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2012 Asian Pacific Conference on Energy, Environment and Sustainable Development, APEESD 2012

作者： Jia, Shaoxia Zhao, Lingli Yang, Jinghua Zhang, Chen Wang, Shougou Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9783037855683

A novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist (PR). Argon (Ar) and oxygen (O2) were employed as the working gases under atmospheric pressure in ambient air. The PR stripping rate was measured as functions of time, input power, and the flow rates of the oxygen/argon. Optical Emission Spectroscopy (OES) was used to measure the optical emission spectra of the plasma to study the mechanism of PR stripping process. It is presumable that C-H bands were broken by high energy electron in the plasma and OH was generated in the process with the participation of O atom. Optical Microscope, Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used to measure the surface of the silicon substrate after the stripping. It is proved that this kind of novel device could strip the AZ9912 PR effectively as high as 850nm/min, without residues and ion bombardment damage on the wafer substrate. © (2013) Trans Tech Publications, Switzerland.

关键词： Oxygen

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A 6.25-Gbps 4-tap low-power decision feedback equalizer in 0.13µm CMOS technology

A 6.25-Gbps 4-tap low-power decision feedback equalizer in 0...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Xuelin Zhang Yuan Wang Jian Cao Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781467325240

A half-rate 4-tap decision feedback equalizer (DFE) is implemented in 0.13μm CMOS technology for low-power I/O links. Modified current-mode logic (CML) latches with PMOS loads are used in the new proposed DFE to achieve better power and area efficiency. The proposed DFE consumes only 1.914mW from a 1.2V supply when equalizing 6.25Gb/s data passing through a simulated low-pass channel with 18 dB of loss at 3.125 GHz, which is 39.5% lower than the traditional design with resistor loaded CML latches.

关键词： Latches Decision feedback equalizers CMOS integrated circuits CMOS technology Solids

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Design and verification of a novel multi-RC-triggered power clamp circuit for on-chip ESD protection

Design and verification of a novel multi-RC-triggered power ...

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Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD)

作者： Guangyi Lu Yuan Wang Jian Cao Qi Liu Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing China

A novel multi-RC-triggered power clamp circuit is proposed in this paper. Effective capacitances of capacitors are multiplied by current mirrors and a modified asymmetric phase inverter is employed in the proposed circuit. Simulation and test results verify that the proposed circuit maintains enhanced ESD protection robustness with reduced chip-area.

关键词： Electrostatic discharges Clamps Inverters Mirrors Transistors Logic gates Layout

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A 4.9–6.9 GHz LC VCO with low-phase-noise

A 4.9–6.9 GHz LC VCO with low-phase-noise

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IEEE Conference on Electron devices and Solid-State circuits

作者： Shanliang Gan Yuan Wang Jian Cao Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781467325240

A wide-tuning-range and low-phase-noise LC voltage controlled oscillator (VCO) is presented in this paper. With the variable current source and source damping resistor, the proposed VCO exhibits a phase noise of -115dBc/Hz at 1MHz offset from 6 GHz carrier, and a power dissipation of 1.4mW. In addition, its tuning range is from 4.9 to 6.9 GHz with the MIM capacitor bank and differentially controlled varactors. The capacitor bank is used for wide tuning range and the differentially controlled varactors are useful for suppressing power supply noise.

关键词： Voltage-controlled oscillators Wireless communication Tuning CMOS integrated circuits

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A Test Structure and Spectroscopic Method for Monitoring Interface Traps

A Test Structure and Spectroscopic Method for Monitoring Int...

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IEEE International Reliability Physics Symposium

作者： Chao Wei Yandong He Gang Du Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University

ISBN: (纸本)9781479901128

A new test structure and spectroscopic characterization method for monitoring interface traps in MOSFETs is proposed, which can be used to directly evaluate the interface traps on both n- and p-type Si/SiO_2 interfaces through one-time direct current IV measurement. Based on the structure design and testing setup, a two-peak spectrum can be obtained. The properties of interface traps on both n- and p-type Si/SiO_2 interfaces can be distinguished by the peak height and position. Some effects on the spectroscopic method by the test structure design parameters have been studied systematically. Its application in reliability research was demonstrated.

关键词： Test structure DCIV Interface traps

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Multi-Region DCIV Spectroscopy and Impacts on the Design of STI-based LDMOSFETs

Multi-Region DCIV Spectroscopy and Impacts on the Design of ...

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IEEE International Reliability Physics Symposium

作者： Yandong He Ganggang Zhang Lin Han Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University

ISBN: (纸本)9781479901128

A probing technique, multi-region DCIV spectroscopy, has been investigated systematically. This non-destructive method demonstrated the attractive capability on profiling the interface states overall in STI-based LDMOSFETs. The sensitivity on the interface state generation at channel and accumulation region was superior to the conventional Id-Vg method. Based on the device characterization and stress tests, the dependence of spectroscopic features on channel, accumulation and poly overlap length was investigated and verified. The optimum device design to suppress device degradation was proposed.

关键词： Multi-region DCIV spectroscopy STI-based LDMOSFET Reliability

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Low Power EEPROM Designed for Sensor Interface Circuit

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电子学报(英文版) 2012年第4期21卷 642-644页

作者： MENG Xiangyun YANG Sen CHEN Zhongjian LU Wengao ZHANG Yacong HUANG Jingqing LI Haojiong SU Weiguo LI Song Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing 100871 China

EEPROM is an important part for interface circuit of sensor. It saves the calibration data and parameter setting data by non-volatile storage. A new low-power Erasable and electrically programmable read only memory (EEPROM) circuit for sensor interface circuit is introduced in this paper. The data stored in EEPROM can be reloaded automatically by the power-on-reset technique when the power is on. The module consumes power only during power-on-reset and data changing by status optimization and low-power design. This EEPROM circuit has been used in a MEMS accelerometer readout circuit verified by 0.35μm CMOS EEPROM process. The results are satisfying in that the module can write and store 25bit data and automatically reloads data within 0.1μs after power-on and then turns to low power mode.

关键词： EEPROM 接口电路设计低功耗设计传感器非易失性存储可编程只读存储器上电复位低功耗模式 Accelerometer, Erasable and electically programmable read only memory （EEPROM）, Low power, Readout circuit.

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Improvement of breakdown characteristics of an A1GaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

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Chinese Physics B 2012年第12期21卷 531-537页

作者：孔欣魏珂刘果果刘新宇 Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this study, the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor （HEMT） with a U-type gate foot. The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle, which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics. At the same time, only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device. U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system, without introducing any extra process steps. The simulation results are confirmed by experimental measurements. These features indicate that U-gate A1GaN/GaN HEMTs might be promising candidates for use in millimeter-wave power applications.

关键词： AlGaN/GaN HEMT breakdown characteristics millimeter-wave U-type gate foot

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Gate-Recessed AlGaN/GaN MOSHEMTs with the Maximum Oscillation Frequency Exceeding 120 GHz on Sapphire Substrates

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Chinese Physics Letters 2012年第7期29卷 280-283页

作者： KONG Xin WEI Ke LIU Guo-Guo LIU Xin-Yu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing 100029

Gate-recessed AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) on sapphire substrates are *** devices with a gate length of 160nm and a gate periphery of 2 × 75μmexhibit two orders of magnitude reduction in gate leakage current and enhanced off-state breakdown characteristics,compared with conventional ***,the extrinsic transconductance of an MOSHEMT is 237.2mS/mm,only 7% lower than that of Schottky-gate *** extrinsic current gain cutoff frequency fT of 65 GHz and a maximum oscillation frequency fmax of 123 GHz are deduced from rf small signal *** high fmax demonstrates that gate-recessed MOSHEMTs are of great potential in millimeter wave frequencies.

关键词： AlGaN/GaN MOSHEMT millimeter

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Heavy-ion-induced permanent damage in ultra-deep submicron fully depleted SOI devices

Heavy-ion-induced permanent damage in ultra-deep submicron f...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012

作者： Tan, Fei An, Xia Huang, Liangxi Zhang, Xing Ru, Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9781467324724

In this paper, heavy-ion-induced permanent damage in fully depleted silicon-on-insulator (FD SOI) devices are investigated. After exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented, which is due to the microdose effect in the oxide layer and the displacement damage in silicon film. Besides, the measured results also exhibit strong device geometry dependence. The electrical properties degradation such as the off-state leakage current and the on-state current become more serious with the gate length or gate width decreasing, which indicates that the heavy-ion-induced damage in ultra-deep submicron FD SOI devices can not be ignored and should be paid more attention for radiation hardened applications. © 2012 IEEE.

关键词： Heavy ions

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