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2023 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2023

作者： Aiba, Yuta Higashi, Yusuke Tanaka, Hitomi Tanaka, Hiroki Kikushima, Fumie Fujisawa, Toshio Mukaida, Hideko Miura, Masayuki Sanuki, Tomoya Institute of Memory Technology Research & Development Japan Memory Div Kioxia Corporation Japan

ISBN: (纸本)9784863488069

This report is the first to demonstrate cryogenic 3D flash memory of 7-bits per cell with the recovery annealing applied repeatedly. We combined 77 K cryogenic operation and epi-Si channel to improve the data retention, read noise, and program noise, and their degradation caused by Program/Erase (P/E) cycles. We further applied 200°C annealing which recovers performance degradations under appropriate cell Vth conditions. Reliable 7-bits per cell operation can maintain performance and energy efficiency competitive to current QLC and NL-HDD technologies. Co-optimization of process technology, memory operation, and cooling system is a promising solution for future sustainable bit cost scaling. © 2023 JSAP.

关键词： Cells

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technology-Dependent Modeling of MOSFET Parasitic Capacitances for Circuit Simulation 35

Technology-Dependent Modeling of MOSFET Parasitic Capacitanc...

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35th International Conference on Microelectronic Test Structure, ICMTS 2023

作者： Navarro, Dondee Tanaka, Chika Adachi, Kanna Naito, Takeshi Tada, Kenshi Hokazono, Akira Memory Division KIOXIA Corporation Yokohama Japan Institute of Memory Technology Research and Development KIOXIA Corporation Yokohama Japan

ISBN: (纸本)9798350346534

Models for parasitic capacitances in the MOSFET overlap region are developed for circuit simulation. In particular, the overlap capacitance (Cov) model considers the modulation of the overlap length due to the dynamic depletion of channel/LDDjunction, which is the physical origin of the Cov bias-dependence. The models are implemented in Verilog-A, and incorporated in a MOSFET model for circuit simulation. Reproduction of device simulation results and RF-CMOS gatedrain capacitance measurements are verified. © 2023 IEEE.

关键词： Circuit simulation

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Atomic Layer Deposition of Perpendicularly Magnetized Co Layers Showing Current-induced Domain Wall Motion

Atomic Layer Deposition of Perpendicularly Magnetized Co Lay...

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2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023

作者： Kado, Masaki Tokuda, Yoshinori Ootera, Yasuaki Umetsu, Nobuyuki Quinsat, Michael Fukumizu, Hiroyuki Kondo, Tsuyoshi Institute of Memory Technology Research and Development Kioxia Corporation Yokohama235-0032 Japan

ISBN: (纸本)9798350338362

Successful preparation of perpendicularly magnetized Co thin layers on Pt seed-layers using atomic layer deposition (ALD) technique with Co(PF3)4H as a precursor is reported. The residual phosphorus content in the samples, due to low deposition temperatures to realize ALD, was reduced effectively by tuning ALD parameters. Spin-orbit-torque driven current-induced domain wall motion was observed in the strip containing ALD Co layer prepared with the low phosphorus condition. © 2023 IEEE.

关键词： Atomic layer deposition

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Ultra-High Endurance (>1012) and High Drive-Current Selector in Sub-30nmΦ Cell using Stable Oxide Doped with As-Se Free High Melting-Point Compound 8

Ultra-High Endurance (>1012) and High Drive-Current Selector...

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8th IEEE Electron Devices technology and Manufacturing Conference, EDTM 2024

作者： Matsushima, Yosuke Iwasaki, Takeshi Daibou, Tadaomi Sasaki, Takayuki Shimoda, Yutaro Qi, Zhu Goto, Masakazu Sato, Yuya Onizaki, Makoto Nagamine, Makoto Amano, Minoru Kawai, Hiroki Tokuhira, Hiroki Chokawa, Kenta Takashima, Rina Tsukagoshi, Takayuki Saitoh, Masumi Ikeda, Keiji Komatsu, Katsuyoshi Institute of Memory Technology Research & Development Kioxia Corporation 800 Yamanoisshiki-Cho Yokkaichi Mie512-8550 Japan

ISBN: (纸本)9798350371529

We demonstrate ultra-high endurance selector with excellent scalability toward high-performance cross-point storage class memory (SCM). By employing stable oxide doped with high melting-point (T_m) compound as a selector, atomic diffusion during cycling is strongly suppressed even for small cell (sub-30nmφ) and high drive current, which is confirmed by thermal TCAD and ab initio calculations. The fabricated sub-30nmφ pillar As-Se free selector achieves 1012 cycles, low half-selected current (4nA) and high drive current density (15MA/cm2). © 2024 IEEE.

关键词： Selenium compounds

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Fluorine-free Word Line Molybdenum Process for Enhancing Scalability and Reliability in 3D Flash memory

Fluorine-free Word Line Molybdenum Process for Enhancing Sca...

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2024 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2024

作者： Fukushima, T. Kashima, T. Seto, S. Ohtori, H. Kato, M. Katou, K. Takehira, H. Sugawara, Y. Zhu, Z. Hara, K. Osanai, R. Beppu, T. Tahara, H. Ishiku, T. Takahashi, K. Ariga, T. Ueda, Y. Matamura, Y. Mukae, Y. Takeguchi, N. Maruyama, Y. Nishikawa, R. Kitagawa, H. Asakawa, J. Uchiyama, Y. Ohuchi, K. Sekine, K. Advanced Memory Development Center Japan Western Digital Corporation 800 Yamanoissiki-Cho Mie-Pref Yokkaichi512-8550 Japan Institute of Memory Technology Research & Development Kioxia Corporation Japan

ISBN: (纸本)9798350361469

A state-of-the-art fluorine-free word line (WL) molybdenum (Mo) process has been established for future 3D flash memory. Application of Mo to WLs can accelerate scaling of cells in both the vertical and horizontal directions with lower RC delay and lower leakage failure rates compared to traditional tungsten. In addition to being fluorine-free, key attributes of the process are optimization of Mo recess by innovative chemical and improvement of Mo filling to remove oxygen residue in Mo voids. These techniques can extend the scaling limit of 3D flash memory. © 2024 IEEE.

关键词： Fluorine free molybdenum oxygen scalability word line

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Fabrication of Dual Damascene structure with Nanoimprint lithography and Dry-etching

Fabrication of Dual Damascene structure with Nanoimprint lit...

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Novel Patterning Technologies 2023

作者： Takeuchi, Norikazu Hasegawa, Genna Komukai, Toshiaki Iwasaki, Takahiro Hatano, Masayuki Komori, Motofumi Kono, Takuya Process Technology Research & Development Center Institute of Memory Technology Research & Development Kioxia Corporation 800 Yamanoissiki-cho Yokkaichi-shi Mie-ken512-8500 Japan

ISBN: (纸本)9781510661011

Nanoimprint lithography (NIL) has received attention as alternative lithographic technology, which can fabricate fine patterns of semiconductor devices at low cost. Application of NIL may lead to the reduction of number of process steps and cost of manufacturing of dual-damascene structure, by simultaneous fabrication of holes and trenches. Therefore, in this study, we investigated fabrication of dual-damascene structure using NIL and dry-etching. However, the difficulty in dry-etching process is high as the holes and trenches are etched together using single resist mask. Suppression of defects during the NIL process and the suppression of resist consumption and CD shift during the etching process, is critical. To address these issues, we used a high etching resistance resist, optimized the NIL process to reduce defects, and optimized the template structure and etching process to suppress resist consumption and CD shift. As a result, a dual-damascene structure with L/S = 4X/4X nm was obtained. © 2023 SPIE.

关键词： Nanoimprint lithography

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Lack of interferon regulatory factor 3 leads to anxiety/depression-like behaviors through disrupting the balance of neuronal excitation and inhibition in mice

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Genes & Diseases 2023年第3期10卷 1062-1074页

作者： Junjie Li Yayan Pang Yehong Du Lei Xia Mulan Chen Yepeng Fan Zhifang Dong Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren's Hospital of Chongqing Medical UniversityChongqing 400014China

Disrupting the balance of neuronal excitation and inhibition (E/I) is an important pathogenic mechanism of anxiety and depression. Interferon regulatory factor 3 (IRF3) plays a key role in the innate immune response, and activation of IRF3 triggers the expression of type I interferons and downstream interferon-stimulated genes, which are associated with anxiety and depression. However, whether IRF3 participates in the pathogenesis of anxiety/depression by regulating E/I balance remains poorly understood. Here, we reported that global knockout (KO) of IRF3 (IRF3^(−/−)) significantly increased anxiety/depression-like behaviors, but did not affect normal spatial learning and memory. Compared with wild type (WT) control mice, the E/I balance was disrupted, as reflected by enhanced glutamatergic transmission and decreased GABAergic transmission in the neurons of hippocampal CA1 and medial prefrontal cortex (mPFC) in IRF3-KO mice. Importantly, genetic rescue of IRF3 expression by adeno-associated virus (AAV) was sufficient to alleviate anxiety/depression-like behaviors and restore the neuronal E/I balance in IRF3-KO mice. Taken together, our results indicate that IRF3 is critical in maintaining neuronal E/I balance, thereby playing an essential role in ensuring emotional stability.

关键词： Anxiety Depression Hippocampus IRF3 Medial prefr ontal cortex Synaptic transmission

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Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash memory

Highly Scalable Metal Induced Lateral Crystallization (MILC)...

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2023 IEEE Symposium on VLSI technology and Circuits, VLSI technology and Circuits 2023

作者： Ishihara, N. Shimada, Y. Ochi, T. Seto, S. Matsuo, H. Yamashita, H. Morita, S. Ukishima, M. Uejima, K. Arayashiki, Y. Kajiwara, S. Murayama, A. Nishiyama, K. Sugimae, K. Mori, S. Saito, Y. Shundo, T. Maeda, A. Kamiya, H. Uchiyama, Y. Fujiwara, M. Aiso, F. Sekine, K. Ohtani, N. Advanced Memory Development Center Japan Institute of Memory Technology Research & Development Kioxia Corporation Japan Western Digital Corporation 800 Yamanoissiki-Cho Mie-Pref Yokkaichi512-8550 Japan

ISBN: (纸本)9784863488069

State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been demonstrated for 3D flash memory with ultra-high (over 300) layers. For the first time, 14-μm-long macaroni silicon (Si) channels in vertical memory hole are fully single-crystallized. Furthermore, by using newly developed nickel (Ni) gettering technique, the 112 word-line-layer 3D flash memory exhibits cell array performances such as read noise reduction of 40% or more, and 10-times channel conductance without any degradations of cell reliability. © 2023 JSAP.

关键词： Flash memory

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Optimal Design of WET Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization 30

Optimal Design of WET Etching Bath for 3D Flash Memories Usi...

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30th International Symposium on Semiconductor Manufacturing, ISSM 2024

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokkaichi-shi Japan Kioxia Corporation Ai and System Research Center Frontier Technology R and D Institute Yokohama-shi Japan Kioxia Corporation Advanced Memory Process Development Center Memory Division Yokkaichi-shi Japan

ISBN: (纸本)9798331510589

In recent years, the complexity of semiconductor manufacturing processes has increased, leading to a growing need for the high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids within the process bath can vary depending on the device structure, causing variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that iteratively adjusts the device structure based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memories, word-line formation in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process. This fluctuation may cause various problems. This study introduces an innovative method utilizing multi-objective Bayesian optimization to derive optimal wet etching bath design parameters;this method is informed by image and physical-quantity data from fluid dynamics simulations [1]. This approach is validated through simulation experiments, whose results are used to identify the best possible wet etching bath designs effectively. © 2024 IEEE.

关键词： Wet etching

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Fluorine-free Word Line Molybdenum Process for Enhancing Scalability and Reliability in 3D Flash memory

Fluorine-free Word Line Molybdenum Process for Enhancing Sca...

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Symposium on VLSI technology

作者： T. Fukushima T. Kashima S. Seto H. Ohtori M. Kato K. Katou H. Takehira Y. Sugawara Z. Zhu K. Hara R. Osanai T. Beppu H. Tahara T. Ishiku K. Takahashi T. Ariga Y. Ueda Y. Matamura Y. Mukae N. Takeguchi Y. Maruyama R. Nishikawa H. Kitagawa J. Asakawa Y. Uchiyama K. Ohuchi K. Sekine Advanced Memory Development Center Western Digital Corporation Yokkaichi Japan Institute of Memory Technology Research & Development Kioxia Corporation

ISBN: (数字)9798350361469

ISBN: (纸本)9798350361476

关键词： Three-dimensional displays Scalability Tungsten Very large scale integration Filling Dielectrics Reliability

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