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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Wu Fengfeng Jia Song Xu Heqing Wang Yuan Zhang Dacheng Key Laboratory of Microelectronics Devices and Circuits（MOE） Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

RapidIO is a high-performance standard for embedded *** to different ending alignments of RapidIO packets,the corresponding CRC computations should be *** this paper,two selective parallel computation schemes based on simplified intermediate value equations are *** with the reference designs,the power dissipations can be reduced by more than 30% meanwhile better balances between the speeds and resource consumptions can be achieved.

关键词： achieved speeds consumptions

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Systematical investigation and physical mechanism of HfO2 gate stacks band alignment, VFB shift and Fermi level pinning

Systematical investigation and physical mechanism of HfO2 ga...

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2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012

作者： Wang, X.L. Wang, W.W. Han, K. Zhang, J. Xiang, J.J. Ma, X.L. Yang, H. Chen, D.P. Ye, T.C. Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Microelectronics Department North China University of Technology Beijing 100041 China

ISBN: (纸本)9781457720840

Band alignment of TiN/HfO2/SiO2/Si stack is systematically investigated by X-ray photoelectron spectroscopy. The differences of Si 2p binding energies between SiO2 and Si substrate are experimentally found to decrease with the sequence of SiO2/Si, 4 nm HfO2/SiO2/Si and 2 nm HfO2/SiO2/Si stacks. The p-type Schottky barrier heights at TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack are experimentally estimated to increase with thicker HfO2 thickness. A physical model based on band alignment of TiN/HfO2/SiO2/Si stack is employed to successfully explain these experimental results. The positive VFB shift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are also physically demonstrated by this model and attributed to interface induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces. © 2012 IEEE.

关键词： Silica

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack 12

Investigation of band structure at metal-gate/high-k interfa...

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12th International Workshop on Junction Technology, IWJT 2012

作者： Wang, Xiaolei Wang, Wenwu Han, Kai Yang, Hong Zhang, Jing Ma, Xueli Xiang, Jinjuan Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Microelectronics Department North China University of Technology Beijing100041 China

ISBN: (纸本)9781467312578

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO2/SiO2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation. © 2012 IEEE.

关键词： Hafnium oxides

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Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector

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Chinese Science Bulletin 2012年第34期57卷 4427-4433页

作者： CHEN Bin YANG YinTang XIE XuanRong WANG Ning MA ZhenYang SONG Kun ZHANG XianJun Key Laboratory of Ministy of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China Xi'an Electronic Engineering Research Institute Xi'an 710100China No.771 Institute of Microelectronics Technology Xi'an 710054China

We investigate the temperature dependence of current-voltage and spectral response characteristics of a 4H-SiC metal-semicon-ductor-metal (MSM) ultraviolet photodetector in the temperature range from room temperature to 800 K with two-dimensional (2D) numerical simulator ISE-DESSIS. It is found that the dark current and photocurrent increase with the increasing temperature. For the range of 500-800 K, the dark current increases by nearly a factor 3.5 every 150 K larger than that of photocurrent, leading to a negative effect on photodetector current ratio (PDCR). Nevertheless, the PDCR is still greater than 200 even at 800 K, which exhibits the excellent thermal stability. In addition, the responsivity has an unsymmetrical trend. As temperature rises, it is clear that a remarkable red-shift of 12 nm occurs and overall responsivity is enhanced for longer wavelength. While the short-wave-length response remains relatively independent of temperature. The mechanism of indirect and direct band absorption transition is responsible for temperature-dependent spectrum distribution. These findings provide a significant insight on the design of the MSM detector operated at elevated temperature.

关键词：温度依赖性 4H-SiC 光谱响应特性光检测器半导体金属紫外线数值模拟器

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A multi-region trap characterization method and its reliability application on STI-based high-voltage LDMOSFETs

A multi-region trap characterization method and its reliabil...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Yandong He Ganggang Zhang Xing Zhang Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University Beijing China

The STI-based laterally diffused metal-oxide-semiconductor (LDMOS) devices have become popular with its better tradeoff between breakdown voltage and on-resistance and its compatibility with the standard complementary metal-oxide-semiconductor (CMOS) process. In this paper, a multi-region trap characterization direct current current-voltage (MR-DCIV) technique was proposed to characterize interface state generation in both channel and STI drift regions. The correlation between interface trap and MR-DCIV current has been verified by two-dimensional device simulation. Degradation of STI-based LDMOS transistors in various reliability stress modes is investigated experimentally by proposed technique. The impact of interface state location on device electrical characteristics is analyzed from measurement and simulation. Our study reveals that OFF-state stress becomes the worst degradation mode in term of the on-resistance degradation, which is attributed to interface state generation under STI drift region.

关键词： Stress Interface states Degradation Logic gates Substrates Voltage measurement

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Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV spectroscopy

Insights into Stress-Induced Degradation of STI-based LDMOSF...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Yandong He Lin Han Ganggang Zhang Xing Zhang Congming Qi Wei Su Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits Peking University CSMC Technologies Corporation

ISBN: (纸本)9781467324748

Stress-induced degradation of STI-based LDMOSFETs has been studied by multi-region direct-current current voltage(MR-DCIV)spectroscopy, a new point of view over the traditional CP and Id-Vg characterization *** capability of identifying the interface states in LDMOSFETs has been demonstrated by MR-DCIV *** correlation between device degradation and MR-DCIV spectrum has been verified by 2D device simulation. Experimental results and the degradation mechanism for both ON-and OFF-state stresses have been addressed. The role played by the interface state at channel and STI region in LDMOSFETs has been clearly revealed through MR-DCIV *** term of the on-resistance,the OFF-state stress leads to the worst degradation in an STI-based nLDMOS,which is attributed to the interface state generation under STI region.

关键词： LDMOS STI Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV spectroscopy

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Design of Ku band GaN power HEMT with 3D electromagnetic characterization

Design of Ku band GaN power HEMT with 3D electromagnetic cha...

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2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012

作者： Ge, Qin Liu, Xinyu Chen, Xiaojuan Luo, Weijun Key Laboratory of Microwave Devices and Integrated Circuit Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781467321839

An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling. © 2012 IEEE.

关键词： III-V semiconductors

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Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

Enhanced Nitrogen Plasma Immersion Passivation Method for Hi...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Meng Lin Quanxin Yun Min Li Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

In this paper,an enhanced Ge surface passivation method by nitrogen plasma immersion with adding RIE power is presented and experimentally demonstrated. With the acceleration effect resulting from electric field induced by proper RIE power,more nitrogen plasma will drift to Ge surface to passivate the dangling *** is shown that nitrogen plasma immersion with RIE power is efficient in suppressing Ge suboxide growth during high-K dielectric deposition,reducing interface states and improving the C-V characteristic of both p-MOS and n-MOS capacitors in terms of flat-band voltage and hysteresis.

关键词： MOS RIE Enhanced Nitrogen Plasma Immersion Passivation Method for High-K/Ge Stack Formation

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Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

Investigation on Channel Hot Carrier Degradation of Ultra De...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Liang-Xi Huang Xia An Fei Tan Wei-Kang Wu Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

The bias dependence of Channel Hot Carrier (CHC)degradation in 0.18μm SOI pMOSFETs is investigated in this *** classical bias modes (Vg@Isubmax and Vg=Vd)were applied to analyze the CHC degradation behavior of SOI *** results show that at low Vg,hot carriers injection produced by impact ionization is the main factor contributed to ***,the degradation stressed at high Vg is controlled by both CHC and NBTI effect,showing the NBTI-like behavior at room temperature which indicates that NBTI effect is the dominant factor.A possible mechanism is put forward to explain the enhanced CHC degradation under Vg=Vd compared with pure NBTI *** influence of floating body on the performance degradation of PDSOI devices is also investigated.

关键词： SOI CHC Investigation on Channel Hot Carrier Degradation of Ultra Deep Submicron SOI pMOSFETs

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A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

A Radiation Detection Readout Circuit with Current Feedback ...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiao-Lu Chen Ya-Cong Zhang Wen-Gao Lu Zhong-Jian Chen Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

This paper describes a radiation detection readout circuit for portable dosimeter which is aimed at low power,low noise and high counting rate.A current feedback baseline holder circuit is proposed to solve the baseline shift problem without any other performance *** core circuit has been implemented in 0.35μm CMOS *** achieves 46mV/fC conversion gain,200kcps counting rate and consumes 260μA current from 3.3V *** no detector is connected to the chip,the equivalent input noise charge is 0.094fC rms.

关键词： A Radiation Detection Readout Circuit with Current Feedback Baseline Holder

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