检索结果-内蒙古大学图书馆

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Min Li Meng Lin Quanxin Yun Zhiqiang Li Xia An Ming Li Xing Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

The effect of CHF3 gas flow rate on the trench shape and etch rate was studied for germanium-based device *** this study,a sidewall tilt angle larger than 80°with the trench depth of 300nm was achieved by optimizing the flow rate ratio of SF6/CHF3/He gas ***,based on the experimental results,a Linear Reactive Ion Etching(RIE) Model was proposed to predict the optimized composition of the SF6/CHF3/He gas mixture to obtain steep trenches with low etch rate,which may provide the guideline for the germanium etching process design.

关键词： RIE Reactive Ion Etching of Germanium Using SF6/CHF3/He gas mixture CHF

来源：评论

学校读者我要写书评

暂无评论

Tuneling electrical resitance effect based on the ultrathin ferroelectric polymer films

Tuneling electrical resitance effect based on the ultrathin ...

引用

International Conference on Nanoscience & Technology,China 2013(ChinaNANO 2013)(中国国际纳米科学和技术大会)

作者： Jianlu Wang Xiangjian Meng Chungang Duan Anquan Jiang Jinglan Sun Juhhao Chu Shanghai Institute of technical physics Chinese Academy of Science500 Yutian RoadShanghai200083China Key Laboratory of Polar Materials and DevicesEast China Normal University500 Dongchuang RoadShanghai200241China ASIC & System State Key LaboratoryDepartment of MicroelectronicsFudan UniversityShanghai200433China Shanghai Institute of technical physicsChinese Academy of Science500 Yutian RoadShanghai200083China Key Laboratory of Polar Materials and Devices East China Normal University500 Dongchuang RoadShanghai200241China

The tuneling electrical resitance (TER) effect based on ferroelectric ultrathin films has been studied for several *** key points on the TER effect is the films processing the ferroelectricity when the thickness less ... 详细信息

关键词： Tunneling electrical resistance P(VDF-TrFE) Langmuir-Blodgett

来源：评论

学校读者我要写书评

暂无评论

Multi-spot focusing by using composite spiral zone plates

引用

Chinese Optics Letters 2012年第12期10卷 12-14页

作者：华一磊王子强李海亮高南杜宇禅 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

We present a flexible, simple, and cost effective approach for generating high-quality multiple focal spots in the far field using composite spiral zone plates （SZPs）, which serve as a synthesis of two SZPs with different topological charges. By changing the topological charges of the SZPs can obtain different types of nmltiple focal spots. The numerical solution, fabrication method, and experimental results are presented to prove the capabilities of this approach.

关键词： Optics Physics

来源：评论

学校读者我要写书评

暂无评论

Diamond-like carbon thin films with extremely high compressive stress (>8-12GPa) for advanced CMOS strain engineering

Diamond-like carbon thin films with extremely high compressi...

引用

2012 MRS Spring Meeting

作者： Ma, Xiaolong Yin, Huaxiang Fu, Zuozhen Zhang, Haiqiang Zhang, Xu Yan, Jiang Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China Key Laboratory of Beam Technology and Material Modification Ministry of Education Beijing Normal University 1000875 Beijing China

ISBN: (纸本)9781627482363

Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films' compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films' Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films' sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500°C in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering. © 2012 Materials Research Society.

关键词： Diamond like carbon films

来源：评论

学校读者我要写书评

暂无评论

A Power Clamp Circuit Using Current Mirror for On-chip ESD Protection

A Power Clamp Circuit Using Current Mirror for On-chip ESD P...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Guangyi Lu Yuan Wang Xuelin Zhang Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits(MoE) Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A power clamp circuit using current mirror is proposed in this *** current mirror is used for capacitance multiplication in the proposed circuit. Besides,the proposed circuit has different turn-on and turn-off paths towards clamp transistor and it employs a non-traditional phase inverter in the turn-on path of clamp *** results verify that the proposed circuit has enhanced ability to discharge static charges during an ESD event while making the ESD pulse detection CR time constant notably *** the reduction of CR time constant,the proposed circuit has better immunity to mis-triggering and is less chip area-consuming.

关键词： Electrostatic discharge(ESD),power clamp circuit,current mirror,mis-triggering

来源：评论

学校读者我要写书评

暂无评论

Time Divided Architecture for Closed Loop MEMS Capacitive Accelerometer

Time Divided Architecture for Closed Loop MEMS Capacitive Ac...

引用

2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Jingqing Huang Tingting Zhang Meng Zhao Lichen Hong Yacong Zhang Wengao Lu Zhongjian Chen Yilong Hao Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University

This paper mainly discusses issues concerning the architecture of time divided closed loop accelerometer. For this particular architecture mathematical relationship between the external acceleration detected by sensor and the voltage output of the readout circuits is deduced. Both Matlab/Simulink model and Verilog-A model for such architecture are *** results agree with the mathematical *** circuits designed to work under 50kHz with feedback duty cycle ηbeing 60% are fabricated using 0.35μm HV CMOS *** results show a sensitivity of 1.518V/g.

关键词： Mathematical model Force Integrated circuit modeling Accelerometers Electrostatics MATLAB

来源：评论

学校读者我要写书评

暂无评论

Dislocation induced nonuniform surface morphology of Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN HEMTs

Dislocation induced nonuniform surface morphology of Ti/Al/N...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Xin Kong Ke Wei Guoguo Liu Jianhui Wang Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

In this study, Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN high electron mobility transistors was fabricated and demonstrated distribution of bright and dark areas on the surface. Surface element analyses show that it is of great difference in the Ni and Au content between these two kinds of regions. According to transmission electron microscopy and corresponding Electron dispersive x-ray spectroscopy analyses, plenty of Ni was detected in dislocation rich regions while rare Ni was left in dislocation free regions so that Au tended to accumulate in the form of AlAu x binary alloy. The surface nonuniformity presented on the surface should be attributed to the nonuniform interfacial reactions resulted from the dislocations.

关键词： Aluminum gallium nitride Gallium nitride Surface morphology Nickel Gold Ohmic contacts

来源：评论

学校读者我要写书评

暂无评论

Three-dimensional modeling of AlGaN/GaN HEMT including electro-thermal coupling effects

Three-dimensional modeling of AlGaN/GaN HEMT including elect...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Jianhui Wang Xinhua Wang Lei Pang Xiaojuan Chen Xin Kong Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

Thermal performance of AlGaN/GaN HEMT is a critical issue during the design stage, since it significantly affect the lifetime of the device. This paper introduces a three-dimensional modeling technique including electro-thermal coupling effects for investing the thermal characteristic of the AlGaN/GaN HEMT. The method achieves a good balance between simulation time and accuracy through iterative calculation between the 2D and 3D model.

关键词： Gallium nitride Solid modeling Aluminum gallium nitride HEMTs Temperature measurement Logic gates Silicon carbide

来源：评论

学校读者我要写书评

暂无评论

A wide dynamic range transimpedance amplifier with high gain-bandwidth product for 10 Gb/s optical links

A wide dynamic range transimpedance amplifier with high gain...

引用

International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： Fan Jiang Jianwu Chen Danyu Wu Jin Wu Zhi Jin Xinyu Liu Microwave Devices and Integrated Circuits Department Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

This paper presents the design method and implementation of a wide dynamic range transimpedance amplifier (TIA) with high gain-bandwidth product (GBW) based on 1μm GaAs process of WIN company. The wide dynamic range results from the utilization of a parallel feedback structure that divides the input current when it is large. And the high GBW owes to the limiting amplifier (LA) which functions as a gain stage based on a modified Cherry-Hopper amplifier. The proposed TIA achieves a maximum input current of 3.5 mA and a transimpedance of 68.6 dBΩ and a bandwidth of 10.9 GHz.

关键词： Bandwidth Resistors Dynamic range Noise Limiting Gain Optical receivers

来源：评论

学校读者我要写书评

暂无评论

Low power readout circuit for 384×288 uncooled IRFPA with novel readout stage

Low power readout circuit for 384×288 uncooled IRFPA with n...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Xiangyun Meng Yacong Zhang Sanlin Liu Meng Chen Wengao Lu Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

A readout integrated circuit for 384×288 uncooled infrared focal plane array (IRFPA) is presented in this paper. To overcome the kickback to sample and hold stage with less power consumption, a novel readout stage of a Class AB op-amp with input stage in each column and sharing one cascode output stage is introduced. This IRFPA readout circuit has been designed and fabricated in 0.35um CMOS technology. The readout speed of the circuit can reach 7MHz, the dynamic range is 86.5dB and power consumption is 108mW. A 32×32 experimental chip has been verified by test results.

关键词： Power demand Bolometers Arrays Capacitance Dynamic range Crosstalk Simulation

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：