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Dehydroxylation action on surface of TiO_2 films restrained by nitrogen carrier gas during atomic layer deposition process

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Rare Metals 2014年第5期33卷 583-586页

作者： Zhi-Peng Rao Bang-Wu Liu Chao-Bo Li Yang Xia Jun Wan Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Jiaxing Research and Commercialization Center for Microelectronics Equipment Zhejiang Institute of Advanced Technology Chinese Academy of Sciences Jiaxing Kemin Electronic Equipment & Technologies Co. LtdZhejiang Institute of Advanced Technology Chinese Academy of Sciences

A strong influence of nitrogen gas on the content of surface hydroxyl groups of TiO2 films by atomic layer deposition（ALD） was investigated by X-ray photoelectron spectroscopy（XPS）, contact angle measuring system, and UV–Vis spectrophotometer. XPS spectra of O 1s indicate that the content of surface hydroxyl groups is varied when using N2 as carrier gas. The results of water contact angles and optical reflection spectra show that the content variation of surface hydroxyl groups influences the wetting properties and optical reflectivity of TiO2 films. A surface reaction model is suggested to explain the ALD reaction process using N2 as carrier gas.

关键词： Atomic layer deposition TiO2 N2 Surface hydroxyl groups XPS Reaction model

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An efficient test structure for interface trap characterization under BTI stresses

An efficient test structure for interface trap characterizat...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Yandong He Ganggang Zhang Lin Han Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing CHINA

ISBN: (纸本)9781479932849

An efficient test structure for interface trap density characterization has been proposed. Based on this single structure and one-time IV measurement, the interface trap densities on both n- and p-type Si/SiO 2 interfaces are obtained, achieving 1x efficiency improvement and 50% cost reduction. BTI-stress-induced degradation was studied and compared under the same structure, demonstrating a better test efficiency and resolution to interface traps generation at different Si/SiO 2 interfaces.

关键词： Logic gates Current measurement Area measurement Abstracts Performance evaluation Substrates Reliability

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A 192nW inverter-based chopper instrumentation amplifier for micropower ECG applications

A 192nW inverter-based chopper instrumentation amplifier for...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Shi Wang Yixiao Wang Long Chen Jiayi Wang Xiaozhe Liu Le Ye Ru Huang Huailin Liao Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781479932849

This paper proposes a low-power inverter-based chopper instrumentation amplifier (IA) for ECG applications. A capacitively-coupled topology with chopper is employed while a two-stage inverter-based amplifier serves as the gain stage. Pseudo resistors are introduced to stabilize the output common-mode voltage of the amplifier and an improved switch-capacitor integrator with resistive attenuator is designed for the DC offset canceling (DCOC) loop. The instrumentation amplifier is implemented in a standard 0.18μm CMOS process. Simulation results show that the input referred noise is 1.28 μVrms ranging from 1Hz to 110Hz while consuming 192nW with a 1.2V supply.

关键词： Instruments Switches Electrocardiography Electronic mail Abstracts Attenuators Frequency locked loops

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Understanding of self-heating enhanced degradation in pLDMOSFETs by MR-DCIV method

Understanding of self-heating enhanced degradation in pLDMOS...

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International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P.R. China

Self-heating enhanced degradation in pLDMOSFETs was studied by non-destructive MR-DCIV method. Due to self-heating effect in pLDMOSFETs, several times larger MR-DCIV degradation per finger was observed for multi-finger devices with higher temperature rise and less channel edge heat dissipation. Our study has shown that self-heating induced degradation shared the similar trends and mechanism to NBTI.

关键词： Stress Degradation Fingers Logic gates Interface states Voltage measurement Temperature measurement

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A TDC based process variation sensor for both NMOS and PMOS variation monitoration

A TDC based process variation sensor for both NMOS and PMOS ...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Lei Ai Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing P. R. China

ISBN: (纸本)9781479923366

A TDC based process variation sensing circuit for monitoring the variation of both NMOS and PMOS is proposed. The digital outputs of this sensor can offer the circuit designer clear message that indicates the variation of both NMOS and PMOS. Based on the specific inverter chain design concept, this sensor demonstrated with better sensitivity. 10000 Monte Carlo Simulation based on 65nm bulk CMOS process technology is used to verify the feasibility of this sensor.

关键词： Logic gates MOS devices Monitoring

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Electron mobility model for tensile strained-Si(101)

Electron mobility model for tensile strained-Si(101)

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2014 International Conference on Energy Research and Power Engineering, ERPE 2014

作者： Wang, Jian An Nan, Meng Hu, Hui Yong Zhang, He Ming Sichuan Institute of Solid State Circuits CETC Chongqing 400060 China Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of Microelectronics Xidian University Xi'an 710071 China

ISBN: (纸本)9783038351603

Nowadays, the strained-Si technology has been used to maintain the momentum of semiconductor scaling due to its enhancement performance result from the higher mobility. In this paper, the influence of ionizing impurity scattering, acoustic phonon scattering and intervalley scattering to strained-Si(101) material is *** addition, a calculation of the electron mobility in Strained-Si(101) material is made using the average momentum relaxation time method described in Ref [1]. The results show that the electron mobility increases gradually for both [001] and [100] orientations while for [010] orientation increases rapidly with the increasing Ge fraction x.[1]. © (2014) Trans Tech Publications, Switzerland.

关键词： Electrons

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A Ring Oscillator based reliability structure for duty-cycle measurement under BTI stresses

A Ring Oscillator based reliability structure for duty-cycle...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Lei Ai Yandong He Fang Qiao Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing P. R. China

ISBN: (纸本)9781479932849

The static BTI stress (DC stress) have a significant influence on duty cycle of Ring Oscillators, low power SRAMs and dynamic register files because of its asymmetrical gradation. A ring oscillator based structure is proposed to measure the duty cycle of an inverter chain based ring oscillator. The proposed structure can measure the duty cycle shifts conveniently and accurately. Simulating results shows that benefiting from the continuous accumulation, the duty-cycle of the inverter chain can be measured accurately.

关键词： Integrated circuit reliability Temperature measurement Abstracts Reliability engineering Oscillators Degradation

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Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs

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Physica Status Solidi (C) Current Topics in Solid State Physics 2015年第3期12卷 292-298页

作者： Simoen, Eddy Cretu, Bogdan Fang, Wen Aoulaiche, Marc Routoure, Jean-Marc Carin, Regis dos Santos, Sara Luo, Jun Zhao, Chao Martino, Joao Antonio Claeys, Cor Imec Kapeldreef 75 Leuven3001 Belgium Department of Solid-State Sciences Ghent University Gent Belgium ENSICAEN and CNRS UMR 6072 GREYC Caen14050 France Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China E.E. Department KU Leuven Leuven Belgium Presently at Micron Technology Belgium Imec Campus Belgium University of Caen UMR 6072 GREYC Caen14050 France LSI/ PSI/USP University of São Paulo SP Brazil

An overview is given on the possibilities of using generation-recombination (GR) noise as a tool for defect spectroscopy in semiconductor materials and devices. The method is illustrated by n-channel MOSFETs fabricated on silicon-on-insulator (SOI) substrates with an ultra-thin buried oxide (UTBOX). As will be shown, the use of fully depleted (FD) UTBOX devices offers some unique opportunities and challenges. In the first instance, one can apply the standard GR noise spectroscopy in function of the temperature to derive the relevant deep-level parameters like the activation energy, the capture cross section and the concentration. In addition, some new type of spectroscopy can be applied to defects in the silicon film by exploiting the front- and/or back-gate bias dependence of the Lorentzian noise parameters. Finally, it is shown that for small geometry transistors the GR noise is generated by one or only a few centres. This becomes obvious in the time domain, where the channel current exhibits random telegraph signal (RTS) fluctuations. The up and down time constants and the relative RTS amplitude can be used to derive the GR centre parameters and, moreover, its spatial location, when combined with numerical device simulations. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

关键词： Activation energy

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A Simple circuit to investigate threshold voltage variation and its application in monitoring negative bias temperature instability degradation

A Simple circuit to investigate threshold voltage variation ...

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作者： Hong, Jie He, Yandong Zhang, Ganggang Zhang, Xing Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing 100871 China

This paper presents a test circuit which can be used to analyze the p-MOSFET threshold voltage (VT) shift and fluctuation. The proposed circuit includes two p-MOSFETs, series connection. Using the circuit, we can directly measure threshold voltage shift on the output side and gather fluctuation statistics of p-MOSFET devices. The principle and the sensitivity of this method are demonstrated, followed by simulation and experimental results. A predictive model of negative bias temperature instability (NBTI) is introduced to analyze the PMOS degradation under constant stress. The NBTI stress experimental results have shown that this circuit can monitor NBTI degradation accurately, and offer a significant improvement in efficiency over existing Id-Vg methods. © 2013 The Japan Society of Applied Physics.

关键词： Negative bias temperature instability

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A ring oscillator based reliability structure for NBTI & PBTI measurement

A ring oscillator based reliability structure for NBTI & PBT...

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2013 IEEE International Conference of Electron devices and Solid-State circuits, EDSSC 2013

作者： Wang, Xiqing Hong, Jie He, Yandong Zhang, Ganggang Han, Lin Zhang, Xing Institute of Microelectronics Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing 100871 China

ISBN: (纸本)9781467325233

A ring oscillator based structure in digital circuits is presented for measuring NBTI and PBTI effects. The proposed test structure enables simultaneous stress of all devices under tests in either NBTI or PBTI mode and measures frequency degradation or the threshold voltage shift. The threshold voltage shift due to NBTI or PBTI can be directly read out in the proposed circuit which has been designed in a 1.2V, 90nm technology. © 2013 IEEE.

关键词： Negative bias temperature instability

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