检索结果-内蒙古大学图书馆

IEEE International Conference on Plasma Science (ICOPS)

作者： Yuanwei Wu Shaoxia Jia Lingli Zhao Shouguo Wang Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Summary form only given. A novel radio frequency (rf) dielectric barrier glow discharge plasma (DBGD) was utilized to evaluate the AZ9912 photoresist (PR) stripping effect. Argon (Ar) and oxygen (O2) were employed as working gases and ignited under atmospheric pressure. The discharge power efficiency was calculated based on the Lissajous plot and could reach to 80%. Compared to rf atmospheric glow discharges generated with bare electrodes, the DBGD remains stable and uniform over a larger current. Time dependant dielectric breakdown (TDDB) testing was conducted to evaluate the reliability of gate oxide on MOS capacitors. The surface of the etched PR was characterized using optical microscope and atomic force microscope (AFM). The results showed that there were no visible residues and plasma-induced ion bombardment damage left on the surface. Optical Emission Spectroscopy (OES) was also used to study the working species during the stripping process and the results showed that the possible useful active species belong to the atomic O and OH radical.

关键词： Atom optics Glow discharges Resists Dielectrics Plasmas microelectronics Radio frequency

来源：评论

学校读者我要写书评

暂无评论

A Design of Readout Circuit for 384×288 Uncooled Microbolometer Infrared Focal Plane Array

A Design of Readout Circuit for 384×288 Uncooled Microbolom...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： San-Lin Liu Ya-Cong Zhang Xiang-Yun Meng Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A readout integrated circuit（ROIC）for uncooled infrared focal plane array（IRFPA）is presented in this *** ROIC is designed for a 384×288 detector array made of amorphous silicon microbolometers with a pixel-pitch of 35μm.A capacitive trans-impedance amplifier（CTIA）is used in each column to integrate the pixel *** design is tuned on a detailed theoretical analysis of the sensor signal and noise *** chip has been fabricated using a 0.35μm 2P4M CMOS process under 5V supply *** ROIC can operate at a data rate of 7MHz,achieving a frame rate of 60Hz and the total power dissipation is less than 108mW.A 32×32 experimental chip has been tested.

关键词： process dissipation experimental

来源：评论

学校读者我要写书评

暂无评论

Radiation Detector Readout Circuit with Two-stage Charge Sensitive Amplifier

Radiation Detector Readout Circuit with Two-stage Charge Sen...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Ya-Cong Zhang Xiao-Lu Chen Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

A two-stage charge sensitive amplifier structure suitable for silicon radiation detector with large capacitance is *** has the advantage that the integration capacitor can be large to reduce the gain sensibility to detector capacitance variation without any stability *** feasibility of the proposed circuit is verified by comparing the simulation results with the conventional one-stage charge sensitive amplifier.A prototype of 16-channel readout circuit for electron collection has been taped out in a 0.35μm CMOS technology with a power supply of *** area is 2.5×1.54mm 2 with 42 pads and the power dissipation is 60mW.

关键词： CSA Radiation Detector Readout Circuit with Two-stage Charge Sensitive Amplifier

来源：评论

学校读者我要写书评

暂无评论

Heavy-Ion-Induced Permanent Damage in Ultra-deep Submicron Fully Depleted SOI devices

Heavy-Ion-Induced Permanent Damage in Ultra-deep Submicron F...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Fei Tan Xia An Liangxi Huang Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

In this paper,heavy-ion-induced permanent damage in fully depleted silicon-on-insulator（FD SOI） devices are *** exposure to heavy ions, the characteristics degradation of FD SOI nMOSFET are presented,which is due to the microdose effect in the oxide layer and the displacement damage in silicon ***,the measured results also exhibit strong device geometry *** electrical properties degradation such as the off-state leakage current and the on-state current become more serious with the gate length or gate width decreasing,which indicates that the heavy-ion-induced damage in ultra-deep submicron FD SOI devices can not be ignored and should be paid more attention for radiation hardened applications.

关键词： applications should serious

来源：评论

学校读者我要写书评

暂无评论

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Three-dimensional modeling of AlGaN/GaN HEMT including elect...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Jianhui Wang Xinhua Wang Lei Pang Xiaojuan Chen Xin Kong Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

关键词： Gallium nitride Solid modeling Aluminum gallium nitride HEMTs Temperature measurement Logic gates Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

Dislocation induced nonuniform surface morphology of Ti/Al/N...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Xin Kong Ke Wei Guoguo Liu Jianhui Wang Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this study, Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors was fabricated and demonstrated distribution of bright and dark areas on the surface. Surface element analyses show that it is of great difference in the Ni and Au content between these two kinds of regions. According to transmission electron microscopy and corresponding Electron dispersive x-ray spectroscopy analyses, plenty of Ni was detected in dislocation rich regions while rare Ni was left in dislocation free regions so that Au tended to accumulate in the form of AlAu x binary alloy. The surface nonuniformity presented on the surface should be attributed to the nonuniform interfacial reactions resulted from the dislocations.

关键词： Aluminum gallium nitride Gallium nitride Surface morphology Nickel Gold Ohmic contacts

来源：评论

学校读者我要写书评

暂无评论

A wide dynamic range transimpedance amplifier with high gain-bandwidth product for 10 Gb/s optical links

A wide dynamic range transimpedance amplifier with high gain...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Fan Jiang Jianwu Chen Danyu Wu Jin Wu Zhi Jin Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

This paper presents the design method and implementation of a wide dynamic range transimpedance amplifier (TIA) with high gain-bandwidth product (GBW) based on 1μm GaAs process of WIN company. The wide dynamic range results from the utilization of a parallel feedback structure that divides the input current when it is large. And the high GBW owes to the limiting amplifier (LA) which functions as a gain stage based on a modified Cherry-Hopper amplifier. The proposed TIA achieves a maximum input current of 3.5 mA and a transimpedance of 68.6 dBΩ and a bandwidth of 10.9 GHz.

关键词： Bandwidth Resistors Dynamic range Noise Limiting Gain Optical receivers

来源：评论

学校读者我要写书评

暂无评论

An Innovative Sensing Architecture for Multilevel Flash Memory

An Innovative Sensing Architecture for Multilevel Flash Memo...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiao-Min Gao Yuan Wang Yan-Dong He Gang-Gang Zhang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits(MoE) Institute of Microelectronics Peking University Beijing

ISBN: (纸本)9781467324748

Multilevel cell storage allows two or more bits to be stored in one cell,thus reducing almost 50% of Flash memory's area without technology shrinkage. Basic concepts like sensing schemes in multilevel Flash memory are fundamental and need further *** this paper,an innovative sensing architecture is presented,with the name of serial-parallel sensing scheme,which provides fast read speed and a medium area cost and power consumption,compared with conventional parallel and serial sensing *** 65nm technology,the new architecture performs well, almost five times as fast as serial sensing and has advantage over parallel sensing in both area and power consumption cost.

关键词： Multilevel storage,serial-parallel sensing architecture,sensing amplifier

来源：评论

学校读者我要写书评

暂无评论

Antireflection properties and solar cell application of silicon nanoscructures

引用

Journal of Semiconductors 2011年第8期32卷 55-60页

作者：岳会会贾锐陈晨丁武昌武德起刘新宇 Key Laboratory of Microwave Devices and Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences

Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching *** silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52%and less than 8%are achieved,respectively.A 12.45%SiNWAs-textured solar cell（SC） with a short circuit current of 34.82 mA/cm^2 and open circuit voltage（K_（oc）） of 594 mV was fabricated on 125×125 mm^2 Si using a conventional process including metal grid *** is revealed that passivation is essential for hybrid structure textured SCs,and K_（oc） can be enlarged by 28.6%from 420 V to 560 mV after the passivation layer is *** loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency（EQE） of samples with different fabrication *** is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.

关键词： antireflection properties silicon nanowires solar cells passivation

来源：评论

学校读者我要写书评

暂无评论

Binary Tree Structure Random Dynamic Element Matching Technique in Current-Steering DACs

Binary Tree Structure Random Dynamic Element Matching Techni...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Guangliang Guo Yuan Wang Wei Su Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronics Devices and Circuits（MoB）Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A novel Dynamic Element Matching（DEM）method is presented to improve the static and dynamic performance of Nyquist-rate current-steering digital to analog converter（DAC）.Compared to conventional DEM methods,this approach only increases or decreases the number of selected unit current sources randomly when the input code ***,signal dependent distortions can be eliminated efficiently at high sampling frequencies.A 6-bit current-steering DAC model adopting the proposed DEM coding method was built up to verify the performance in *** could reach a better SFDR（56dB）value and a better DNL（0.26LSB） and INL（0.45LSB）value compared with traditional DEM methods.

关键词： traditional method compared

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：