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检索条件"机构=Institute of Microelectronic Circuit and System"
12 条 记 录,以下是1-10 订阅
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Design and modeling of reconfigurable MEMS low pass filter
Design and modeling of reconfigurable MEMS low pass filter
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ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated circuit Technology
作者: Cai, Miao Guo, Xing-Long Li, Yong Liu, Lei Zong-sheng, Lai Institute of Microelectronic Circuit and System East China Normal University Shanghai 200062 China
This paper presents the design and modeling of a unit cell for reconfigurable microwave microelectro-mechanical systems (MEMS) low pass filters (LPF), with reconfigurable inductance and capacitance. Lumped elements ar... 详细信息
来源: 评论
A 15 GHz CMOS low phase noise VCO using coupled coplanar waveguide
A 15 GHz CMOS low phase noise VCO using coupled coplanar wav...
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IEEE International Conference on Computer Research and Development
作者: Huang, Long Yuan, Shengyue Zhang, Runxi Li, Wei Institute of Microelectronic Circuit and System East China Normal University Shanghai 200062 China State Key Laboratory of ASIC and System Fudan University Shanghai 201203 China
A 15 GHz voltage-controlled-oscillator (VCO) with coupled coplanar waveguide (CCPW) inductor for LC resonator is proposed in this work. Methods including optimization of varactors and CCPW are applied to minimize the ... 详细信息
来源: 评论
Design and Modeling of Reconfigurable MEMS Low Pass Filter
Design and Modeling of Reconfigurable MEMS Low Pass Filter
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2006 8th International Conference on Solid-State and Integrated circuit Technology
作者: Miao Cai Xing-long Guo Yong Li Lei Liu Zong-sheng Lai Institute of Microelectronic Circuit and System East China Normal University
This paper presents the design and modeling of a unit cell for reconfigurable microwave microelectromechanical systems(MEMS) low pass filters(LPF), with reconfigurable inductance and *** elements are introduced here t... 详细信息
来源: 评论
Impact of gate length on the electrical characteristics of junctionless FDSOI strained SiGe channel p-FinFET
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Journal of Materials Science: Materials in Electronics 2025年 第15期36卷
作者: Lin, Hongxiao Miao, Yuanhao Ren, Yuhui Zhang, Yongkui Zhang, Qingzhu Xiong, Wenjuan Yu, Jiahan Zhao, Xuewei Liang, Renrong Xu, Jun Ye, Tianchun Radamson, Henry H. Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China School of Microelectronics University of Chinese Academy of Sciences Beijing100049 China School of Integrated Circuits Tsinghua University Beijing100086 China
In this work, we present the influence of structure design on the performance of novel fully depleted silicon-on-insulator (FDSOI) SiGe p-type FinFETs. The effects of Ge content, strain in the epitaxial SiGe channel a... 详细信息
来源: 评论
A high linearity CMOS up-conversion mixer for UHF RFID reader application
A high linearity CMOS up-conversion mixer for UHF RFID reade...
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International Conference on Solid-State and Integrated circuit Technology
作者: Jianhang Fan Chunqi Shi Runxi Zhang Institute of Microelectronic Circuit & System East China Normal University Shanghai China
A high-linearity double-quadrature direct up-conversion mixer implemented by IBM 0.18μm CMOS process is presented. The mixer is designed based on Gilbert cell with degeneration resistors which can improve its lineari... 详细信息
来源: 评论
A Q-band CMOS LNA with common source topology based on algorithmic design methodologies
A Q-band CMOS LNA with common source topology based on algor...
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International Conference on Solid-State and Integrated circuit Technology
作者: Sheng Chen Runxi Zhang Chunqi Shi Yanlin Shi Zongsheng Lai Institute of MicroelEctronic Circuit System East China Normal University Shanghai CHINA
This work presents a low-noise amplifier (LNA), based on algorithmic design methodologies in 0.13μm technology. Spiral inductors were used in the on-chip impedance matching networks, rather than transmission lines. T... 详细信息
来源: 评论
A 2.4GHz monolithic SiGe power amplifier for Wireless-LAN transceiver
A 2.4GHz monolithic SiGe power amplifier for Wireless-LAN tr...
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2nd Asia Pacific Conference on Postgraduate Research in microelectronics and Electronics, PrimeAsia 2010
作者: Ruan, Ying Chen, Lei Liu, Yan-Hua Ran, Feng Lai, Zong-Sheng Institute of Microelectronic Circuit and System East China Normal University Shanghai China Faculty of Computer and Information Engineering Shanghai University of Electric Power Shanghai China Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China
A high-linearity power amplifier (PA) for 2.4GHz Wireless-LAN transceiver is presented. The PA is designed and implemented using a 0.18um SiGe BiCMOS process. An on-chip adaptive linearizer is comprised of a base-emit... 详细信息
来源: 评论
Design and modeling of reconfigurable MEMS low pass filter
Design and modeling of reconfigurable MEMS low pass filter
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International Conference on Solid-State and Integrated circuit Technology
作者: Miao Cai Xing-long Guo Yong Li Lei Liu Zong-sheng Lai Institute of Microelectronic Circuit and System East China Jiao Tong University Shanghai China
This paper presents the design and modeling of a unit cell for reconfigurable microwave microelectromechanical systems (MEMS) low pass filters (LPF), with reconfigurable inductance and capacitance. Lumped elements are... 详细信息
来源: 评论
The Impact Of Technology Parameters On The Performance Of Common-gate LNAs
The Impact Of Technology Parameters On The Performance Of Co...
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International Conference on Mixed Design of Integrated circuits and systems (MIXDES)
作者: T. Stucke N. Christoffers R. Kokozinski S. Kolnsberg B.J. Hosticka Department of Circuit Design and Wireless Systems SDS Fraunhofer Institute of Microelectronic Circuits and System Duisburg Germany Department Signal Processing and System Design SYS the same Institute Germany
In this paper the impact of short channel effects on the performance of common-gate LNAs (CG-LNAs) is presented. It based on the modeling the MOSFET behavior including its intrinsic and extrinsic parasitics in all pos... 详细信息
来源: 评论
A monolithic SiGe BiCMOS power amplifier for UHF RFID application
A monolithic SiGe BiCMOS power amplifier for UHF RFID applic...
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11th International Conference on Wireless Communications, Networking and Mobile Computing (WiCOM 2015)
作者: Ying Ruan Lei Chen Guang Zhong Faculty of Electronics & Information Engineering Shanghai University of Electric Power China Institute of Microelectronic Circuit & System East China Normal University Shanghai China
A monolithic power amplifier (PA) is designed and implemented for UHF RFID Reader. The presented PA is based on a 0.18 um SiGe BiCMOS process and its working frequency band is from 860 MHz to 960 MHz. It is a linear c... 详细信息
来源: 评论