A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS *** presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage ...
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A fully integrated high-linearity power amplifier targeting 5.5GHz is implemented in 0.35μm SiGe BiCMOS *** presented power amplifier schematic has a two-stage single-ended common-emitter structure with 3.3V voltage supply. The measured maximum output power can reach 16.52dBm,and the PAE is 17.45%at P1dB.
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