检索结果-内蒙古大学图书馆

您好，读者！请登录

内蒙古大学图书馆

首页
概况
党建
资源
服务
科研支持
- 论文收录引用证明
- 科技查新
知识产权
档案馆
帮助

咨询与建议

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

您的常用邮箱：*

您的手机号码：*

问题描述：

当前已输入0个字，您还可以输入200个字

全部搜索
期刊论文
图书
学位论文
标准
纸本馆藏
外文资源发现
数据库导航
超星发现

高级检索

时间限定

出版年份：

文献类型

图书期刊文献学位论文多媒体

馆藏选择

电子馆藏纸本馆藏

核心期刊

全部期刊 SCI 收录期刊 SSCI 收录期刊 EI 收录期刊 CSCD 收录期刊 CSSCI 收录期刊

语言

中文英文

文献类型

期刊文献图书学位论文标准纸本馆藏

帮助

文字说明：

T=题名（书名、题名），A=作者（责任者），K=主题词，P=出版物名称，PU=出版社名称，O=机构（作者单位、学位授予单位、专利申请人），L=中图分类号，C=学科分类号，U=全部字段，Y=年（出版发行年、学位年度、标准发布年）

检索规则说明：

AND代表“并且”；OR代表“或者”；NOT代表“不包含”；(注意必须大写,运算符两边需空一格)

检索范例：

范例一：(K=图书馆学 OR K=情报学) AND A=范并思 AND Y=1982-2016
范例二：P=计算机应用与软件 AND (U=C++ OR U=Basic) NOT K=Visual AND Y=2011-2016

分类表

所选分类

>> <<

限定检索结果

文献类型

398 篇 会议
212 篇 期刊文献

馆藏范围

610 篇 电子文献
0 种 纸本馆藏

日期分布

学科分类号

421 篇 工学
- 267 篇 电子科学与技术（可...
- 140 篇 材料科学与工程（可...
- 81 篇 电气工程
- 71 篇 计算机科学与技术...
- 56 篇 化学工程与技术
- 27 篇 信息与通信工程
- 25 篇 光学工程
- 25 篇 仪器科学与技术
- 19 篇 冶金工程
- 19 篇 动力工程及工程热...
- 19 篇 控制科学与工程
- 18 篇 软件工程
- 15 篇 机械工程
- 8 篇 生物工程
- 7 篇 力学（可授工学、理...
- 7 篇 生物医学工程（可授...
- 5 篇 纺织科学与工程
- 4 篇 核科学与技术
- 4 篇 环境科学与工程（可...
- 4 篇 安全科学与工程
154 篇 理学
- 115 篇 物理学
- 54 篇 化学
- 24 篇 数学
- 9 篇 生物学
- 7 篇 统计学（可授理学、...
- 5 篇 系统科学
- 4 篇 大气科学
32 篇 管理学
- 26 篇 管理科学与工程(可...
- 5 篇 图书情报与档案管...
3 篇 医学
2 篇 经济学
2 篇 法学
2 篇 军事学
1 篇 艺术学

主题

34 篇 logic gates
28 篇 microelectronics
25 篇 switches
20 篇 silicon
18 篇 clocks
17 篇 degradation
17 篇 cmos technology
16 篇 capacitors
15 篇 simulation
15 篇 transistors
15 篇 performance eval...
12 篇 threshold voltag...
12 篇 temperature meas...
12 篇 graphene
12 篇 electrodes
12 篇 mosfets
11 篇 power demand
11 篇 voltage measurem...
10 篇 voltage
10 篇 stress

机构

230 篇 key laboratory o...
55 篇 university of ch...
38 篇 key laboratory o...
23 篇 key laboratory o...
22 篇 key laboratory o...
16 篇 key laboratory o...
13 篇 key laboratory o...
12 篇 department of el...
12 篇 institute of mic...
11 篇 key laboratory o...
11 篇 peking universit...
11 篇 school of inform...
10 篇 school of softwa...
9 篇 department of el...
9 篇 high-frequency h...
9 篇 laboratory of mi...
8 篇 peking universit...
8 篇 frontier institu...
8 篇 key laboratory o...
8 篇 key laboratory o...

作者

86 篇 ru huang
68 篇 yuan wang
67 篇 xing zhang
43 篇 song jia
27 篇 ming li
27 篇 wengao lu
26 篇 zhongjian chen
25 篇 ming liu
23 篇 yacong zhang
23 篇 wang yuan
22 篇 qi liu
21 篇 ganggang zhang
21 篇 jia song
20 篇 liu ming
19 篇 huailin liao
18 篇 qianqian huang
18 篇 runsheng wang
18 篇 zhang xing
17 篇 xia an
16 篇 xiaoyan liu

语言

571 篇 英文
21 篇 中文
16 篇 其他
2 篇 法文

检索条件"机构=Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits"

共 610 条记录，以下是451-460 订阅

全选清除本页清除全部题录导出标记到"检索档案"

详细简洁

排序：

A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator for RapidIO application

A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator f...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Hailing Yang Yuan Wang Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronics Devices and Circuits（MoE） Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

A phase interpolator（PI）-based clock data recovery（CDR）circuit for RapidIO application is presented,which avoids the coupled interference of *** the integration of a digital control cell,the complex and area consumption has been reduced *** adaptive bandwidth PLL structure is adopted so that it can provide clocks of three frequencies while maintain a good jitter *** a 0.13um CMOS process,the circuit has a jitter of 11.2ps@3.125Gbps with a power consumption of 21.7mW under 1.2V,and the core circuit area is 0.16mm2.

关键词： clock and data recovery phase interpolator current mode logic adaptive bandwidth PLL

来源：评论

学校读者我要写书评

暂无评论

Stripping Photo-Resist with RF Dielectric Barrier Atmospheric Pressure Plasma

Stripping Photo-Resist with RF Dielectric Barrier Atmospheri...

引用

2012 Asian Pacific Conference on Energy,Environment and Sustainable Development(APEESD 2012)

作者： Shaoxia Jia Lingli Zhao Jinghua Yang Chen Zhang Shougou Wang Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences

A novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist（PR）. Argon（Ar） and oxygen（O） were employed as the working gases under atmospheric pressure in ambient air. The PR stripping rate was measured as functions of time, input power, and the flow rates of the oxygen/argon. Optical Emission Spectroscopy（OES） was used to measure the optical emission spectra of the plasma to study the mechanism of PR stripping process. It is presumable that C-H bands were broken by high energy electron in the plasma and OH was generated in the process with the participation of O atom. Optical Microscope, Atomic Force Microscope（AFM） and Scanning Electron Microscope（SEM） were used to measure the surface of the silicon substrate after the stripping. It is proved that this kind of novel device could strip the AZ9912 PR effectively as high as 850nm/min, without residues and ion bombardment damage on the wafer substrate.

关键词： Photo-resist stripping Atmospheric pressure plasma OH radical Emission spectra

来源：评论

学校读者我要写书评

暂无评论

Analysis of the influence of contact position to the ESD protection ability in Ggnmos device

Analysis of the influence of contact position to the ESD pro...

引用

2nd International Conference of Electrical and Electronics Engineering, ICEEE 2011

作者： Zhang, Peng Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 100871 Beijing China

ISBN: (纸本)9783642259043

For the silicided GGnMOS as ESD protection device, the current localization in the n+ diffusion duo to the short contact spacing often degrades the ESD performance of the device. By enlarging the contact spacing, ballasting resistance is introduced to allow a more uniform current distribution. How the drain contact to gate spacing and contact to contact spacing influencing the ESD performance of the GGnMOS is investigated. We find that lengthening the contact to contact spacing can significantly improve the ESD performance of silicided GGnMOS. © 2011 Springer-Verlag.

关键词： Electrostatic devices

来源：评论

学校读者我要写书评

暂无评论

A novel multi-finger layout strategy for GGnMOS ESD protection device

A novel multi-finger layout strategy for GGnMOS ESD protecti...

引用

2011 IEEE 9th International Conference on ASIC, ASICON 2011

作者： Zhang, Peng Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781612841908

A novel layout strategy for on-chip ESD protection application is presented to solve the non-uniformity turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The multi-finger gates as well as drains and sources are connected in serrate type. The whole multi-finger device acts as singer finger with large gate width. After realized in 0.13μm craft and tested under TLP method, the It2 per unit channel width of the novel GGnMOSs are much higher than those of the traditional GGnMOSs by this simply approach. © 2011 IEEE.

关键词： Integrated circuits

来源：评论

学校读者我要写书评

暂无评论

Effective design for crff sigma-delta modulators using inverters based on 0.13μm CMOS

Effective design for crff sigma-delta modulators using inver...

引用

作者： Li, Hongyi Wang, Yuan Jia, Song Zhang, Xing Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9783642197116

In this paper, an efficient method to relax timing requirements of CRFF sigma-delta modulators has been proposed. A system optimization to circuit level design was finished. Class-C inverter was used to realize half delay integrators of the proposed structure. A 4th-order 1-bit CRFF topology was implemented in smic 0.13μm CMOS technology. With 31.25MHz sampling frequency and 64x oversampling ratio, 13.2-bit resolution has been reached. The whole circuit consumes 472.63-μW power from a single 0.6V supply voltage. Thus, a low-voltage low-power medium-bandwidth high-accuracy sigma-delta modulator has been obtained. © 2011 Springer-Verlag Berlin Heidelberg.

关键词： Topology

来源：评论

学校读者我要写书评

暂无评论

Analysis of the Influence of Contact Position to the ESD Protection Ability in Ggnmos Device

Analysis of the Influence of Contact Position to the ESD Pro...

引用

The second International Conference of Electrical and Electronics Engineering(ICEEE 2011)

作者： Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

For the silicided GGn MOS as ESD protection device, the current localization in the n+ diffusion duo to the short contact spacing often degrades the ESD performance of the device. By enlarging the contact spacing, ballasting resistance is introduced to allow a more uniform current distribution. How the drain contact to gate spacing and contact to contact spacing influencing the ESD performance of the GGn MOS is investigated. We find that lengthening the contact to contact spacing can significantly improve the ESD performance of silicided GGn MOS.

关键词： Contact Spacing,Current Localization,Ballasting Resistance,Second Breakdown Current,ESD,Multi-finger GGn MOS

来源：评论

学校读者我要写书评

暂无评论

A novel on-chip CMOS current sensor implemented by switched capacitors for a current-mode control DC-DC buck converter

A novel on-chip CMOS current sensor implemented by switched ...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Yong Zhang Wengao Lu Juan Guo Yajing Zhang Zhongjian Chen Yacong Zhang Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China

A novel on-chip CMOS current sensor implemented by switched capacitors for a current - mode buck converter is presented in this paper. This proposed current sensing circuit does not need another sense MOSFET and a voltage-to-current and current-to-voltage transform circuit. We use the 0.35um DPTM CMOS process to design and simulate this circuit. Test result shows that the accuracy and the speed of the proposed current sensing circuit are high.

关键词： Sensors Capacitors Power MOSFET Accuracy CMOS integrated circuits Resistors

来源：评论

学校读者我要写书评

暂无评论

A low power high speed readout circuit for 320×320 IRFPA

A low power high speed readout circuit for 320×320 IRFPA

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Guannan Wang Wengao Lu Ran Fang Li You Yacong Zhang Zhongjian Chen Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China

A low power high speed Readout Integrated Circuit(ROIC) design for 320 × 320 IRFPA is proposed in this paper. The ROIC operates as follows: after integration phase, voltages on column bus of odd rows and even rows are read out alternately. And the results are sampled and stored alternately on two sample capacitors added at the output point of column CSA. When sample capacitor for odd row samples and holds data, sample capacitor for even row works as feedback capacitor of output buffer so that voltage stored on sample capacitor can be read out directly. In this design, each column has one low power charge amplifier, and output buffer's power is optimized. Besides, capacitance of sample capacitor is much larger than that of CSA's feedback capacitor, so the KTC noise is lower and the charge injection is suppressed while the output range is not impaired. This design is also applicable to window readout. The readout speed can reach 8MHz with power consumption lower than 50mW. A 320 × 320 ROIC with pixel size of 30 × 30 μm 2 has been designed and fabricated with a 0.35 μm DPTM CMOS process under 5v supply voltage.

关键词： Capacitors Capacitance Power dissipation Arrays MOSFETs Buffer storage Noise

来源：评论

学校读者我要写书评

暂无评论

SCR device with high holding current for on-chip ESD protection

SCR device with high holding current for on-chip ESD protect...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

A silicon-controlled rectifier (SCR) device for on-chip ESD protection is proposed. The Anode pad of the device is directly connected to die drain of the embedded nMOS crossing the N-well P-substrate junction of the nMOS to achieve a high holding current. Thus, latch-up immune current of SCR type ESD protection device is achieved by this method.

关键词： Thyristors Electrostatic discharges MOS devices CMOS integrated circuits Current density Stress System-on-a-chip

来源：评论

学校读者我要写书评

暂无评论

Novel single-loop sigma-delta modulator with extended dynamic range

Novel single-loop sigma-delta modulator with extended dynami...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

Using an auxiliary quantizer before unity-STF SDM, a novel 3 rd -order dual-quantizer SDM with extended dynamic range is presented. With hybrid distributed feedback & feedforward paths and an internal feedforward path, a novel low-distortion 3 rd -order SDM with simple adder before quantizer is proposed as the unity-STF SDM. Simulations show their perfect immunity to non-idealities.

关键词： Multi-stage noise shaping Dynamic range Capacitors Modulation Noise Bandwidth Feedforward neural networks

来源：评论

学校读者我要写书评

暂无评论

没有更多数据了...

全选清除本页清除全部题录导出标记到“检索档案”

共61页 << < 42 43 44 45 46 47 48 49 50 51 > >>

检索报告对象比较合并检索0

隐藏清空

合并搜索

回到顶部

执行限定条件

内容：

评分：

请选择保存的检索档案：

请选择收藏分类：

订阅名称：

通借通还

温馨提示：

图书名称：

借书校区：

取书校区：

手机号码：

邮箱地址：

一卡通帐号：

电话和邮箱必须正确填写，我们会与您联系确认。

联系人：

所在院系：

联系邮箱：

联系电话：

内蒙古自治区呼和浩特市赛罕区大学西街235号邮编: 010021

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：