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Experimental clarification of orientation dependence of germanium PMOSFETs with Al_2O_3/GeO_x/Ge gate stack

Chinese Physics B 2014年第11期23卷 626-629页

作者：云全新黎明安霞林猛刘朋强李志强张冰馨夏宇轩张浩张兴黄如王阳元 Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

An extensive and complete experimental investigation with a full layout design of the channel direction was carried out for the first time to clarify the orientation dependence of germanium p-channel metal-oxide-semiconductor field-effect transistors （PMOSFETs）. By comparison of gate trans-conductance, drive current, and hole mobility, we found that the performance trend with the substrate orientation for Ge PMOSFET is （110）〉（111） ~ （100）, and the best channel direction is （110）/[110]. Moreover, the （110） device performance was found to be easily degraded as the channel direction got off from the [ 110] orientation, while （100） and （111） devices exhibited less channel orientation dependence. This experimental result shows good matching with the simulation reports to give a credible and significant guidance for Ge PMOSFET design.

关键词： germanium metal-oxide-semiconductor field-effect transistor orientation

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Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

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Chinese Physics B 2014年第11期23卷 616-619页

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.

关键词： germanium roughness interface trap density interfacial layer thickness

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A Low-Power High-Speed 32/33 Prescaler Based on Novel Divide-by-4/5 Unit with Improved True Single-Phase Clock Logic

A Low-Power High-Speed 32/33 Prescaler Based on Novel Divide...

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IEEE International Symposium on circuits and Systems

作者： Song Jia Shilin Yan Yuan Wang Ganggang Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 CHINA

ISBN: (纸本)9781479983926

In this work, new design techniques that aim to reduce power consumption of true single-phase clock-based (TSPC) prescalers is presented. The structure of divide-by-4/5 frequency divider is simplified, and its performance is compared with previous work to demonstrate the improvement. Simulation results show at least a 25% reduction of power consumption is achieved by the proposed unit. In the 32/33 dual modulus prescaler, a critical path cutting scheme is introduced to improve speed to the limit decided by the divide-by-4/5 unit.

关键词： TSPC prescaler frequency divider

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Graphene: Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer (Small 35/2017)

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Small 2017年第35期13卷

作者： Xiaolong Zhao Sen Liu Jiebin Niu Lei Liao Qi Liu Xiangheng Xiao Hangbing Lv Shibing Long Writam Banerjee Wenqing Li Shuyao Si Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University Wuhan 430072 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

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Human body channel energy harvesting scheme with −22.5 dBm sensitivity 25.87% efficiency threshold-compensated rectifier

Human body channel energy harvesting scheme with −22.5 dBm ...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Jiayi Wang Yongan Zheng Shi Wang Maoqiang Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781479983926

A novel human body channel (HBC) energy harvesting scheme for body sensor networks (BSNs) is proposed in this paper. Human body channel is utilized innovatively as energy transmission medium to reduce the transmission loss dramatically and eliminate influence of shadow effect. Further, a high sensitivity and efficiency rectifier is presented by introducing an effective threshold compensation circuit. Experimental results of the energy harvesting scheme show that it can supply 2-μW power typically at -5 dBm transmitted power and up to 19.5-μW at +7 dBm transmitted power by 30 cm distance of human body channel. The sensitivity of the proposed rectifier is -22.5 dBm with 1-V output voltage. When offering 5-μA output current, the rectifier can achieve 25.87% efficiency. The rectifier is implemented in a standard 0.18-μm CMOS process and operating frequency is 145 MHz.

关键词： Rectifiers Energy harvesting Propagation losses Sensitivity Batteries Threshold voltage CMOS integrated circuits

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Study on geometry of silicon PIN radiation detector for breakdown voltage improvement

Study on geometry of silicon PIN radiation detector for brea...

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作者： Liu, Hong-Zhi Yu, Min Shi, Bao-Hua Qi, Lin Wang, Shao-Nan Hu, An-Qi Du, Hong Wang, Jin-Yan Jin, Yu-Feng Yang, Bing National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing100871 China Department of Microelectronics College of Information Engineering North China University of Technology Beijing100144 China

The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Ω cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 μm to 260 μm. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 μm to 500 μm. Copyright © 2015 Inderscience Enterprises Ltd.

关键词： Electric breakdown

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A 0.5-2 GHz High Frequency Selectivity RF Front-End with Series N-path Filter

A 0.5-2 GHz High Frequency Selectivity RF Front-End with Ser...

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IEEE International Symposium on circuits and Systems

作者： Ying Guo Ling Shen Fan Yang Yongan Zheng Long Chen Xing Zhang Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781479983926

This paper presents a 0.5-2GHz RF front-end with Series N-path Filter. With series 8-path filter applied, an ultimate rejection larger than 46 dB with 30 dB out-of-band rejection at 50 MHz offset is achieved. Dynamic power consumption is saved due to small filter switch size compared with parallel structures. Utilizing a tunable narrow band LNA in front of series N-path filter, 3rd harmonic rejection exceeding 54 dB with robust to process variation is realized. These techniques improve the front-end's adjacent and far-end frequency selectivity in RF domain, relaxing mixer's linearity design pressure. Implemented in 65 nm CMOS process, the frontend achieves a NF of 2.6-5.7 dB and maximum gain of 46-60 dB at 0.5-2 GHz, consuming 18-26 mW from 1.2 V voltage supply and occupies an area of 0.56 mm~2.

关键词： RFfront-end series N-path filter blocker tolerance frequency selectivity harmonic rejection multi-band receiver

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A Wide Band CMOS Radio Frequency RMS Power Detector with 42-dB Dynamic Range

A Wide Band CMOS Radio Frequency RMS Power Detector with 42-...

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IEEE International Symposium on circuits and Systems

作者： Jiayi Wang Yongan Zheng Fan Yang Fan Tian Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781479983926

A wide band radio frequency (RF) root-mean-square (RMS) power detector (PD) is presented in this paper. A CMOS rectifier with unbalanced source-coupled pairs and auxiliary capacitors is utilized to constitute the reverse received signal strength indicator (reverse-RSSI) architecture as proposed power detector with operating frequency from 300 MHz to 10 GHz. The auxiliary capacitors are introduced to improve linearity at high input power dramatically. The power detector can be connected to power amplifier without directional coupler due to the capacitor attenuation array. Simulation results show that the maximum detection power is as high as +30 dBm and dynamic range reaches more than 42 dB with ±1 dB error. The proposed power detector is implemented in a standard 180nm CMOS process with 0.113 mm~2 core area. The supply voltage is 3.3 V, and its static power consumption is 0.55 mW.

关键词： Detectors Rectifiers Capacitors Attenuation Radio frequency CMOS integrated circuits Arrays

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Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices 16th

Low-frequency noise spectroscopy of bulk and border traps in...

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16th International Conference on Gettering and Defect Engineering in Semiconductor Technology, GADEST 2015

作者： Simoen, Eddy Cretu, Bogdan Fang, Wen Aoulaiche, Marc Routoure, Jean-Marc Carin, Regis Luo, Jun Zhao, Chao Claeys, Cor Imec Kapeldreef 75 LeuvenB-3001 Belgium Depart. of Solid-State Sciences Ghent University Gent9000 Belgium ENSICAEN UMR 6072 GREYC CaenF-14050 France Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Micron Technology Belgium Imec Campus Belgium University of Caen UMR 6072 GREYC CaenF-14050 France E.E. Dept KU Leuven Leuven Belgium

ISBN: (纸本)9783038356080

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deeplevel parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude. © (2016) Trans Tech Publications, Switzerland.

关键词： MOSFET devices

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Understanding of HCI degradation temperature dependence in SOI STI-pLDMOSFETs from MR-DCIV spectroscopy

Understanding of HCI degradation temperature dependence in S...

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International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P.R. China

Temperature dependence of HCI degradation in SOI STI-pLDMOSFETs had been investigated by MR-DCIV method. The temperature-driven interface trap generation was clearly revealed under V gmax HCI and NBTI stress for single/multi-finger layout device. The self-heating-enhanced degradation was associated with the interface trap generation in channel and accumulation regions and shared NBTI degradation mechanism.

关键词： Decision support systems

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