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A novel multi-finger layout strategy for GGnMOS ESD protection device

A novel multi-finger layout strategy for GGnMOS ESD protecti...

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International Conference on ASIC

作者： Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

A novel layout strategy for on-chip ESD protection application is presented to solve the non-uniformity turn-on phenomenon of multi-finger gate-grounded nMOS (GGnMOS). The multi-finger gates as well as drains and sources are connected in serrate type. The whole multi-finger device acts as singer finger with large gate width. After realized in 0.13μm craft and tested under TLP method, the It2 per unit channel width of the novel GGnMOSs are much higher than those of the traditional GGnMOSs by this simply approach.

关键词： Fingers Nonhomogeneous media Integrated circuits MOSFET circuits Robustness

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Novel single-loop sigma-delta modulator with extended dynamic range

Novel single-loop sigma-delta modulator with extended dynami...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

Using an auxiliary quantizer before unity-STF SDM, a novel 3 rd -order dual-quantizer SDM with extended dynamic range is presented. With hybrid distributed feedback & feedforward paths and an internal feedforward path, a novel low-distortion 3 rd -order SDM with simple adder before quantizer is proposed as the unity-STF SDM. Simulations show their perfect immunity to non-idealities.

关键词： Multi-stage noise shaping Dynamic range Capacitors Modulation Noise Bandwidth Feedforward neural networks

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New understanding of the statistics of random telegraph noise in Si nanowire transistors - the role of quantum confinement and non-stationary effects

New understanding of the statistics of random telegraph nois...

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International Electron devices Meeting (IEDM)

作者： Changze Liu Runsheng Wang Jibin Zou Ru Huang Chunhui Fan Lijie Zhang Jiewen Fan Yujie Ai Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, the random telegraph noise (RTN) statistics in silicon nanowire transistors (SNWTs) are comprehensively studied. The capture/emission time constants and probabilities are found to be strongly impacted by the quantum confinement in SNWTs, which cannot be fully explained by classical RTN theory. A full quantum RTN model for SNWTs is proposed for fundamental understanding of the experiments. The characteristics of non-stationary RTN in SNWTs under high-field biases are studied for the first time, based on the developed statistical trap-response (STR) characterization method. The trap capture probability is found to be much different from that of the quasi-stationary RTN, leading to large errors in circuit aging prediction if using traditional RTN distributions. These new understandings are critical for robust SNWT circuit design against RTN.

关键词： Temperature measurement Potential well Stress Logic gates Weibull distribution Time measurement

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Self-depleted T-gate Schottky barrier tunneling FET with low average subthreshold slope and high ION/IOFF by gate configuration and barrier modulation

Self-depleted T-gate Schottky barrier tunneling FET with low...

引用

International Electron devices Meeting (IEDM)

作者： Qianqian Huang Zhan Zhan Ru Huang Xiang Mao Lijie Zhang Yingxin Qiu Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781457705069

In this paper, a novel silicon-based T-gate Schottky barrier tunneling FET (TSB-TFET) is proposed and experimentally demonstrated. With enhanced electric field at source side through gate configuration for steeper subthreshold slope (SS), the device with self-depleted structure can effectively suppress the leakage current and simultaneously achieve the dominant Schottky barrier tunneling current for high ON-current without area penalty, which can alleviate the problems in silicon TFET. In addition, the proposed TSB-TFET can have comparable DIBL effect and reduced gate-to-drain capacitance compared with traditional TFET. Further device optimization is experimentally achieved by extended multi-finger gate configuration of the same footprint and barrier modulation by dopant segregation Schottky technology. With compatible bulk CMOS technology, the fabricated device can achieve steep SS over almost 5 decades of current, as well as high I ON /I OFF ratio (~10 7 ). The proposed device with high compatibility is very promising for future low power system applications.

关键词： Logic gates Schottky barriers Voltage measurement Tunneling Junctions Electric fields Temperature measurement

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A novel dynamic element matching technique in current-steering DAC

A novel dynamic element matching technique in current-steeri...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Wei Su Yuan Wang Junlei Zhao Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits (MOB) Institute of Microelectronics Peking University Beijing China

This paper presents a novel dynamic element matching (DEM) method called Thermo Data Weighted Average (TDWA) for Nyquist-rate current - steering digital to analog converter (DAC). When the input code changes, it only increase or decrease the number of unit current source which is be chosen. This approach can reach a better static performance than full random DEM technique but also eliminate signal dependent distortions to achieve good linearity at high sampling frequencies as other DEM implementations.

关键词： Encoding Switches Simulation Digital-analog conversion microelectronics Linearity Distortion

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An extensible drive system for AM-OLED panel

An extensible drive system for AM-OLED panel

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IEEE Conference on Electron devices and Solid-State circuits

作者： Lilan Yu Wengao Lu Guannan Wang Yacong Zhang Ze Huang Zhongjian Chen Lijiu Ji Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

A drive system for active-matrix OLED panel is presented. The developed system comprises a digital interface which can receive DVI or MCU signals directly, a digital control part, a SRAM for storing display information, common drivers, and the 64-step gray scale segment drivers. Both common driver and segment driver is capable to be cascaded, so it can drive panels in different resolutions by using multiple chips. The drivers are using 0.35 um CMOS technology with 15V high voltage devices.

关键词： Organic light emitting diodes Vehicles Layout Random access memory Simulation Active matrix technology microelectronics

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A small-area low-mismatch multi-channel constant current LED driver

A small-area low-mismatch multi-channel constant current LED...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Ze Huang Wengao Lu Lilan Yu Guannan Wang Xiangyun Meng Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

This paper proposes a new structure of LED(Light-emitting diode) driver for obtaining a low mismatch output current between different channels and even reduces the chip area. It's fabricated with TSMC 0.35 μm DDD process. The chip contains 16 channels and the maximum/minimum output current is 3mA/45mA, respectively. The value of each channel's output current is the same and controlled by a programmable 6-bits digital input signals. The circuit uses constant gate voltage of the power MOS working in the linear region whose (V GS - V TH ) is 10 to 50 times of V DS . The advantage is no DAC(Digital-to-Analog Converter) and no complex gate voltage generating circuit. Simple gate voltage generating circuit can also adapt to a wide range of external resistance changes. Because of the lower mismatch caused by threshold voltage mismatch, it can achieve a highly matched output current. The chip has only ±1.1% mismatch between different channels. The area of each channel's power MOS is only 200 μm × 100 μm. The area of analog part including current bias, bandgap reference, current mirror, and other control circuits is only 400 μm × 200 μm.

关键词： Light emitting diodes Logic gates Generators Mirrors Threshold voltage Resistors Driver circuits

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Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Experimental insights on the degradation and recovery of pMO...

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International Symposium on Physical & Failure Analysis of Integrated circuits

作者： Yandong He Ganggang Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China

A detail experimental study on the reliability degradation of pMOSFET under non-uniform NBTI stress was conducted. The relationship of drain bias under non-uniform NBTI stress was obtained and a turning curve was found. The non-uniform stress induced degradation can be separated into two different region based on the drain bias dependency, and the model for each region was developed and evaluated under various voltage and temperature. In addition, the conventional and enhanced NBTI stress demonstrated reverse temperature dependency. The non-uniform NBTI stress exhibited much lower recovery level, and its acceleration factor was similar to pure NBTI stress. From the temperature and voltage acceleration point of view, our results show that the non-uniform NBTI stress becomes the worst reliability corner for pMOSFETs with ultra thin gate oxynitride. The NBTI degradation with nominal drain bias was proposed to become as a device lifetime monitor for pMOSFETs.

关键词： Stress Degradation Logic gates MOSFET circuits Acceleration Temperature Electric fields

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An effective buffer space management in Serial RapidIO endpoint

An effective buffer space management in Serial RapidIO endpo...

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Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Wu Fengfeng Jia Song Wang Yuan Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

RapidIO is a high performance open standard for the next-generation embedded interconnection technology. In this paper, an improved pivotal buffer core which plays a crucial role in the RapidIO packet transmission is described in detail. It uses the four-isolated-queue as the outbound framework for better quality of service and a certain amount of blocks with sharing and binding attempts mechanism as the main inbound structure for higher space utilization. It supports the advanced transmitter-controlled flow control so as to effectively manage the buffer space. Simulation results show that the valid link data utilizations of the proposed design with transmitter-controlled flow control could be kept over 95%, comparing to the fact that those of the buffers with basic receiver-controlled flow control gradually decrease to lower than 50% in the same condition.

关键词： Aerospace electronics Receivers Protocols Integrated circuit interconnections Multiplexing Embedded systems Radiation detectors

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An oxide/silicon core/shell nanowire FET

An oxide/silicon core/shell nanowire FET

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2011 11th IEEE International Conference on Nanotechnology, NANO 2011

作者： Zhang, Lining He, Jin Ma, Chenyue Zhou, Xingye Bian, Wei Li, Lin Chan, Mansun TSRC Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China Peking University Shenzhen SOC Key Laboratory PKU-HKUST Shenzhen Institute Shenzhen China ECE Hong Kong University of Science and Technology Clearwater Bay Kowloon Hong Kong

ISBN: (纸本)9781457715143

An oxide/silicon core/shell nanowire (OSCSNW) MOSFET is proposed. Its fabrication process and performance are described in detail. The I ON/IOFF ratio of the OSCSNW is improved by more than one order of magnitude compared with traditional nanowire (TNW) devices. Excellent scaling characteristics are also observed from the OSCSNW MOSFETs with minimal threshold voltage roll-off, drain induced barrier lowing and subthreshold slope degradation. Furthermore, the high frequency characteristics of OSCSNWs are also investigated. © 2011 IEEE.

关键词： Nanowires

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