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International Conference on ASIC

作者： Wei Xu Runxi Zhang Chunqi Shi Institute of Microelectronics Circuit & System East China Normal University Shanghai China Shanghai Key Laboratory of Multidimensional Information Processing Shanghai China

Modeling for voltage-mode R-2R ladder digital to analog converter (DAC) is introduced in this paper. By analyzing the mismatch of resistors in ladder, the DNL and INL calculation expression are obtained. In order to achieve a higher accuracy, segmentation is used in DAC. Five different segmentation methods are compared and 3+5 segmentation structure is chosen to achieve best DNL and INL performance. For post calibration, a code-dependent current consumption expression is derived from the input impedance of R-2R ladder. A 3+5 segmented DAC based on this modeling is implemented in a standard 0.18μm CMOS process. The post simulation results show that DNL and INL are bounded at 0.30 and 0.32LSB.

关键词： Resistors Impedance Mathematical model Simulation Resistance Control systems Digital-analog conversion

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Fast optical proximity correction based on graph convolution network 34

Fast optical proximity correction based on graph convolution...

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Optical Microlithography XXXIV 2021

作者： Zhang, Shengen Ma, Xu Zhang, Junbi Chen, Rui Pan, Yihua Yu, Chengzhen Dong, Lisong Wei, Yayi Arce, Gonzalo R. Key Laboratory of Photoelectronic Imaging Technology and System Ministry of Education of China School of Optics and Photonics Beijing Institute of Technology Beijing100081 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Electrical and Computer Engineering University of Delaware NewarkDE19716 United States

ISBN: (数字)9781510640603

ISBN: (纸本)9781510640597

Optical proximity correction (OPC) is regarded as one of the most important computational lithography approaches to improve the imaging performance of sub-wavelength lithography process. Traditional OPC methods are computationally intensive to pre-warp the mask pattern based on inverse optimization models. This paper develops a new kind of pixelated OPC method based on an emerging machine learning technique namely graph convolutional network (GCN) to improve the computational efficiency. In the proposed method, the target layout is raster-scanned into pixelated image, and the GCN is used to predict its corresponding OPC solution pixel by pixel. For each layout pixel, we first sub-sample its surrounding geometrical features using an incremental concentric circle sampling method. Then, these sampling points are converted into graph signals. Then, the GCN model is established to process the pre-defined graph signals and predict the central pixel within the sampling region on the OPC pattern. After that, the GCN is moved to predict the OPC solution of the next layout pixel. The proposed OPC method is validated and discussed based on a set of simulations, and is compared with traditional OPC methods. © 2021 SPIE.

关键词： Pixels

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Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

Integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit photonic neural computing semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic

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Design of Thermal Conductivity Gas Sensor with Silicon Cap

Design of Thermal Conductivity Gas Sensor with Silicon Cap

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International Conference on Electronic Measurement and Instruments, ICEMI

作者： Changchun Wang Binbin Jiao Xin Liu Chengyuan Zhao Gangqiang Wu Ruiwen Liu Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Institute of Microelectronics Chinese Academy of Sciences Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

This paper presents the design of a suspended micro hotplate-based thermal conductivity gas sensor. A rectangular silicon cap is packaged above the micro hotplate, creating a 20μm air gap. This design increases the proportion of heat dissipation through gaseous thermal conduction in the total heat dissipation of the chip, significantly improving the sensitivity of gas detection. By comparing the differences in total thermal conductivity between the chip with the cap and without it, it can be observed that gas conduction, directly related to gas concentration, constitutes more than 91% of the total thermal conductivity. Through evaluations conducted on a mixture of nitrogen gas with $\text{SF}_6$ and H2, the chip with the silicon cap demonstrated effective detection of changes in $\text{SF}_{6}$ at 200ppm and H2 at 50ppm.

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Implementation and optimization of A5-1 algorithm on coarse-grained reconfigurable cryptographic logic array

Implementation and optimization of A5-1 algorithm on coarse-...

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International Conference on ASIC

作者： Min Liu Ying Jian Yan Wei Li Department of Microelectronics Zhengzhou Institute of Information Science and Technology Zhengzhou China STATE Key Laboratory of Fudan University Special Integrated Circuit and System Shanghai China

A5-1 algorithm is a stream cipher used to encrypt voice data in GSM, which needs to be realized with high performance due to real-time requirements. Traditional implementation on FPGA or ASIC can't obtain a trade-off among performance, cost and flexibility. To this aim, this paper introduces CGRCA to implement A5-1, and in order to optimize the performance and resource consumption, this paper proposes a resource-based path seeking (RPS) algorithm to develop an advanced implementation. Experimental results show that final optimal throughput of A5-1 implemented on CGRCA is 162.87Mbps when the frequency is 162.87MHz, and the set-up time is merely 87 cycles, which is optimal among similar works.

关键词： Throughput Algorithm design and analysis Ciphers Noise measurement Field programmable gate arrays Conferences

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A Low-Complexity Direct Digital Frequency Synthesizer

A Low-Complexity Direct Digital Frequency Synthesizer

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2008 9th International Conference on Solid-State and Integrated-circuit Technology

作者： Lai Lin-hui Li Xiao-jin Lai Zong-sheng Institute of Microelectronics Circuit & System East China Normal University Engineering Research Center for Nanophotonics & Advanced Instrument Ministry of EducationEast China Normal University

The traditional direct digital frequency synthesizer (DDFS) based on a lookup table has very high *** paper describes a low complexity DDFS using smaller lookup table and with minimum additional *** lookup table for sine/cosine functions is split into a coarse-precision ROM and a fineprecision *** of fine-precision ROM and application of shift registers are introduced to further reduce the hardware *** implemental results show that the total size of ROM in this proposed DDFS architecture is only 328 bits compared with 448 bits in [1],and the spectral purity can be as good as 63.58 dBc.

关键词： low-complexity direct digital frequency synthesis(DDFS) digital communications spectral purity.

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Design Study of a New Portable Thermal Anemometer

Design Study of a New Portable Thermal Anemometer

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International Conference on Communications, Information system and Computer Engineering (CISCE)

作者： Huaqiao Hu Binbin Jiao Chengyuan Zhao Jingxiao Zhao Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Institute of Microelectronics of the Chinese Academy Beijing China Zhengzhou Zhongke Integrated Circuit and System Application Research Institute Zhengzhou China

ISBN: (数字)9798350353174

ISBN: (纸本)9798350353181

The objective of this study is to develop a new portable thermal anemometer that is cost-effective, highly accurate, offers a wide measurement range, and is handheld. Utilizing Computational Fluid Dynamics (CFD), this research designs a portable anemometer housing equipped with an innovative shunt structure. It further analyzes the influence of key structural parameters of the sampling flow channel—namely, the length of the flat section, the diameter of the round tube, and the cross-section ratio—on the device's performance. A control circuit is then tailored according to system requirements, and the final assembly of the anemometer is accomplished using 3D printing and PCB technologies. Simulation and experimental results demonstrate that this anemometer substantially reduces the wind speed across the surface of the flow sensor chip while maintaining laminar flow conditions throughout the test range, thereby significantly expanding the test range.

关键词： Temperature measurement Temperature sensors Fluid flow measurement Accuracy Sensitivity Wind speed Computational fluid dynamics

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A 6–18 GHz High Power-Handling Switch in GaN Technology

A 6–18 GHz High Power-Handling Switch in GaN Technology

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Qiqi Li Yongqing Leng Xin Qiu Zhengjia Wang Kai Wu Youbo Jing Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

In this paper, based on the basic working principle and design method of the switching device, a 6–18 GHz high-power single-pole double-throw (SPDT) switch is designed using the 0.25 μm GaN technology, and its layout simulation results are given. The switch adopts a series-parallel symmetrical structure to improve the working bandwidth, and the isolation of the switching circuit is improved by forming a resonance between the parallel inductance and the off-state capacitance of the transistor. The designed switch has a total area of 1.9*2.4mm 2 and has good RF performance. In the frequency band of 6–18 GHz, the insertion loss is less than 1.2 dB, the isolation is greater than 25 dB, and the input 1 dB compression power is 42.8 dBm at 10 GHz.

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A 7-13GHz Compact GaN MMIC Power Amplifier with High-Efficiency

A 7-13GHz Compact GaN MMIC Power Amplifier with High-Efficie...

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IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

作者： Kai Wu Yongqing Leng Aizhen Hu Qiqi Li Xin Qiu Youbo Jing Henan Institute of Advanced Technology Zhengzhou University Zhengzhou China Institute of Microelectronics of the Chinese Academy of Sciences Beijing China Zhengzhou Zhongke Institute of Integrated Circuit and System Application Zhengzhou China

This paper proposes an ultra-broadband high-efficiency power amplifier (PA) designed in WIN 0.25-µm GaN HEMT process. In order to achieve high gain, the PA adopts a two-stage structure. In particular, for expanding bandwidth, the PA adopts a broadband matching network based on Chebyshev low-pass filtering structure. The simulation results show that in continuous wave (CW) mode, within the bandwidth of 7~13GHz, the output power is 39.5dBm~40.7dBm, the PAE is 36%~42%, and the gain is 14.5dB~15.5dB. The average power density of the PA is 1.63 W/mm 2 and the circuit area is 1.8*3.6 mm,

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Fast mask near-field calculation using fully convolution network

Fast mask near-field calculation using fully convolution net...

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Advanced Patterning Solutions (IWAPS), International Workshop on

作者： Jiaxin Lin Lisong Dong Taian Fan Xu Ma Rui Chen Yayi Wei a Integrated Circuit Advanced Process Center Institute of Microelectronics of Chinese Academy of Sciences b University of Chinese Academy of Sciences Beijing China a Integrated Circuit Advanced Process Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China c Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of China School of Optics and Photonics Beijing Institute of Technology Beijing China Integrated Circuit Advanced Process Center Institute of Microelectronics of Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9781728175775

ISBN: (纸本)9781728175782

Near-field calculation for thick mask is a fundamental task in lithography simulations. This paper proposes a fully convolution network (FCN) method to improve the efficiency of three-dimensional (3D) mask near-field calculation compared to the rigorous electromagnetic field (EMF) simulation methods. Taking into account the 3D mask effects, the network is trained based on a set of mask samples and the corresponding near-field data obtained by the EMF simulator. During the testing stage, the trained FCN is used to rapidly predict the diffraction near-field of the testing mask patterns. The performance of the proposed FCN approach is evaluated by simulations based on EUV lithography.

关键词： Solid modeling Extreme ultraviolet lithography Three-dimensional displays Convolution Diffraction Task analysis Testing

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