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检索条件"机构=Institute of Memory Technology Research and Development"
103 条 记 录,以下是51-60 订阅
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NLRP3 inflammasome as a novel therapeutic target for Alzheimer’s disease
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Signal Transduction and Targeted Therapy 2020年 第1期5卷 2098-2099页
作者: Yun Zhang Zhifang Dong Weihong Song Townsend Family Laboratories Department of PsychiatryThe University of British Columbia2255 Wesbrook MallVancouverBC V6T 1Z3Canada Pediatric Research Institute Ministry of Education Key Laboratory of Child Development and DisordersNational Clinical Research Center for Child Health and DisordersChina International Science and Technology Cooperation Base of Child Development and Critical DisordersChongqing Key Laboratory of Translational Medical Research in Cognitive Development and Learning and Memory DisordersChildren’s Hospital of Chongqing Medical UniversityChongqingChina
In a recent publication in Nature,Ising et *** the effect of the NLRP3 inflammasome on Aβ-induced tau pathology in Alzheimer’s disease(AD).The findings indicate that NLRP3 may be a novel target for the treatment of AD.
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Design Principle of Channel Material for Oxide-Semiconductor Field-Effect Transistor with High Thermal Stability and High On-current by Fluorine Doping
Design Principle of Channel Material for Oxide-Semiconductor...
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International Electron Devices Meeting (IEDM)
作者: H. Kawai H. Fujiwara J. Kataoka N. Saito T. Ueda T. Enda T. Ishihara K. Ikeda Institute of Memory Technology Research & Development Kioxia Corporation Yokkaichi-shi Mie Prefecture Japan
We propose material design guideline of oxide semiconductor field-effect transistor (OS-FET) based on first-principles calculation, and experimentally demonstrate excellent FET characteristics for the first time. Fluo... 详细信息
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High Performance In-Zn-O FET with High On-current and Ultralow (-20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application  26
High Performance In-Zn-O FET with High On-current and Ultral...
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26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
作者: Saito, Nobuyoshi Sawabe, Tomoaki Kataoka, Junji Ueda, Tomomasa Tezuka, Tsutomu Ikeda, Keiji Institute of Memory Technology Research and Development Toshiba Memory Corporation 1 Toshiba-cho Saiwai-ku Kawasaki Kanagawa212-0058 Japan
We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with... 详细信息
来源: 评论
Modification of Bayesian Optimization for Efficient Calibration of Simulation Models
Modification of Bayesian Optimization for Efficient Calibrat...
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Simulation Winter Conference
作者: Daiki Kiribuchi Masashi Tomita Takeichiro Nishikawa Satoru Yokota Ryota Narasaki Soh Koike Research & Development Center Toshiba Corporation Kawasaki-shi Kanagawa JAPAN Institute of Memory Technology Research & Development Kioxia Corporation Kawasaki-shi Kanagawa JAPAN
Simulation models contain many parameters that must be adjusted (calibrated) in advance to reduce the error between simulations and experimental results. Bayesian optimization is often applied to minimize error after ... 详细信息
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Approximated EM Algorithms for Estimation of Unknown Coded Discrete memoryless Channels
Approximated EM Algorithms for Estimation of Unknown Coded D...
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GLOBECOM 2020 - 2020 IEEE Global Communications Conference
作者: Naoaki Kokubun Daiki Watanabe Hironori Uchikawa Paul H. Siegel University of California San Diego La Jolla USA Institute of Memory Technology Research & Development Kioxia Corporation Japan
Mismatch between the true channel and the channel assumed in the design of a communication system can degrade system performance. Joint channel estimation and data recovery via the Expectation-Maximization (EM) algori... 详细信息
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Corrigendum: "Analysis of hot carrier instability in a floating body cell" [Jpn. J. Appl. Phys. 63, 094002 (2024)]
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Japanese Journal of Applied Physics 2024年 第11期63卷 119301-119301页
作者: Hiroomi Nakajima Tomoaki Shino Hironobu Furuhashi Jun Nishimura Tomoki Higashi Katsuyuki Fujita Kosuke Hatsuda Ryo Fukuda Takeshi Kajiyama Memory Development Strategy Group2 Memory Development Strategy Division KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan File Memory Device Peripheral Element Development Group File Memory Device Engineering Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Advanced Memory Development Center KIOXIA Corporation 800 Yamanoissiki-Cho Yokkaichi Mie-Pref. 510-0906 Japan Memory Device Engineering Department KIOXIA Systems Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa-Pref. 247-8585 Japan Circuit Technology Research Department AI & System Research Center Frontier Technology R&D Institute KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan Memory Design Group 4 Memory Design Department 2 Memory Design Managing Department KIOXIA Corporation 2-5-1 Kasama Sakae-ku Yokohama Kanagawa Pref. 247-8585 Japan
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Neural Correlates of Perceiving Animacy in Robotic Objects
Research Square
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research Square 2024年
作者: Yizhar, Or Maimon, Amber Tal, Zohar Wald, Iddo Yehoshua Erel, Hadas Friedman, Doron Zuckerman, Oren Amedi, Amir The Baruch Ivcher Institute for Brain Cognition and Technology Baruch Ivcher School of Psychology Reichman University Herzliya Israel Max Planck Institute for Human Development Research Group Adaptive Memory and Decision Making Germany Berlin Germany Computational Psychiatry and Neurotechnology Lab Department of Brain and Cognitive Sciences Ben Gurion University Be’er Sheva Israel Digital Media Lab Department of Mathematics and Computer Science University of Bremen Bremen Germany Proaction Laboratory Faculty of Psychology and Educational Sciences University of Coimbra Coimbra Portugal Media Innovation Lab Sammy Ofer School of Communications Reichman University Herzliya Israel Advanced Reality Lab Sammy Ofer School of Communications Reichman University Herzliya Israel
The prevalence of robots in modern society calls for gaining a fundamental understanding of the underlying principles of human-robot interaction. In particular, we need to understand how people perceive robots and how... 详细信息
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Formation of High Reliability Hydrogen-free MONOS Cells Using Deuterated Ammonia
Formation of High Reliability Hydrogen-free MONOS Cells Usin...
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International Electron Devices Meeting (IEDM)
作者: Masaki Noguchi Tatsunori Isogai Hiroyuki Yamashita Keiichi Sawa Ryota Fujitsuka Takanori Yamanaka Shunsuke Okada Tomonori Aoyama Fumiki Aiso Junko Abe Yoshihiro Ogawa Seiji Nakagawa Hideshi Miyajima Advanced Memory Development Center Kioxia Corporation Mie Japan Institute of Memory Technology Research and Development Kioxia Corporation Mie Japan
For high reliability non-volatile memory cell dielectrics, hydrogen-free deuterated charge-trap SiN and tunnel SiON films are demonstrated. By using deuterated ammonia instead of ammonia as nitridation species in ALD ...
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Future of Non-Volatile memory -From Storage to Computing-
Future of Non-Volatile Memory -From Storage to Computing-
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International Electron Devices Meeting (IEDM)
作者: K. Ishimaru Institute of Memory Technology Research and Development Kioxia Corporation Yokkaichi Mie Japan
More than thirty years passed since the first NAND flash memory was presented at the IEDM. The NAND flash memory expanded its market and application by reducing the cost per bit ($/GB) and this advancement will contin...
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High Performance In-Zn-O FET with High On-current and Ultralow (<10−20 A/μm) Off-state Leakage Current for Si CMOS BEOL Application
High Performance In-Zn-O FET with High On-current and Ultral...
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International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
作者: Nobuyoshi Saito Tomoaki Sawabe Junji Kataoka Tomomasa Ueda Tsutomu Tezuka Keiji Ikeda Institute of Memory Technology Research & Development Toshiba Memory Corporation Saiwai-ku Kawasaki Kanagawa 212-0058 Japan
We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with... 详细信息
来源: 评论