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arXiv 2019年

作者： Li, Xiaojing Yang, Wen Luo, Kun Wu, Zhenhua College of Physics and Energy Fujian Normal University Fuzhou350117 China Beijing Computational Science Research Center Beijing100094 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

We investigate theoretically the anisotropic electronic and optical behaviors of a monolayer black phosphorus (phosphorene) modulated by periodic potential superlattices in arbitrary directions. We demonstrate that different strength and orientation of the phosphorene potential superlattice can give rise to distinct energy spectra, i.e., tuning the intrinsic electronic anisotropy. Accordingly, the anisotropic effective mass, and optical absorption modulated by superlattice strength and orientation are addressed systematically. This feature enables tuning capability more than one order of magnitude in the optical absorption spectrum. Our findings should be useful in building phosphorene optical and (opto)electronic devices by applying external potential superlattice. Copyright © 2019, The Authors. All rights reserved.

关键词： Light absorption

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Regulating phase change behavior and surface characteristics of Sn15Sb85 thin film by oxygen doping

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Journal of Physics D: Applied Physics 2019年第41期52卷 415104-415104页

作者： Hu, Yifeng You, Haipeng Chou, Qingqian Lai, Tianshu School of Mathematics and Physics Jiangsu University of Technology Changzhou213000 China State-Key Laboratory of Optoelectronic Films and Technology School of Physics Sun Yat-Sen University Guangzhou510275 China State Key Lab of Silicon Materials Zhejiang University Hangzhou310027 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

In this paper, oxygen doped Sn15Sb85 thin films were proposed to reduce the power consumption for phase change memory (PCM) application. Compared with Sn15Sb85, oxygen doped Sn15Sb85 thin film had higher crystallization temperature (168 °C-255 °C) and broader energy band gap (1.23-1.55 eV). X-ray diffraction patterns and transmission electron microscope showed that the crystallization of thin film was suppressed and grains became smaller when oxygen was added. After oxygen doping, the surface roughness decreased from 13.6 to 2.5 nm. Antimony oxide formed to enhance the thermal stability. In comparison to Ge2Sb2Te5, oxygen doped Sn15Sb85 had an ultra-fast phase transition speed (3.9 ns) confirmed by laser picosecond technology. The result of differential scanning calorimetry revealed that oxygen doped Sn15Sb85 had a lower melting temperature (494 °C). PCM cells based on the oxygen doped Sn15Sb85 thin film were fabricated to evaluate the electrical characteristics as well. The results indicated that the oxygen doped Sn15Sb85 thin film had great potentiality in PCM application. © 2019 IOP Publishing Ltd.

关键词： Electric power utilization

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Design of an Adaptive Loop Gain Controller Based on Auto-correlation Detection Scheme in All-Digital Phase-Locked Loop

Design of an Adaptive Loop Gain Controller Based on Auto-cor...

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International Conference on ASIC

作者： Sheng Zhang Song Jia Hanzun Zhang Rongshan Wei Weixin Gai Fuzhou University Fuzhou 350116 P.R. China Institute of Microelectronics Peking University Beijing P.R. China Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing P. R. China College of Physics and Information Engineering Fuzhou University Fuzhou P. R. China

In all-digital phase-locked loop (ADPLL), the optimal loop gain which minimize the phase noise becomes uncertain due to process, voltage, and temperature (PVT) variation. An adaptive loop gain controller (ALGC) used to automatically adjust the loop gain is proposed in this paper. The output pattern of bang-bang phase frequency detector (BBPFD) is correlated with the loop gain, so the ALGC structure can converge the gain to the optimum value by detecting the auto-correlation coefficient of BBPFD output. The simulation results show that the proposed ALGC structure can effectively reduce the output jitter.

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Band-Offset Degradation in van der Waals Heterojunctions

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Physical Review Applied 2019年第4期12卷 044064-044064页

作者： Yawei Lv Qingjun Tong Yuan Liu Ling Li Sheng Chang Wenguang Zhu Changzhong Jiang Lei Liao Key Laboratory for Micro-/Nano-Optoelectronic Devices of the Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China School of Physics and Technology Wuhan University Wuhan 430072 China International Center for Quantum Design of Functional Materials (ICQD) Hefei National Laboratory for Physical Science at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics University of Science and Technology of China Hefei 230026 China

Two-dimensional materials-based van der Waals heterojunctions (vdWHs) are promising candidates for tunnel field-effect transistors (TFET) because of their atomically clean and electronically sharp junction interfaces and lattice mismatch-free characteristics. The tunneling behaviors of the TFETs greatly depend on the energy band alignments between different layers. By first-principles analyses, the band offsets in vdWHs are found to be very sensitive to the vdW interaction and temperature, especially for the type-III heterojunctions, which can be switched to the type-II configuration. This band-offset degradation is attributed to the interlayer charge transfer, generating built-in electric fields and potential differences, consistent with the plate condenser model. The charges are mainly transferred by two mechanisms: spontaneous and thermal excitation-assisted electron tunneling. The first one is caused by the electron wave function overlaps and energy difference of the valence band maximum and conduction band minimum, which belong to different materials, whereas the latter one is strongly correlated to the thermal excitations. The band-offset degradation is a general phenomenon in vdWHs, especially for those with a type-III band alignment. Therefore, attention should be paid in TFET investigations, since they are switched on by changing the band alignments to the type-III configuration.

关键词： Electronic structure Thermionic emission 2-dimensional systems Field-effect transistors Transition metal dichalcogenides Tunnel junctions Van der Waals systems Density functional theory

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Flexible cation-based threshold selector for resistive switching memory integration

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Science China(Information Sciences) 2018年第6期61卷 50-57页

作者： Xiaolong ZHAO Rui WANG Xiangheng XIAO Congyan LU Facai WU Rongrong CAO Changzhong JIANG Qi LIU Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam ApplicationWuhan University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences

Emerging resistive switching random access memory（RRAM）, considered as the most promising candidate of flash memory, is favorable for in flexible electronic system. However, in high density flexible crossbar RRAM array, crosstalk issue that currents from the neighboring unselected cell lead to failure of write and read operations, still keeps a main bottleneck. Therefore, flexible selector compatible with the flexibility of the RRAM array should be focused on to configure one selector-one resistor（1 S1 R） system,which is immune to crosstalk issue. In this paper, flexible cation-based threshold switching（TS） selectors（Pt/Ag/Hf O2/Pt/Ti/parylene） are fabricated and the compressive performance is studied *** device shows excellent bidirectional volatile TS characteristics, including high selectivity ratio（10～9）, low operating voltages（|VTH|<1 V）, ultra-low leakage current(～10-13A) and good flexibility. The successful demonstration of the wire connected 1 S1 R unit comprising this flexible selector and one bipolar resistor cell indicates the great potential of this cation-based selector to restrain the crosstalk issue in a large flexible RRAM array.

关键词： cation-based threshold switching resistive switching flexible selector conductive filament(CF) 1S1R

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A Low Power High Output Frequency Two-stage Output Buffer for 2720X2704 Infrared Focal Plane Array

A Low Power High Output Frequency Two-stage Output Buffer fo...

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IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Meicen Jin Yuze Niu Wengao Lu Yacong Zhang Zhongjian Chen Yi Zhuo Peking University Information Technology Institute (Tianjin Binhai) China Key Laboratory of Microelectronic Devices and Circuits Peking University China

This paper presents a low power high output frequency readout integrated circuit(ROIC) for 2720 X 2704 cryogenic infrared focal plane array (IRFPA). A two-stage output buffer is proposed to reduce power consumption and improve output frequency. This ROIC has been designed and fabricated in 0.35um CMOS technology and chip size is 44mmx46mm. The ROIC implements a dynamic range of 86dB and a readout rate of 10MHz while consumes only 180mW.

关键词： IRFPA ROIC proposed

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BNReLU: Combine Batch Normalization and Rectified Linear Unit to Reduce Hardware Overhead

BNReLU: Combine Batch Normalization and Rectified Linear Uni...

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International Conference on ASIC

作者： Jiexian Ge Xiaoxin Cui Kanglin Xiao Chenglong Zou YiHsiang Chen Rongshan Wei College of Physics and Information Engineering Fuzhou University Fuzhou 350116 P. R. China Institute of Microelectronics Peking University Beijing P. R. China Key Laboratory of Microelectronics Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing P. R. China College of Physics and Information Engineering Fuzhou University Fuzhou P. R. China

With the pursuit of higher accuracy, the convolutional neural network has become deeper. Thus, the hardware overhead occupied have increased. Batch Normalization (BN) operation is an indispensable part of the network, and its occupied hardware resources cannot be ignored. In this paper, aiming to reduce hardware overhead caused by BN operation, we combine BN operation and ReLU activation function and propose the BNReLU operation without retraining the network. The experiment results show that compared with traditional BN+ReLU layer, hardware overhead of BNReLU operation is reduced by about 50%. With 32-bit float point input for each layer, the hardware overhead of BRAM, DSP, FF, and LUT for convolutional layer in the FPGA is reduced by 17.16%, 23.08%, 17.64%, and 16.05%.

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Metric-Torsion Duality of Optically Chiral Structures

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Physical Review Letters 2019年第20期122卷 200201-200201页

作者： Yongliang Zhang Lina Shi Ruo-Yang Zhang Jinglai Duan Jack Ng C. T. Chan Kin Hung Fung Department of Applied Physics The Hong Kong Polytechnic University Hong Kong China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics The Hong Kong University of Science and Technology Hong Kong China Institute of Modern Physics Chinese Academy of Sciences Lanzhou 730000 China Department of Physics Hong Kong Baptist University Hong Kong China

We develop a metric-torsion theory for chiral structures by using a generalized framework of transformation optics. We show that the chirality is uniquely determined by a metric with the local rotational degree of freedom. In analogy to the dislocation continuum, the chirality can be alternatively interpreted as the torsion tensor of a Riemann-Cartan space, which is mimicked by the anholonomy of the orthonormal basis. As a demonstration, we reveal the equivalence of typical three-dimensional chiral metamaterials in the continuum limit. Our theory provides an analytical recipe to design optical chirality.

关键词： Transformation optics Complex media Metamaterials

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Comparator for integrated readout circuits with a-IGZO TFTs 25

Comparator for integrated readout circuits with a-IGZO TFTs

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25th International Display Workshops, IDW 2018

作者： Gong, Yuxin Geng, Di Su, Yue Shi, Xuewen Lu, Congyan Lu, Nianduan Chen, Jiezhi Li, Ling Liu, Ming Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing100029 China School of Information Science and Engineering Shandong University 27 Shanda Nanlu Jinan250100 China

ISBN: (纸本)9781510883918

We propose an integrated comparator design based on a-IGZO TFTs. The comparator contains two amplification stages that can compare 500mV difference between the reference and the input signal. Simulation shows that the circuit can work under a clock frequency of 100 kHz and power consumption is around 1.036 mW. © 2018 International Display Workshops. All rights reserved.

关键词： Operational amplifiers

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Current Degradation and Delay Analysis of Series-Connected circuits Based on Novel TFET Design

Current Degradation and Delay Analysis of Series-Connected C...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Yuan Zhong Cheng Chen Qianqian Huang Zhixuan Wang Le Ye Jenchung Lou Ru Huang Institute of Integrated Circuit Engineering Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China

In this paper, for the first time, we investigate the circuit current degradation behavior in series-connected structures based on conventional Tunnel FET (TFET) and our proposed Multi-Finger Schottky-barrier TFET (MFSB-TFET). Due to the suppressed super-linear onset behavior in the output characteristics of MFSB-TFET, the current degradation issue in serious-connected structure for conventional TFET can be much alleviated. Correspondingly, the circuit delay ratio defined as the pull down delay of N-input NAND over the pull down delay of inverter is investigated to character the impact of this issue on circuits. The simulation results reveals that MFSB-TFET has a similar behavior to MOSFET in the series-connected structures while conventional TFET shows much more delay sacrifice.

关键词： Delays TFETs Degradation MOSFET Inverters Topology

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