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Thermal engineering in ALD-grown ZGO thin films for high-performance photodetectors

材料科学技术（英文版） 2025年第6期209卷 19-26页

作者： Si-Tong Ding Yu-Chang Chen Cai-Yu Shi Lei Shen Qiu-Jun Yu Lang-Xi Ou Ze-Yu Gu Na Chen Ting-Yun Wang David Wei Zhang Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai Institute Communication and Data ScienceShanghai UniversityShanghai 200444China State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innovation Center Shanghai 201203China National Integrated Circuit Innovation Center Shanghai 201203China Jiashan Fudan Institute Jiaxing 314100China

Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet *** order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped *** this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen *** results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after ***,metal-semiconductor-metal PDs were prepared based on the studied ZGO *** responsivity(R),detectivity(D*),and external quantum efficiency(EQE)of the optimized device are 61.8 A W-1,1.2 x 1012 Jones,and 255.9％,*** to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in *** thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet *** it also broadens the application of ternary metal oxides in optoelectronics.

关键词： Atomic layer deposition Oxygen annealing ZGO thin films Photodetector Ultraviolet detection

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A Valuable and Low-Budget Process Scheme of Equivalized 1 nm Technology Node Based on 2D Materials

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Nano-Micro Letters 2025年第8期17卷 294-305页

作者： Yang Shen Zhejia Zhang Zhujun Yao Mengge Jin Jintian Gao Yuhan Zhao Wenzhong Bao Yabin Sun He Tian College of Integrated Circuit Science and Engineering Shanghai Key Laboratory of Multidimensional Information ProcessingEast China Normal UniversityShanghai 200241People’s Republic of China Institute of Microelectronics and Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua UniversityBeijing 100084People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China Shaoxin Laboratory Shaoxing 312000People’s Republic of China

Emerging two-dimensional(2D)semiconductors are among the most promising materials for ultra-scaled transistors due to their intrinsic atomic-level *** the stacking process advances,the complexity and cost of nanosheet field-effect transistors(NSFETs)and complementary FET(CFET)continue to *** 1 nm technology node is going to be based on Si-CFET process according to international roadmap for devices and systems(IRDS)(2022,https://***/),but not publicly confirmed,indicating that more possibilities still *** miniaturization advantage of 2D semiconductors motivates us to explore their potential for reducing process costs while matching the performance of next-generation nodes in terms of area,power consumption and *** this study,a comprehensive framework is built.A set of MoS2 NSFETs were designed and fabricated to extract the key parameters and *** then for benchmarking,the sizes of 2D-NSFET are scaled to a extent that both of the Si-CFET and 2D-NSFET have the same average device *** these conditions,the frequency of ultra-scaled 2D-NSFET is found to improve by 36%at a fixed power *** work verifies the feasibility of replacing silicon-based CFETs of 1 nm node with 2D-NSFETs and proposes a 2D technology solution for 1 nm nodes,i.e.,“2D eq 1 nm”*** the same time,thanks to the lower characteristic length of 2D semiconductors,the miniaturized 2D-NSFET achieves a 28%frequency increase at a fixed power ***,developing a standard cell library,these devices obtain a similar trend in 16-bit RISC-V *** work quantifies and highlights the advantages of 2D semiconductors in advanced nodes,offering new possibilities for the application of 2D semiconductors in high-speed and low-power integrated circuits.

关键词： Two-dimensional semiconductors 1 nm technology node Nanosheet field-effect transistors Complementary field-effect transistors Horizontal scaling

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A fully monolithic 0.18 μm SiGe BiCMOS power amplifier design

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Journal of Semiconductors 2011年第5期32卷 99-103页

作者：陈磊阮颖苏杰张书霖石春琦赖宗声 Institute of Microelectronics Circuit & System East China Normal University

A fully monolithic power amplifier （PA） for multi-mode front end IC integration is presented. The PA is fabricated in an IBM 7WL 0.18 μm SiGe BiCMOS process with all the matching networks integrated on a chip. After load-pull test to find the best power stage size and layout optimization, the measured results show that the PA can obtain a 24 dBm maximum output power at 2.4 GHz, the output 1 dB compression point is 21 dBm at 5 dBm input, and the PAE is 18%. This PA is complete on-chip tested without any bonding wires and on-board matching, targeting fully power module integration in multi-mode system on chip.

关键词： SiGe BiCMOS power amplifier monolithic multi-mode

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A 2.1-6 GHz SiGe BiCMOS low-noise amplifier design for a multi-mode wideband receiver

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Journal of Semiconductors 2010年第5期31卷 69-72页

作者：陈磊阮颖马和良赖宗声 Institute of Microelectronics Circuit & System East China Normal University

A wideband low-noise amplifier（LNA） with ESD protection for a multi-mode receiver is *** LNA is fabricated in a 0.18-μm SiGe BiCMOS process,covering the 2.1 to 6 GHz frequency *** optimized noise modeling and circuit design,the measured results show that the LNA has a 12 dB gain over the entire bandwidth, the input third intercept point（IIP3） is -8 dBm at 6 GHz,and the noise figure is from 2.3 to 3.8 dB in the operating *** overall power consumption is 8 mW at 2.5 V voltage supply.

关键词： SiGe BiCMOS low- noise-amplifier wideband electrostatic discharge

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Design and fabrication of miniature antenna based on silicon substrate for wireless communications

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Science in China(Series F) 2008年第5期51卷 586-591页

作者： GUO XingLong JIN Yan LIU Lei OUYANG WeiXia LAI ZongSheng Institute of Microelectronics Circuit & System East China Normal University Shanghai 200062 China

In this paper, a novel compact CPW-fed slot small antenna was designed and fabricated on high-resistivity silicon （HR-Si） by micro-electronics process. The results of simulation are consistent with results of measurement for the antenna. The mode of the antenna is vertical and horizontal bidirectional radiations. The gain of antenna is 2.5 dB, and the resonance frequency approximately is 3 GHz. This fabrication can be compatible with antenna integration and CMOS process. The parameters of this antenna are for reference radar antenna system of Unmanned Aerial Vehicles （UAV）, satellite transmission, and communication.

关键词： miniature antenna high-resistivity silicon (HR-Si) IC process

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Fast and Efficient Integration of Human Upper-Body Detection and Orientation Estimation in RGB-D Video 9

Fast and Efficient Integration of Human Upper-Body Detection...

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2017 9th IEEE International Conference on Communication Software and Networks (ICCSN 2017)

作者： Tao Ji Leibo Liu Wenping Zhu Jinghe Wei Shaojun Wei Institute of Microelectronics Tsinghua University Institute of Microelectronics China Key System & Integrated Circuit Co.Ltd

ISBN: (纸本)9781509038237;9781509038220

Automatic and accurate human upper-body detection and orientation estimation have great practical value in several computer vision applications. Most previous works on human upper-body orientation estimation assume that the human upper-body region is already detected and aligned. However, this is not the case in many real-world scenarios. Additional human detector is essential which is usually much slower than orientation estimator. In this paper, we propose a novel approach to single-frame human upper-body detection and orientation estimation in RGB-D images. Unlike previous works which address human detection and orientation estimation separately with different models, our method involves a random forest framework to approach both in a unified model. The whole algorithm, including human detection and orientation estimation, achieves 40 fps in 640 p resolution on a single laptop CPU without any GPU acceleration. The experimental results show the effectiveness of the proposed method.

关键词： RGB-D human detection human orientation estimation intergration framework random forest

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Hardware Efficient Signal Detector Based on Lanczos Method for Massive MIMO systems 9

Hardware Efficient Signal Detector Based on Lanczos Method f...

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2017 9th IEEE International Conference on Communication Software and Networks (ICCSN 2017)

作者： Yang Xue Leibo Liu Guiqiang Peng Huaibo Zhang Shouyi Yin Jinghe Wei Shaojun Wei Institute of Microelectronics Tsinghua University China Key System & Integrated Circuit Co. Ltd

ISBN: (纸本)9781509038237;9781509038220

Minimum mean square error hometd has proved its superiority for signal detection in massive multiple-input multiple-output(MIMO) systems for its near-optimal performance. However, the detection efficiency is restrained by a high computation complexity and low parallelism operation of matrix inversion. This paper presented a hardware efficient signal detector based on low complexity Lanczos Method, which replaced the matrix inversion with a series iterations of linear equation and reduce the computational complexity form() to() where denotes the number of users. According to the algorithm, a signal detector for 128 8 MIMO system is designed and implemented using TSMC 65 nm CMOS technology. The results are 0.441 Mbps/m W(throughput/power) and 206.55 Mbps/mm2(throughput/area), which are increased by 2.4× and 1.82× that of recently proposed Neumman method.

关键词： massive MIMO signal detection lanczos method VLSI architecture

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A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

A SiGe BiCMOS Class A power amplifier targeting 5.5GHz appli...

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3rd IEEE Asia Pacific Conference on Postgraduate Research in microelectronics and Electronics, PrimeAsia 2011

作者： Qiong, Yan Lin, Hua Lei, Chen Ying, Ruan Jie, Su Shulin, Zhang Wei, Zhang Shengfu, Liu Zongsheng, Lai Institute of Microelectronics Circuit and System East China Normal University Shanghai China

ISBN: (纸本)9781457716096

This paper discusses a 5.5GHz fully integrated high-linearity Class A power amplifier based on 0.18μm SiGe BiCMOS technology. According to the post simulation results, the maximum output power can reach 24.18 dBm, and the PAE is 17.42% at P1dB. The designed PA based on SiGe BiCMOS technology demonstrates a competive linearity performance compared with RF CMOS and GaAs when considering the factors of cost and process complexity. It can be used in 802.11a Wireless Local Area Network (WLAN) application. © 2011 IEEE.

关键词： Power amplifiers

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Compound sacrificial layer process for RF MEMS applications

Compound sacrificial layer process for RF MEMS applications

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2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications, MAPE 2009

作者： Zhang, Yong-Hua Wang, Chao Ouyang, Wei-Xia Lai, Zong-Sheng Institute of Microelectronics Circuit and System East China Normal University Shanghai China

ISBN: (纸本)9781424440740

Compound sacrificial layer has been developed for RF membrane bridge switch in micro electro mechanical systems (MEMS) tunable filters. The compound sacrificial layer consisting of polyimide and positive photoresist is used to avoid drawbacks which will occur when only polyimide or positive photoresist is used as sacrificial layer for suspended membrane with large area. The wet etching and dry etching are used to remove positive photoresist and polyimide, respectively. And the results of baking and etching of sacrificial layer are improved. The time is also shortened for the complete removal of sacrificial layer. ©2009 IEEE.

关键词： Polyimides

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Optimization of the phase noise of LC VCO in UHF RFID reader

Optimization of the phase noise of LC VCO in UHF RFID reader

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5th International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2009

作者： Wei, He Ping, Xu Zongsheng, Lai Institute of Microelectronics Circuit and System East China Normal University Shanghai China

ISBN: (纸本)9781424436934

A low phase noise LC voltage controlled oscillator for UHF radio frequency identification reader is presented in this paper. Symmetrical LC resonators and a low-dropout-regulator are used to suppress the noise from tail current and power supply, respectively. 3-bit switched-capacitor array for coarse tuning followed by MOS varactors for fine tuning to ensure a Low voltage controlled oscillator gain (

关键词： Variable frequency oscillators

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