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IEEE International memory Workshop (IMW)

作者： Kazuma Hasegawa Yuta Aiba Xu Li Hitomi Tanaka Takayuki Miyazaki Hideko Mukaida Masaru Koyanagi Masayuki Miura Tomoya Sanuki Memory Div. Kioxia Corporation Japan Institute of Memory Technology Research & Development Kioxia Corporation Japan

Power consumption and thermal throttling of the 3D flash memory have become a prevalent issue owing to the requirement for higher performance in SSDs. One of the main causes is the on-die charge pump circuit, which has a low conversion efficiency and induces high heat generation. The heat generation becomes a critical issue due to the high-density mounting of components, especially in mobile products. In this work, we fabricated a 3D flash memory with an in-package boost converter to replace the on-die charge pump circuit. The boost converter consists of three types of discrete components: a DC-DC converter, an inductor, and capacitors. Using the in package boost converter, we show that the power consumption can be reduced by up to 39% while the temperature rise can be reduced by 50%. Furthermore, when the number of word line (WL) layers reaches 1000, a significantly large power reduction up to 43% can be achieved, resulting in 9% smaller power consumption compared to the conventional 1xx layers. The proposed in-package boost converter is an effective scheme to suppress the power consumption and heat generation and can realize the development of a thermal throttling-less SSD.

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technology-Dependent Modeling of MOSFET Parasitic Capacitances for Circuit Simulation

Technology-Dependent Modeling of MOSFET Parasitic Capacitanc...

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IEEE International Conference on Microelectronic Test Structures

作者： Dondee Navarro Chika Tanaka Kanna Adachi Takeshi Naito Kenshi Tada Akira Hokazono Memory Division KIOXIA Corporation Yokohama Japan KIOXIA Corporation Institute of Memory Technology Research and Development Yokohama Japan

Models for parasitic capacitances in the MOSFET overlap region are developed for circuit simulation. In particular, the overlap capacitance ($C_{\mathrm{o}\mathrm{v}}$) model considers the modulation of the overlap length due to the dynamic depletion of channel/LDDjunction, which is the physical origin of the $C_{\mathrm{o}\mathrm{v}}$ bias-dependence. The models are implemented in Verilog-A, and incorporated in a MOSFET model for circuit simulation. Reproduction of device simulation results and RF-CMOS gatedrain capacitance measurements are verified.

关键词： MOSFET Circuit simulation Simulation Modulation Logic gates Capacitance Microelectronics

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Optimal Design of Wet Etching Bath for 3D Flash Memories Using Multi-Objective Bayesian Optimization

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IEEE Transactions on Semiconductor Manufacturing 2025年

作者： Kouda, Miyuki Mori, Yumi Sugita, Tomohiko Ng, Youyang KIOXIA Corporation AI and System Research Center Frontier Technology R and D Institute Japan KIOXIA Corporation Advanced Memory Process Development Center Memory Division Japan

Recently, the complexity of semiconductor manufacturing processes has increased, resulting in a growing need for high-precision optimization of device structures. For example, in batch-type wet etching devices, the flow of chemical liquids in the process bath can vary depending on the device structure, which causes variations in the etching state of the wafer. This issue is addressed using a feedback mechanism that adjusts the device structure iteratively based on the results of an etching experiment, thereby achieving more uniform etching conditions. However, this approach requires a large number of trial experiments. In the fabrication process of 3D flash memory devices, the formation of word lines in the silicon substrate requires precise control of the silicon concentration in the etching solution. However, this concentration can fluctuate due to the dissolution of the SiN film during the etching process, which can cause various problems. Thus, this study proposes an innovative multi-objective Bayesian optimization method that is informed by image and physical quantity data from fluid dynamics simulations to derive optimal wet etching bath design parameters. The proposed method was validated through simulation experiments, and the simulation results were used to identify the best possible wet etching bath designs. © 1988-2012 IEEE.

关键词： Wet etching

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Fast Readable Multi-Cell Coding for Flash memory

Fast Readable Multi-Cell Coding for Flash Memory

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IEEE International Symposium on Information Theory

作者： Hironori Uchikawa Noboru Shibata Taira Shibuya Memory Division Kioxia Corporation Kanagawa Japan Frontier Technology Research & Development Institute Kioxia Corporation Kanagawa Japan

ISBN: (数字)9798350382846

ISBN: (纸本)9798350382853

Flash memory is gaining attention for achieving large-capacity and high-speed storage devices. In particular, multi-level flash memory is widely used for increasing storage capacity. However, it faces slower access speeds as the number of read thresholds increases. Sharon et al. proposed the random input-output (RIO) code, which reduces the number of read thresholds to one for multi-level flash memory. However, the RIO code offers lower storage capacity than conventional uncoded multi-level flash memory. We propose SHare Coding (SHC), which maintains storage capacity and achieves higher speeds with fewer read thresholds than conventional uncoded methods.

关键词： Flash memory cells Codes Reliability theory Reliability engineering Encoding Flash memories Faces

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Identification of key atomic process of Metal-induced lateral crystallization from First-principles Calculations

Identification of key atomic process of Metal-induced latera...

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International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

作者： Yutaro Ogawa Hikari Suzuki Masayasu Miyata Advanced Memory Development Center Memory Division Kioxia Corporation Yokohama Japan Core Technology Research Center Frontier Technology R&D Institute Kioxia Corporation Yokohama Japan

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

In order to improve the efficiency of metal-induced lateral crystallization (MILC) using Ni, it is important to understand the fundamental mechanisms. In this study, the NiSi 2 /amorphous Si (a-Si) interface is appropriately modeled and the atom transfer behavior during the MILC process was explored by first-principles calculations. It is found that the overall picture of MILC mechanism can be effectively comprehended through three fundamental processes: (1) the formation of Ni vacancies at the a-Si interface, (2) the diffusion of Ni vacancies within the bulk NiSi2, and (3) the reconstruction of the c-Si interface. The trends under stress, observed in experiments, are explained by applying this mechanism to the MILC process.

关键词： Surface reconstruction Crystallization Market research Nickel Silicon Semiconductor process modeling Epitaxial growth Stress Surface treatment

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Highly Scalable Metal Induced Lateral Crystallization (MILC) Techniques for Vertical Si Channel in Ultra-High (> 300 Layers) 3D Flash memory

Highly Scalable Metal Induced Lateral Crystallization (MILC)...

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Symposium on VLSI technology

作者： N. Ishihara Y. Shimada T. Ochi S. Seto H. Matsuo H. Yamashita S. Morita M. Ukishima K. Uejima Y. Arayashiki S. Kajiwara A. Murayama K. Nishiyama K. Sugimae S. Mori Y. Saito T. Shundo A. Maeda H. Kamiya Y. Uchiyama M. Fujiwara F. Aiso K. Sekine N. Ohtani Advanced Memory Development Center Institute of Memory Technology Research & Development Kioxia Corporation Western Digital Corporation 800 Yamanoissiki-Cho Yokkaichi Mie-Pref Japan

State-of-the-art Metal Induced Lateral Crystallization (MILC) techniques have been demonstrated for 3D flash memory with ultra-high (over 300) layers. For the first time, 14$-\mu$m-long macaroni silicon (Si) channels in vertical memory hole are fully single-crystallized. Furthermore, by using newly developed nickel (Ni) gettering technique, the 112 word-line-layer 3D flash memory exhibits cell array performances such as read noise reduction of 40% or more, and 10-times channel conductance without any degradations of cell reliability.

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miR-429-3p mediates memory decline by targeting MKP-1 to reduce surface GluA1- containing AMPA receptors in a mouse model of Alzheimer’s disease

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Acta Pharmaceutica Sinica B 2024年第2期14卷 635-652页

作者： Man Luo Yayan Pang Junjie Li Lilin Yi Bin Wu Qiuyun Tian Yan He Maoju Wang Lei Xia Guiqiong He Weihong Song Yehong Du Zhifang Dong Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren’s Hospital of Chongqing Medical UniversityChongqing 400014China Department of Anatomy Basic Medical CollegeChongqing Medical UniversityChongqing 400016China Townsend Family Laboratories Department of PsychiatryThe University of British ColumbiaVancouver BC V6T 1Z3Canada Oujiang Laboratory(Zhejiang Lab for Regenerative Medicine Vision and Brain Health)Institute of AgingKey Laboratory of Alzheimer’s Disease of Zhejiang ProvinceZhejiang Clinical Research Center for Mental DisordersSchool of Mental Health and the Affiliated Kangning HospitalWenzhou Medical UniversityWenzhou 325000China Institute for Brain Science and Disease of Chongqing Medical University Chongqing 400016China

Alzheimer ’s disease(AD) is a leading cause of dementia in the ***-activated protein kinase phosphatase 1(MKP-1) plays a neuroprotective role in ***,the molecular mechanisms underlying the effects of MKP-1 on AD have not been extensively ***(miRNAs) regulate gene expression at the post-transcriptional level,thereby repressing mRNA ***,we reported that the microRNA-429-3p(miR-429-3p) was significantly increased in the brain of APP23/PS45 AD model mice and N2AAPPAD model *** further found that miR-429-3p could downregulate MKP-1 expression by directly binding to its 3’-untranslated region(3’ UTR).Inhibition of miR-429-3p by its antagomir(A-miR-429) restored the expression of MKP-1 to a control level and consequently reduced the amyloidogenic processing of APP and Aβ *** importantly,intranasal administration of A-miR-429 successfully ameliorated the deficits of hippocampal CA1 long-term potentiation and spatial learning and memory in AD model mice by suppressing extracellular signal-regulated kinase(ERK1/2)-mediated GluAl hyperphosphorylation at Ser831 site,thereby increasing the surface expression of GluAl-containing α-amino-3-hydroxy-5-methyl-4-isoxazolepropionic acid receptors(AMPARs).Together,these results demonstrate that inhibiting miR-429-3p to upregulate MKP-1 effectively improves cognitive and synaptic functions in AD model mice,suggesting that miR-429/MKP-1 pathway may be a novel therapeutic target for AD treatment.

关键词： Alzheimer's disease MKP-1 miR-429-3p AMPAreceptor Learning and memory Long-term potentiation

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A genomic association study revealing subphenotypes of childhood steroid-sensitive nephrotic syndrome in a larger genomic sequencing cohort

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Genes & Diseases 2024年第4期11卷 400-410页

作者： Han Chan Fenfen Ni Bo Zhao Huimin Jiang Juanjuan Ding Li Wang Xiaowen Wang Jingjing Cui Shipin Feng Xiaojie Gao Xueying Yang Huan Chi Hao Lee Xuelan Chen Xiaoqin Li Jia Jiao Daoqi Wu Gaofu Zhang Mo Wang Yupeng Cun Xiongzhong Ruan Haiping Yang Qiu Li Department of Nephrology Children's Hospital of Chongqing Medical UniversityNational Clinical Research Center for Child Health and DisordersMinistry of Education Key Laboratory of Child Development and DisordersChongqing Key Laboratory of PediatricsChongqing 400014China Department of Nephrology Shenzhen Children's HospitalShenzhenGuangdong 518034China Department of Nephrology Kunming Children's HospitalKunming Medical UniversityKunmingYunnan 650228China Department of Nephrology Wuhan Children's HospitalTongji Medical College of Huazhong University of Science and TechnologyWuhanHubei 430015China Department of Nephrology Chengdu Women and Children Central HospitalChengduSichuan 610073China Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren's Hospital of Chongqing Medical UniversityChongqing 400014China Department of Nephrology John Moorhead Research LaboratoryUniversity College London Medical SchoolRoyal Free CampusUniversity College LondonLondon NW32PFUnited Kingdom

Dissecting the genetic components that contribute to the two main subphenotypes of steroid-sensitive nephrotic syndrome(SSNS)using genome-wide association studies(GWAS)strategy is important for understanding the *** conducted a multicenter cohort study(360 patients and 1835 controls)combined with a GWAS strategy to identify susceptibility var-iants associated with the following two subphenotypes of ssNS:steroid-sensitive nephrotic syn-drome without relapse(SSNswR,181 patients)and steroid-dependent/frequent relapse nephrotic syndrome(SDNS/FRNS,179 patients).The distribution of two single-nucleotide poly-morphisms(SNPs)in ANKRD36 and ALPG was significant between SSNSWR and healthy controls,and that of two SNPs in GAD1 and HLA-DQA1 was significant between SDNS/FRNS and healthy ***,rs1047989 in HLA-DQA1 was a candidate locus for SDNS/FRNS but not for *** significant SNPs were observed between SSNSWR and SDNS/***,chromosome 2:171713702 in GAD1 was associated with a greater steroid dose(>0.75 mg/kg/d)upon relapse to first remission in patients with SDNS/FRNS(odds ratio=3.14;95%confidence interval,0.97-9.87;P=0.034).rs117014418 in APOL4 was significantly associated with a decrease in eGFR of greater than 20%compared with the baseline in SDNS/FRNS patients(P=0.0001).Protein-protein intersection network construction suggested that HLA-DQA1 and HLA-DQB1 function together through ***,SSNSWR belongs to non-HLA region-dependent nephropathy,and the HLA-DQA/DQB region is likely strongly associated with dis-ease relapse,especially in SDNS/*** study provides a novel approach for the GWAS strategy of SsNS and contributes to our understanding of the pathological mechanisms of SSNSWRandSDNS/FRNS.

关键词： Frequentrelapse Genome-wide association study Human leukocyte antigen region Steroid-sensitive nephrotic syndrome

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Measurability analysis of the HAR structure in 3D memory by T-SAXS simulation 35

Measurability analysis of the HAR structure in 3D memory by ...

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Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV 2021

作者： Sasaki, Kaori Hashimoto, Takaki Kuo, Yenting Tsukada, Hiroshi Tanizaki, Hiroyuki Institute of Memory Technology Research and Development Kioxia Corporation 800 Yamanoisshiki-Cho Yokkaichi Mie-Pref512-8550 Japan

ISBN: (纸本)9781510640559

To control the HAR (High Aspect Ratio) processes for producing 3D memories, a non-destructive and highly accurate measurement method is required. We report simulation results of T-SAXS (Transmission Small Angle X-ray Scattering) measurability analysis to evaluate its measurement capability of profile parameters for typical HAR structures. After that, we discuss T-SAXS extensibility for profile measurements of future 3D memories, based on measurability analysis for various HAR structural models by varying their structural parameters. For the deep depth region which is important for the future 3D memory shape measurement, we confirmed that the HAR structure with its depth = 30 µm can be measured under the assumed criteria of precision © 2021 SPIE.

关键词： Aspect ratio

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Glutamate and GABAA receptor crosstalk mediates homeostatic regulation of neuronal excitation in the mammalian brain

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Signal Transduction and Targeted Therapy 2022年第11期7卷 4156-4173页

作者： Ya Wen Zhifang Dong Jun Liu Peter Axerio-Cilies Yehong Du Junjie Li Long Chen Lu Zhang Lidong Liu Jie Lu Ning Zhou Dong Chuan Wu Yu Tian Wang DM Centre for Brain Health and Department of Medicine Vancouver Coastal Health Research InstituteUniversity of British ColumbiaVancouverBCV6T 2B5Canada Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren’s Hospital of Chongqing Medical UniversityChongqing400014P.R.China iHuman Institue ShanghaiTech UniversityShanghaiP.R.China

Maintaining a proper balance between the glutamate receptor-mediated neuronal excitation and the A type of GABA receptor(GABAAR)mediated inhibition is essential for brain functioning;and its imbalance contributes to the pathogenesis of many brain disorders including neurodegenerative diseases and mental *** we identify a novel glutamate-GABAAR interaction mediated by a direct glutamate binding of the *** HEK293 cells overexpressing recombinant GABAARs,glutamate and its analog ligands,while producing no current on their own,potentiate GABA-evoked *** potentiation is mediated by a direct binding at a novel glutamate binding pocket located at theα+/β−subunit interface of the ***,the potentiation does not require the presence of aγsubunit,and in fact,the presence ofγsubunit significantly reduces the potency of the glutamate *** addition,the glutamate-mediated allosteric potentiation occurs on native GABAARs in rat neurons maintained in culture,as evidenced by the potentiation of GABAAR-mediated inhibitory postsynaptic currents and tonic *** importantly,we found that genetic impairment of this glutamate potentiation in knock-in mice resulted in phenotypes of increased neuronal excitability,including decreased thresholds to noxious stimuli and increased seizure *** results demonstrate a novel cross-talk between excitatory transmitter glutamate and inhibitory *** a rapid and short feedback loop between the two principal excitatory and inhibitory neurotransmission systems may play a critical homeostatic role in fine-tuning the excitation-inhibition balance(E/I balance),thereby maintaining neuronal excitability in the mammalian brain under both physiological and pathological conditions.

关键词： excitation thereby maintained

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