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NLRP3 inflammasome as a novel therapeutic target for Alzheimer’s disease

Signal Transduction and Targeted Therapy 2020年第1期5卷 2098-2099页

作者： Yun Zhang Zhifang Dong Weihong Song Townsend Family Laboratories Department of PsychiatryThe University of British Columbia2255 Wesbrook MallVancouverBC V6T 1Z3Canada Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren’s Hospital of Chongqing Medical UniversityChongqingChina

In a recent publication in Nature,Ising et *** the effect of the NLRP3 inflammasome on Aβ-induced tau pathology in Alzheimer’s disease(AD).The findings indicate that NLRP3 may be a novel target for the treatment of AD.

关键词： Alzheimer Aβ tau

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Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping

Design Principle of Channel Material for Oxide-Semiconductor...

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International Electron Devices Meeting (IEDM)

作者： H. Kawai H. Fujiwara J. Kataoka N. Saito T. Ueda T. Enda T. Ishihara K. Ikeda Institute of Memory Technology Research & Development Kioxia Corporation Yokkaichi-shi Mie Prefecture Japan

ISBN: (数字)9781728188881

ISBN: (纸本)9781728188898

We propose material design guideline of oxide semiconductor field-effect transistor (OS-FET) based on first-principles calculation, and experimentally demonstrate excellent FET characteristics for the first time. Fluorine-doped In-Ga-Zn-O (IGZO) channel OS-FET exhibits both high thermal stability (>400°C) and high on-current at optimum F doping concentration which are required for co-integration with Si-CMOS as BEOL transistor. Our calculation revealed that high thermal stability comes from the release of overstress in IGZO by substitution of O by F. On the other hand, overdose of F decreases on-current by forming electron traps of metal-metal bonds. Considering these two different mechanisms behind, we successfully propose a breakthrough concept to improve thermal stability of OS-FET without degradation of on-current. Our results pave a new way for realizing high-performance BEOL transistors for 3D-LSI application.

关键词： Degradation Electron traps Annealing Doping Ions Stability analysis Thermal stability

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High Performance In-Zn-O FET with High On-current and Ultralow (-20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application 26

High Performance In-Zn-O FET with High On-current and Ultral...

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26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019

作者： Saito, Nobuyoshi Sawabe, Tomoaki Kataoka, Junji Ueda, Tomomasa Tezuka, Tsutomu Ikeda, Keiji Institute of Memory Technology Research and Development Toshiba Memory Corporation 1 Toshiba-cho Saiwai-ku Kawasaki Kanagawa212-0058 Japan

ISBN: (纸本)9784990875374

We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm2/Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (-20 A/μm) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to maintain even at thin gate insulator with an equivalent oxide thickness of 6.2 nm. © 2019 FTFMD.

关键词： Silica

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Modification of Bayesian Optimization for Efficient Calibration of Simulation Models

Modification of Bayesian Optimization for Efficient Calibrat...

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Simulation Winter Conference

作者： Daiki Kiribuchi Masashi Tomita Takeichiro Nishikawa Satoru Yokota Ryota Narasaki Soh Koike Research & Development Center Toshiba Corporation Kawasaki-shi Kanagawa JAPAN Institute of Memory Technology Research & Development Kioxia Corporation Kawasaki-shi Kanagawa JAPAN

ISBN: (数字)9781728194998

ISBN: (纸本)9781728195001

Simulation models contain many parameters that must be adjusted (calibrated) in advance to reduce the error between simulations and experimental results. Bayesian optimization is often applied to minimize error after only a few simulations. However, Bayesian optimization uses only error information, ignoring information on other simulation results. In this paper, we improve Bayesian optimization by utilizing both and show that other simulation results effectively reduce the dimensionality of the parameter space. In an evaluation using actual semiconductor simulation results, the proposed method reduces the number of simulations by 50% compared with random search and conventional Bayesian optimization.

关键词： Simulation Linear programming Bayes methods Numerical models Calibration Optimization

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Approximated EM Algorithms for Estimation of Unknown Coded Discrete memoryless Channels

Approximated EM Algorithms for Estimation of Unknown Coded D...

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GLOBECOM 2020 - 2020 IEEE Global Communications Conference

作者： Naoaki Kokubun Daiki Watanabe Hironori Uchikawa Paul H. Siegel University of California San Diego La Jolla USA Institute of Memory Technology Research & Development Kioxia Corporation Japan

ISBN: (数字)9781728182988

ISBN: (纸本)9781728182995

Mismatch between the true channel and the channel assumed in the design of a communication system can degrade system performance. Joint channel estimation and data recovery via the Expectation-Maximization (EM) algorithm can overcome this problem. Though stable, the EM algorithm can be complex to implement and can exhibit slow convergence. We present approximations of the EM algorithm that reduce computational complexity and accelerate convergence for LDPC-coded discrete memoryless channels. In place of the exact bit-wise maximum a posteriori probability decoder in the E step of the EM algorithm, we use the sum-product decoder and min-sum decoder. In the M step, we use hard information instead of soft information to estimate the channel parameter. In order to evaluate the approximations in a practical channel mismatch scenario, we use a flash memory channel described by a quantized Normal-Laplace mixture model. The simulation results demonstrate that the approximations in the E step can estimate the true channel with low-complexity decoding and those in the M step can accelerate the convergence with reduced measurement precision.

关键词： Decoding Approximation algorithms Channel estimation Convergence Monte Carlo methods Parity check codes Complexity theory

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Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)]

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Japanese Journal of Applied Physics 2024年第11期63卷 119301-119301页

作者： Hiroomi Nakajima Tomoaki Shino Hironobu Furuhashi Jun Nishimura Tomoki Higashi Katsuyuki Fujita Kosuke Hatsuda Ryo Fukuda Takeshi Kajiyama Memory Development Strategy Group2 Memory Development Strategy Division KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan File Memory Device Peripheral Element Development Group File Memory Device Engineering Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Advanced Memory Development Center KIOXIA Corporation 800 Yamanoissiki-Cho Yokkaichi Mie-Pref. 510-0906 Japan Memory Device Engineering Department KIOXIA Systems Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan Circuit Technology Research Department AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Memory Design Group 4 Memory Design Department 2 Memory Design Managing Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan

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Neural Correlates of Perceiving Animacy in Robotic Objects

Research Square

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research Square 2024年

作者： Yizhar, Or Maimon, Amber Tal, Zohar Wald, Iddo Yehoshua Erel, Hadas Friedman, Doron Zuckerman, Oren Amedi, Amir The Baruch Ivcher Institute for Brain Cognition and Technology Baruch Ivcher School of Psychology Reichman University Herzliya Israel Max Planck Institute for Human Development Research Group Adaptive Memory and Decision Making Germany Berlin Germany Computational Psychiatry and Neurotechnology Lab Department of Brain and Cognitive Sciences Ben Gurion University Be’er Sheva Israel Digital Media Lab Department of Mathematics and Computer Science University of Bremen Bremen Germany Proaction Laboratory Faculty of Psychology and Educational Sciences University of Coimbra Coimbra Portugal Media Innovation Lab Sammy Ofer School of Communications Reichman University Herzliya Israel Advanced Reality Lab Sammy Ofer School of Communications Reichman University Herzliya Israel

The prevalence of robots in modern society calls for gaining a fundamental understanding of the underlying principles of human-robot interaction. In particular, we need to understand how people perceive robots and how different physical and social characteristics affect this perception. Here, we examined the neural correlates of observing simple gestures performed by a non-humanoid social robot, focusing on the role of the Ventral Occipitotemporal (VOT) cortex in processing perceived animacy. Our results reveal that a broad bilateral cortical network is activated, comprising areas related to action observation, the social brain, and the visual cortex, including the VOT. We also found a correlation between the level of neural responses in the VOT, especially in the left hemisphere, and individual animacy ratings of the robotic object. This correlation provides a physical basis for such subjective ratings. These results suggest a complex representation of perceived animacy across the lateral-medial axis of the VOT, explained by spatial cortical location and the amplitude of neural responses. Furthermore, we discuss the implications of these findings for understanding how people perceive robots, their behaviors and intentions, which are crucial for developing social robots that can interact with humans more naturally. © 2024, CC BY.

关键词： Human robot interaction

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Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia

Formation of High Reliability Hydrogen-free MONOS Cells Usin...

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International Electron Devices Meeting (IEDM)

作者： Masaki Noguchi Tatsunori Isogai Hiroyuki Yamashita Keiichi Sawa Ryota Fujitsuka Takanori Yamanaka Shunsuke Okada Tomonori Aoyama Fumiki Aiso Junko Abe Yoshihiro Ogawa Seiji Nakagawa Hideshi Miyajima Advanced Memory Development Center Kioxia Corporation Mie Japan Institute of Memory Technology Research and Development Kioxia Corporation Mie Japan

For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated charge-trap SiN and tunnel SiON films are demonstrated. By using deuterated ammonia instead of ammonia as nitridation species in ALD cycles, an ultra-high deuterium/hydrogen ratio has been successfully obtained in both films, and these films showed good endurance for program / erase stress and data retention properties in MONOS capacitors.

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Future of Non-Volatile memory -From Storage to Computing-

Future of Non-Volatile Memory -From Storage to Computing-

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International Electron Devices Meeting (IEDM)

作者： K. Ishimaru Institute of Memory Technology Research and Development Kioxia Corporation Yokkaichi Mie Japan

More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expanded its market and application by reducing the cost per bit ($/GB) and this advancement will continue in coming decades. Many innovations, such as double/quadruple patterning, multi-bit programming, wear leveling, etc. were introduced to keep the cost trend and improve the performance. Now 5G and AI are changing our society and "memory centric" computing system is required for such high level computing. Non-volatile memory is a key component to enable this paradigm shift. The challenges and opportunities of NAND flash and other emerging memories for next decades will be discussed.

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High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application

High Performance In-Zn-O FET with High On-current and Ultral...

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International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

作者： Nobuyoshi Saito Tomoaki Sawabe Junji Kataoka Tomomasa Ueda Tsutomu Tezuka Keiji Ikeda Institute of Memory Technology Research & Development Toshiba Memory Corporation Saiwai-ku Kawasaki Kanagawa 212-0058 Japan

ISBN: (纸本)9781728112596;9784990875367

We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage current and high on-current. Compared with InGaZnO FET, high mobility (>30 cm 2 /Vs) and reduction of source/drain (S/D) parasitic resistance by 75% were achieved by InZnO FET. Analysis of a Schottky barrier height at S/D contact and a band offset between oxide semiconductor channel and gate insulator SiO2 revealed that the reduction of S/D parasitic resistance originated from a lowering of conduction band minimum by InZnO channel. Moreover, ultralow (-20 A/μm) off-state leakage current characteristics including not only S/D leakage current but also gate leakage current were confirmed to maintain even at thin gate insulator with an equivalent oxide thickness of 6.2 nm.

关键词： Field effect transistors Logic gates Leakage currents Insulators Ions Resistance Fabrication

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