InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length...
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InA1As/InGaAs high electron mobility transistors （HEMTs） on an InP substrate with well-balanced cutoff frequency fT and maximum oscillation frequency frnax are reported. An InA1As/InGaAs HEMT with 100-nm gate length and gate width of 2 × 50 μm shows excellent DC characteristics, including full channel current of 724 mA/mm, extrinsic maximum transconductance *** of 1051 mS/mm, and drain-gate breakdown voltage BVDG of 5.92 V. In addition, this device exhibits fT = 249 GHz and fmax = 415 GHz. These results were obtained by fabricating an asymmetrically recessed gate and minimizing the parasitic resistances. The specific Ohmic contact resistance was reduced to 0.031 ***. Moreover, the fT obtained in this work is the highest ever reported in 100-nm gate length InA1As/InGaAs InP-based HEMTs. The outstanding ***, fT, fmax, and good BVDG make the device suitable for applications in low noise amplifiers, power amplifiers, and high speed circuits.
With the process compatibility with the mainstream standard complementary metal-oxide-semiconductor (CMOS), shallow trench isolation (STI) based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become...
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Formation and transfer of oxygen vacancies are essential to transitional metal oxide RRAM's switching behavior. In this paper, first principle is used to simulate the formation energy of oxygen vacancies in undope...
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In this paper, passivation of Ge substrates by N2O plasma is proposed and compared with a N2 plasma treatment. Results show that both N2O and N2 plasma treatments can improve the quality of the interface between the h...
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Single-nanoparticle detection with cylindrical and pyramidal-shaped nanopores was systematically studied using FEM (Finite Element Modeling) method simulations and terminal currents were obtained. The effects of pore ...
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ISBN:
(纸本)9781467366960
Single-nanoparticle detection with cylindrical and pyramidal-shaped nanopores was systematically studied using FEM (Finite Element Modeling) method simulations and terminal currents were obtained. The effects of pore size, length and the ratio of particle and pore diameter on the blocked current were discussed. Based on the obtained results, an optimal geometric dimension of nanopore for single-nanoparticle detection is suggested.
The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 c...
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The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.
The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific conta...
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The effect of the annealing time and annealing temperature on Ni/Ge/Au electrode contacts deposited on the n-type InP contact layer has been studied using a circular transmission line model. The minimum specific contact resistance of 3.210 7 cm2was achieved on the low-doped n-type InP contact layer with a 40 s anneal at 425 ℃. In order to improve the ohmic contact and reduce the difficulty in the fabrication of the high doped InP epi-layer, the doping concentration in the InP contact layer was chosen to be 51018cm 3in the fabrication of transferred electronic devices. Excellent differential negative resistance properties were obtained by an electron beam evaporating the Ni/Ge/Au/Ge/Ni/Au composite electrode on an InP epi-layer with a 60 s anneal at 380 ℃.
The strain effect on the electronic properties of bilayer tungsten disulfide (WS2) is investigated by density functional theory (DFT). It is found that the band gap and carrier effective masses of AA and AB stacking b...
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Circuit reliability issues have great attention to the researchers, especially bias temperature instability (BTI). Obviously, the threshold voltage of the device degraded when the MOS is in the stress mode. For CMOS d...
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