检索结果-内蒙古大学图书馆

2008 9th International Conference on Solid-State and Integrated-circuit Technology

作者： He-liang MA Lei CHEN Run-xi ZHANG Zi-yan CHEN Zong-sheng LAI Institute of Microelectronics Circuit & System East China Normal University Institute of Microelectronics Circuit & System East ChinaNormal University Engineering Research Center for Nanophotonics & Advanced Instrument Ministry of EducationEast China Normal University

A differential low noise amplifier applied in ASK receiver is designed and fabricated in UMC 0.18um CMOS *** amplifier employs a differential cascode structure with source degeneration stage for single input and differential output,and avoids using balun when connected to *** low noise amplifier has a measured forward gain of 18.2 dB and a noise figure of only 1.65 dB,thus can significantly improves entire receiver *** and output matching is -28 dB and -24 dB,respectively,while input third-order intercept point(IIP3) is -9.8 *** total power dissipation is 6.5 mW at 1.8V supply and the die area is 0.6mm x 0.9mm.

关键词： LNA CMOS Noise figure Gain

来源：评论

学校读者我要写书评

暂无评论

Fabrication of MEMS-based TiO 2 /SnO 2 core-shell nanowires sensor for enhanced H 2 S sensing

引用

Ceramics International 2025年

作者： Zhi-Wei Zheng Shi-Ying He Zhan-Yuan Huang Yi-Wei Wang Xiao-Fei Zhang Lang-Xi Ou David Wei Zhang Hong-Xiu Yu Hong-Liang Lu State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics &Systems School of Microelectronics Fudan University Shanghai 200433 China Institutes of Biomedical Science & Shanghai Stomatological Hospital Fudan University Shanghai 200433 China Zhangjiang Fudan International Innovation Center Shanghai 201203 China National Integrated Circuit Innovation Center Shanghai 201203 China Yiwu Research Institute of Fudan University Chengbei Road Yiwu City 322000 Zhejiang China

The TiO 2 /SnO 2 core-shell nanowires (NWs) with precisely controlled SnO 2 shell thickness were successfully synthesized via facile hydrothermal method and atomic layer deposition (ALD) process. The innovative approach of integrating ALD with hydrothermal synthesis allowed for the precise tuning of the SnO 2 shell thickness, which is critical for optimizing gas sensing performance. The sensing performance of the prepared sensor was found to be highly dependent on the SnO 2 shell thickness. Notably, the sensor with a 20 nm SnO 2 shell exhibited the highest response (R a /R g ) of 5.9 towards 5 ppm H 2 S at 300 °C, which was approximately three times higher than that of the pristine TiO 2 NWs sensor (∼1.8). This significant enhancement in H 2 S sensing performance can be attributed to the formation of the TiO 2 /SnO 2 heterojunction and the optimal SnO 2 shell thickness, which were further elucidated through chemisorbed oxygen model, heterojunction depletion theory, and bandgap alignment. Additionally, the sensor demonstrated low power consumption (∼100 mW), great selectivity towards H 2 S, fast response/recovery times (25 s and 173 s, respectively), the ability to detect H 2 S at low concentrations (200 ppb), high sensitivity, excellent repeatability and remarkable stability (over 10 months). Therefore, the proposed MEMS-based TiO 2 /SnO 2 core-shell NWs gas sensor provides a promising approach for industrial and environmental monitoring applications.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Probability model of bridging defects for random logic via in 3nm double patterning technology at 0.33 NA 2

Probability model of bridging defects for random logic via i...

引用

DTCO and Computational Patterning II 2023

作者： Su, Xiaojing Li, Jingjing Fan, Taian Wang, Jiashuo Dong, Lisong Su, Yajuan Wei, Yayi Institute of Microelectronics The Chinese Academy of Sciences Beijing10029 China University of Chinese Academy of Sciences Beijing10049 China Guangdong Greater Bay Area Institute of Integrated Circuit and System Building A No. 136 Kaiyuan Avenue Guangzhou510535 China

ISBN: (纸本)9781510660977

Extreme ultraviolet (EUV) double patterning (DP) with a numeric aperture (NA) of 0.33 can be introduced for the critical via layers at 3nm logic node. The minimum center to center (C2C) distance of a via pattern may form bridging defects even adopting EUV DP. The implemented via process, pattern shifts induced by EUV illuminator, overlay capability and OPC strategies may lead to bridging defects in EUV DP process. This paper will put forth a compact model to detect potential bridging hotspots and predict the corresponding probability of failure considering aforementioned process variations. The feasible design, patterning solutions, and process parameters can be optimized and compensated quantitatively to avoid design updates and mask rebuild. © 2023 SPIE.

关键词： Failure analysis

来源：评论

学校读者我要写书评

暂无评论

Degradation of SOI SRAMs at 25C Operating Conditions 23

Degradation of SOI SRAMs at 25C Operating Conditions

引用

23rd IEEE Electronics Packaging Technology Conference, EPTC 2021

作者： Wang, K. Gao, J. Zeng, C. Li, B. Zhang, G. Ma, S. Sun, P. Wang, C. Hao, N. Li, J. Liu, H. Zhao, F. Luo, J. Han, Z. Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Silicon Device Technology Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China

ISBN: (纸本)9781665416191

In this paper, a dynamic life evaluation test of 0.35mu {m} PD SOI SRAM is conducted at 250{C} ambient temperatures. Experiments show that the SOI SRAMs can safely operate for more than 600 hours at 250{C}. Analysis of failed devices demonstrates that electro-migration effect and Kirkendall effect may be the direct causes of device degradation. And underlying leakage of the device will greatly accelerate the degradation of the metal interconnect and package, which needs to be improved in future work. © 2021 IEEE.

关键词： Failure analysis

来源：评论

学校读者我要写书评

暂无评论

Symmetrical Spiral Inductor Design and Optimization for VCO design in 0.35μm CMOS Technology

Symmetrical Spiral Inductor Design and Optimization for VCO ...

引用

第五届专用集成电路国际会议（ASICON）

作者： Yeung-Bun Choi Tee-Hui Teo Institute of Microelectronics Integrated Circuit and System Laboratory 11 Science Park Road Singapore Science Park Ⅱ Singapore 117685 Institute of Microelectronics Integrated Circuit and System Laboratory 11 Science Park Road Singapore Science Park Ⅱ Singapore 117685

Optimizing the quality factor of inductor for VCO (voltage control oscillator) application has the added advantages of reducing power consumption and improving the phase noise performance. This work conducts a comprehensive study on a family of symmetrical spiral inductors in standard digital 0.35 μm CMOS process. In addition to quality factor, inductor characteristics of interest include inductor value, peak frequency (frequency at maximum quality factor) and self-resonance frequency. Experimental result shows minor difference in quality factor by simply stacking up additional layer of metallization. However, by exciting the symmetrical inductor in differential mode, 60% to 100% improvement of quality factor and peak frequency were observed. This is accompanied by an extension of self-resonant frequency by 10%-20% in compare with its single-ended excitation mode. These findings are adopted in the design of a high performance fully integrated differential CMOS VCO at 2.4GHz The VCO achieves better than -105 dBc/Hz phase noise at 100KHz offset frequency, with a core current consumption of only 4.5mA at 3.0V supply.

关键词： VCO Symmetrical Spiral Inductor Design and Optimization for VCO design in 0.35 m CMOS Technology

来源：评论

学校读者我要写书评

暂无评论

Characterization of symmetrical spiral inductor in 0.35 μm CMOS technology for RF application

Characterization of symmetrical spiral inductor in 0.35 μm ...

引用

作者： Teo, T. Hui Choi, Yeung-Bun Liao, Huailin Xiong, Yong-Zhong Fu, Jeffrey Shiang Intgd. Circuit and System Laboratory Institute of Microelectronics 11 Science Park Road Singapore 117685 Singapore Sch. of Elec./Electron. Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Characteristics of symmetrical spiral inductor in differential mode is studied and optimized in this work. The characteristics of interest include inductor value, quality factor, peak frequency and self-resonance frequency. Both single-layer and double-layer inductor using top metals are characterized. Inductor excited in differential mode and single-ended mode are characterized for comparison. The optimized symmetrical spiral inductors are fabricated in standard digital 0.35 μm CMOS process. Experimental results show 60-100% improvement of quality factor and peak frequency, meanwhile 10-20% improvement of self-resonance frequency by exciting the symmetrical spiral inductors in differential mode compared with single-ended mode. To further validate the characterized inductor, the differential spiral inductors are adopted in optimizing low power and low phase noise fully integrated 2.4 GHz voltage-controlled oscillator (VCO). The designed VCO achieved phase noise of more than -105 dBc/Hz at 100 kHz offset with approximately 4.5 mA at 3.0 V supply. © 2004 Elsevier Ltd. All rights reserved.

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

A Fine-Grained Access Control Method Based on Role Permission Management 2

A Fine-Grained Access Control Method Based on Role Permissio...

引用

2nd IEEE International Conference on Distributed Computing and Electrical circuits and Electronics, ICDCECE 2023

作者： Yuan, Hualu Wang, Zheng Chen, Zhenyu Gong, Yongwen Lu, Jinqi Hu, Yueshen Li, Lincheng Qian, Fang China Southern Power Grid Extra High Voltage Power Transmission Company Guangzhou China Beijing Smartchip Microelectronics Technology Company Limited Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

ISBN: (纸本)9798350347456

In order to ensure the security of data in power systems, it is necessary to establish a complete data protection system. This paper proposes an innovative access control technology framework based on fine-grained data access control technology and role-based access control management. This framework not only embeds a neural network model, but also introduces context-based information to implement scenario-based access control, making access permissions more precise and flexible. The fine-grained access control technology framework utilizes a data classification model and a hierarchical model, and can sort sensitive data in the directory based on desired classification results, characteristics, and preset data levels. Finally, access matching algorithms can be built based on the required roles and data to achieve rapid matching of hierarchical data and different roles. In summary, the fine-grained access control technology framework based on role-based access control management proposed in this article is a very valuable innovation. It cannot only better protect sensitive data in power systems, but also more accurately and flexibly meet user requirements in terms of access control. The data security protection system established based on this technical framework can effectively respond to different requirements, including different levels and scenarios, and improve the security of the system. © 2023 IEEE.

关键词： Access control

来源：评论

学校读者我要写书评

暂无评论

Characterization and modeling of balun on silicon substrate

Characterization and modeling of balun on silicon substrate

引用

10th International Symposium on Integrated circuits, Devices and systems, ISIC-2004: Integrated systems on Silicon - Proceedings

作者： Xiong, Yong Zhong Teo, T. Hui Fu, J.S. Intgd. Circuit and System Laboratory Institute of Microelectronics Singapore Science Park-II 11 Science Park Road Singapore 117685 Sch. of Elec. and Electronics Eng. Nanyang Technological University Singapore Singapore

ISBN: (纸本)9810517874

A direct extraction method of equivalent circuit parameters for balun on silicon substrate is developed. Three ports balun is the targeted device for this extraction method. The extraction is based on two-port measurement instead of three-port by grounding the third port. The use of on-chip 50Ω load is also avoided. Hence, this method greatly simplified the measurement and extraction process. One set of balun fabricated on 0.18μm standard CMOS process with single-poly-6-metal is used as the test vehicle. The extraction results are in excellent agreement with the measured results up to 10GHz.

关键词： CMOS integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Intelligent Data Directory Construction Based on Data Classification and Grading 2

Intelligent Data Directory Construction Based on Data Classi...

引用

2nd IEEE International Conference on Distributed Computing and Electrical circuits and Electronics, ICDCECE 2023

作者： Wen, Xing Wang, Zheng Chen, Zhenyu Gong, Yongwen Huang, Zhenlin Wang, Ning Zhao, Liuqi Zhu, Jinwei Zhang, Yuheng China Southern Power Grid Extra High Voltage Power Transmission Company Guangzhou China Beijing Smartchip Microelectronics Technology Company Limited Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

ISBN: (纸本)9798350347456

This article proposes an intelligent data directory construction scheme aimed at supporting the design of ultra-high voltage converter stations. The scheme utilizes visual techniques such as knowledge graphs to analyze large-scale data in the power industry and establish a data classification and grading standard. Specifically, the scheme selectively identifies key or core data for association analysis to reduce data processing scale and improve the speed of the directory system. After determining the results of data classification and grading, the scheme employs machine learning algorithms to perform semantic analysis and reasoning on important/core data, providing recommended associated information. Additionally, the scheme selectively performs association analysis on data based on its sensitivity and importance level to reduce the impact of data analysis on system performance and ensure efficient operation. The intelligent data directory also automatically retrieves relevant data based on factors such as association, timeliness, and source, and provides recommended information resources to workers, thereby improving data availability and effectively reducing work pressure. © 2023 IEEE.

关键词： Grading

来源：评论

学校读者我要写书评

暂无评论

The Design Scheme of OCR and Analysis Platform for Power Meter Identification 2

The Design Scheme of OCR and Analysis Platform for Power Met...

引用

2nd IEEE International Conference on Distributed Computing and Electrical circuits and Electronics, ICDCECE 2023

作者： Huang, Zhenlin Wang, Zheng Chen, Zhenyu Gong, Yongwen Wen, Xing Zhao, Liuqi Wang, Ning Feng, Ziyan Qiu, Tianyi China Southern Power Grid Extra High Voltage Power Transmission Company Guangzhou China Beijing Smartchip Microelectronics Technology Company Limited Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

ISBN: (纸本)9798350347456

This paper proposes a new design scheme for an OCR platform. The scheme first pre-trains the model on a standard dataset to improve its basic recognition ability, and then fine-tunes the pre-trained model using transfer learning techniques to a custom scenario, thus improving its recognition ability in power industry applications. This approach greatly reduces the need for annotated data and can quickly adapt to new meter types and updates. Additionally, an intelligent data collection, processing, and analysis platform can effectively help power companies monitor, measure, diagnose, and predict equipment and meters, thereby enhancing enterprise safety and stability. By introducing transfer learning-related techniques, the model's knowledge learned on a standard dataset is transferred to a custom scenario, improving its recognition ability in power industry-specific applications and achieving rapid warning and diagnosis of abnormal situations in power equipment, further improving production efficiency and safety of the enterprise. © 2023 IEEE.

关键词： Learning systems

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：