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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Liang Tian Jin Zhou Aibo Huang Ying Ruan Lei Chen Zongsheng Lai Institute of Microelectronics Circuit & System East China Jiao Tong University Shanghai China Institute of Microelectronics Circuit & System East China Normal University China

A high linearity power amplifier (PA) is demonstrated for wireless communications at 2.4 GHz and is implemented in a 0.18 ¿m silicon germanium (SiGe) BiCMOS process. This PA is composed of two stages and achieves a good performance on linearity: when the input power is 0 dBm, the output 1 dB compression point (OP1 dB) is 20.3 dBm, which is only about 0.7 dBm less than the output power. The layout area of this PA is 1.1×1.3 mm 2 .

关键词： Linearity Silicon germanium Germanium silicon alloys BiCMOS integrated circuits High power amplifiers Wireless communication Heterojunction bipolar transistors CMOS technology Radio frequency Power amplifiers

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A 0.18μm CMOS LNA for UHF-RFID Reader Application

A 0.18μm CMOS LNA for UHF-RFID Reader Application

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2006 8th International Conference on Solid-State and Integrated circuit Technology

作者： Yuan-ying Chen Run-xi Zhang Chun-qi Shi Zong-sheng Lai Institute of Microelectronics Circuit & System East China Normal University

CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband ***,CMOS LNA is gaining its popularity from applications such as GSM,PCS,and *** this paper,a novel low power consumption and high gain LNA for UHF-RFID(ultra high frequency-radio frequency identification) reader is *** analysis is introduced using those equations *** these analyses,the stack style single-end structure with LC resonator using on-chip spiral inductor is *** LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing lmA current from 1.8V supply voltage under TSMC 0.18μm RF-CMOS *** reverse isolation is about -36.7 dB.

关键词： CMOS LNA UHF-RFID

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A Reconfigurable RF MEMS Low-Pass Filter,Based on CPW Periodic Structures

A Reconfigurable RF MEMS Low-Pass Filter,Based on CPW Period...

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2008 9th International Conference on Solid-State and Integrated-circuit Technology

作者： Wei-xia Ou-yang Xing-long Guo Chao Wang Yong-hua Zhang Zong-sheng Lai Institute of Microelectronics Circuit and System East China Normal University

This paper addresses the design and the realization of millimeter wave tunable filters using multiple-contact MEMS *** two unit cell filter based on slow-wave coplanar waveguide(CPW) periodic structure are reconfigured into a self-similar single unit cell by the operation of MEMS switches with single *** 3-dB cutoff frequency of the low-pass filter was shifted from 12.5GHz to 6.1GHz,which exliibits excellent performance on small size,low insertion loss and is compatible with monolithic microwave integrated circuit *** tested results show that the pass-band ripple is less than 0.5dB and the out-of-band rejection is better than *** driven voltages of the switches are around 25V.

关键词： CPW A Reconfigurable RF MEMS Low-Pass Filter,Based on CPW Periodic Structures Filter

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A novel tunable low-pass filter based on MEMS and CPW

A novel tunable low-pass filter based on MEMS and CPW

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9th International Conference on Electronic Measurement and Instruments, ICEMI 2009

作者： Wang, Chao Guo, Xing-Long Ou-Yang, Wei-Xia Zhang, Yong-Hua Lai, Zong-Sheng Institute of Microelectronics Circuit and System East China Normal University Shanghai 200062 China Engineering Research Center for Nanophotonics and Advanced Instrument Ministry of Education Shanghai 20062 China

ISBN: (纸本)9781424438624

This paper presents a new type of tunable low-pass filter for millimeter-waves. The filter is based on the slow-wave coplanar waveguide (CPW) lines and tuned by the MEMS capacitive shunt switches. There are 5 switches which can provide two orders of tunable mode. In the first order tuning, the 3dB cut-off frequency changes from 8.2GHz to 10.5GHz, and the second order tuning is 8.2GHz to 16.8GHz. The tested results show that the pass-band ripple is less than 2dB and the maximal out-of-band rejection is better than 20dB. The driven voltages of the switches are around 40V. ©2009 IEEE.

关键词： Coplanar waveguides

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A CMOS Transmitter Front-End for Mobile UHF RFID Reader

A CMOS Transmitter Front-End for Mobile UHF RFID Reader

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International Conference on Wireless Communications, Networking and Mobile Computing (WiCom)

作者： Ping Xu Wei He Zongsheng Lai Institute of Microelectronics Circuit & System East China Jiao Tong University Shanghai China Institute of Microelectronics Circuit & System East China Normal University Shanghai China

This paper describes a 900 MHz CMOS transmitter front-end for mobile UHF RFID reader including an I/Q up-mixer for frequency translation from IF to RF and a driver amplifier for signal pre-amplification. The proposed up-mixer can realize all the three modulation schemes specified in EPC Global C1G2 protocol. The driver amplifier can offer a seven-class adjustable conversion gain through a 3-bit gate bias control. Fabricated in IBM 0.18 mum CMOS process, the transmitter frontend consumes a minimum current of 14 mA from a 1.8 V power supply. The experimental results show that the up-mixer achieves -4.9 dBV rms IIP3, 3.18 dB conversion gain and 13.20 dB NF, and the DA features 13.5 dBm OIP3 at 50 Omega, 7.90-16.30 dB conversion gain variation and 3.10-5.00 dB NF range.

关键词： Transmitters Radiofrequency identification Driver circuits Radiofrequency amplifiers Gain Noise measurement Radio frequency RF signals Protocols CMOS process

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Miniature and tunable filters with MEMS switches

Miniature and tunable filters with MEMS switches

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IEEE International Nanoelectronics Conference (INEC)

作者： Xinglong Guo Yan Jin Lei Liu Weixia Ou'yang Zongsheng Lai Institute of Microelectronics Circuit & System East China Jiao Tong University Shanghai China Institute of Microelectronics Circuit & System East China Normal University Shanghai China

In this paper, fully monolithic tunable millimeter-wave filters with tapped-line feedings are proposed using the CPW-based periodic structures with novel multiple-contact MEMS switches. Millimeter-wave low-pass were designed, fabricated, and tested. The cascaded CPW-based periodic structures, with low-pass intrinsic filtering characteristics, are reconfigured into a self-similar single unit cell by the operation of the novel multiple-contact MEMS switches with single actuation. The measured results of the reconfigurable low-pass filter show the 3-dB cutoff frequency change from 19 to 11 GHz with very small change in the average insertion loss from 1.3 to 1.9 dB. The chip size of the low-pass is 4.0 mm times 1.6 mm.

关键词： Low pass filters Microwave filters Band pass filters Filter bank Contacts Filtering theory Transmission line measurements

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A reconfigurable routing method for fault-tolerant mesh-based network on chip

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Journal of Information and Computational Science 2013年第1期10卷 157-165页

作者： Liu, Yanhua Ruan, Ying Lai, Zongsheng Sun, Ling Institute of Microelectronics Circuit and System East China Normal University Shanghai 200241 China Jiangsu Provincial Key Lab. of ASIC Design Nantong University Nantong 226019 China State Key Laboratory of Computer Architecture Institute of Computing Technology Chinese Academy of Sciences Beijing 100190 China

As the semiconductor industry advances to nano-technology points, Network on Chip (NoC) components are becoming vulnerable to errors during the system operation. Consequently, fault-tolerant techniques for NoC are needed to achieve high reliability. In this paper, we present a fault-tolerant routing method to tolerate faulty routers in a two-dimension (2D) mesh-based NoC. With this method, the system can have a multi-router fault-tolerant capability and the routing path can be dynamically reconfigured to support different situations caused by faulty routers in NoC. Fault-tolerance capability and system performance of the proposed method are evaluated through analysis and simulations. Theoretical analysis and simulation results show that the proposed method can enhance the reliability of system and offer considerable fault-tolerance capability. © 2013 by Binary Information Press.

关键词： Network-on-chip

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A 7-13GHz Compact GaN MMIC Power Amplifier with High-Efficiency

A 7-13GHz Compact GaN MMIC Power Amplifier with High-Efficie...

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2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023

作者： Wu, Kai Leng, Yongqing Hu, Aizhen Li, Qiqi Qiu, Xin Jing, Youbo Henan Institute of Advanced Technology Zhengzhou University Zhengzhou450001 China Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou450000 China

ISBN: (纸本)9798350308761

This paper proposes an ultra-broadband high-efficiency power amplifier (PA) designed in WIN 0.25-μm GaN HEMT process. In order to achieve high gain, the PA adopts a two-stage structure. In particular, for expanding bandwidth, the PA adopts a broadband matching network based on Chebyshev low-pass filtering structure. The simulation results show that in continuous wave (CW) mode, within the bandwidth of 713GHz, the output power is 39.5dBm40.7dBm, the PAE is 36%42%, and the gain is 14.5dB15.5dB. The average power density of the PA is 1.63 W/mm2 and the circuit area is 1.8*3.6 mm © 2023 IEEE.

关键词： GaN high-efficiency MMIC power amplifier ultra-wideband

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A 6-18 GHz High Power-Handling Switch in GaN Technology

A 6-18 GHz High Power-Handling Switch in GaN Technology

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2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications, IMWS-AMP 2023

作者： Li, Qiqi Leng, Yongqing Qiu, Xin Wang, Zhengjia Wu, Kai Jing, Youbo Henan Institute of Advanced Technology Zhengzhou University Zhengzhou450001 China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou450000 China Institute of Microelectronics of the Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350308761

In this paper, based on the basic working principle and design method of the switching device, a 6-18 GHz high-power single-pole double-throw (SPDT) switch is designed using the 0.25 μm GaN technology, and its layout simulation results are given. The switch adopts a series-parallel symmetrical structure to improve the working bandwidth, and the isolation of the switching circuit is improved by forming a resonance between the parallel inductance and the off-state capacitance of the transistor. The designed switch has a total area of 1.9*2.4mm 2 and has good RF performance. In the frequency band of 6-18 GHz, the insertion loss is less than 1.2 dB, the isolation is greater than 25 dB, and the input 1 dB compression power is 42.8 dBm at 10 GHz. © 2023 IEEE.

关键词： GaN high power MMIC SPDT switch

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Design of a wideband and low phase noise LC VCO

Design of a wideband and low phase noise LC VCO

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2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology

作者： Xu, Shuai He, Wei Shi, Chunqi Zhang, Runxi Ma, Cong Lai, Zongsheng Institute of Microelectronics Circuit and System East China Normal University Shanghai 200062 China Engineering Research Center for Nanophotonics and Advanced Instrument Ministry of Education ECNU Shanghai 200062 China

ISBN: (纸本)9781424457984

In this paper, a 3.18∼4.258GHz wideband and low phase noise LC VCO is proposed. Three binary-weighted switching capacitors are exploited to expand the bandwidth;On-chip LDO is utilized to suppress noise from power supply. Symmetrical noise filtering technique is used to suppress thermal noise from tail current and parasitic resistors of bonding wires. The circuit is implemented with 0.13μm RF CMOS process. The frequency tuning range is from 3.18GHz to 4.258GHz and phase noise is -120dBc/Hz at 1MHz offset from 4.258GHz carrier. The Figure of Merit (FOM) is -181dB/Hz and maximum power consumption is 12.5mW. ©2010 IEEE.

关键词： Variable frequency oscillators

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