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A Wideband GaN MMIC Power Amplifier Based on Non-Uniform Distributed Topology

A Wideband GaN MMIC Power Amplifier Based on Non-Uniform Dis...

2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023

作者： Hu, Aizhen Leng, Yongqing Luan, Tongyao Wu, Kai Qiu, Xin Cui, Xingli Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou450000 China

ISBN: (纸本)9798350308761

In this paper, a wideband monolithic microwave integrated circuit (MMIC) power amplifier (PA) designed in 250 nm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process is presented. The PA uses a non-uniformly distributed topology consisting of 7-stage transistors and artificial transmission lines (ATL). By adjusting impedance of transistors and ATLs can attain higher output power and higher power-added efficiency (PAE). At the same time, for purpose of enhancing the circuit stability and cut-off frequency, we have configured a parallel capacitor and resistor (RC) structure at the gate of each transistor. The simulated results of the non-distributed power amplifier (NDPA) show that within 2-18 GHz frequency band, a small signal gain of 9.8-12dB, a PAE of 16%-36%, an output power (Pout) of 34.8-37dBm. © 2023 IEEE.

关键词： MMIC Non-uniform distributed topology wideband PA

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A 2.4GHz high efficient monolithic class E power amplifier

A 2.4GHz high efficient monolithic class E power amplifier

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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Su, Jie Zhang, Shulin Chen, Lei Tian, Liang Zhou, Jin Ruan, Ying Ran, Feng Lai, Zongsheng Institute of Microelectronics Circuit and System East China Normal University Shanghai 20062 China Key Laboratory of Advanced Display and System Application ShangHai University Shanghai 20062 China

ISBN: (纸本)9781424467372

This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power amplifier achieves maximum output power of 22.4dBm. and the PAE is 33% with 2V supply. After optimizing the component parameter, the input and output terminals are both well matched to baseband and antenna respectively. With EER or ET technology this switch-mode amplifier can realize linear amplification, resulting in impressive high efficient in future communication system.

关键词： Power amplifiers

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Multiple SiGe/Si layers epitaxy and SiGe selective etching for vertically stacked DRAM

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Journal of Semiconductors 2023年第12期44卷 133-140页

作者： Zhenzhen Kong Hongxiao Lin Hailing Wang Yanpeng Song Junjie Li Xiaomeng Liu Anyan Du Yuanhao Miao Yiwen Zhang Yuhui Ren Chen Li Jiahan Yu Jinbiao Liu Jingxiong Liu Qinzhu Zhang Jianfeng Gao Huihui Li Xiangsheng Wang Junfeng Li Henry HRadamson Chao Zhao Tianchun Ye Guilei Wang Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory Technology Beijing 100176China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and SystemGuangzhou 510535China Microelectronics Institute University of Chinese Academy of SciencesBeijing 100049China Hefei National Laboratory Hefei 230088China

Fifteen periods of Si/Si_(0.7)Ge_(0.3)multilayers(MLs)with various Si Ge thicknesses are grown on a 200 mm Si substrate using reduced pressure chemical vapor deposition(RPCVD).Several methods were utilized to characterize and analyze the ML *** high resolution transmission electron microscopy(HRTEM)results show that the ML structure with 20 nm Si_(0.7)Ge_(0.3)features the best crystal quality and no defects are *** Si_(0.7)Ge_(0.3)ML structures etched by three different methods were carried out and compared,and the results show that they have different selectivities and *** this work,the fabrication process influences on Si/Si Ge MLs are studied and there are no significant effects on the Si layers,which are the channels in lateral gate all around field effect transistor(L-GAAFET)*** vertically-stacked dynamic random access memory(VS-DRAM),it is necessary to consider the dislocation caused by strain accumulation and stress release after the number of stacked layers exceeds the critical *** results pave the way for the manufacture of high-performance multivertical-stacked Si nanowires,nanosheet L-GAAFETs,and DRAM devices.

关键词： RPCVD epitaxy SiGe/Si multilayers L-GAAFETs VS-DRAM

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Fifth order low-pass transitional Gm-C filter with relaxation oscillator frequency tuning circuit

Fifth order low-pass transitional Gm-C filter with relaxatio...

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IEEE Conference on Electron Devices and Solid-State circuits

作者： T.H. Teo E.-S. Khoo D. Uday Integrared Circuit and System Laboratory Institute of Microelectronics Singapore

The design and implementation of gm-C filter with on-chip automatic tuning circuit is described. Transitional Bessel-Chebyshev filter is implemented to compromise between high attenuation and low group-delay variation. The circuit is fabricated with 0.18 /spl mu/m CMOS process with 6-metal single poly. The filter operates at a cutoff frequency of 10 MHz with a single 1.3 V supply voltage. The measurement results shows an attenuation of 70 dB at stop-band can be achieved, while keeping a low group-delay variation of less than 7 nSec up-to 1.5 times of cutoff frequency. The cutoff frequency can be linearly tuned from 4 MHz to 10 MHz through the tuning loop. By employing relaxation oscillator, accurate and robust frequency tuning scheme is implemented. Measured with sufficient samples, the frequency tuning circuit shows an cutoff frequency tuning error of less than 7.0% over wide range of supply voltages (1.3 V to 2.1 V) and operating temperatures (-40/spl deg/C to +85/spl deg/C) in the whole tuning range.

关键词： Low pass filters Oscillators circuit optimization Cutoff frequency Frequency measurement Tuning CMOS process Attenuation measurement Voltage measurement Robustness

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Design, analysis, and implementation of analog complex filter for low-IF Wireless LAN application

Design, analysis, and implementation of analog complex filte...

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International Conference on VLSI Design

作者： T.H. Teo E.-S. Khoo D. Uday C.-B. Tear Integrated Circuit and System Laboratory Institute of Microelectronics Singapore

The design and implementation of an analog complex filter for low-IF WLAN 802.11a receiver is described. An IF of 20 MHz is chosen as a trade off between image-rejection and power consumption. The specified bandwidth is 20 MHz. Baseband processing requires low group-delay variation in the received signal to meet bit error rate (BER) specification. This requires a design of high frequency, wide bandwidth and high attenuation filter. To resolve these issues, fifth-order complex transitional Bessel-Chebyshev filter is implemented to compromise between high attenuation and low group-delay variation. Measured results show the designed filter provides 30 dB to 40 dB image rejection and 18 dB adjacent channel rejection, while keeping a low group-delay variation of below 6.0 ns within the pass-band. High frequency and wide bandwidth filter also requires stringent design specification of the circuitries. Differential inverter transconductor is optimized for this continuous-time filter design. The complete filter including on-chip tuning circuit and bandgap consumes only 7.5 mA with 1.8 V single supply voltage. The circuit is fabricated using 0.18 /spl mu/m, 6-metal-single-poly CMOS process.

关键词： Wireless LAN Band pass filters Bandwidth circuits Bit error rate Frequency Attenuation Energy consumption Baseband Signal processing

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Design Study of a New Portable Thermal Anemometer 6

Design Study of a New Portable Thermal Anemometer

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6th International Conference on Communications, Information system and Computer Engineering, CISCE 2024

作者： Hu, Huaqiao Jiao, Binbin Zhao, Chengyuan Zhao, Jingxiao Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Institute of Microelectronics of the Chinese Academy Beijing China Zhengzhou Zhongke Integrated Circuit and System Application Research Institute Zhengzhou China

ISBN: (纸本)9798350353174

The objective of this study is to develop a new portable thermal anemometer that is cost-effective, highly accurate, offers a wide measurement range, and is handheld. Utilizing Computational Fluid Dynamics (CFD), this research designs a portable anemometer housing equipped with an innovative shunt structure. It further analyzes the influence of key structural parameters of the sampling flow channel - namely, the length of the flat section, the diameter of the round tube, and the cross-section ratio - on the device's performance. A control circuit is then tailored according to system requirements, and the final assembly of the anemometer is accomplished using 3D printing and PCB technologies. Simulation and experimental results demonstrate that this anemometer substantially reduces the wind speed across the surface of the flow sensor chip while maintaining laminar flow conditions throughout the test range, thereby significantly expanding the test range. © 2024 IEEE.

关键词： Computational fluid dynamics

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Design of Thermal Conductivity Gas Sensor with Silicon Cap 16

Design of Thermal Conductivity Gas Sensor with Silicon Cap

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16th IEEE International Conference on Electronic Measurement and Instruments, ICEMI 2023

作者： Wang, Changchun Jiao, Binbin Liu, Xin Zhao, Chengyuan Wu, Gangqiang Liu, Ruiwen Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Institute of Microelectronics Chinese Academy of Sciences Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

ISBN: (纸本)9798350327144

This paper presents the design of a suspended micro hotplate-based thermal conductivity gas sensor. A rectangular silicon cap is packaged above the micro hotplate, creating a 20μm air gap. This design increases the proportion of heat dissipation through gaseous thermal conduction in the total heat dissipation of the chip, significantly improving the sensitivity of gas detection. By comparing the differences in total thermal conductivity between the chip with the cap and without it, it can be observed that gas conduction, directly related to gas concentration, constitutes more than 91% of the total thermal conductivity. Through evaluations conducted on a mixture of nitrogen gas with SF6 and H2, the chip with the silicon cap demonstrated effective detection of changes in SF6 at 200ppm and H2 at 50ppm. © 2023 IEEE.

关键词： Silicon

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Gm-C complex transitional filter for low-IF wireless LAN application

Gm-C complex transitional filter for low-IF wireless LAN app...

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International Conference on microelectronics, ICM

作者： T.H. Teo E.-S. Khoo D. Uday Integrated Circuit and System Laboratory Institute of Microelectronics Singapore

The design and implementation of a gm-C complex filter for low-IF WLAN is described. Fifth-order transitional complex Bessel-Chebyshev filter is implemented to compromise between high attenuation and low group-delay variation. The circuit is fabricated using 0.18 /spl mu/m CMOS process. Measured results show that the filter provides 30 dB to 40 dB image rejection and 18 dB adjacent channel rejection, while keeping a low group-delay variation of below 6.0ns within the pass-band. High frequency and wide bandwidth filter also requires stringent design specification of the circuitries. Differential inverter transconductor is optimized for this gm-C continuous-time filter design. The complete filter including on-chip tuning circuit and bandgap consumes only 7.5 mA with 1.8 V single supply voltage.

关键词： Wireless LAN Band pass filters circuits Attenuation CMOS process Frequency Bandwidth Inverters Transconductors Design optimization

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A low-noise differential CMOS VCO design in Zero-IF dual-bands 802.11 a/b/g WLAN application

A low-noise differential CMOS VCO design in Zero-IF dual-ban...

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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Lei Chen Tian Liang Zongsheng Lai Institute of Microelectronics Circuit & system East China Jiao Tong University Shanghai China Institute of Microelectronics Circuit & System East China Normal University Shanghai China

A low noise differential CMOS VCO (voltage control oscillator) design is presented in zero-IF, dual-bands 802.11a/b/g dual-bands WLAN (wireless local area network) application. The VCO is designed to operate at 3.846 GHz as first down-conversion stage local oscillator in dual-bands WLAN receiver, whose noise is dominant to overall system noise performance. Based on noise compressing, filtering technology and low-noise layout deign, the VCO is fabricated in 0.18um RFCMOS 1P6M process and has a measured phase noise of - 116.19dBc/Hz@1MHz, which can well fit the 802.11a/b/g standard requirements. The VCO achieves a tuning range of 590MHz and draws 4mA current from 2.5V power supply. Total die area with guard ring is 600¿m ×700¿m.

关键词： Voltage-controlled oscillators Dual band Wireless LAN Local oscillators Phase noise Voltage control Filtering Noise measurement Phase measurement Measurement standards

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A Stack-Mode Dual-Band Voltage-Controlled Oscillator for Multistandard Wireless Applications

A Stack-Mode Dual-Band Voltage-Controlled Oscillator for Mul...

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2006 8th International Conference on Solid-State and Integrated circuit Technology

作者： Yong Li Yi-Ou Jing Yi-Hao Shen Zong-Sheng Lai Institute of Microelectronics Circuit and System East China Normal University

ISBN: (纸本)1424401607

A stack-mode dual-band VCO,which can be applied to 802.11a/b/g and Bluetooth multi-standard zero-IF transceiver,is proposed with low power consumption of 12.22 mW and excellent phase noise performance of-126.2 and -120.1 dBc/Hz at 1MHz offset from 2.44 and 5.23-GHz *** simulation is performed in Agilent ADS and this circuit with chip area of 1.18×0.67mm will be implemented by 0.18-μm CMOS process.

关键词： VCO A Stack-Mode Dual-Band Voltage-Controlled Oscillator for Multistandard Wireless Applications

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