检索结果-内蒙古大学图书馆

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Hao Wang Min Yu Baohua Shi Yahuan Huang Xinyang Zhao Yufeng Jin National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of Microelectronics Peking University

ISBN: (纸本)9781467397209

Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the generation current in the main junction depletion region is more significant in the ultra-thick structures, while the contribution of the generation current generated at the silicon-oxide interface is more evident in the ultra-thin structures.

关键词： Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application PIN

来源：评论

学校读者我要写书评

暂无评论

Analysis of Self-heating Effect in a SOI LDMOS Device under an ESD Stress 13

Analysis of Self-heating Effect in a SOI LDMOS Device under ...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Tianxing Li Jian Cao Lizhong Zhang Yuan Wang School of Software and Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits Peking University

ISBN: (纸本)9781467397209

The analysis of self-heating effect in a SOI LDMOS device under an ESD stress is presented in this paper. TCAD tools are used as the platform to explore the physical process of the bulk LDMOS device and the influence of buried oxide layer inserted in the substrate. Simulation results uncover that the buried oxide layer degrades the current-handling ability and changes the lattice temperature distribution of the LDMOS device, which makes the low ESD robustness of the SOI LDMOS device.

关键词： LDMOS Analysis of Self-heating Effect in a SOI LDMOS Device under an ESD Stress SOI ESD

来源：评论

学校读者我要写书评

暂无评论

A Capacitor Self-Calibration Technique for High Resolution ADCs 13

A Capacitor Self-Calibration Technique for High Resolution A...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Yitong Cao Wengao Lu Kezhi Li Zhaokai Liu Zhongjian Chen Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

In this paper, a novel capacitor self-calibration technique is presented, which can be used in high resolution ADCs, such as SAR ADC and pipeline ADC. The capacitors achieve self-calibration through the adjusting capacitors array and successive approximation(SAR) logic. A 14-bit SAR ADC using capacitor selfcalibration technique we proposed has been designed. The simulation result shows that the SNDR/SFDR has been improved from 63.80 d B/67.89 d B to 78.55 d B/92.36 dB, respectively, using the proposed capacitor self-calibration technique.

关键词： ADC A Capacitor Self-Calibration Technique for High Resolution ADCs SAR

来源：评论

学校读者我要写书评

暂无评论

Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors (Adv. Electron. Mater. 5/2019)

引用

Advanced Electronic Materials 2019年第5期5卷

作者： Yao Yao Xinnan Huang Songang Peng Dayong Zhang Jingyuan Shi Guanghui Yu Qi Liu Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

来源：评论

学校读者我要写书评

暂无评论

Simulation of a Novel Integrated 4H-SiC Temperature Sensor

Simulation of a Novel Integrated 4H-SiC Temperature Sensor

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Hang Gu Yourun Zhang Juntao Li Yidan Tang Yun Bai High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu China Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu China

This paper presents a novel integrated Schottky barrier diode temperature sensor in a 4H-SiC power MOSFET. Dual electrical isolation and additional current path are applied to this temperature sensor, allowing the sensor to work properly in any operating state of power MOSFET. Due to the sufficient electrical isolation, the crosstalk between sensor and power MOSFET is almost eliminated. Furthermore, high sensitivity S=1.21mV/K is observed for a constant bias current of I d =1mA. The temperature sensor exhibits a good degree of linearity with a root mean square error R 2 =0.99996.

关键词： Temperature sensors Temperature measurement MOSFET Current measurement Junctions Schottky diodes Crosstalk

来源：评论

学校读者我要写书评

暂无评论

A Prolonged Discharge Time ESD Power-rail Clamp Circuit Structure with Strong Ability to Prevent False Triggering 13

A Prolonged Discharge Time ESD Power-rail Clamp Circuit Stru...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Jian Cao Xiangxiang Xue Yuan Wang Guangyi Lu Xing Zhang School of Software and Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University

ISBN: (纸本)9781467397209

A new reliable Electrostatic Discharge(ESD) power-rail clamp circuit has been proposed in this paper. The new circuit structure has achieved good results in reducing leakage current, anti-false triggering, increasing discharge transistor's turn on time. During the ESD event, the proposed circuit has a discharge time of 755.22 ns, which is about 6.74 times that of conventional R-C power-rail clamp circuit. Besides, the leakage current of whole circuit eventually stabilizes at a lower level of 46.50 nA.

关键词： ESD power-rail clamp circuit leakage current anti-false triggering discharge time

来源：评论

学校读者我要写书评

暂无评论

A 1.67-ppm/°C 64-ppm/V Curvature-Compensated Bandgap Reference Based on a Transcendental Equation 13

A 1.67-ppm/°C 64-ppm/V Curvature-Compensated Bandgap Refere...

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Ruocheng Wang Wengao Lu Yajun Zhu Yuze Niu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper proposes a current-mode bandgap referenc which employs a novel "coarse" voltage replication to offset the 2nd-order curvature due to base-emitter voltag of the BJT. The coarse replication is based on a proces insensitive transcendental equation which regulates th independent CTAT current. The bandgap reference which will be implemented in 0.35μm CMOS process has a low operating current of 0.85μA. Under a 2.6V to 4V supply its line sensitivity is 64ppm/V even in the wors condition, and its TC is only 1.67ppm/°C in th temperature range of-55°C to 115°C.

关键词： current-mode bandgap reference curvature compensation low temperature coefficient

来源：评论

学校读者我要写书评

暂无评论

A 14-bit 8-column shared SAR ADC for 640×512 IRFPA 13

A 14-bit 8-column shared SAR ADC for 640×512 IRFPA

引用

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Zhaokai Liu Wengao Lu Yuze Niu Dahe Liu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University information technology institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper presents a new structure of column-level successive approximation register(SAR) analogue-to-digital converter(ADC) for Infrared Focal Plane Array. In this design, each column has a capacitance array and each comparator and SAR logic block are shared by 8 columns. By using this shared structure, we achieved smaller silicon area, lower power dissipation and lower noise. And shared structure leaves enough space for signal and control wires of ADC blocks, therefore relieves the mutual disturbance among wires. Also, correlated switches are used to cancel the offset generated by charge injection. The conversion accuracy of the proposed ADC is 14 bits and is used for a 640×512 array with a frame rate of 50 Hz.

关键词： ADC SAR A 14-bit 8-column shared SAR ADC for 640 IRFPA

来源：评论

学校读者我要写书评

暂无评论

Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain 11th

Design and simulation of 4H-SiC MESFET ultraviolet photodete...

引用

11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Bai, Yun Li, Chengzhan Shen, Huajun Yang, Chengyue Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China

ISBN: (纸本)9783035710434

The 4H-SiC ultraviolet detector of the MESFET structure with gain is proposed and simulated in this paper. The Schottky gate of MESFET is transparent or semi-transparent to allow more of the incident UV light to be absorbed in the device. The effect of the doping and thickness of the channel layer on the photocurrent of the 4H-SiC MESFET UV detector is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC MESFET exhibits photocurrent below 380 nm. And only when the channel of the 4H-SiC MESFET is in the open state there will be a gain in the detector. Shorter gate length is beneficial to improve the responsivity and the gain of the 4H-SiC MESFET UV detector. When the gate length is set to 10 μm with the channel thickness of 0.3 μm and channel doping of 1×1017 cm-3, the peak responsivity and the gain are calculated to be 12.9 A/W and 55.6 respectively. © 2017 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

Author Correction: How to report and benchmark emerging field-effect transistors

引用

Nature Electronics 2022年 620页

作者： Zhihui Cheng Son T. Le Curt A. Richter Chin-Sheng Pang Zhihong Chen Joerg Appenzeller Peiqi Wang Xiangfeng Duan Yanqing Wu Davood Shahrjerdi Iuliana Radu Max C. Lemme Lian-Mao Peng Steven J. Koester Eric Pop Aaron D. Franklin Nanoscale Device Characterization Division National Institute of Standards and Technology Gaithersburg MD USA Department of Electrical and Computer Engineering Purdue University West Lafayette IN USA Theiss Research La Jolla CA USA Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA USA School of Integrated Circuits Peking University Beijing China Electrical and Computer Engineering New York University Brooklyn NY USA Center for Quantum Phenomena Physics Department New York University New York NY USA IMEC Leuven Belgium RWTH Aachen University Chair of Electronic Devices Aachen Germany AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Department of Electrical Engineering Stanford University Stanford CA USA Department of Electrical and Computer Engineering Duke University Durham NC USA Department of Chemistry Duke University Durham NC USA

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：