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arXiv 2017年

作者： Li, X.J. Yu, J.H. Wu, Z.H. Yang, W. College of Physics and Energy Fujian Normal University Fuzhou350117 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Computational Science Research Center Beijing100094 China

We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in a monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene magnetic superlattice (PMS) orientations can give rise to distinct energy spectra, i.e., tuning the intrinsic electronic anisotropy. The Rashba spin-orbit coupling (RSOC) will develop a spin-splitting energy dispersion in this phosphorene magnetic supperlattice. Anisotropic momentum-dependent carrier distributions along/perpendicular to the magnetic strips are demonstrated, and the manipulations of these exotic properties by tuning superlattice geometry, magnetic field and the RSOC term (via an external electric field) are addressed systematically. Accordingly, we find bright-to-dark transitions in the ground state electron-hole pairs transition rate spectrum and PMS orientation dependent anisotropic optical absorption spectrum. This feature offers us a practical way to modulate the electronic anisotropy in phosphorene by magnetic superlattice configurations and detect these modulation capability by using the optical technique. Copyright © 2017, The Authors. All rights reserved.

关键词： Monolayers

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Structural optimization of 4H-SiC BJT for ultraviolet detection with high optical gain 16th

Structural optimization of 4H-SiC BJT for ultraviolet detect...

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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

作者： Bai, Yun Li, Cheng Zhan Shen, Hua Jun Tang, Yi Dan Liu, Xin Yu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD ZhuzhouHunan China

ISBN: (纸本)9783035710427

The 4H-SiC n-p-n BJT for ultraviolet detection with high optical gain is proposed and optimized in this paper. The effect of structural parameters of 4H-SiC phototransistor on the performance of the detectors is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC phototransistors detect UV light with a response wavelength below 380 nm. It is suggested that the base parameters are important to the responsivity of the 4H-SiC BJT. With optimized parameters the 4H-SiC UV phototransistor exhibits peak responsivity as high as 4617 A/W corresponding to a quantum gain of 2.2×105 under the bias voltage of 5 V. © 2016 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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Design and optimization of AlGaN solar-blind double Heterojunction ultraviolet phototransistor 16th

Design and optimization of AlGaN solar-blind double Heteroju...

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16th International Conference on Silicon Carbide and Related Materials, ICSCRM 2015

作者： Bai, Yun Shen, Huajun Li, Chengzhan Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Microwave Devices and Integrated Circuits Department The Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China

ISBN: (纸本)9783035710427

The n-p-i-n AlGaN solar-blind ultraviolet double heterojunction phototransistor (DHPT) with internal gain is proposed and optimized in this paper. The dependences of spectral responsivity and quantum gain on structure parameters of the AlGaN DHPT are simulated in detail. Then, the polarization effect of AlGaN heterojunction on the performance of AlGaN DHPT is also investigated. Results show that positive polarization charge would enhance the photoresponse of the device, whereas the negative polarization charge would reduce the photoresponse significantly. The reasons for the polarization effect on performance of AlGaN DHPT are discussed. © 2016 Trans Tech Publications, Switzerland.

关键词： Phototransistors

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A wafer-level characterization method of ESD protection circuits for both component-level and system-level applications

A wafer-level characterization method of ESD protection circ...

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Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC)

作者： Yuan Wang Guangyi Lu Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing P.R. China

Electrostatic discharge (ESD) protection circuits are often designed with detection circuits to trigger clamp devices to bypass ESD currents. In order to fully characterize performance of these protection circuits, a wafer-level characterization method is proposed in this work. By separating the detection rail from the supply rail, triggering actions resulted from detection circuits can be clearly captured by the proposed method. Besides, both the component-level triggering criteria and system-level transient-induced latch-up (TLU) immunity of ESD protection circuits can be fully characterized by the proposed method. Silicon-data based case studies are presented in this work to verify the validity of the proposed method.

关键词： Capacitance Levee

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A 93.7% peak efficiency DC-DC buck converter with all-pass network based passive level shifter in 55 nm CMOS

A 93.7% peak efficiency DC-DC buck converter with all-pass n...

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International Symposium on circuits and Systems

作者： Xiucheng Hao Fan Yang Mingxiao He Yongan Zheng Ying Guo Huailin Liao Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781479953424

This paper proposes a DC-DC buck converter with all-pass network based passive level shifter in 55nm standard CMOS process, for battery powered portable applications. In order to handle high battery voltages in this advanced standard CMOS process, a passive level shifter based on all-pass network is applied for gate oxide protection. Drain extension is proposed to obtain high breakdown voltage of active region. The proposed buck converter with the passive level shifter works in DCM operation as its load current varies from 0.1-10mA. The buck converter achieves a peak efficiency of 93.7% and 83.8% at 10mA load current, with a supply voltage of 1.8V and 3.7V, respectively.

关键词： all-pass network CMOS DC-DC buck converter passive level shifter battery powered portable applications high peak efficiency

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Optimized spin-injection efficiency and spin MOSFET operation based on low-barrier ferromagnet/insulator/n-Si tunnel contact

arXiv

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arXiv 2017年

作者： Yang, Yang Wu, Zhenhua Yang, Wen Li, Jun Chen, Songyan Li, Cheng Department of Physics Semiconductor Photonics Research Center Xiamen University Xiamen361005 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Computational Science Research Center Beijing100089 China

We theoretically investigate the spin injection in different FM/I/n-Si tunnel contacts by using the lattice NEGF method. We find that the tunnel contacts with low barrier materials such as TiO2 and Ta2O5, have much lower resistances than the conventional barrier materials, resulting in a wider and attainable optimum parameters window for improving the spin injection efficiency and MR ratio of a vertical spin MOSFET. Additionally, we find the spin asymmetry coefficient of TiO2 tunnel contact has a negative value, while that of Ta2O5 contact can be tuned between positive and negative values, by changing the parameters. Copyright © 2017, The Authors. All rights reserved.

关键词： MOSFET devices

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A New Static Power Clamp Co-designed with Input ESD Protection Circuit

A New Static Power Clamp Co-designed with Input ESD Protecti...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Jian Wang Jian Cao Guangyi Lu Xing Zhang Yuan Wang School of Software and Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University

A new static power clamp circuit integrated with input ESD protection is proposed in this paper. By skillfully incorporating traditional input ESD protection, the proposed circuit replaces the protection resistor by the active switch and merging the signal control circuit into trigger circuit of static power clamp. The proposed circuit is a whole-chip ESD protection scheme that has a low leakage and the excellent ESD performance.

关键词：

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Investigation of thermal stability of TiN/O3-Al2O3/GaN metal-oxide-semiconductor diodes with 2 nm H2O-Al2O3 as oxide/III-nitride interfacial layer 31

Investigation of thermal stability of TiN/O3-Al2O3/GaN metal...

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31st Annual International Conference on Compound Semiconductor Manufacturing Technology, CS ManTech 2016

作者： Bao, Qilong Huang, Sen Wang, Xinhua Wei, Ke Xiang, Jinjuan Chai, Shumin Wang, Xiaolei Li, Yankui Guo, Shiping Li, Junfeng Liu, Xinyu Zhao, Chao Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Advanced Micro-Fabrication Equipment Inc. Shanghai201201 China

Interface property of O3-sourced ALD grown Al2O3 is systematically investigated with various thermal processing temperature. It is revealed that TiN/Al2O3/GaN MOS diodes exhibit good insulating behavior with post-metal-annealing (PMA) from 400°C to 700°C, while its leakage current becomes larger at higher PMA temperature (800°C). Temperature dependent acconductance measurement detects a relatively low density (1-3×1012 cm-2eV-1) of shallow interface traps (0.28 eVC-ET2O3/GaN interface, while an increased density of deep traps (EC-ET>0.6 eV), which are suspected to be border traps, are created at high PMA temperature (>700°C). High-resolution TEM analyses reveal the Al2O3 layer in the MOS diodes would crystalize at high PMA temperature. It could be the probable cause for the increased leakage current and formation of border traps. © 2016, CS Mantech. All rights reserved.

关键词： Aluminum oxide

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Delay-locked loop based frequency quadrupler with wide operating range and fast locking characteristics

Delay-locked loop based frequency quadrupler with wide opera...

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International Symposium on circuits and Systems

作者： Yuan Wang Yuequan Liu Mengyin Jiang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University 100871 Beijing P.R. China

ISBN: (纸本)9781479953424

A wide operating range and fast locking delay-locked loop (DLL) based frequency quadrupler that includes an eight-phase-clock generator and an edge combiner is proposed. The eight-phase-clock generator is composed of a coarse-code generator, a fine-code generator and a digital controlled delay line, which uses four differential delay units to generate equally spaced eight-phase clocks. The coarse-code generator adopts a time-to-digital scheme to achieve short locking time and wide operating range. A fine-code digital-to-analog converter in the fine-code generator converts the fine codes to analog voltage for high precision. Moreover, the novel edge-combiner circuit combines the eight-phase clocks to ×4 frequency output with 50% duty cycle ratio. Experimental results in a 65-nm CMOS process show this frequency multiplier can cover a frequency range from 320 MHz to 2.4 GHz and cost 5～40 cycles to finish locking.

关键词： fast locking quadrupler delay-locked loop (DLL) eight-phase-clock generator edge-combiner wide operating range

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A novel low-leakage power-rail ESD clamp circuit with adjustable triggering voltage and superior false-triggering immunity for nanoscale applications

A novel low-leakage power-rail ESD clamp circuit with adjust...

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International Symposium on circuits and Systems

作者： Guangyi Lu Yuan Wang Jian Cao Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing 100871 P.R. China

ISBN: (纸本)9781479953424

This work presents a novel power-rail electrostatic discharge (ESD) clamp circuit for nanoscale applications. By skillfully incorporating transient and static ESD detection mechanisms into its detection circuit, the proposed circuit achieves a wide range of adjustable triggering voltage (Ft1) while maintaining low standby leakage current (Ileak). Besides, the proposed circuit achieves significantly-improved false-triggering immunity compared with the transient-triggered circuit. All investigated circuits are fabricated in a 65-nm CMOS process. Simulation and test results have both confirmed the superiority of the proposed circuit. In addition, the proposed circuit achieves similar triggering behaviors in both transmission line pulsing (TLP) and very fast TLP (VF-TLP) tests.

关键词： transmission line pulsing (TLP) test Electrostatic discharge (ESD) detection circuit triggering voltage (Vt1) leakage current (Ileak)

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