检索结果-内蒙古大学图书馆

IEEE International Symposium on circuits and Systems (ISCAS)

作者： Yuze Niu Yajun Zhu Wengao Lu Zhaofeng Huang Yuting Gu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University China Peking University information technology institute (Tianjin Binhai) China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

This paper introduces a digital readout integrated circuit (DROIC) for 320×256 target-tracking infrared focal plane arrays(IRFPAs). The circuit is based on a two-stage ADC, which implements 10-bit coarse quantization and 4-bit fine quantization, enabling high frame frequency trace detection. In addition, the locating and independent output of sensitive pixels are realized by a scanning function, which greatly reduces output frequency and power consumption. The proposed ROIC of 15μm pixel-pitch is fabricated using 55nm 1P6M CMOS process. The pixel circuit consumes 379nW. Frame frequency of the target-tracking mode is 1 kHz, the two-stage ADC has a nonlinearity of 0.06%.

关键词： Quantization (signal) Capacitors Array signal processing Power demand Imaging Detectors Integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Potential-based model for asymmetric and symmetric double-gate organic thin-film transistors

引用

Organic Electronics 2025年 144卷

作者： Xiaohui Li Yan Yang Zongcheng Su Yu Xiong Changjiang Chen Long Wang Wei Zhou Hongjun Wang Xiaoxin Xu China State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China College of Communication Engineering (College of Microelectronic) Chengdu University of Information Technology Chengdu 610225 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

This paper proposes a potential-based model for asymmetric and symmetric double-gate organic thin-film transistors (DG-OTFT). The model is derived strictly from the accurate solution of one-dimensional Poisson's equation and current continuity equation. By preserving the proper physics, this model can exactly describe the distribution of electric potential and carrier density of DG-OTFT, and analyze the approximate and non-approximate distribution under the large voltage. Moreover, discussing the Ids characteristics of DG-OTFT based on surface potential equation, the causes of shoulder current are also analyzed in this paper. The theoretical calculations based on this model have good consistency with experimental data, playing an important role in promoting the development of DG-OTFT technology and providing valuable insights for its application in large-scale electronic devices.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array

Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for...

引用

International Electron devices Meeting (IEDM)

作者： Qingting Ding Haijun Jiang Jing Li Chao Liu Jie Yu Pei Chen Yulin Zhao Yaxin Ding Tiancheng Gong Jianguo Yang Qing Luo Qi Liu Hangbing Lv Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Zhejiang Lab Hangzhou China

ISBN: (纸本)9781665425735

For the first time, we demonstrated a unified approach to combine TRNG and PUF function in a 4-layer 3D threshold switching (TS) NbO x array. The dynamic TS variations and static leakage current mismatch is utilized for TRNG and PUF entropy. By digitizing the stochastic oscillator periods induced by thermal noise during TS process, the proposed TRNG presents the ultra-low energy consumption of 0.75 pJ/bit at 2.0 V, and excellent immunity against power noise attack (frequency range up to 400MHz, and amplitude range up to 600mV), which are verified by the NIST SP800-90B and NIST SP800-22 tests. Meanwhile, the proposed PUF has achieved: (i) high PUF key density per unit area (2F2/bit) for 4-layer stacking; (ii) low native bit error rate (1.35%), ideal un-biased normal distribution of inter-die (0.49971) and intra-die (0.00039) hamming distances (HDs); (iii) excellent resistance against machine learning attack. This work provided an excellent hardware solution for low-cost secure integrated systems.

关键词： Performance evaluation Three-dimensional displays Stacking Switches NIST Entropy Hardware

来源：评论

学校读者我要写书评

暂无评论

Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

引用

Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of ***,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to *** overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC *** of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 *** thermoreflectance measurements were employed to investigate the thermal *** thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing *** barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk *** thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management Heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

来源：评论

学校读者我要写书评

暂无评论

2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless Self-Power Chips in IoT

2.4-GHz 16-QAM Passive Backscatter Transmitter for Wireless ...

引用

IEEE International Symposium on circuits and Systems (ISCAS)

作者： Enbin Gong Hao Zhang Xiaolong Chen Le Ye Ru Huang Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

A 2.4-GHz 16-QAM ultra-low-power passive transmitter for wireless self-power chips in IoT is proposed. To expand wireless sensor networks, it achieves energy harvest and low-power wireless communication with 2.4-GHz infrastructure. Besides, the backscatter technique is employed to reduce power consumption and is compatible with multiple quadrature amplitude modulation (M-QAM) to increase data rate. Measured results show that the transmitter just dissipates 1 μW from 1.8-V supply voltage with 6.46% EVM at 4-Mb/s data rate. Moreover, the transmitter has great availability whether at 100 Mb/s data rate or for the input power of a wide dynamic range. The chip is fabricated in the 0.18-μm 1P6M standard CMOS process and occupies a silicon area of 1465 × 915 μm 2 without pads.

关键词： Backscatter Power demand Wireless sensor networks Wireless communication Radio frequency Capacitors Quadrature amplitude modulation

来源：评论

学校读者我要写书评

暂无评论

A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Mingwei ZhU Kaixuan Du Tianqiao Wu Changwu Song Le Ye Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking university Beijing China Information Technology Institute Peking University Tianjin Binhai China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

This paper proposed a novel pico-watt voltage reference (VR) circuit for the Internet of Things (IoT) applications. The core circuit consists of purely NMOS transistors operating in the sub-threshold region. This circuit contains a high-precision, high-power VR circuit (VRH) and a low-power, low-accuracy adjustable VR circuit (VRL). After initialization, the output voltage of VRL is adjusted based on the output voltage of VRH automatically. VRH is turned off to save energy when adjustment is completed. After waiting a period of time, VRH is turned on again to calibrate the output voltage of VRL. Thus, with self-adjusting topology, our proposed circuit achieves high accuracy and low power consumption. The output voltage is 168.5mV, while the power consumption is only 187pW and the temperature coefficient (TC) is 51 ppm/°C from -40°C to 85°C.

关键词： Voltage control Power demand MOS devices Very large scale integration Transistors Temperature control Voltage measurement

来源：评论

学校读者我要写书评

暂无评论

A wearable wireless bio-medical front-end circuit for monitoring electrophysiological signals 3

A wearable wireless bio-medical front-end circuit for monito...

引用

3rd International Conference on Biological Information and Biomedical Engineering, BIBE 2019

作者： Yang, Zheng Wang, Jingmin Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Career Technology Hebei Normal University Shijiazhuang China

ISBN: (纸本)9783800750269

An ECG readout front-end for long-term sleep monitoring is presented in this paper and features high common-mode rejection ratio (CMRR) and low input referred noise. The proposed front-end circuit composed of an AC coupled chopping instrumentation amplifier (CCIA), a SC-filter and a 10 bit SAR ADC. The proposed circuit, built in standard 0.18μm CMOS technology, consumes 1.6 μW from 0.5 V. According to the simulation, the AC coupled IA's CMRR is over 90 dB and input referred noise is merely l.28 μVrms. With the input impedance boost loop, a constant 2.4GO input impedance is achieved (@ typical condition). With the chip, for ECG sensor data, a QRS detection algorithm for heart beat rate calculation is implemented to demonstrate smartphone computation feasibility for real-time signal processing. © VDE VERLAG GMBH · Berlin · Offenbach.

关键词： Electrocardiograms

来源：评论

学校读者我要写书评

暂无评论

Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

Demonstration of Vertically-stacked CVD Monolayer Channels: ...

引用

International Electron devices Meeting (IEDM)

作者： Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China

ISBN: (纸本)9781665425735

Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate the 2-monolayer-MoSc-stacked nanosheets with a sequentially layer-by-layer fabrication process using a gate-a11-around fashion. Compared with the 1-channel back-gate transistor, the 2-channel stacked nanosheets (SN) transistor exhibits more than twice of gm improvement. The high I on >400 µA/µm per channel footprint at V d = 1 V is achieved due to short gate length of 100 nm, and low contact resistance of 0.77 k Ω*µm. Statistics of hundreds of devices with various channel lengths show the performance evolution trend and monolithic integration potential based on the large-scale CVD -grown 2D materials. Furthermore, the vertical-stacked MoS 2 /WSe 2 complementary FETs (CFETs) based on CVD grown are also demonstrated for the first time with about 50% footprint reduction, as compared to the planar devices.

关键词： Performance evaluation Stacking Monolithic integrated circuits Logic gates Ions Contact resistance Market research

来源：评论

学校读者我要写书评

暂无评论

Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance

Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Perf...

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Baotong Zhang Xiaokang Li Yuancheng Yang Haixia Li Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Physics and Information Engineering Fuzhou University Fuzhou China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.

关键词： Electrodes Performance evaluation Resistance Electric potential Switches Hafnium compounds Electric fields

来源：评论

学校读者我要写书评

暂无评论

A first-principles study of the interface property in oxide-based RRAM

A first-principles study of the interface property in oxide-...

引用

IEEE Electron devices Technology and Manufacturing Conference (EDTM)

作者： Nianduan Lu Shang Ma Jiezhi Chen Qian Zhou Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Beihang Univ. School of Information Science and Engineering Shandong Univ. Qingdao

Based on the first-principles calculations, we have investigated the effect of interface on the performance of oxide-based RRAM. It is found that at the interface of oxide-based RRAM, oxygen vacancies with neutral or + 2 valence are easier to form near the interface, and O atoms at the interface tend to diffuse to vacancies. Combining with experiments, the device is electrical forming free for the interface with small thickness. With increasing the interface, the electrical performance of the device will also become worse.

关键词： Performance evaluation Manufacturing

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：