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16th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2022

作者： Xia, Qing-Jiang Zhang, Ya-Cong You, You Zhou, Fei Lu, Wen-Gao Peking University School of Software and Microelectronics Beijing100091 China Peking University Key Laboratory of Microelectronic Devices and Circuits Ministry of Education School of Integrated Circuits Beijing100871 China

ISBN: (数字)9781665469067

ISBN: (纸本)9781665469067

This paper presents a capacitance-to-digital converter (CDC) for pressure sensor systems, which consists of a front-end circuit and a successive approximation register (SAR) ADC. The front-end circuit uses correlated double sampling technology to eliminate the impact of the low-frequency noise and offset voltage of the operational amplifier. The CDACP and CDACN in the SAR ADC can save power and area as the sampling capacitance of the front-end circuit. The SAR ADC uses bottom plate sampling to avoid various nonlinearities caused by top plate sampling, and a comparator with pre-amplification to reduce the impact of kickback noise. Adjustable reference capacitance (CREF) is designed to expand the detection range of sensor capacitance. The circuit is designed and fabricated in 0.18μm standard CMOS process. While the power supply is 1.8V and the conversion time is 224μs, the power consumption is only 9.1μW. Capacitance resolution of 7.8fF is achieved with sensor capacitance (CSENS) detectable in the range of 10.1pF-21.5pF. © 2022 IEEE.

关键词： Pressure sensors

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Conditional Dynamics in Heterodyne Detection of Superradiant Lasing with Incoherently Pumped Atoms

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Physical Review Letters 2024年第7期133卷 073601-073601页

作者： Huihui Yu Yuan Zhang Qilong Wu Chong-Xin Shan Klaus Mølmer Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material Physics Ministry of Education School of Physics and Microelectronics Institute of Quantum Materials and Physics Niels Bohr Institute

In this Letter, we use quantum trajectory theory to simulate heterodyne detection of narrow bandwidth superradiant lasing from an incoherently excited atomic ensemble. To this end, we describe the system dynamics and account for stochastic measurement backaction by second-order mean-field theory. Our simulations show how heterodyne measurements break the phase symmetry, and initiate the atomic coherence with a random phase and a long temporal phase coherence. More importantly, our theory allows direct simulation of experimental procedures for extraction of spectral information which do not lend themselves to evaluation with the quantum regression theorem.

关键词： Atomic, optical & lattice clocks Measurement back action Superradiance & subradiance Cavity resonators Fabry-Pérot interferometry

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InGaZnO-based photoelectric synaptic devices for neuromorphic computing

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Journal of Semiconductors 2024年第9期45卷 42-47页

作者： Jieru Song Jialin Meng Tianyu Wang Changjin Wan Hao Zhu Qingqing Sun David Wei Zhang Lin Chen School of Microelectronics State Key Laboratory of Integrated Chips and SystemsFudan UniversityShanghai 200433China School of Integrated Circuits Shandong UniversityJinan 250100China National Integrated Circuit Innovation Center Shanghai 201203China School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China Jiashan Fudan Institute Jiashan 314102China

Photoelectric synaptic devices could emulate synaptic behaviors utilizing photoelectric effects and offer promising prospects with their high-speed operation and low crosstalk. In this study, we introduced a novel InGaZnO-based photoelectric memristor. Under both electrical and optical stimulation, the device successfully emulated synaptic characteristics including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), long-term potentiation (LTP), and long-term depression (LTD). Furthermore, we demonstrated the practical application of our synaptic devices through the recognition of handwritten digits. The devices have successfully shown their ability to modulate synaptic weights effectively through light pulse stimulation, resulting in a recognition accuracy of up to 93.4%. The results illustrated the potential of IGZO-based memristors in neuromorphic computing, particularly their ability to simulate synaptic functionalities and contribute to image recognition tasks.

关键词： InGaZnO artificial synapse neuromorphic computing photoelectric memristor

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Investigation of Reliability Characteristics of HfxZr1-xO2-Based FeFET and AFeFET Non-Volatile Memory 17

Investigation of Reliability Characteristics of HfxZr1-xO2-B...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Liao, Min Shao, Xianzhou Chai, Junshuai Sun, Xiaoqing Ke, Xiaoyu Xu, Hao Xiang, Jinjuan Wang, Xiaolei Wang, Wenwu Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Superstring Academy of Memory Technology Beijing100176 China

ISBN: (纸本)9798350361834

In this work, we investigate the performance and reliability of HfxZr1-xO2-based field-effect transistors (FETs) with different gate stacks (FE, AFE, or DE/AFE). By introducing a top Al2O3dielectric layer (DE), we demonstrate enhanced non-volatile memory performance and reliability of Hf0.25Zr0.75O2-based AFeFET. Firstly, we investigate the memory window (MW) dependence on the write pulses. Secondly, we explore the reliability of the FeFET and AFeFET by monitoring the leakage evolution during cycling. The enhanced endurance with AFE is attributed to the suppression of gate degradation during electric field cycling. These findings contribute to understanding the devices with FE or AFE gate stacks. © 2024 IEEE.

关键词： Nonvolatile storage

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Controllable Growth of Conjugated Polymer Monolayer: from Field-Effect Transistors to Integrated circuits

Controllable Growth of Conjugated Polymer Monolayer: from Fi...

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The 2023 International Conference on Display Technology, (ICDT 2023)

作者： Ding, Chenming Lu, Congyan Li, Mengmeng Li, Ling Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

The charge transport of planar organic field-effect transistors (FETs) occurs in the nearest molecular layer to the dielectric layer. Therefore, organic monolayer FETs with two-dimensional transport properties have been widely studied, and is considered to be promising for applications in bottom-up integrated circuits. Based on the semiconducting polymer PffBT4T-2DT, we fabricate the high-performance monolayer FETs and unipolar inverters. Resultant polymer monolayer FETs exhibited excellent and uniform performance with a 107 on/off current ratio and ultra-low leakage current with a magnitude of 10-12 A. More importantly, the corresponding intrinsic gain of 1000 V/V is achieved, which surpass Si MOSFET. Zero-VGS inverters based on these polymer monolayer FETs exhibit steep level transitions with a voltage gain of 70 V/V, which is among the record for inverters based on organic monolayer. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Timing circuits

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Robustness optimization of superlens imaging structures in surface plasmon lithography

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Optics Express 2025年第13期33卷 27056-27070页

作者： Pengyu Ren Huwen Ding Libin Zhang Le Ma Yajuan Su Yayi Wei EDA Center Institute of Microelectronics of the Chinese Academy of Sciences Beijing 100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing 101408 China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences China suyajuan@*** weiyayi@***

Surface plasmon lithography (SPL) overcomes the diffraction limit of conventional projection lithography by utilizing evanescent waves for imaging, offering significant potential for integrated circuit (IC) manufacturing at advanced technology nodes. Previous research on the imaging quality in SPL has primarily focused on enhancing the resolution of imaging structures, neglecting the compatibility with diverse mask patterns. Given the diversity and complexity of patterns in IC layouts, exploring imaging structures compatible with varied mask patterns is essential. This paper focuses on the robustness of superlens imaging structures, introducing the concept of a robust imaging structure. It also establishes a flow for robustness optimization and analyzes imaging quality and compatibility using the coherent transfer function (CTF). This study examines the influences of polymethylmethacrylate (PMMA) and photoresist (Pr) thicknesses on imaging quality, as well as the impact of the top Ag thickness turning point on imaging quality. Simulation experiments and analytical demonstrations reveal that robust imaging structures exhibit higher amplitude and broader high-amplitude bandwidth in the spatial frequencies of evanescent waves, resulting in improved compatibility. This study aims to guide the optimization of imaging structures in practical applications of surface plasmon lithography. The proposed method is suitable for robustness optimization of imaging structures for diverse mask patterns at advanced technology nodes.

关键词： Diffraction limit Image enhancement Image resolution Imaging systems Optical transfer functions Thin films

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Study on the influence of hardmask morphology on substrate profile in plasma etching process 14

Study on the influence of hardmask morphology on substrate p...

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Advanced Etch Technology and Process Integration for Nanopatterning XIV

作者： Lei, Yuzhang Hu, Ziyi Zhai, Yuxuan Shao, Hua Li, Junjie Chen, Rui Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510686441

In plasma etching process, hardmask is an important protective material for substrates, especially for deep silicon etching. The consumption and deformation of hardmask affect the substrate etching profiles, which can severely impact the devices performance. The scaling of devices and more complex structures demand for higher performance of hardmask. However it is difficult and costly to characterize the evolution of hardmask profile during etching. Modeling is an effective manner to overcome this challenge. In this paper, we take the Si etching by SF6/O2 mix gas as the modeling target and conduct theoretic study, using the commercial simulation software named PEGASUS. We explored the effects of different hardmask parameters including thickness, open CD and sidewall angle on substrate etching profile, and characterize the etching rate, sidewall angles, and profile defects such as bowing. This study seeks to provide insight into the correlation, between hardmask morphology and etching profile, and provides theoretical support for the stack structure design and process optimization. © 2025 SPIE.

关键词： Plasma etching

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Influence of Parasitic Capacitance and Resistance on Performance of 6T-SRAM for Advanced CMOS circuits Design

Influence of Parasitic Capacitance and Resistance on Perform...

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2022 China Semiconductor Technology International Conference, CSTIC 2022

作者： Luo, Yanna Yan, Gangping Cao, Lei Huo, Jiali Zhang, Xuexiang Wei, Yanzhao Tian, Guoliang Zhang, Qingzhu Wu, Zhenhua Yin, Huaxiang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the impacts of parasitic capacitance and resistance on the performance of 6T-SRAM are investigated comprehensively by a design-technology co-optimization (DTCO) method and TCAD simulation. It is found that the impact of parasitic capacitance on 6T-SRAM read and write operations is all adverse. However, the influence of parasitic resistance on 6T-SRAM is double-sided and can be used to improve the performance of 6T-SRAM. An optimization strategy of layout and route is proposed for SRAM with high speed, high noise stability or high read and write capabilities. These results provide a useful guidance for the 6T-SRAM layout design toward advanced node CMOS circuits. © 2022 IEEE.

关键词： CMOS integrated circuits

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A Systematic Characterization Method for Time-resolved Stability and Reliability Issues on Lateral GaN Power devices 35

A Systematic Characterization Method for Time-resolved Stabi...

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35th International Symposium on Power Semiconductor devices and ICs, ISPSD 2023

作者： Huang, Yifei Jiang, Qimeng Huang, Sen Liu, Xinyu University of Chinese Academy of Sciences Beijing100049 China Institute of Microelectronics The Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Beijing100029 China

ISBN: (纸本)9798350396829

In this work, three testing modes, including continuous hard switching testing (HSW), high-voltage DC stress testing (DC) and recovery testing (RE), are implemented to characterize time-resolved dynamic RON behaviors of GaN HEMT devices, based on the inductive-load evaluation platform. The proposed stressing pattern (DC-HSW-DC-RE) enables the separation of de-stress- and transient-stress-induced dynamic RON. Based on the stressing pattern, a novel physical-based characterization method is proposed to identify the irreversible degradation of dynamic RON, featuring excellent sensitivity when compared with the traditional methods. In addition, lifetime acceleration experiments are carried out, and the irreversible RON degradation exhibits a strong dependence on voltage and current, but a weak dependence on temperature. © 2023 IEEE.

关键词： Gallium nitride

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Layer-Valley Hall Effect under Inversion and Time-Reversal Symmetries

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Chinese Physics Letters 2024年第6期41卷 88-97页

作者：赵交交刘贵斌陈鹏姚裕贵张广宇杜罗军 Beijing National Laboratory for Condensed Matter Physics and Key Laboratory for Nanoscale Physics and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Centre for Quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)School of PhysicsBeijing Institute of TechnologyBeijing 100081China Beijing Key Lab of Nanophotonics&Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of TechnologyBeijing 100081China Schoolof Microelectronics Southern University of Science and TechnologyShenzhen 518055China Songshan Lake Materials Laboratory Dongguan 523808China

Hall effects have been the central paradigms in modern physics,materials science and practical applications,and have led to many exciting breakthroughs,including the discovery of topological Chern invariants and the revolution of metrological resistance *** date,the Hall effects have mainly focused on a single degree of freedom(Do F),and most of them require the breaking of spatial-inversion and/or time-reversal *** we demonstrate a new type of Hall effect,i.e.,layer-valley Hall effect,based on a combined layer-valley Do F characterized by the product of layer and valley *** layer-valley Hall effect has a quantum origin arising from the layer-valley contrasting Berry curvature,and can occur in nonmagnetic centrosymmetric crystals with both spatial-inversion and time-reversal symmetries,transcending the symmetry constraints of single Do F Hall effect based on the constituent layer or valley ***,the layer-valley Hall effect is highly tunable and shows a W-shaped pattern in response to the out-of-plane electric ***,we discuss the potential detection approaches and material-specific design principles of layer-valley Hall *** results demonstrate novel Hall physics and open up exotic paradigms for new research direction of layer-valleytronics that exploits the quantum nature of the coupled layer-valley DoF.

关键词： quantum Inversion curvature

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