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Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

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A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel 14

A CMOS Time-of-Flight Image Sensor with High Dynamic Range D...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Yu, Shanzhe Zhang, Yacong Zhou, Fei Lu, Wengao Lei, Shuyu Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China ABAX Sensing Electronic Technology Ningbo China

ISBN: (纸本)9781665411493

To widen measuring range and suppress background light, a CMOS time-of-flight image sensor with high dynamic range digital pixel is proposed. The sensing charge is quantized by extended-counting analogue-to-digital converter (ADC) which consists of pixel coarse quantization and column fine quantization. To maximize dynamic range in limited pixel area, the coarse quantization circuit is shared by 2×2 pixels, in which a novel up/down counter with a small number of transistors is proposed. Based on the pixel circuit, a 32×32 prototype TOF imager with 12μm-pitch digital pixel is designed in 0.11μm 1P4M CMOS image sensor technology. Simulation results show that a 104.6dB dynamic range of this ADC for wide measuring range is achieved at a frame rate of 50Hz. © 2021 IEEE.

关键词： Image sensors

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry 10

Design of a Three-Dimensional Inlet Structure for Preventing...

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10th International Symposium on Next Generation Electronics, ISNE 2022

作者： Hu, Yu Li, Ya Wang, Xu Du, Ziqiang Zhang, Wenchang Yang, Xiaonan Zhengzhou University School of Electrical and Information Engineering Zhengzhou China The First Affiliated Hospital of Zhengzhou University Department of Gastroenterology Zhengzhou China Institute of Microelectronics of the Chinese Academy Key Laboratory of Microelectronic Devices and Integration Technology Beijing China

ISBN: (纸本)9781665455251

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%. © 2023 IEEE.

关键词： Cells

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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Science China(Information Sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

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An Energy-Efficient Differential Frame Convolutional Accelerator with on-Chip Fusion Storage Architecture and Pixel-Level Pipeline Data Flow

An Energy-Efficient Differential Frame Convolutional Acceler...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Zhenhui Dai Jiawei Wang Yi Zhong Kunyu Feng Cheng Zhao Yuanyuan Jiang Peiyu Chen Yuan Wang Dunshan Yu Xiaoxin Cui School of Integrated Circuits Peking University Beijing Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center Peking University Beijing School of Software and Microelectronics Peking University Beijing Beijing Advanced Innovation Center for Integrated Circuits Beijing

ISBN: (数字)9798350330991

ISBN: (纸本)9798350331004

Convolutional neural networks require a huge amount of computation in video applications. For some specific tasks, such as surveillance, differential frame convolution reuses inter-frame data and significantly reduces multiplication and accumulation. However, there are still some challenges in improving energy efficiency of differential frame convolution on chips. Firstly, differential frame convolution brings additional on-chip storage for reusing inter-frame data. Secondly, in post-processing of differential frame convolution, there are more memory accessing and arithmetic logic operations. Therefore, sparse working mode is of vital importance for the post-processing. In response to these challenges, this work proposes an on-chip fusion storage architecture for energy-efficient differential frame convolution and a pixel-level pipeline data flow that supports the sparsity of features. The simulation of our accelerator implemented in 28nm CMOS can achieve energy efficiency by 3.09× compared with other state-of-the-art works

关键词： Convolution Surveillance Pipelines Computer architecture Energy efficiency System-on-chip Convolutional neural networks

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Demonstration of Planar Geometry PIN Photodetectors with GeSi/Ge Multiple Quantum Wells Hybrid Intrinsic Region on a Ge-on-Insulator Platform

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ACS Applied Electronic Materials 2025年第11期7卷 5205-5216页

作者： Junhao Du Xuewei Zhao Yuanhao Miao Jiale Su Ben Li Xiangliang Duan Tianyu Dong Jiahan Yu Hongxiao Lin Yuhui Ren Bo Wang Tianchun Ye Henry H. Radamson Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China；School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou 510535 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China；Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou 510535 China；School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China

In this article, the first demonstration of planar geometry Ge PIN short-wave infrared (SWIR) photodetectors (PDs) on a germanium-on-insulator (GOI) platform has been presented. The intrinsic layer Ge contains four Ge0.86Si0.14multiple quantum wells (MQWs). The structural characteristics, material quality, and interface integrity of the PDs were investigated by using high-resolution transmission electron microscopy (HR-TEM) and high-resolution X-ray diffraction (HR-XRD). The devices exhibited a 3.12 mA/cm2dark current density and a low bulk leakage current density of 0.94 mA/cm2at −1 V. The integration of tensile-strained GeSi/Ge MQWs significantly enhanced the responsivity while maintaining a relatively lower dark current density, thereby broadening the spectral response range to 1700 nm. The notably high responsivities at 1310 and 1550 nm are 0.99 and 0.78 A/W, respectively, corresponding to external quantum efficiencies (EQEs) of 93.7 and 62.4%. Furthermore, the optical confinement effect inherent to this type of GOI structure contributed to a pronounced enhancement in the responsivity across the O, E, S, and C bands, with a peak responsivity of 1.11 A/W at 1475 nm. These findings underscore the potential of CMOS-compatible GOI platforms with MQWs hybrid intrinsic regions for diversified optoelectronic applications. Additionally, the demonstrated planar geometry Ge PIN PDs on insulator substrates exhibit excellent prospects for high-resolution SWIR imaging, which pave the way for advancements in next-generation photonic and sensing technologies.

关键词： Ge0.86Si0.14/Ge-MQWs GOI PIN photodetectors planar geometry SWIR

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3D Reservoir Computing with High Area Efficiency (5.12 TOPS/mm2) Implemented by 3D Dynamic Memristor Array for Temporal Signal Processing

3D Reservoir Computing with High Area Efficiency (5.12 TOPS/...

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2022 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2022

作者： Sun, Wenxuan Zhang, Woyu Yu, Jie Li, Yi Guo, Zeyu Lai, Jinru Dong, Danian Zheng, Xu Wang, Fei Fan, Shaoyang Xu, Xiaoxin Shang, Dashan Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China School of Microelectronics China

ISBN: (纸本)9781665497725

In this work, we realized a three-dimensional (3D) reservoir computing (RC) by utilizing the I-V nonlinearity and short-term memory of the dynamic memristor in 4-layer vertical array. The cycle-to-cycle variation of the dynamic reservoir is improved by parallel memristor configuration. The dimensionality of the reservoir space is increased by input strategy design. After the hardware-software co-optimization, the proposed 3D RC system exhibits high recognition accuracy (90%), low energy consumption (-0.78 pJ /operation), and high area efficiency (5.12 TOPS/mm2). © 2022 IEEE.

关键词： Memristors

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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International Electron devices Meeting (IEDM)

作者： Chao Li Jie Yu Xumeng Zhang Zhaohao Zhang Fangduo Zhu Siyuan Ouyang Pei Chen Lingli Cheng Gaobo Xu Qingzhu Zhang Huaxiang Yin Qi Liu Ming Liu State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000x and 4x improvements than GPU in power consumption and memory overhead.

关键词： Performance evaluation Power demand Neuromorphics Memory management Graphics processing units Trajectory Vehicle dynamics Synapses Long short term memory FeFETs

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Active tunable terahertz bandwidth absorber based on single layer graphene

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Communications in Theoretical Physics 2023年第4期75卷 106-113页

作者： Wenxin Li Yingting Yi Hua Yang Shubo Cheng Wenxing Yang Huafeng Zhang Zao Yi Yougen Yi Hailiang Li School of Physics and Optoelectronic Engineering Yangtze UniversityJingzhou 434023China College of Physics and Electronics Central South UniversityChangsha 410083China School of Science Lanzhou University of TechnologyLanzhou 730050China Joint Laboratory for Extreme Conditions Matter Properties Southwest University of Science and TechnologyMianyang 621010China Key Laboratory of Microelectronic Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

In this paper,an active tunable terahertz bandwidth absorber based on single-layer graphene is proposed,which consists of a graphene layer,a photo crystal plate,and a gold *** the Fermi energy(Ef)of graphene is 1.5 eV,the absorber shows high absorption in the range of 3.7 THz–8 THz,and the total absorption rate is 96.8%.By exploring the absorption mechanism of the absorber,the absorber shows excellent physical *** absorber also shows good adjustability by changing the Efof *** means that the absorber exhibits excellent tunability by adjusting the physical parameters and Efof the ***,the absorber is polarization independent and insensitive to the incident *** fine characteristics of the absorber mean that the absorber has superior application value in many fields such as biotechnology and space exploration.

关键词： metamaterials active tunable bandwidth absorber terahertz graphene

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Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

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Nano Research 2022年第4期15卷 3667-3674页

作者： Peng Yuan Ge-Qi Mao Yan Cheng Kan-Hao Xue Yunzhe Zheng Yang Yang Pengfei Jiang Yannan Xu Yuan Wang Yuhao Wang Yaxin Ding Yuting Chen Zhiwei Dang Lu Tai Tiancheng Gong Qing Luo Xiangshui Miao Qi Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesNo.3Beitucheng West RoadBeijing 100029China University of Chinese Academy of Sciences 19 Yuquan RoadBeijing 100049China School of Integrated Circuits School of Optical and Electronic InformationHuazhong University of Science and Technology1037 Luoyu RoadWuhan 430074China Key Laboratory of Polar Materials and Devices(MOE) Department of ElectronicsEast China Normal University100 Guilin RoadShanghai 430079China Department of Mathematics and Theories Peng Cheng LaboratoryNo.2Xingke 1st StreetShenzhen 518055China

Hafnia-based ferroelectrics have greatly revived the field of ferroelectric memory(FeRAM),but certain reliability issues must be satisfactorily resolved before they can be widely applied in commercial *** particular,the imprint phenomenon severely jeopardizes the read-out reliability in hafnia-based ferroelectric capacitors,but its origin remains unclear,which hinders the development of its recovery *** this work,we have systematically investigated the imprint mechanism in TiN/Hf_(0.5)Zr_(0.5)O_(2)(HZO)/TiN ferroelectric capacitors using experiments and first-principles *** is shown that carrier injection-induced charged oxygen vacancies are at the heart of imprint in HZO,where other mechanisms such as domain pinning and dead layer are less *** imprint model based on electron de-trapping from oxygen vacancy sites has been proposed that can satisfactorily explain several experimental facts such as the strong asymmetric imprint,leakage current variation,and so *** on this model,an effective imprint recovery method has been proposed,which utilizes unipolar rather than bipolar voltage *** remarkable recovery performances demonstrate the prospect of improved device reliability in hafnia-based FeRAM devices.

关键词： hafnia-based ferroelectric imprint build-in electric field oxygen vacancy recovery

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