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Line-edge roughness induced single event transient variation in SOI Fin FETs

Journal of Semiconductors 2015年第11期36卷 25-29页

作者：武唯康安霞蒋晓波陈叶华刘静静张兴黄如 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

The impact of process induced variation on the response of SOI Fin FET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When Fin FET biased at OFF state configuration（Vgs D0, Vds DVdd/ is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse（single event transient, SET） is consequently formed. The results reveal that with the presence of line-edge roughness（LER）, which is one of the major variation sources in nano-scale Fin FETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered： type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters,correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size.

关键词： heavy ion irradiation single event transient variation line-edge roughness SOI Fin FET

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Enhanced recrystallization of ultra-thin α-silicon film by 2-D confined lattice regrowth

Enhanced recrystallization of ultra-thin α-silicon film by ...

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IEEE International Nanoelectronics Conference (INEC)

作者： Hao Zhang Ming Li Gong Chen Yuancheng Yang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, the improved recrystallization of ultra-thin amorphous silicon (α-Si) film was realized by two-dimensionally confined lattice regrowth with normal rapid thermal annealing process. By experimental investigation, the α-Si films with thickness of 400 Å were found to be recrystallized even at 850°C for only 35s rapid thermal annealing (RTA). With capped Si 3 N 4 layer, the lattice regrowth was confined more strictly to along the film plane so that smoother and higher-quality polycrystalline silicon film was obtained which is suitable for future monolithic three dimensional (3D) stacked integration processes.

关键词： Films Annealing Lattices Rough surfaces Surface roughness Three-dimensional displays Grain size

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A novel insight into transient behaviors of diode-triggered SCRs under VF-TLP testing by 2D/3D simulations

A novel insight into transient behaviors of diode-triggered ...

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IEEE International Nanoelectronics Conference (INEC)

作者： Lizhong Zhang Yuan Wang Yandong He Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing

Transient behaviors of the diode-triggered silicon controlled rectifiers (DTSCRs) under very-fast transmission line pulse (VF-TLP) testing are investigated in this paper. The underlying physics needs to be comprehensively investigated and 2D/3D device simulations are well performed and compared. Analysis uncovers that the turn-on process of intrinsic SCR is ascribed to Darlington effect as well as junction breakdown.

关键词： Thyristors Junctions Electrostatic discharges Testing Anodes Performance evaluation

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Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

Design and Optimization of Four-Region Multistep Field Limit...

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IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Ben Tan Xiao-Li Tian Jiang Lu Yun Bai Xiao-Chuan Deng Cheng-Zhan Li Xin-Yu Liu High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China The State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu China ZhuZhou CRRC Times Electric Co. Ltd ZhuZhou China

A novel edge termination structure with Four-Region Multistep Field Limiting Rings (FRM-FLRs) is proposed and investigated for lOkV 4H-SiC IGBTs. The structure with FRM-FLRs terminal technology exhibits a good blocking performance with 30% less terminal area and 23% higher blocking voltage compared with the conventional Filed limiting Rings (Con-FLRs) structure. Moreover, the structure with FRM-FLRs can decrease the sensitivity of the interface charges, which greatly improves the reliability of the device at the off-state.

关键词： proposed investigated lOkV

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Vertical Transistors: Analog Circuit Applications Based on Ambipolar Graphene/MoTe2Vertical Transistors (Adv. Electron. Mater. 3/2018)

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Advanced Electronic Materials 2018年第3期4卷

作者： Chen Pan Yajun Fu Jiaxin Wang Junwen Zeng Guangxu Su Mingsheng Long Erfu Liu Chenyu Wang Anyuan Gao Miao Wang Yu Wang Zhenlin Wang Shi-Jun Liang Ru Huang Feng Miao National Laboratory of Solid State Microstructures School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China School of Material Science and Engineering Southwest University of Science and Technology Mianyang 621010 China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

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Neuromorphic Computing: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics (Adv. Mater. 21/2018)

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Advanced Materials 2018年第21期30卷

作者： Jiadi Zhu Yuchao Yang Rundong Jia Zhongxin Liang Wen Zhu Zia Ur Rehman Lin Bao Xiaoxian Zhang Yimao Cai Li Song Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China National Synchrotron Radiation Laboratory CAS Center for Excellence in Nanoscience University of Science and Technology of China Hefei Anhui 230029 China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China

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Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors

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Physical Review B 2017年第16期96卷 165205-165205页

作者： Nianduan Lu Nan Gao Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroElectronics of the Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing 100029 China and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

Based on the extended variable range hopping mechanism in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the magnetoresistivity on temperature, carrier density, magnetic field, and electric field. Experimental electric-field and temperature characteristics in device based on organic semiconductors are excellently reproduced with this unified description of the magnetoresistivity. We further show that the spin transport indeed can be explained by the fact that magnetic field will decrease the density of transport states and similar to the decrease of carrier density without it. We finally demonstrate that magnetoresistivity is strongly dependent on the carrier density; by changing the carrier density in the hopping system, the magnetoresistivity can increase more than 500 times.

关键词： Electric field effects Magnetoresistance Organic electronics Disordered systems Organic semiconductors

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Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life

Layout dependent BTI and HCI degradation in nano CMOS techno...

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IEEE International Conference on Integrated Circuit Design and Technology (ICICDT)

作者： Pengpeng Ren Runsheng Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781509003211

In this paper, the newly-found time-dependent layout dependent effects (LDE) due to layout dependency of device aging is presented. BTI and HCI degradation in nanoscale HKMG devices exhibits evident layout dependency, which will significantly complicate the circuit design. With the analysis on circuit level, the time-dependent LDE should be considered to ensure enough design margin, especially at end of life. This work is helpful to design-technology co-optimization at nanoscale nodes.

关键词： Layout Delays Aging Human computer interaction Degradation Nanoscale devices Reliability

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A novel low-power and high-speed dual-modulus prescaler based on extended true single-phase clock logic

A novel low-power and high-speed dual-modulus prescaler base...

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International Symposium on circuits and Systems

作者： Song Jia Ziyi Wang Zijin Li Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9781479953424

A novel low-power and high-speed dual-modulus prescaler based on extended true single-phase clock (E-TSPC) scheme is presented. By restricting the short-circuit current in noncritical branchs, the design reduces the major source of power dissipation in E-TSPC scheme. The presented design enhances the maximum working frequency with shorter critical path and lower load capacitances. Simulation results in SMIC 40nm process show that compared with referenced E-TSPC based designs at least 61.2% (divide-by-2) and 41.1% (divide-by-3) reduction in power delay product (PDP) can be achieved by the proposed design.

关键词： short-circuit power E-TSPC prescaler critical path

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Aharonov-Bohm effect in monolayer phosphorene nanorings

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Physical Review B 2017年第12期95卷 125418-125418页

作者： Rui Zhang Zhenhua Wu X. J. Li Kai Chang SKLSM Institute of Semiconductors Chinese Academy of Sciences 100083 Beijing China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences 100049 Beijing China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China College of Physics and Energy Fujian Normal University 350007 Fuzhou China

This work presents a theoretical demonstration of the Aharonov-Bohm (AB) effect in monolayer phosphorene nanorings (PNRs). Atomistic quantum transport simulations of PNRs are employed to investigate the impact of multiple modulation sources on the sample conductance. In the presence of a perpendicular magnetic field, we find that the conductance of both armchair and zigzag PNRs oscillate periodically in a low-energy window as a manifestation of the AB effect. Our numerical results reveal a giant magnetoresistance (MR) in zigzag PNRs (with a maximum magnitude approaching 2000%). It is attributed to the AB-effect-induced destructive interference phase over a wide energy range below the bottom of the second subband. We also demonstrate that PNR conductance is highly anisotropic, offering an additional way to modulate MR. The giant MR in PNRs is maintained at room temperature in the presence of the thermal broadening effect.

关键词： Ballistic transport Electrical conductivity Magnetoelectric effect Magnetotransport Semiconductors Transport phenomena

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