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2024 Conference on Lasers and Electro-Optics, CLEO 2024

作者： Fan, Yihao Siyu, E. Guo, Yuyao Li, Xinhang Lu, Liangjun Wang, Shuxiao Cai, Yan Chen, Jianping Zhou, Linjie State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Key Lab of Navigation and Location Services Department of Electronic Engineering Shanghai Jiao Tong University Shanghai200240 China SJTU-Pinghu Institute of Intelligent Optoelectronics Pinghu314200 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Shanghai Industrial μTechnology Research Institute Shanghai201800 China

We realize a hybrid integrated self-injection locking laser (SIL) with an ultra-narrow intrinsic linewidth of 5 Hz. With heterodyne synthesis using a pair of SILs, a microwave signal with a 4-kHz linewidth is achieved... 详细信息

ISBN: (纸本)9781957171395

关键词： Linewidth

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Observation of Mott instability at the valence transition of f-electron system

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National Science Review 2023年第6期10卷 183-190页

作者： Haifeng Yang Jingjing Gao Yingying Cao Yuanji Xu Aiji Liang Xiang Xu Yujie Chen Shuai Liu Kui Huang Lixuan Xu Chengwei Wang Shengtao Cui Meixiao Wang Lexian Yang Xuan Luo Yuping Sun Yi-feng Yang Zhongkai Liu Yulin Chen School of Physical Science and Technology Shanghai Tech University Key Laboratory of Materials Physics Institute of Solid State Physics Chinese Academy of Sciences Science Island Branch of Graduate School University of Science and Technology of China Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Shanghai Tech Laboratory for Topological Physics State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences High Magnetic Field Laboratory Chinese Academy of Sciences Collaborative Innovation Center of Microstructures Nanjing University Songshan Lake Materials Laboratory Department of Physics University of Oxford

Mott physics plays a critical role in materials with strong ele ctronic *** insulator-to-metal transition can be driven by chemical doping,external pressure,temperature and gate voltage,which is often seen in transition metal oxides with 3d electrons near the Fermi energy（*** superconductor）.In4f-electron systems,however,the insulator-to-metal transition is mostly driven by Kondo hybridization and the Mott physics has rarely been explored in ***,by combining the angle-resolved photo emission spectroscopy and strongly correlated band structure calculations,we show that an unusual Mott instability exists in YbInCu4accompanying its mysterious first-order valence *** contrasts with the prevalent Kondo picture and demonstrates that YbInCu4is a unique platform to explore the Mott physics in Kondo lattice *** work provides important insight for the understanding and manipulation of correlated quantum phenomena in the f-electron system.

关键词： valence transition orbital-selectiveMott transition Kondo coupling heavy fermions strong correlations ARPES DMFT

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Recent Developments in APXPS at the Shanghai Synchrotron Radiation Facility

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Synchrotron Radiation News 2022年第3期35卷 26-30页

作者： Zhang, Hui Li, Xiaobao Yu, Yi Liu, Zhi State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China Center for Transformative Science ShanghaiTech University Shanghai China School of Physical Science and Technology ShanghaiTech University Shanghai China

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Low-noise Microwave Signal Generation by Heterodyning Two Narrow-linewidth Self-injection Locked Lasers

Low-noise Microwave Signal Generation by Heterodyning Two Na...

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CLEO: Science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

关键词： Linewidth

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Anisotropy of Electronic Spin Texture in the High-Temperature Cuprate Superconductor Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)

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Chinese Physics Letters 2023年第3期40卷 45-48页

作者：刘文晶查鹤鸣顾根大沈晓萍叶茂乔山 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Condensed Matter Physics and Materials Science Department Brookhaven National LaboratoryUptonNew York11973USA State Key Laboratory of Surface Physics Department of PhysicsFudan UniversityShanghai 200433China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

Seeking new order parameters and the related broken symmetry and studying their relationship with phase transition have been important topics in condensed matter ***,by using spin-and angle-resolved photoemission spectroscopy,we confirm the helical spin texture caused by spin-layer locking in the nodal region in the cuprate superconductor Bi_(2)Sr_(2)CaCu_(2)O_(8+δ)and discover the anisotropy of spin polarizations at nodes alongΓ–X andΓ–Y *** breaking of C_(4)rotational symmetry in electronic spin texture may give deeper insights into understanding the ground state of cuprate superconductors.

关键词： symmetry superconductor breaking

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Low-Loss Lithium Tantalate Photonic Integrated Circuits

Low-Loss Lithium Tantalate Photonic Integrated Circuits

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Conference on Lasers and Electro-Optics Europe (CLEO EUROPE)

作者： Chengli Wang Zihan Li Yang Chen Kai Huang Xinjian Ke Johann Riemensberger Rui Ning Wang Xin Ou Tobias J. Kippenberg Institute of Physics Swiss Federal Institute of Technology Lausanne (EPFL) Lausanne Switzerland State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China

ISBN: (纸本)9798350345995

Lithium tantalate (LiTaO 3 , L T), like lithium niobate (LiNbO 3 , LN), is a traditional ferroelectric crystal with superior electro-optic and piezo-electric properties. Many studies based on LiTaO 3 bulk materials clearly show that LiTaO 3 exhibits a higher optical duration [1], a weaker birefringence effect, a wider transparency window (0.24 – 5.5 µm) [2] and a lower dielectric loss [3] compared with LN. However, there are few studies on photonic integrated LiTaO 3 thin films.

关键词： Birefringence Lithium niobate Quantum computation Scanning electron microscopy Thin films Transparency

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Superconductivity and pseudogap features of an isolated FeAs layer in KCa_(2)Fe_(4)As_(4)F_(2) unraveled by STM/STS

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Science China(Physics,Mechanics & Astronomy) 2023年第8期66卷 131-138页

作者： Shuai Shao Fan Zhang Zongyuan Zhang Teng Wang Yanwei Wu Yubing Tu Jie Hou Xingyuan Hou Ning Hao Gang Mu Lei Shan Information Materials and Intelligent Sensing Laboratory of Anhui Province Institutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Key Laboratory of Structure and Functional Regulation of Hybrid Materials(Anhui University) Ministry of EducationHefei 230601China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions High Magnetic Field Laboratory Hefei Institutes of Physical Science(HFIPS)Chinese Academy of SciencesUniversity of Science and Technology of ChinaHefei 230031China

To reveal the intrinsic properties of the basic superconducting units,i.e.,the single layered FeSe/FeAs in iron-based superconductors or CuO_(2) planes in cuprate superconductors,is a necessary prerequisite for understanding the mechanism of high-Tc *** to now,an isolated FeAs layer has rarely been studied due to the difficulty in materials ***,we report a scanning tunneling microscopy/spectroscopy(STM/STS)study on the iron-based superconductor KCa_(2)Fe_(4)As_(4)F_(2).In situ cleavage produced a single FeAs layer covered by a reconstructed K surface,which is isolated from the bulk by the underlying CaF layer and shows multi-band superconductivity with a much lower T_(c) than its bulk *** the exposed As-terminated regions with coverage of scattered K atoms,a pseudogap was observed,leading to an inhomogeneous superconductivity without long-range phase coherence in real space,which is remarkably similar to the high-T_(c) cuprate *** results provide a new perspective to understanding the origin of superconductivity in iron-based superconductors.

关键词： iron-based superconductor two-dimensional properties electronic correlation carrier doping scanning tunneling microscopy/spectroscopy

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Compact athermal silicon Mach-Zehnder interferometer based on bi-level taper

Compact athermal silicon Mach-Zehnder interferometer based o...

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2021 Asia Communications and Photonics Conference, ACP 2021

作者： Zhao, Yingxuan Huang, Haiyang Qiu, Chao Sheng, Zhen Gan, Fuwan State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

We present a novel compact and temperature insensitive Mach-Zehnder interferometer based on bi-level taper and a multimode waveguide. The wavelength thermal dependence of the device is around 15pm/°C in the wavel... 详细信息

ISBN: (纸本)9781957171005

关键词： Mach-Zehnder interferometers

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Plasma-Induced Defect Formation on Hexagonal Boron Nitride Surface

SSRN

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SSRN 2024年

作者： Chen, Lingxiu Sun, Qingxu Sun, Hongyu Wu, Junyuan Jiang, Chengxin Zhang, Yang Shi, Liwei Wang, Haomin School of Materials Science and Physics China University of Mining and Technology Xuzhou221116 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China

Defect formation is inevitable in the preparation and application of two-dimensional (2D) materials, profoundly impacting their properties. Surface defects can also be used as reaction sites to achieve functional doping of 2D materials. Therefore, achieving controllable formation and application of defects in 2D materials is crucial. In this study, we utilize a remote plasma-enhanced chemical vapor deposition (R-PECVD) system to carry out controllable induced defects on hexagonal boron nitride (h-BN) surface. Atomic force microscopy (AFM) friction images and oxygen etching experiments confirm the efficacy of defect formation, with observed etching patterns indicating defect depths. Graphene growth experiments on h-BN substrates treated with varying plasma powers demonstrate a correlation between defect density and graphene nucleation density. Subsequent preparation of graphene films on defect-induced h-BN surfaces highlight the potential for enhancing graphene coverage. These findings offer a feasible solution for the functional modification and defect application of 2D materials. © 2024, The Authors. All rights reserved.

关键词： Nucleation

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Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2ferroelectric film with in-situ rapid thermal annealing

Atomic visualization of the emergence of orthorhombic phase ...

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2022 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2022

作者： Xin, Tianjiao Zheng, Yonghui Cheng, Yan Du, Kai Wang, Yiwei Gao, Zhaomeng Su, Diqing Zheng, Yunzhe Zhong, Qilan Liu, Cheng Huang, Rong Duan, Chungang Song, Sannian Song, Zhitang Lyu, Hangbing Department of Electronics Shanghai China State Key Laboratory of Functional Materials for Informatics Chinese Academy of Sciences Shanghai Institute of Microsystem and Information Technology Shanghai China Huawei Technologies Co. Shenzhen China Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665497725

For the first time, the dynamic process of orthorhombic (o-) phase emergence during rapid thermal annealing in polycrystalline Hf0.5Zr0.5O2 (HZO) ferroelectric film was directly visualized though in-situ spherical aberration corrected transmission electron microscopy technique. We have the following main observations: (1) o-phase nucleates from centrosymmetric tetragonal (t-) phase at top TiN/HZO interface where the oxygen vacancy (Vo) concentration is rich, identifying that Vo is helpful to lower the free energy of o-phase;(2) o-phase appears in both heating up and cooling down stages. The o-phase formed in the heating stage rapidly transforms into t-phase again as the temperature further increasing, and the one formed in the cooling stage is retained. These findings provide solid evidence on the o-phase origin in fluorite-type ferroelectric materials. © 2022 IEEE.

关键词： Free energy

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