检索结果-内蒙古大学图书馆

International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P.R. China

Temperature dependence of HCI degradation in SOI STI-pLDMOSFETs had been investigated by MR-DCIV method. The temperature-driven interface trap generation was clearly revealed under V gmax HCI and NBTI stress for single/multi-finger layout device. The self-heating-enhanced degradation was associated with the interface trap generation in channel and accumulation regions and shared NBTI degradation mechanism.

关键词： Decision support systems

来源：评论

学校读者我要写书评

暂无评论

Self-heating enhanced HCI degradation in pLDMOSFETs

Self-heating enhanced HCI degradation in pLDMOSFETs

引用

International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P. R. China

ISBN: (纸本)9781479962624

The interface trap generation under V gmax HCI stresses in pLDMOSFETs has been studied using non-destructive multi-region direct-current current-voltage (MR-DCIV) technique. Several times larger MR-DCIV degradation per finger was observed for multi-finger devices. Folded-gate layout device suffered more self-heating induced degradation. Our study results reveal that those effects shared the similar trends and mechanism with NBTI degradation. The self-heating enhanced degradation in multi-finger devices was due to the higher temperature rise and less channel edge heat dissipation. The impact of device layout on the HCI degradation has also been investigated. Our results suggested that the unfolded device layout can reduce self-heating enhanced V gmax HCI degradation.

关键词： Stress Degradation Human computer interaction Fingers Layout Logic gates Voltage measurement

来源：评论

学校读者我要写书评

暂无评论

Novel silicon-controlled rectifier(SCR) for digital and high-voltage ESD power supply clamp

引用

Science China(Information Sciences) 2014年第2期57卷 291-296页

作者： ZHANG Peng WANG Yuan ZHANG Xing MA XiaoHua HAO Yue Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Due to latch-up issue,the main problem of silicon-controlled rectifier(SCR)for power supply clamps in on-chip ESD protection is its inherent low holding voltage,especially in high-voltage *** this paper,we proposed a MOS-inside SCR(MISCR)showing nearly no snapback character and good ESD robustness,which is qualified for on-chip power clamp ESD *** stacked device achieves a series of triggering and holding voltage by altering the stacking number,which can also be used for the high voltage ESD power supply clamp applications.

关键词： electrostatic discharge(ESD) SCR latch-up immunity holding voltage power supply clamp high voltage

来源：评论

学校读者我要写书评

暂无评论

180.5Mbps-8Gbps DLL-Based Clock and Data Recovery Circuit with Low Jitter Performance

180.5Mbps-8Gbps DLL-Based Clock and Data Recovery Circuit wi...

引用

IEEE International Symposium on circuits and Systems

作者： Yuequan Liu Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University 100871 Beijing P.R. China

ISBN: (纸本)9781479983926

A wide range delay-locked loop (DLL) based clock and data recovery (CDR) circuit including coarse and fine tune blocks is proposed in this paper. The coarse tune block adopts a time to digital converter and digital control delay line to widen the frequency capture range, reduce locking time and prevent the false locking problem. In the fine tune block, a novel phase detector combines the tasks of sampling and charge-pump using half rate clock. Starting-control circuit can ensure CDR takes full use of the delay range provided by voltage control delay line. Moreover, a fully analog DLL technique is applied to exploit the benefits of low skew and jitter performance. The simulation result shows the proposed CDR can cover a wide frequency range from 180.5Mbps to 8Gbps, while the peak-to-peak jitter of recovery clock is 2.7ps at 200Mbps and 1.06ps at 8Gbps. Fabricated in a 65nm CMOS process, this design dissipates 9.9mW and 22.9mW respectively at 200 Mbps and 8Gbps from a 1.2 V supply.

关键词： Clock and data recovery (CDR) wide-range delay-locked loop (DLL) low jitter time-to-digital converter (TDC)

来源：评论

学校读者我要写书评

暂无评论

Effect of annealing on the characteristics of Ti/Al ohmic contacts to p-Type 4H-SiC

Effect of annealing on the characteristics of Ti/Al ohmic co...

引用

European Conference on Silicon Carbide & Related Materials (ECSCRM)

作者： Yi-Dan Tang Hua-Jun Shen Xu-Fang Zhang Guo Fei Bai Yun Zhao-Yang Peng Xin-Yu Liu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×10 19 cm -3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10 -5 Ω/cm 2 and 7.81×10 -5 Ω/cm 2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H-SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti 3 SiC 2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H-SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti 3 SiC 2 is key factor for low resistance to P-type 4H-SiC. Moreover, simulations proved that the gradual Ti 3 SiC 2 ISL reduces or eliminates the effective barrier height at the metal/Ti 3 SiC 2 /p-type and may also contribute to low contact resistivity.

关键词： Ohmic contacts Silicon carbide Annealing X-ray scattering Temperature measurement Microstructure Metals

来源：评论

学校读者我要写书评

暂无评论

引用

Journal of Semiconductors 2015年第9期36卷 66-70页

作者：方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军赵超 Cor Claeys IMEC E.E. Depart. KU Leuven Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Graduate Institute of Photonics and Optoelectronics and Department of Electrical EngineeringNational Taiwan University Micron Technology Belgium IMEC Campus

This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.

关键词： random telegraph noise low frequency noise ultra-thin BOX silicon-on-insulator single charge trap

来源：评论

学校读者我要写书评

暂无评论

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (Adv. Electron. Mater. 8/2017)

引用

Advanced Electronic Materials 2017年第8期3卷

作者： Fei Hui Enric Grustan-Gutierrez Shibing Long Qi Liu Anna K. Ott Andrea C. Ferrari Mario Lanza Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nanoscience and Technology Soochow University 199 Ren-Ai Road Suzhou 215123 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China Cambridge Graphene Centre University of Cambridge Cambridge CB3 0FA UK

来源：评论

学校读者我要写书评

暂无评论

Phonon-Limited Electron Mobility in Single-Layer MoS2

引用

Chinese Physics Letters 2014年第2期31卷 101-104页

作者：曾琅辛争陈少闻杜刚康晋锋刘晓彦 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 Yuanpei College Peking University Beijing 100871

The dynamics of electron transport in single-layer MoS2 is simulated by employing the single particle Monte Carlo method. Acoustic phonon scattering, optical phonon scattering and Frohlich scattering are taken into account. It is found that the electron mobility decreases from 806cm2 /V.s for a transverse electrical field of 103 Vim to 426/112 cm2 /V.s for a transverse electrical field of 105/107 Vim. Further detailed analysis on carrier dynamics reveals that the low field mobility is dominated by the acoustic phonon scattering while the role of optical phonon scattering is to relax the electron energy below the optical phonon energy by efficient energy relaxation through optical phonon emission. Only when the transverse electrical field is larger than 106 V/m, the mobility can be determined by the optical phonon scattering, leading to a strong mobility degradation.

关键词： PHONONS -- Scattering ELECTRON mobility ELECTRON transport ELECTRIC fields PHONON emissions ACOUSTIC phonons

来源：评论

学校读者我要写书评

暂无评论

Experimental characterization of detecting and processing method for ECG applications

Experimental characterization of detecting and processing me...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Shi Wang Xiaozhe Liu Xiao Zhan Huailin Liao Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Beijing China Peking University Shenzhen Graduate School Shenzhen CHINA

This paper proposes a low-power precisely detecting method for electrical-cardiac signal and an efficient signal processing architecture. Traditionally, an impedance channel is designed separately as well as the ECG channel to eliminate the effects of motion-artifact which means more power consumption. The baseline drift and power-line disturbance can also effects signal quality and should be well controlled. In this design, a couple of electrodes and the front-end circuit are reused for both ECG and impedance signal detecting, so that the power-consumption is significantly reduced. Experimental results show that with this front-end architecture, the baseline drift is also well controlled and the power-line effect is reduced. With the proposed digital signal processing method, the location of QRS complexes are precisely detected, which is crucial for medical purpose.

关键词： Conferences Electron devices Solid state circuits

来源：评论

学校读者我要写书评

暂无评论

An ultra low power digital processor for Chinese UHF RFID transponder

An ultra low power digital processor for Chinese UHF RFID tr...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Xiaozhe Liu Yongan Zheng Ling Shen Yu Wu Junhua Liu Huailin Liao Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China Novchip Microelectronics Co. Ltd Wuxi Jiangsu China

An ultra low power digital baseband processor for passive UHF RFID tag which is compatible with the protocol of Chinese local standard (840-845 MHz and 920-925 MHz) is presented in this paper. A highly reused register bank and a low-cost sort algorithm are proposed to minimize the power consumption and several other low power techniques are adopted, including low supply voltage, clock gating, and minimum operation frequency. The processor is fabricated in SMIC 0.18 um standard CMOS process and consumes 358 nA at 0.6 V voltage supply according to measured results and occupies only 0.1 mm 2 area.

关键词： Conferences Electron devices Solid state circuits

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：