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2016 IEEE Information Technology,Networking,Electronic and Automation Control Conference(ITNEC 2016)

作者： Zhuo Zhang Yacong Zhang Miaomiao Fan Meng Zhao Dahe Liu Wengao Lu Zhongjian Chen Peking University Shenzhen Graduate School Key Laboratory of Microelectronic Devices and Circuits Institute of Micro & Nano ElectronicsPeking University Beida (Binhai) Information Research

ISBN: (纸本)9781467391955

this paper presents a low-power 14-bit hybrid incremental Σ-Δ/cyclic analog-to-digital converter(ADC) based on pseudo-differential operational amplifier, which is designed for the readout circuit of infrared focal plane array *** two-stage hybrid ADC employs an incremental sigma-delta ADC and a cyclic ADC, achieving a good trade-off between accuracy and conversion speed. The two stages share the same analog circuit to reduce area and power consumption. A common-mood feedback module is used to suppress the influence of charge injection, and the effectiveness is demonstrated by detailed theoretical analysis and simulation result. A test chip is fabricated in 0.18 μm CMOS technology. The hybrid ADC in each column is performed in parallel with power consumption of218.813 μW. The simulation result reveals the effective number of bits(ENOB) is 13.775 bits.

关键词： hybrid ADC incremental sigma-delta cyclic low power infrared array detector

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A physics-based compact model for material- and operation-oriented switching behaviors of CBRAM

A physics-based compact model for material- and operation-or...

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International Electron devices Meeting (IEDM)

作者： Y. D. Zhao J. J. Hu P. Huang F. Yuan Y. Chai X. Y. Liu J. F. Kang Institute of Microelectronics Peking University Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Innovation Center for MicroNanoelectronics and Integrated System Beijing China Department of Applied Physics The Hong Kong Polytechnic University Hong Kong China

ISBN: (纸本)9781509039036

A physics-based compact model is developed to capture the essential resistive switching behaviors of conductive-bridge random access memory (CBRAM) under DC and AC operations. Three types of evolution modes of conductive filament correlated with material properties and operation schemes are modeled based on experimental observations. By modeling the temperature and electric-field effects as well as the electrical conduction, the model can well reproduce the DC and AC switching characteristics in different material stacks and operation modes. The calibrated model can be further implemented into SPICE to evaluate and optimize the array performance of CBRAM as a device-circuit-system co-design tool.

关键词： Mathematical model Switches Metals Oxidation Geometry Electric fields Data models

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Correction: A review of carrier thermoelectric-transport theory in organic semiconductors

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Physical chemistry chemical physics : PCCP 2017年第24期19卷 16283页

作者： Nianduan Lu Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroElectronics of the Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing 100029 China. lingli@***.

Correction for 'A review of carrier thermoelectric-transport theory in organic semiconductors' by Nianduan Lu et al., Phys. Chem. Chem. Phys., 2016, 18, 19503-19525.

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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

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Advanced Materials 2018年第14期30卷

作者： Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Department of Nuclear Engineering Texas A&M University College Station TX 77843 USA Materials Science and Technology Division Los Alamos National Laboratory Los Alamos NM 87545 USA

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Effects of Si δ-Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures

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Chinese Physics Letters 2015年第9期32卷 112-115页

作者：周书星齐鸣艾立鹍徐安怀汪丽丹丁芃金智 State Key Laboratory of Functional Materials for lnformatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 Microveave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

The InGaAs/InAIAs/InP high electron mobility transistor （HEM：F） structures with lattice-matched and pseudo- morphic channels are grown by gas source molecular beam epitaxy. Effects of Si ^-doping condition and growth interruption on the electrical properties are investigated by changing the Si-cell temperature, doping time and growth process. It is found that the optimal Si ^-doping concentration （Nd） is about 5.0 x 1012 cm-2 and the use of growth interruption has a dramatic effect on the improvement of electrical properties. The material structure and crystal interface are analyzed by secondary ion mass spectroscopy and high resolution transmission elec- tron microscopy. An InGaAs/InAiAs/InP HEMT device with a gate length of lOOnm is fabricated. The device presents good pinch-off characteristics and the kink-effect of the device is trifling. In addition, the device exhibits fT = 249 GHa and fmax 〉 400 GHz.

关键词： InP InGaAs Doping Condition and Growth Interruption on Electrical Properties of InP-Based High Electron Mobility Transistor Structures Effects of Si

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Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime

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Physical Review B 2016年第7期94卷 075201-075201页

作者： Nan Gao Ling Li Nianduan Lu Changqing Xie Ming Liu Heinz Bässler Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Bayreuth Institute of Macromolecular Research (BIMF) University of Bayreuth D-95440 Bayreuth Germany

The fact that in organic semiconductors the Hubbard energy is usually positive appears to be at variance with a bipolaron model to explain magnetoresistance (MR) in those systems. Employing percolation theory, we demonstrate that a moderately positive U is indeed compatible with the bipolaron concept for MR in unipolar current flow, provided that the system is energetically disordered, and the density of states (DOS) distribution is partially filled, so that the Fermi level overlaps with tail states of the DOS. By exploring a broad parameter space, we show that MR becomes maximal around U=0 and even diminishes at large negative values of U because of spin independent bipolaron dissociation. Trapping effects and reduced dimension enhance MR.

关键词： Magnetoresistance Polarons Organic semiconductors Percolation theory

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A Leakage Tolerant True Single-Phase Clock Dual-Modulus Prescaler Scheme

A Leakage Tolerant True Single-Phase Clock Dual-Modulus Pres...

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Asia-Pacific Microwave Conference

作者： Song Jia Ziyi Wang Shilin Yan Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

ISBN: (纸本)9781479987689

A new leakage-tolerant true single-phase clock dual-modulus prescaler based on a stage-merged scheme is presented. Leakage-restricting transistors are used to reduce the leakage currents at critical nodes and leakage-related malfunctions are eliminated at minimal cost in terms of speed, power and area overheads. An HSPICE simulation in a 40 nm process shows that the proposed divide-by-2/3 divider can effectively enhance robustness against leakage currents to extend the low frequency limit of the circuit over wide temperature and threshold voltage ranges. Additionally, the proposed design shows speed and power performance that is comparable to the performance levels of referenced designs.

关键词： Leakage currents Transistors Performance evaluation Clocks Phase locked loops Robustness Frequency conversion

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Fabricating GeO_2 passivation layer by N_2O plasma oxidation for Ge NMOSFETs application

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Chinese Physics B 2014年第6期23卷 538-541页

作者：林猛安霞黎明云全新李敏李志强刘朋强张兴黄如 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

In this paper, oxidation of Ge surface by N2O plasma is presented and experimentally demonstrated. Results show that 1.0-nm GeO2 is achieved after 120-s N20 plasma oxidation at 300 ℃. The GeO2/Ge interface is atomically smooth. The interface state density of Ge surface after N20 plasma passivation is about - 3 × 1011 ***-1. With GeO2 passivation, the hysteresis of metal-oxide-semiconductor （MOS） capacitor with A1203 serving as gate dielectric is reduced to - 50 mV, compared with - 130 mV of the untreated one. The Fermi-level at GeO2/Ge interface is unpinned, and the surface potential is effectively modulated by the gate voltage.

关键词： Ge GeO2 passivation N2O plasma oxidation Ge NMOSFETs

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Impacts of Dimensions, Number of Layers and Contact Structures on the Loss of Graphene-based Coplanar Waveguides through Simulations

Impacts of Dimensions, Number of Layers and Contact Structur...

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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Qiaofeng Qin Zidong Wang Yuehui Jia Pei Peng Xin Gong Liming Ren Yunyi Fu Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

We present modeling and simulations of graphene coplanar waveguide(GCPW) under the frequency up to 50 GHz. Our simulation results show that the dimensions of GCPW greatly influence its insertion loss. In addition, different graphene layer numbers and structures of graphene-metal contact were also considered. We show that the usage of few-layer graphene and end-contact structure is able to decrease the insertion loss, which helps improve the radio-frequency performance of graphene coplanar waveguide.

关键词： Graphene coplanar waveguide Simulation Insertion loss Few-layer graphene Contact structure

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A high frequency resolution digitally controlled oscillator with differential tapped inductor

A high frequency resolution digitally controlled oscillator ...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Fan Yang Runhua Wang Xiaozhe Liu Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing Beijing CN

ISBN: (纸本)9781479983926

A novel architecture of high frequency resolution LC-tank based digitally controlled oscillator (DCO) is presented in this paper. The proposed architecture utilizes a differential tapped inductor and a capacitor array within the taps for fine frequency tuning. A prototype of 1.6 GHz DCO integrated in 0.18-μm CMOS technology exhibits a tuning range of 40.2% and a phase noise of -123.6 dBc/Hz@1MHz. With a minimal capacitance step of 7.5 fF, the frequency resolution is improved to 7.6 kHz/LSB. The DCO dissipates 3.2 mA from a 1.8 V supply and occupies an area of 0.46 mm 2 .

关键词： Inductors Capacitors Tuning Capacitance Arrays Phase noise

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