An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poisso...
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An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poissonpsilas equation with dopant, mobile, and the trap charge terms is first solved to obtain accurate yet continuous channel potentials physically. An analytic non-charge-sheet drain current model is then derived from Pao-Sahpsilas dual integral as a function of the channel potentials at the source end and drain end. The extensive comparison between the presented model prediction and the 2-D numerical simulation is done, proving accuracy of the developed model. The presented channel potential relation and the physics based TFT drain current model may be useful for device scientists and circuit engineers to further understand TFT device physics and test TFT circuit performance.
A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is app...
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A modeling study of dynamic threshold voltage in high K gate stack is reported in this paper. Both slow transient (STCE) and fast transient charging effect (FTCE) are included in this model. Finally, this model is applied in FinFET reliability and circuit performances are simulated. The result shows that, the drain circuit (I d ) degradation in FinFET is much more obvious than normal MOSFETs with the same processes and the variation of I d is slower in higher temperature. However, the dynamic threshold voltage in high K stack seems not affect the delay time of reverser simulated by HSPICE.
＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results ar...
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＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results are compared with the existing theories,proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in ...
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Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in the body current(I) versus gate voltage(V) characteristic,therefore the variation of interface states with stress time was *** the Hot Carrier Injection(HO) stress condition,the evident difference of the output current degradation was achieved by interchanging the source and drain of *** phenomenon indicated the asymmetric distribution of the interface states along the channel,and the deduction was demonstrated by extracting the distribution of the interface states ***,the generation of the interface states induce by HCI was estimated from the output characteristic.
A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simula...
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A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.
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