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2021 International Conference on Internet of Things and Machine Learning, IoTML 2021

作者： Xie, Zhengjiang Lou, Li Jia, Kunpeng Jiao, Binbin School of Computing Xi'an Shiyou University Xi'an Shanxi710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (数字)9781510653269

ISBN: (纸本)9781510653252

Gesture is a form of non-verbal communication and has many applications, such as sign language communication between deaf and dumb people, robot control, human-computer interaction and medical applications. The commonly used acquisition equipment in gesture recognition is the visible light camera, but illumination has a great impact on the accuracy of the collected data classification processing. The whole project designed a complete end-to-end edge computing system design and deployment, the system can achieve from gesture image acquisition to gesture recognition. A dataset of 3600 thermal images was created, and each gesture had 1200 thermal images with only 4∗4 resolution. These images were upsampled by bilinear interpolation and fed into a new lightweight deep learning model combining deep residual learning with ShuffleNet V2 for gesture classification. The system achieved 98.63% accuracy on the test data set. Another advantage is that it is based on thermal imaging, so the accuracy is not affected by background lighting conditions. © SPIE.

关键词： Deep learning

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On-Chip Incremental Learning based on Unsupervised STDP Implementation

On-Chip Incremental Learning based on Unsupervised STDP Impl...

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IEEE International Conference on Artificial Intelligence circuits and Systems (AICAS)

作者： Guang Chen Jian Cao Shuo Feng Zilin Wang Yi Zhong Qibin Li Xiongbo Zhao Xing Zhang Yuan Wang School of Software and Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center Peking University Beijing China School of Integrated Circuits Peking University Beijing China Beijing Aerospace Automatic Control Institute Beijing China

ISBN: (数字)9798350383638

ISBN: (纸本)9798350383645

Spiking neural network (SNN), a bio-inspired neuron network, utilizes a learning rule named spike-timing-dependent plasticity (STDP) to achieve high-performance unsupervised learning. However, it may suffer from catastrophic forgetting when the distribution of new data significantly differs from that of old data. To address this issue, an incremental learning implementation for ship classification is presented in this paper. We develop an incremental learning algorithm based on STDP and corresponding platform. A competitive SNN is built into our algorithm, and add-STDP is utilized to update the weights of network for efficient learning. To enhance learning performance, we incorporate weight decay. And to avoid catastrophic forgetting, we incorporate data replay. The corresponding learning platform consists of the FPGA Zynq 7100 and the STDP neuromorphic prototype chip, and our algorithm is executed on the chip. We evaluate the ship classification task on our platform, which demonstrates the superior potential of our on-chip implementation for incremental learning.

关键词： Incremental learning Neuromorphics Neurons Prototypes Spiking neural networks Classification algorithms System-on-chip

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Impact of O_(2)post oxidation annealing on the reliability of SiC/SiO_(2)MOS capacitors

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Chinese Physics B 2021年第7期30卷 461-466页

作者： Peng Liu Ji-Long Hao Sheng-Kai Wang Nan-Nan You Qin-Yu Hu Qian Zhang Yun Bai Xin-Yu Liu Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The effects of dry O_(2)post oxidation annealing(POA)at different temperatures on SiC/SiO_(2)stacks are comparatively studied in this *** results show interface trap density(Dit)of SiC/SiO_(2)stacks,leakage current density(Jg),and time-dependent dielectric breakdown(TDDB)characteristics of the oxide,are affected by POA temperature and are closely ***,Dit,Jg,and inverse median lifetime of TDDB have the same trend against POA temperature,which is instructive for SiC/SiO_(2)interface quality ***,area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.

关键词： SiC O_(2)post oxidation annealing interface traps MOS

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Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

Selective Wet-Etching of GESI in Multi-Layer GESI/SI Stacks

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Tian, Jiajia Cao, Zhijun Zhang, Qingzhu Wu, Cinan Zhang, Zhaohao Yin, Huaxiang College of Big Data and Information Engineering Guizhou University Guiyang 550025 China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integration Technology Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the channel release process of stacked gate-all-around (GAA) nanosheet (NS) devices fabricated based on the epitaxial scheme is investigated extensively. The effects of annealing temperatures, thicknesses of the GeSi layers and liquid nitrogen processing on the wet selective etching of GeSi in multi-layer GeSi/Si samples are mainly studied. It is found that the corrosion rate of the GeSi in GeSi/Si stacks samples first decreases and then increases with the increasement of rapid thermal annealing (RTA) temperatures, and the corrosion rate is the slowest at 600 ° C. In addition, the thicker the epitaxial GeSi, the faster the corrosion rate. Furthermore, we found that the corrosion rate of the samples after liquid nitrogen processing treatment was faster than that without treatment. The research provides a good reference significance for the design and manufacture of advanced stacked GAA Si NS devices. © 2022 IEEE.

关键词： Corrosion rate

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Design and fabrication of etchless lithium niobate photonic crystal nanobeam cavity for efficient photon manipulation 15

Design and fabrication of etchless lithium niobate photonic ...

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15th International Conference on Information Optics and Photonics, CIOP 2024

作者： Jiang, Zhi Yao, Danyang Gao, Yu Ran, Xu Wang, Jianguo Gan, Xuetao Liu, Yan Hao, Yue Han, Genquan State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Faculty of integrated circuits Xidian University Xi’an710071 China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technology Shaanxi Key Laboratory of Optical Information Technology School of Physical Science and Technology Northwestern Polytechnical University Xi’an710129 China Hangzhou Institute of Technology Xidian University Hangzhou311200 China

ISBN: (数字)9781510686175

ISBN: (纸本)9781510686168

Recently, a novel approach that uses low-refractive-index polymers as loading materials coated on lithium niobate (LN) can dramatically simplify fabrication challenges for etching LN. On this platform, various devices operating in the transverse magnetic (TM) polarized state based on optical bound states in the continuum (BIC) have been demonstrated. However, in this configuration, the propagation loss of TM mode exhibits sensitivity to waveguide width, which limits design flexibility in waveguide structures. To this end, we designed transverse magnetic electric (TE) polarized photonic crystal structures with the same fabrication process using a y-cut LN on insulator (LNOI) substrate. The fabricated photonic crystal nanobeam cavity (PCNBC) achieves a Q factor over one order of magnitude higher than any previously reported PCNBCs on the etchless LNOI platform and retains a high transmission. To verify the strong photon manipulation ability, additional experiments such as thermo-optic tuning and optical bistability generation have been made. These results demonstrate the potential of our devices for efficient on-chip photon manipulation. © 2024 SPIE.

关键词： Optical bistability

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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Science China(Information Sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG Xuepeng ZHAN Junyu ZHANG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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Low power and high uniformity of HfOx-based RRAM via tip-enhanced electric fields

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Science China(Information Sciences) 2019年第10期62卷 164-170页

作者： Xiaokang LI Baotong ZHANG Bowen WANG Xiaoyan XU Yuancheng YANG Shuang SUN Qifeng CAI Shijie HU Xia AN Ming LI Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University

In this paper, the HfOx-based resistive random access memory（RRAM） devices with sub-100 nm pyramid-type electrodes were fabricated. With the help of tip-enhanced electric field around the pyramid-type electrodes, it was experimentally demonstrated that the novel devices have better cycle-to-cycle variation control, lower forming/set voltage（1.97/0.7V） and faster switching speed（≤30 ns under 0.9V pulse） as well as better endurance reliability than conventional flat electrode resistive memory devices. In addition,the novel RRAM is experimentally demonstrated with independence of electrode number for the first time to present great potential in scaling down. This novel structure metal-oxide based RRAM will be suitable for the future low-power non-volatile memory application.

关键词： RRAM pyramid-type electrode variation reliability switching speed conducting filament

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Improved turn-on behavior in a diode-triggered silicon-controlled rectifier for high-speed electrostatic discharge protection

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Science China(Information Sciences) 2019年第6期62卷 79-86页

作者： Lizhong ZHANG Yuan WANG Yize WANG Xing ZHANG YANDong HE Key Laboratory of Microelectronic Devices and Circuits (MoE) Institute of MicroelectronicsPeking University

A conventional diode-triggered silicon-controlled rectifier(DTSCR) structure with a layout strategy for electrostatic discharge(ESD) protection is presented and confirmed in a 65-nm CMOS *** modified device is featured by a scaled-down trigger-diode string, which shortens its turn-on time using a variable scaling factor. To confirm the parasitic resistance adjustments of the modified DTSCR, transmission line pulsing(TLP)/very fast transmission line pulsing(VF-TLP) tests and simulations are performed on the device. Compared to a conventional DTSCR, this structure exhibits an improved turn-on speed and robustness, which are suitable for I/O protection of ESD events in the nanosecond range, particularly the charged-device model(CDM) event.

关键词： diode triggered silicon controlled rectifier(DTSCR) electrostatic discharge(ESD) transmission line pulsing(TLP) very fast transmission line pulsing(VF-TLP) turn-on behavior

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Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

Influence Of B Ions Doping on the Performance of P-Type Sili...

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Hu, Jiawei Zhang, Qingzhu Wei, Shuhua Zhang, Jing Zhang, Zhaohao Liu, Jin Biao Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Key Laboratory of Microelectronic Devices and Integration Technology Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (Vth) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity. © 2022 IEEE.

关键词： Field effect transistors

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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