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Design of a Wideband and Low Phase Noise LC VCO

Design of a Wideband and Low Phase Noise LC VCO

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2010 10th IEEE International Conference on Solid-State and Integrated circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Chunqi Shi Cong Ma Wei He Shuai Xu Runxi Zhang Zongsheng Lai Institute of Microelectronics Circuit & System East China Normal University Shanghai 200062CHN Institute of Microelectronics Circuit & System East China Normal University Shanghai 200062CHN E

In this paper, a 3.18~4.258GHz wideband and low phase noise LC VCO is proposed. Three binary-weighted switching capacitors are exploited to expand the bandwidth;On-chip LDO is utilized to suppress noise from power supply. Symmetrical noise filtering technique is used to suppress thermal noise from tail current and parasitic resistors of bonding wires. The circuit is implemented with 0.13μm RF CMOS process. The frequency tuning range is from 3.18GHz to 4.258GHz and phase noise is -120dBc/Hz at 1MHz offset from 4.258GHz carrier. The Figure of Merit (FOM) is -181dB/Hz and maximum power consumption is 12.5mW.

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A Novel Tunable Low-pass Filter Based on MEMS and CPW

A Novel Tunable Low-pass Filter Based on MEMS and CPW

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2009 9th International Conference on Electronic Measurement & Instruments(第九届电子测量与仪器国际会议 ICEMI'2009)

作者： Chao Wang Wei-xia OU-YANG Yong-hua Zhang Xing-long Guo Zong-sheng Lai Institute of Microelectronics Circuit & System East China Normal UniversityShanghai200062 China Institute of Microelectronics Circuit & System East China Normal UniversityShanghai200062 China En

ISBN: (纸本)9781424438631

This paper presents a new type of tunable low-pass filter for millimeter-waves. The filter is based on the slow-wave coplanar waveguide (CPW) lines and tuned by the MEMS capacitive shunt switches. There are 5 switches which can provide two orders of tunable mode. In the first order tuning, the 3dB cutoff frequency changes from 8.2GHz to 10.5GHz, and the second order tuning is 8.2GHz to 16.8GHz. The tested results show that the pass-band ripple is less than 2dB and the maximal out-of-band rejection is better than 20dB. The driven voltages of the switches are around 40V.

关键词： Tunable low-pass filter RF MEMS switches CPW.

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A SiGe BiCMOS Class A power amplifier targeting 5.5GHz application

A SiGe BiCMOS Class A power amplifier targeting 5.5GHz appli...

引用

Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Yan Qiong Hua Lin Chen Lei Ruan Ying Su Jie Zhang Shulin Zhang Wei Liu Shengfu Lai Zongsheng Institute of Microelectronics Circuit & System East China Normal University Shanghai China

This paper discusses a 5.5GHz fully integrated high-linearity Class A power amplifier based on 0.18μm SiGe BiCMOS technology. According to the post simulation results, the maximum output power can reach 24.18 dBm, and the PAE is 17.42% at P 1dB . The designed PA based on SiGe BiCMOS technology demonstrates a competive linearity performance compared with RF CMOS and GaAs when considering the factors of cost and process complexity. It can be used in 802.11a Wireless Local Area Network (WLAN) application.

关键词： Silicon germanium Power amplifiers BiCMOS integrated circuits Radio frequency CMOS integrated circuits Heterojunction bipolar transistors Gallium arsenide

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A power-efficient 4∶1 dynamic frequency divider with periodical injection technique

A power-efficient 4∶1 dynamic frequency divider with period...

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International Conference on Solid-State and Integrated circuit Technology

作者： Yiyu Yan Baobao Liu Runxi Zhang Chunqi Shi Yanfang Ding Zongsheng Lai Institute of Microelectronics Circuit and System East China Normal University Shanghai China

ISBN: (纸本)9781479932849

A dynamic 4:1 divider suitable for mm-wave frequency synthesizers is presented. Periodical injection technique is utilized to improve high frequency performance of the divider. The center frequency of the divider can be tuned through biasing to cover wide locking range. Simulation results show that the division frequency is improved 3 GHz with the proposed periodical injection technique. The maximum operating frequency extends to 29 GHz while the minimum is 7 GHz for 0.13 um CMOS technology. The 4:1 divider is power efficient which consumes 12mW excluding output buffers.

关键词： CMOS integrated circuits Abstracts Simulation Latches

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The Detection Method of High Frequency Electromagnetic Field for the Malicious Use of Electric Energy Meters

The Detection Method of High Frequency Electromagnetic Field...

引用

International Conference on Multi-modal Information Analytics, MMIA 2021

作者： Guo, Yan Su, Lan Chen, Zhenyu Wen, Zhiguo Pang, Zhenjiang Wang, Zheng Du, Jian Beijing Smartchip Microelectronics Technology Company Limited Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and Information System Zhengzhou China Beijing Smartchip Semiconductor Technology Company Limited Beijing China

ISBN: (纸本)9783030748135

Although smart meters bring convenience to people’s lives, they also bring unnecessary losses to grid operations due to intrinsic defects. Compared with traditional electric meters, the smart meters are susceptible to interference from external magnetic fields, and may stop charging when strong interference occurs, which reduce its reliability. This also brings opportunities for lawbreakers, and the phenomenon of electricity leakage occurs from time to time. In order to overcome the shortcomings of electric meters, this project makes an in-depth research on high frequency electromagnetic field monitoring technology, and carries out the antenna simulation technique, the envelope detection technique and the alarming control system design based on the experimental data of high frequency electromagnetic field environmental parameter monitoring. A technical solution that can quickly detect external high-frequency interference sources and give alarm when stealing occurs is proposed, and a high frequency electromagnetic field monitoring module is designed to protect the operating environment of the meter. © 2021, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Electromagnetic fields

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An Electromagnetic Field Detection Module of Preventing Stealing Electricity

An Electromagnetic Field Detection Module of Preventing Stea...

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International Conference on Multi-modal Information Analytics, MMIA 2021

作者： Wang, Zheng Gong, Yongwen Chen, Zhenyu Sun, Nan Wang, Wenhe Guo, Yan Zhao, Faqiang Beijing Smartchip Microelectronics Technology Company Limited Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and Information System Zhengzhou China Beijing Smartchip Semiconductor Technology Company Limited Beijing China

ISBN: (纸本)9783030748135

Because the current meter does not have the function of detecting electromagnetic fields, there is nothing to do when the meter is disturbed by the high-power electromagnetic field. In order to avoid this kind of electricity stealing behavior, this paper studies how to quickly detect the electromagnetic interference outside the meter based on the characteristics of the meter itself, and timely implement the alarm to prevent electricity theft. In this paper, a feasible and effective electromagnetic field detection technology scheme is proposed, which can detect the electromagnetic field strength around the electric energy meter in real time. When the electromagnetic field intensity reaches the threshold value that affects the metering function of the electric function meter, the electromagnetic field detection module will perform alarm behavior. © 2021, The Author(s), under exclusive license to Springer Nature Switzerland AG.

关键词： Signal interference

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A 0.18/spl mu/m CMOS LNA for UHF-RFID Reader Application

A 0.18/spl mu/m CMOS LNA for UHF-RFID Reader Application

引用

International Conference on Solid-State and Integrated circuit Technology

作者： Yuan-ying Chen Run-xi Zhang Chun-qi Shi Zong-sheng Lai Institute of Microelectronics Circuit & System East China Jiao Tong University Shanghai China

CMOS technologies are widely exploited in the area of GHz RF circuits as well as in the area of baseband circuits. Accordingly, CMOS LNA is gaining its popularity from applications such as GSM, PCS, and WLAN. In this paper, a novel low power consumption and high gain LNA for UHF-RFID (ultra high frequency-radio frequency identification) reader is presented. Basic analysis is introduced using those equations derived. Using these analyses, the stack style single-end structure with LC resonator using on-chip spiral inductor is investigated. This LNA exhibits power gain about 20.4dB and noise figure of 1.6dB while drawing 1mA current from 1.8V supply voltage under TSMC 0.18mum RF-CMOS process. The reverse isolation is about -36.7 dB

关键词： CMOS technology circuits Radio frequency Baseband GSM Personal communication networks Wireless LAN Energy consumption Radiofrequency identification Equations

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A 0.8-2.5GHz Wideband SiGe BiCMOS Low Noise Amplifier with Noise Fiugre of l.98-3.3dB

A 0.8-2.5GHz Wideband SiGe BiCMOS Low Noise Amplifier with N...

引用

2011 IEEE 9th International Conference on ASIC(2011年第九届IEEE国际专用集成电路大会)

作者： Lin Hua Qiong Yan Lei Chen Runxi Zhang Chunqi Shi Zongsheng Lai Institute of Microelectronics Circuit & System East China Normal University Shanghai 200062 China

this paper presents an optimized 0.8-2.5GHz low noise amplifier for wideband applications. Based on cascade structure, a shunt resistive feedback with an emitter degeneration inductor is used. Both low noise figure and high gain are achieved simultaneously. Measured results show that the proposed LNA has a maximum gain of 19.6dB at 0.8GHz and a minimum gain of 14.3dB at 2.5GHz. The noise figure varies from 1.98 to 3.3dB among the whole band. The overall power supply is 24mw at 3V supply and the occupied die area is only 0.4mm2.

关键词： Radio frequency Wideband Optimization Power measurement Noise measurement

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A reconfigurable RF MEMS low-pass filter, based on CPW periodic structures

A reconfigurable RF MEMS low-pass filter, based on CPW perio...

引用

International Conference on Solid-State and Integrated circuit Technology

作者： Wei-xia Ou-yang Xing-long Guo Chao Wang Yong-hua Zhang Zong-sheng Lai Institute of Microelectronics Circuit and System East China Jiao Tong University Shanghai China

ISBN: (纸本)9781424421855

This paper addresses the design and the realization of millimeter wave tunable filters using multiple-contact MEMS switches. The two unit cell filter based on slow-wave coplanar waveguide(CPW) periodic structure are reconfigured into a self-similar single unit cell by the operation of MEMS switches with single actuation. The 3-dB cutoff frequency of the low-pass filter was shifted from 12.5 GHz to 6.1 GHz, which exhibits excellent performance on small size, low insertion loss and is compatible with monolithic microwave integrated circuit technologies. The tested results show that the pass-band ripple is less than 0.5 dB and the out-of-band rejection is better than 40 dB. The driven voltages of the switches are around 25 V.

关键词： Radiofrequency microelectromechanical systems Low pass filters Coplanar waveguides Periodic structures Microswitches Millimeter wave technology Tunable circuits and devices Cutoff frequency Microwave filters Performance loss

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A differential low-noise amplifier for ask receiver

A differential low-noise amplifier for ask receiver

引用

International Conference on Solid-State and Integrated circuit Technology

作者： He-liang Ma Lei Chen Run-xi Zhang Zi-yan Chen Zong-sheng Lai Institute of Microelectronics Circuit & System East China Jiao Tong University Shanghai China

ISBN: (纸本)9781424421855

A differential low noise amplifier applied in ASK receiver is designed and fabricated in UMC 0.18 ¿m CMOS process. The amplifier employs a differential cascode structure with source degeneration stage for single input and differential output, and avoids using balun when connected to mixer. This low noise amplifier has a measured forward gain of 18.2 dB and a noise figure of only 1.65 dB, thus can significantly improves entire receiver performance. Input and output matching is -28 dB and -24 dB, respectively, while input third-order intercept point (IIP3) is -9.8 dBm. The total power dissipation is 6.5 mW at 1.8 V supply and the die area is 0.6 mm × 0.9 mm.

关键词： Low-noise amplifiers Differential amplifiers Impedance matching Noise figure Amplitude shift keying CMOS process Gain measurement Noise measurement Performance gain Power dissipation

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