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检索条件"机构=Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits"

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Recovery characteristics of NBTI of pMOSFETs with oxynitride dielectrics under drain bias

Recovery characteristics of NBTI of pMOSFETs with oxynitride...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han Jinfeng Kang L. F. Zhang Z. W. Zhu C. C. Liao H. M. Wu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Semiconductor Manufacturing International Corporation Shanghai China

ISBN: (纸本)9781424421855

In this paper, the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that, the drain bias not only worsens the NBTI degradation in high |V ds | region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale, the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

关键词： Niobium compounds Titanium compounds MOSFETs Degradation Stress measurement Phase measurement Dielectric measurements microelectronics circuits Negative bias temperature instability

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Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited Aluminum for gate oxide

Enhanced device performance of AlGaN/GaN HEMTs using thermal...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hongwei Chen Jinyan Wang Chuan Xu Min Yu Yang Fu Zhihua Dong Fujun Xu Yilong Hao Cheng P.Wen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Research Center for Wide Gap Semiconductor School of PhysicsPeking University

We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor（MOS-HEMT） using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple,and less expensive than electron cyclotron resonance（ECR） plasma oxidation of Al or atomic layer deposited（ALD） *** X-ray Photoelectron Spectroscopy（XPS） Ols spectrum showed that the AlO with a bandgap of 7.8 eV was obtained in this *** resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage,larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor（HEMT） of similar *** MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.

关键词： AlGaN/GaN MOS-HEMTs leakage current thermal oxidation electron-beam evaporation

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The parasitic effects induced by the contact in RRAM with MIM structure

The parasitic effects induced by the contact in RRAM with MI...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Lijie Zhang Ru Huang Albert Z. H. Wang Dake Wu Runsheng Wang Yongbian Kuang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Department of Electrical Engineering University of California Riverside CA USA

ISBN: (纸本)9781424421855;9781424421862

This paper has reported a programmable switch composed of copper-doped-SiO 2 sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode (TE), while with regard to the cell without TE, no rectifying-like I-V characterization was observed. This rectifying-like I-V curve is properly caused by electrode contact. To further prove the effect of TE, R ON retention behavior of the device with TE and without TE were investigated. The testing results clearly showed that the R ON retention property of device with TE was worse than that without TE. We propose a model for the interface between top electrode and copper-doped-SiO 2 to interpret this rectifying-like performance, which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and resistive-material. The results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MIM RRAM design.

关键词： Copper Electrodes Tellurium Voltage Annealing Contacts Switches Random access memory Tungsten Silicon

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The Parasitic Effects Induced by the Contact in RRAM with MIM Structure

The Parasitic Effects Induced by the Contact in RRAM with MI...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Lijie Zhang Ru Huang Albert Z.H.Wang Dake Wu Runsheng Wang Yongbian Kuang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Dept.of Electrical Engineering University of CaliforniaRiversideCA 92521USA

This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode（TE）,while with regard to the cell without TE,no rectifying-like I-V characterization was *** rectifying-like I-V curve is properly caused by electrode *** further prove the effect of TE,R retention behavior of the device with TE and without TE were *** testing results clearly showed that the R retention property of device with TE was worse than that without *** propose a model for the interface between top electrode and copper-doped-SiO to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and *** results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MTM RRAM design.

关键词： The Parasitic Effects Induced by the Contact in RRAM with MIM Structure MIM

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Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited aluminum for gate oxide

Enhanced device performance of AlGaN/GaN HEMTs using thermal...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： Hongwei Chen Jinyan Wang Chuan Xu Min Yu Yang Fu Zhihua Dong Fujun Xu Yilong Hao Cheng P. Wen Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Research Center for Wide Gap Semiconductor School of Physics Peking University China

ISBN: (纸本)9781424421855

We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple, and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al 2 O 3 . The X-ray Photoelectron Spectroscopy (XPS) Ols spectrum showed that the Al 2 O 3 with a bandgap of 7.8 eV was obtained in this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage, larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.

关键词： Aluminum gallium nitride Gallium nitride HEMTs MODFETs Oxidation Dielectrics Electrons Cyclotrons Resonance Plasma x-ray sources

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Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Oxide-based RRAM switching mechanism: A new ion-transport-re...

引用

International Electron devices Meeting (IEDM)

作者： B. Gao S. Yu N. Xu L.F. Liu B. Sun X.Y. Liu R.Q. Han J.F. Kang B. Yu Y.Y. Wang Institute of Microelectronics Ministry of Education Peking University and Key Laboratory of Microelectronic Devices and Circuits Beijing China College of Nanoscale Science and Engineering State University of New York Albany NY USA

This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.

关键词： Spontaneous emission Equations Electrons microelectronics Random access memory Low voltage Scalability Electrodes Bismuth Boundary conditions

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An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

An analytic surface potential based non-charge-sheet poly-Si...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Jinhua Hu Jian Zhang Lining Zhang Feng Liu Jin He TSRC Key Laboratory of Microelectronic Devices and Institute of Microelectronics School of Electronics and Computer Science Peking University China Peking University Beijing Beijing CN

An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poissonpsilas equation with dopant, mobile, and the trap charge terms is first solved to obtain accurate yet continuous channel potentials physically. An analytic non-charge-sheet drain current model is then derived from Pao-Sahpsilas dual integral as a function of the channel potentials at the source end and drain end. The extensive comparison between the presented model prediction and the 2-D numerical simulation is done, proving accuracy of the developed model. The presented channel potential relation and the physics based TFT drain current model may be useful for device scientists and circuit engineers to further understand TFT device physics and test TFT circuit performance.

关键词： Thin film transistors Substrates MOSFET circuits Predictive models Physics Helium Semiconductor process modeling Poisson equations Numerical simulation Circuit testing

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Modeling of dynamic threshold voltage in high K gate stack and the application in FinFET reliability

Modeling of dynamic threshold voltage in high K gate stack a...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Chenyue Ma Bo Li Lining Zhang Jin He Xing Zhang Xinnan Lin TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelctronicsSchool of Electronics and Computer Science Peking University China Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University Shenzhen China

A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (I d ) degradation in FinFET is much more obvious than normal MOSFETs with the same processes and the variation of I d is slower in higher temperature. However, the dynamic threshold voltage in high K stack seems not affect the delay time of reverser simulated by HSPICE.

关键词： Threshold voltage High K dielectric materials High-K gate dielectrics FinFETs Helium Stress Electron traps Circuit simulation Degradation MOSFETs

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A Numerical Method to Simulate THz-Wave Generation and Detection of Field-effect Transistors

A Numerical Method to Simulate THz-Wave Generation and Detec...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xuehao Mou Yu Chen Chenyue Ma Yuchi Che Jin He TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelctronicsSchool of Electronics and Computer SciencePeking University Micro & Nano Electric Device and Integarted Technology Group the Key Laboratory of Integrated MicrosystemsShenzhen Graduate School of Peking University

＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results are compared with the existing theories,proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.

关键词： THz-wave FET Hydrodynamic Equations Numerical Simulation

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FinFET Reliability Study by Forward Gated-Diode Method

FinFET Reliability Study by Forward Gated-Diode Method

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Chenyue Ma Bo Li Yiqun Wei Lining Zhang Jin He Xing Zhang Xinnan Lin TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelctronicsSchool of Electronics and Computer SciencePeking University Micro- & Nano Electric Device and Integrated Technology Group The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School of Peking University

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in the body current(I) versus gate voltage(V) characteristic,therefore the variation of interface states with stress time was *** the Hot Carrier Injection(HO) stress condition,the evident difference of the output current degradation was achieved by interchanging the source and drain of *** phenomenon indicated the asymmetric distribution of the interface states along the channel,and the deduction was demonstrated by extracting the distribution of the interface states ***,the generation of the interface states induce by HCI was estimated from the output characteristic.

关键词： FinFET G-R current stress interface state distribution reliability issue

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