检索结果-内蒙古大学图书馆

Science China Materials 2024年第7期67卷 2329-2334页

作者：丁森川张金风苏凯任泽阳陈军飞杨智清张进成郝跃 State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Xidian-Wuhu Research Institute Wuhu 241002China

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离... 详细信息

辐射探测器是用来研究超宽禁带半导体金刚石中载流子动力学的重要表征工具.本文采用微波等离子体化学气相沉积(MPCVD)方法在高温高压(HTHP)金刚石衬底上制备了高质量的单晶金刚石.我们通过压缩等离子体球来提高微波功率密度,优化了等离子体中的碳氢(C/H)比,并显著降低了金刚石外延层中的杂质和位错含量.(004)面X射线衍射摇摆曲线的半高宽(FWHM)仅为15弧秒,在室温下的光致发光光谱中没有检测到杂质发光带.使用制备的200μm厚的外延金刚石膜制成的辐射探测器可对α-粒子响应,其电子的电荷收集效率为97.03%,能量分辨率为2.1%,空穴的电荷收集效率和能量分辨率为97.86%和1.5%.此外,电子和空穴的迁移率和寿命的乘积分别达到8×10^(−5)和4.1×10^(−4) cm^(2) V^(−1).此方法有望满足商用金刚石辐射探测器对性能和成本控制的严苛要求.

关键词： single-crystal diamond radiation detectors high-power-density epitaxy charge collection efficiency

来源：评论

学校读者我要写书评

暂无评论

High-Performance Dual-Gate In-Sn-Zn-O Thin-Film Transistors With Optimized Gate Dielectrics

引用

IEEE Journal of the Electron devices Society 2025年

作者： Liao, Fuxi Wu, Zijing Lu, Congyan Yang, Guanhua Chen, Kaifei Liu, Menggan Lu, Wendong Mao, Naide Li, Zihan Zhang, Xuanming Zhang, Kaiping Lu, Nianduan Li, Ling University of Science and Technology of China School of Microelectronics Hefei230026 China Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

*** this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) is experimentally investigated. It is found that compared to high-temperature deposited TGI, the ITZO TFTs with lower-temperature-deposited (1000C) Al2O3 TGI exhibited an improved electrical characteristic, including higher on/off ratio, lower subthreshold swing (SS), etc. Due to the low bonding energy, the Sn-O bond is easily broken during the high-temperature TGI deposition and then more oxygen vacancies generate, doping the ITZO channel failed to turn off in the switching operation of transistor. Based on these insights, high-performance DG ITZO TFTs are fabricated with optimized TGI, achieving a low sub-threshold swing of 141 mV/decade, an ultrahigh on/off current ratio over 109, a high mobility (μ) of 60.8 cm2/VEs, a small threshold voltage shift (ΔVth) of 0.30 V under positive bias stress (5 V, 3600 s) and a small threshold voltage shift of -0.82 V under negative bias stress (-5 V, 3600 s). © 2013 IEEE.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

High Frame Rate High Linearity Low Power DROIC for 30μm-Pitch Cryogenic Infrared FPAs 14

High Frame Rate High Linearity Low Power DROIC for 30μm-Pit...

引用

14th IEEE International Conference on ASIC, ASICON 2021

作者： Niu, Yuze Gu, Yuting Liu, Fengqing Zhou, Fei Yu, Shanzhe Lu, Wengao Zhang, Yacong Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China

ISBN: (纸本)9781665411493

This paper presents a pixel circuit with high frame rate, high linearity, and low power consumption. This pixel circuit is applied in a digital readout integrated circuit (DROIC) of 320×256 infrared focal plane array(IRFPA). The proposed single slope ADC is deployed in the proposed pixel circuit, which improves linearity and power consumption of the DROIC. The proposed pixel circuit is fabricated using 180nm 1P5M CMOS process with 30μm pixel pitch. Pixel power consumption is 406nW. Frame rate of the proposed DROIC is 1KHz. Nonlinearity of the quantization is lower than 0.8%. © 2021 IEEE.

关键词： Electric power utilization

来源：评论

学校读者我要写书评

暂无评论

Residual Spiking Neural Network on a Programmable Neuromorphic Hardware for Speech keyword Spotting 16

Residual Spiking Neural Network on a Programmable Neuromorph...

引用

16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

作者： Zou, Chenglong Cui, Xiaoxin Feng, Shuo Chen, Guang Wang, Xinan Wang, Yuan Peking University Key Laboratory of Microelectronics Devices and Circuits School of Integrated Circuits Beijing100871 China Peking University Shenzhen Graduate School Key Laboratory of Integrated Microsystem School of Ece Shenzhen518055 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

In recent years, spiking neural networks (SNNs) based on neuromorphic system have shown impressive scalability and energy superiority on lots of intelligent tasks, such as image classification, language understanding and human-computer interaction. In this paper, we propose a novel residual SNN (R-SNN) architecture for speech keyword spotting, which can be easily deployed on a programmable neuromorphic chip. Our experimental results show the proposed R-SNN can achieve 92.08% classification accuracy with about 183 words/second run-time speed and 0.156 mJ/word power performance. © 2022 IEEE.

关键词： Neural networks

来源：评论

学校读者我要写书评

暂无评论

Low Power Readout Integrated Circuit with PFM-based ADCs Employing Residue Quantization for Uncooled Infrared Imagers 14

Low Power Readout Integrated Circuit with PFM-based ADCs Emp...

引用

14th IEEE International Conference on ASIC, ASICON 2021

作者： Zhou, Ye Yu, Shanzhe Lu, Wengao Yu, Dunshan Zhang, Yacong Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China

ISBN: (纸本)9781665411493

This paper presents a low power readout integrated circuit (ROIC) with 12-bit two-stage column-wise ADCs for 25μm-pitch 640×480 silicon diode uncooled infrared imagers. A novel two-stage column-wise ADC composed of a pulse frequency modulation (PFM)-based ADC for coarse conversion and a single-slope ADC for fine conversion is proposed. The proposed ADC meets the requirements for power budget, conversion rate, and linearity performance in column-wise ADC application for uncooled infrared imagers. The PFM-based ADC adopts a passive integrator and an optimized comparator structure to reduce static power consumption. The ROIC is designed in standard 0.18μm 1P5M CMOS process. Simulation shows that the SNR and nonlinearity is 74dB and 0.12%, respectively. Power consumption of the ROIC is 54mW and each column ADC consumes only 10μW. © 2021 IEEE.

关键词： Budget control

来源：评论

学校读者我要写书评

暂无评论

A 145GHz reconfigurable pillbox transmitarray design 15

A 145GHz reconfigurable pillbox transmitarray design

引用

15th International Conference on Microwave and Millimeter Wave Technology, ICMMT 2023

作者： Cao, Shuo Li, Bin Peng, Kaiwen Tan, Chen Yu, Weihua Beijing Institute of Technology School of Integrated Circuits and Electronics Beijing Key Laboratory of Millimeter-Wave and Terahertz Technology Beijing10081 China Bit Chongqing Institute of Microelectronics and Microsystems Chongqing China

ISBN: (纸本)9798350338874

A 145GHz reconfigurable transmitarray based on pillbox structure has been proposed in this paper. The current flow direction on the element radiation patch can be changed by controlling the working state of the two GaAs Schottky diodes, which can obtain a 180° phase difference. A 2 × 20 transmitarray with pillbox has been designed based on this *** beam direction can be changed with a range of ±30°. Meanwhile, the maximum gain of the transmitarray is 19.28dBi and the maximum aperture sufficiency can reach 52%. © 2023 IEEE.

关键词： Gallium arsenide

来源：评论

学校读者我要写书评

暂无评论

A 16-bit Pixel-level ADC Based on Ring Oscillator for 30μm Pitch 320 ×256 LWIR FPAs 14

A 16-bit Pixel-level ADC Based on Ring Oscillator for 30μm ...

引用

14th IEEE International Conference on ASIC, ASICON 2021

作者： Niu, Yuze Liu, Bingxin Kong, Jiaqi Zhou, Fei Yu, Shanzhe Lu, Wengao Zhang, Yacong Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China

ISBN: (纸本)9781665411493

A low-power and high-dynamic range ADC-based 320×256 size digital readout integrated circuit for infrared focal plane arrays is proposed in this paper. Compared with the traditional structure, the proposed pixel-level ADC structure based on ring oscillator can achieve higher dynamic range and lower power consumption. The design is based on 0.18μm 1P5M CMOS process, and the pixel circuit pitch is 30μm. The simulation results show that the average power consumption of the proposed single pixel-level ADC is 1.36μW. The charge handling capacity of the pixel is 2.8Ge-;the dynamic range is 96.32dB, and the non-linearity is 0.76%. © 2021 IEEE.

关键词： Pixels

来源：评论

学校读者我要写书评

暂无评论

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 A/m (Vth+ 1 V), Well-performed Thermal Stability up to 120 for Low Latency, High-density 2T0C 3D DRAM Application

Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD wi...

引用

2022 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2022

作者： Duan, Xinlv Huang, Kailiang Feng, Junxiao Sun, Ying Lu, Congyan Chen, Chuanke Jiao, Guangfan Lin, Xinpeng Shao, Jinhai Yin, Shihui Sheng, Jiazhen Wang, Zhaogui Zhang, Wenqiang Chuai, Xichen Niu, Jiebin Wang, Wenwu Wu, Ying Jing, Weiliang Wang, Zhengbo Xu, Jeffrey Yang, Guanhua Geng, Di Li, Ling Liu, Ming Institute of Microelectronics of the Chinese Academy of Sciences Key Laboratory of Microelectronics Devices and Integrated Technology Beijing China Huawei Technologies Co. LTD. China

ISBN: (纸本)9781665497725

For the first time, vertical channel-all-around (CAA) IGZO FET is scaled down to an active footprint of less than 50×50 nm2. With optimized IGZO thickness (-3 nm) and high-K dielectric (HfOx), high current density of 32.8 A/m at Vth +1 V with subthreshold swing of 92 mV/dec is achieved in the IGZO CAA FET with channel length of 55 nm and critical dimension (CD) of 50 nm. Good thermal stability and reliability is also demonstrated by temperature variation tests and positive-bias-temperature-stress (PBTS) from -40 to 120 . Our results show that CAA IGZO FET is a promising candidate for the high-density, high-performance 3D DRAM beyond 1a nodes in the future. © 2022 IEEE.

关键词： Thermodynamic stability

来源：评论

学校读者我要写书评

暂无评论

Proton radiation effects on high-speed silicon Mach-Zehnder modulators for space application

引用

Science China(Information Sciences) 2022年第12期65卷 301-312页

作者： Changhao HAN Zhaoyi HU Yuansheng TAO Engang FU Yandong HE Fenghe YANG Jun QIN Xingjun WANG State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Peking University State Key Laboratory of Nuclear Physics and Technology School of Physics Peking University Institute of Microelectronics School of Integrated Circuits Peking University Peking University Yangtze Delta Institute of Optoelectronics Frontier Science Center for Nano-optoelectronics Peking University Peng Cheng Laboratory

In this paper, performance degradation effects on high-speed silicon Mach-Zehnder modulators under proton radiation were investigated for future space environment applications. The test devices were exposed to 3-MeV protons of three fluence levels(5×1013, 2×1014, and 5×1015ions/cm2), which is comparable to the radiation amount for operating in a harsh space environment after several decades. The performance of the silicon modulator after radiation was characterized in terms of modulation efficiency and eye *** results illustrate that the modulation efficiency is significantly reduced after proton radiation and shows an obvious decrease with increasing radiation fluence. The extinction ratios of the on-off keying（OOK） eye diagram are obviously dropped with increasing radiation fluence and correspond well to modulation efficiency degradation. Furthermore, three representative states for data transmission are demonstrated under three fluences, from still working to the critical state and eventually complete fail. Displacement damage and ionization damage are the two major mechanisms during proton radiation, which lead to the bulk defects and accumulating defect charges and cause performance degradation of silicon Mach-Zehnder modulators.

关键词： silicon Mach-Zehnder modulator proton radiation space application silicon photonics optical communication

来源：评论

学校读者我要写书评

暂无评论

Growth,characterization,and transport calculation of Ge/SiGe heterojunction:strategy for the growth of undoped Ge quantum wells

引用

Journal of Semiconductors 2024年第12期45卷 62-70页

作者： Yiwen Zhang Jun Deng Zonghu Li Xinyou Liu Haiou Li Baochuan Wang Jun Luo Zhenzhen Kong Gang Cao Guoping Guo Chao Zhao Guilei Wang Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of SciencesBeijing 100029China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China School of Electronic Electrical and Communication Engineering University of Chinese Academy of SciencesBeijing 100049China Hefei National Laboratory University of Science and Technology of ChinaHefei 230088China CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China

Ge/SiGe heterostructure quantum wells play a pivotal role in the pursuit of scalable silicon-based *** varying compressive strains within these quantum wells profoundly influence the physical characteristics of the qubits,yet this factor remains largely unexplored,driving our research *** this study,we utilized RP-CVD(Reduced Pressure Chemical Vapor Deposition)to grow Ge quantum wells with varied compressive strain,proposing growth schemes for lightly-strained(ε∥=-0.43%)QW(quantum well),standard-strained(ε∥=-0.61%)QW,and heavily-strained(ε∥=-1.19%)*** comprehensive material characterization,particularly employing the low-temperature magneto-transport measurements,we derived the percolation densities ranging from 4.7×10^(10) to 14.2×10^(10) cm^(-2) and mobilities from 3.382×10^(5) to 7.301×10^(5) cm^(2)∙V^(-1)∙s^(-1).Combined with the first-principles calculations,our analysis delves into the trends in effective mass and percolation density at low temperatures,shedding light on the impact of quantum effects on band structures and the interplay between structural components and wave *** research offers a comprehensive investigation into the intrinsic mechanisms governing complex multi-strained quantum wells,spanning growth,characterization,and computational perspectives,thereby establishing a strategy for the growth of high-quality strained quantum wells.

关键词： germanium quantum wells RP-CVD multi-strained quantum wells magneto-transport hetero-structure

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：