nb0_(3) *** design an AES S-box circuit in the RSFQ logic,and compare its operational frequency,power dissipation,and throughput with those of the CMOS-based circuit post-simulated in the same *** complete RSFQ S-box circuit costs a total of 42237 Josephson junctions with nearly 130 Gbps throughput under the maximum simulated frequency of 16.28 *** analysis shows that the frequency and throughput of the RSFQ-based S-box are about four times higher than those of the CMOS-based ***,we design and fabricate a few typical modules of the *** measurements demonstrate the correct functioning of the modules in both low and high frequencies up to 28.8 GHz.

关键词： RSFQ AES S-box hardware implementation

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Doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)

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Chinese Physics B 2023年第9期32卷 422-426页

作者：张鑫江志诚袁健侯骁飞王霞余娜邹志强刘正太夏威于振海沈大伟郭艳峰 School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Analytical Instrumentation Center School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China ShanghaiTech Laboratory for Topological Physics ShanghaiTech UniversityShanghai 201210China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The van der Waals(vdW)MnSb4Te7is a newly synthesized antiferromagnetic(AFM)topological insulator hosting a robust axion insulator state irrelative to the specific spin ***,the intrinsic hole doped character of MnSb_4Te_7makes the Fermi level far away from the Dirac point of about 180 meV,which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect(QAHE).To shift up the Fermi level close to the Dirac point,the strategy of partially replacing Sb with Bi as Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)was tried and the magnetotransport properties,in particular,the anomalous Hall effect,were measured and *** the electron doping,the anomalous Hall conductanceσAH changes from negative to positive between x=0.3 and 0.5,indicative of a possible topological ***,a charge neutrality point(CNP)also appears between x=0.6 and *** results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism,as well as for the exploration of exotic topological properties.

关键词： anomalous Hall effect doping topological materials

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Design of MZI electro-optic modulator on lithium niobate heterogeneous integration platforms

Design of MZI electro-optic modulator on lithium niobate het...

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2023 Applied Optics and Photonics China: AI in Optics and Photonics, AOPC 2023

作者： Li, Zhuoyun Chen, Yang Wang, Qing Yu, Mingbin Wang, Shuxiao Cai, Yan State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Changning Road 865 Shanghai200050 China University of the Chinese Academy of Sciences Yuquan Road 19 Beijing100049 China

ISBN: (纸本)9781510672383

Applying various functional materials to silicon to enhance the functionality of silicon photonics is a potential solution for silicon photonics platform under the requirement of CMOS compatibility. In this paper, two LN heterogeneous integration platforms have been proposed. One is the integration of LN film with a 220 nm top silicon SOI platform, in which the simulated results demonstrate that the designed modulator has a low half wave-voltage length product of 2.27 V·cm. And the other is the integration of LN film with a 400 nm top silicon nitride on insulator platform, in which the the proposed device achieves a VpiL of 2.58 V·cm and a 3-dB bandwidth of ∼130 GHz with 7-mm long modulation region is verified by simulation. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

关键词： Silicon photonics

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Inverse design of a low-loss, compact equal-input 3 × 1 MMI power coupler 2

Inverse design of a low-loss, compact equal-input 3 × 1 MMI...

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2nd International Conference on Electronic Information Engineering, Big Data, and Computer technology, EIBDCT 2023

作者： Liu, Hongbao Zhao, Yingxuan Huang, Rui She, Xiaojuan Li, Yang Liao, Han Zhu, Junbo Zhu, Zijian Liu, Xiang Sheng, Zhen Gan, Fuwan State Key Laboratory of Function Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China University of Chinese Academy of Science Beijing100049 China Materials Science and Opto-Electronics Technology Research Center Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9781510664968

As a widely studied fundamental block in photonic integrated circuits, multimode interferometer (MMI) is excellent in coupling of multiple light sources with equal intensity. However, unacceptable excess loss occurs if phase-matching is not satisfied at any input port. In this paper, we proceed direct binary search (DBS) algorithm to optimize an inverse designed 3 × 1 MMI coupler with nano-pixel structure and realize high-efficiency coupling of equal input (intensity and phase) sources of 1550 nm fundamental TE mode, with a compact footprint of 2.5 × 2.5 μm2 and low excess loss of 0.04dB. We also investigated the possibility of inverse design method to handle the coupling of multiple input sources with arbitrary phase difference among different ports. © 2023 SPIE.

关键词： Silicon photonics

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Universal memory based on phase-change materials:From phase-change random access memory to optoelectronic hybrid storage

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Chinese Physics B 2021年第5期30卷 128-149页

作者： Bo Liu Tao Wei Jing Hu Wanfei Li Yun Ling Qianqian Liu Miao Cheng Zhitang Song Research Center for Nanophotonic and Nanoelectronic Materials School of Materials Science and EngineeringSuzhou University of Science and TechnologySuzhou 215009China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods,which constitute an insurmountable challenge for existing data *** present,computing devices use the von Neumann architecture with separate computing and memory units,which exposes the shortcomings of“memory bottleneck”.Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this ***-change random access memory(PCRAM)is called one of the best solutions for next generation non-volatile *** to its high speed,good data retention,high density,low power consumption,PCRAM has the broad commercial prospects in the in-memory computing *** this review,the research progress of phase-change materials and device structures for PCRAM,as well as the most critical performances for a universal memory,such as speed,capacity,and power consumption,are *** comparing the advantages and disadvantages of phase-change optical disk and PCRAM,a new concept of optoelectronic hybrid storage based on phase-change material is ***,its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

关键词： universal memory optoelectronic hybrid storage phase-change material phase-change random access memory

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