检索结果-内蒙古大学图书馆

25th International Display Workshops, IDW 2018

作者： Su, Yue Geng, Di Gong, Yuxin Shi, Xuewen Lu, Congyan Lu, Nianduan Li, Ling Liu, Ming Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences University of Chinese Academy of Sciences Beijing China Shandong University Shandong China

ISBN: (纸本)9781510883918

We present a new active-matrix micro-pixelated light-emitting diode (AMLED) pixel circuit based on amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The proposed circuit compensates the threshold voltage (Vth) shifts of driving TFT. The simulation results reveal the relative current error rate is below 1.07% under the Vth deviation of 1 V. © 2018 International Display Workshops. All rights reserved.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

2.4-GHz Pre-bias RF Energy Harvesting Rectifier with -35-dBm Sensitivity for Self-powered Chips

2.4-GHz Pre-bias RF Energy Harvesting Rectifier with -35-dBm...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Enbin Gong Mingxiao He Hao Zhang Yongan Zheng Luyao Zhang Xiucheng Hao Le Ye Huailin Liao Ru Huang Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

This paper proposes a 2.4-GHz pre-bias RF energy harvesting rectifier with -35-dBm sensitivity for self-powered chips of wireless sensor networks (WSNs) for Internet of Things (IoT) applications. For high sensitivity, a pre-bias topology is presented by designing pre-stage and drive-stage rectifiers separately with multiple antennas. The pre-stage and the bias circuit just provide a proper bias voltage without driving loads. At single drive-stage configuration, -35-dBm sensitivity can be achieved with 2.4-GHz RF input power, 10-MΩ output load and 0.5-V continuous output voltage. When an 1% duty-cycled operating mode is adopted, 25-μW power can be supplied intermittently with 0.5-V output voltage. This proposed circuit is designed in 0.18-μm standard CMOS process.

关键词： Rectifiers Sensitivity Radio frequency Energy harvesting Wireless sensor networks Antennas Topology

来源：评论

学校读者我要写书评

暂无评论

Flexible memristors as electronic synapses for neuro- inspired computation based on scotch tape-exfoliated mica substrates

引用

Nano Research 2018年第3期11卷 1183-1192页

作者： Xiaobing Yan Zhenyu Zhou Jianhui Zhao Qi Liu Hong Wang Guoliang Yuan Jingsheng Chen College of Electron and Information Engineering Key Laboratory of Digital Medical Engineering of Hebei Province Key Laboratory of Optoelectronic Information Materials of Hebei Province Hebei University Baoding 071002 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China School of Materials Science and Engineering Nanjing University of Science and Technology Nanjing 210094 China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore

Flexible memristor devices based on plastic substrates have attracted considerable attention due to their applications in wearable computers and integrated circuits. However, most plastic-substrate memristors cannot function or be grown in high-temperature environments. In this study, scotch-tape-exfoliated mica was used as the flexible memristor substrate in order to resolve these high-temperature issues. Our TiN/ZHO/IGZO memristor, which was constructed using a thin （10 μm） mica substrate, has superior flexibility and thermostability. After bending it 103 times, the device continues to exhibit exceptional electrical characteristics. It can also be implemented for transitions between high and low resistance states, even in temperatures of up to 300 ℃. More importantly, the biological synaptic characteristics of paired-pulse facilitation/depression （PPF/PPD） and spike- timing-dependent plasticity （STDP） were observed through applying different pulse measurement modes. This work demonstrates that flexible memristor devices on mica substrates may potentially allow for the realization of high-temperature memristor applications for biologically-inspired computing systems.

关键词： mica flexible memristor synapse

来源：评论

学校读者我要写书评

暂无评论

A 781Mbps-5Gbps DLL-Based CDR with Starting-Control Circuit

A 781Mbps-5Gbps DLL-Based CDR with Starting-Control Circuit

引用

IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Cheng Li Yuequan Liu Song Jia Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing P. R. China

This paper presents a 781 Mbps-5 Gbps wide-range clock and data recovery (CDR) circuit combined delay-locked loop (DLL). A novel starting-control circuit is introduced to solve the inherent problem of false locking and expand the phase capture range. The phase detector (PD) achieves sampling and charge-pump tasks in one pass-gate construction, which optimizes the design complexity and cost. The results demonstrate the peak-to-peak jitter is 5.74 ps and the total power consumption is 4.6 mW at 4 Gbps with 1.2V power supply.

关键词： DLL-Based CDR PD

来源：评论

学校读者我要写书评

暂无评论

Echo state graph neural networks with analogue random resistor arrays

arXiv

引用

arXiv 2021年

作者： Wang, Shaocong Li, Yi Wang, Dingchen Zhang, Woyu Chen, Xi Dong, Danian Wang, Songqi Zhang, Xumeng Lin, Peng Gallicchio, Claudio Xu, Xiaoxin Liu, Qi Cheng, Kwang-Ting Wang, Zhongrui Shang, Dashan Liu, Ming Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong University of Chinese Academy of Sciences Beijing100049 China Frontier Institute of Chip and System Fudan University Shanghai 200433 China College of Computer Science and Technology Zhejiang University Zhejiang310027 China Department of Computer Science University of Pisa Largo B. Pontecorvo 3 Pisa56127 Italy Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong

Recent years have witnessed an unprecedented surge of interest, from social networks to drug discovery, in learning representations of graph-structured data. However, graph neural networks, the machine learning models for handling graph-structured data, face significant challenges when running on conventional digital hardware, including von Neumann bottleneck incurred by physically separated memory and processing units, slowdown of Moore's law due to transistor scaling limit, and expensive training cost. Here we present a novel hardware-software co-design, the random resistor array-based echo state graph neural network, which addresses these challenges. The random resistor arrays not only harness low-cost, nanoscale and stackable resistors for highly efficient in-memory computing using simple physical laws, but also leverage the intrinsic stochasticity of dielectric breakdown to implement random projections in hardware for an echo state network that effectively minimizes the training cost thanks to its fixed and random weights. The system demonstrates state-of-the-art performance on both graph classification using the MUTAG and COLLAB datasets and node classification using the CORA dataset, achieving 34.2×, 93.2×, and 570.4× improvement of energy efficiency and 98.27%, 99.46%, and 95.12% reduction of training cost compared to conventional graph learning on digital hardware, respectively, which may pave the way for the next generation AI system for graph learning. Copyright © 2021, The Authors. All rights reserved.

关键词： Graphic methods

来源：评论

学校读者我要写书评

暂无评论

A Self-Adaptive Digital Calibration Technique for MultiChannel High Resolution Capacitive SAR ADCs 12

A Self-Adaptive Digital Calibration Technique for MultiChann...

引用

2017 IEEE 12th International Conference on ASIC

作者： Binbin Lyu Wengao Lu Sijia Yang Zhongjian Chen Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Information Technology Institute(Tianjin Binhai)

ISBN: (纸本)9781509066261;9781509066254

This paper introduces a self-adaptive digital technique to calibrate multi-channel SAR *** than achieving higher resolution by adjusting the analog component values,this new digital method infers the capacitor weights of a SAR ADC with the help of a channel-shared high resolution sigma-delta ADC,which results in remarkable improvements in the capacitive SAR ADCs' *** increases from 11.06 bits to 12.67 *** digital calibration logic is based on LMS(least mean squares) and gradient descent.

关键词： SAR ADC multi-channel digital calibration

来源：评论

学校读者我要写书评

暂无评论

Two-Dimensional Heterojunction Photovoltaic Cells with Low Spontaneous-Radiation Loss and High Efficiency Limit

引用

Physical Review Applied 2019年第3期12卷 034023-034023页

作者： Jiangtao Liu Menghui Fan Kun Luo Qin Yang Jun Li Zhenhua Wu College of Mechanical and Electrical Engineering Guizhou Minzu University Guiyang 550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Semiconductor Photonics Research Center Xiamen University Xiamen 361005 China University of CAS Beijing 100049 China

This work presents theoretical investigations on the spontaneous-radiation loss of two-dimensional van der Waals heterojunction photovoltaic cells (2D-PVcs) combined with an interference-based light-trapping structure. We find that 2D-PVcs possess much lower spontaneous radiation loss, since the solid angle of the spontaneous radiation is a magnitude smaller than that in traditional PVcs. The efficiency limit of a 2D-PVc can be 10% larger than that of a traditional PVc. Furthermore, we demonstrate that the spontaneous-radiation loss can be further reduced by introducing only a weak light-concentrating system, approaching the efficiency limit of traditional PVcs under perfect focus. In a trapped structure, the smaller the light absorption coefficients of the photovoltaic cells, the higher are the efficiency limits that are achieved. Finally, the spontaneous-radiation loss increases as the battery thickness increases, indicating that the 2D-PVc has the lowest spontaneous emission loss because of its extremely low thickness.

关键词： Carrier generation & recombination Optical lattices & traps Optoelectronics Photovoltaic absorbers Multilayer thin films Organic semiconductors Solar cells Van der Waals systems

来源：评论

学校读者我要写书评

暂无评论

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaoqiao Dong Yuancheng Yang Gong Chen Shuang Sun Qifeng Cai Xiaokang Li Xia An Xiaoyan Xu Wanrong Zhang Ming Li Faculty of Information Technology Beijing University of Technology Beijing China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller C p /C total so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization.

关键词： Logic gates Parasitic capacitance Gallium arsenide Semiconductor device modeling MOSFET Silicon

来源：评论

学校读者我要写书评

暂无评论

High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry

引用

Angewandte Chemie 2023年第28期135卷

作者： Dr. Huanhuan Shi Prof. Mengmeng Li Shuai Fu Dr. Christof Neumann Dr. Xiaodong Li Dr. Wenhui Niu Yunji Lee Prof. Mischa Bonn Dr. Hai I. Wang Prof. Andrey Turchanin Dr. Ali Shaygan Nia Dr. Sheng Yang Prof. Xinliang Feng Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry Technische Universität Dresden Mommsenstrasse 4 01062 Dresden Germany Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China University of Chinese Academy of Sciences 100049 Beijing China Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany Institute of Physical Chemistry and Center for Energy and Environmental Chemistry Jena (CEEC Jena) Friedrich Schiller University Jena Lessingstrasse 10 07743 Jena Germany Max Planck Institute for microstructure physics Weinberg 2 06120 Halle Germany Frontiers Science Center for Transformative Molecules School of Chemistry and Chemical Engineering Shanghai Jiao Tong University 200240 Shanghai China

Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In 2 Se 3 vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W −1 ), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In 2 Se 3 , graphene/MoS 2 and graphene/MoSe 2 vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.

关键词： 2D Semiconductors Electrochemical Synthesis NIR Photodetectors Solution Processability Van Der Waals Heterostructures

来源：评论

学校读者我要写书评

暂无评论

A Millimeter-Wave SPDT Using Integrated Fan-Out Wafer Level Packaging

A Millimeter-Wave SPDT Using Integrated Fan-Out Wafer Level ...

引用

International Conference on Microwave and Millimeter Wave Technology Proceedings

作者： Xing Quan Yiqi Zhuang Jiang Luo Guodong Su School of Electro-Mechanical Engineering Xidian University Xian School of Microelectronics Xidian University Xian Nanjing Electronic Devices Institute Nanjing China Key Laboratory of RF Circuits and Systems Ministry of Education Hangzhou Dianzi University Hangzhou China

Integrated fan-out wafer level packaging (InFO-WLP) technology has the advantages in small form factor and high quality passive device. This paper proposes a single pole double throw switch (SPDT) which employs the λ/4 based structure using the InFO-WLP technology. The control device of the SPDT utilizes the 40 nm bulk CMOS process and the λ/4 transmission line is realized by the metal in redistribution layers (RDLs). The simulated results show the proposed SPDT achieves less than 2.1 dB insertion loss, better than 17.4 dB isolation and better than -10 return loss at 26-34 GHz. The SPDT has a compact silicon size of 190 μm×140 μm.

关键词：

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：