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High Efficiency Black Silicon Solar Cell with Self-Cleaning Dual-Scale Textured Surface

High Efficiency Black Silicon Solar Cell with Self-Cleaning ...

The 11th International Workshop on Plasma-Based Ion Implantation & Deposition(第11届等离子基离子注入与沉积国际会议)

作者： Jie Liu Bangwu Liu Yang Xia Zenan Shen Chaobo Li Su Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Beijing 100029 China Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou 730000 China Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou 730000 China

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The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

The study on the properties of black multicrystalline silico...

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2011 2nd International Conference on Advances in Energy Engineering(ICAEE)

作者： Sihua Zhong Bangwu Liu Yang Xia Jinhu Liu Jie Liu Zenan Shen Zheng Xu Chaobo Li Institute of Solar Energy in School of Science Beijing Jiaotong University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The black multi-crystalline silicon（mc-Si） has been successfully produced by plasma immersion ion *** microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer,*** show that the black mc-Si exhibits a hillock structure with a low ***,with decreasing the diffusion temperature,the external quantum efficiency of the black mc-Si solar cell increases below 50 nm wavelength due to reduced surface *** optimal conversion effieciency of the black mc-Si solar cell is 15.50%at the diffusion temperature of 825 ℃.Furthermore,it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.

关键词： black silicon diffusion temperature multicrystalline silicon solar cell

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Stripping photo-resist with rf dielectric barrier atmospheric pressure plasma

Stripping photo-resist with rf dielectric barrier atmospheri...

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2011年第三届微电子及等离子体技术国际会议

作者： Han Chuanyu Wu Yuanwei Zhao Lingli Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 People''s Republic of China Key Laboratory Microelectronic Devices and Integration TechnologyInstitute of Microelectronics Chinese Academy of Sciences

novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist (PR).

关键词： photo-resist stripping atmospheric pressure plasma OH radical emission spectra

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A novel method for sacrificial layer release in MEMS devices fabrication

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Chinese Physics B 2010年第7期19卷 460-466页

作者：石莎莉陈大鹏景玉鹏欧毅叶甜春徐秋霞 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

During the forming process of the free-standing structure or the functional cavity when releasing the high aspect ratio sacrificial layer, such structures tend to stick to the substrate due to capillary force. This paper describes the application of pull-in length conception as design rules to a novel ＇dimpled＇ method in releasing sacrificial layer. Based on the conception of pull-in length in adhering Phenomenon, the fabrication and releasing sacrificial layer methods using micro bumps based on the silicon substrate were presented. According to the thermal isolation performances of one kind of micro electromechanical system device thermal shear stress sensor, the sacrificial layers were validated to be successfully released.

关键词： sacrificial layer adhering pull in length bump

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A novel anti-shock silicon etching apparatus for solving diaphragm release problems

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Chinese Physics B 2010年第6期19卷 195-199页

作者：石莎莉陈大鹏欧毅景玉鹏徐秋霞叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

This paper presents a novel anti-shock bulk silicon etching apparatus for solving a universal problem which occurs when releasing the diaphragm （e.g. SiNx）, that the diaphragm tends to be probably cracked by the impact of heatinginduced bubbles, the swirling of heating-induced etchant, dithering of the hand and imbalanced etchant pressure during the wafer being taken out. Through finite element methods, the causes of the diaphragm cracking are analysed. The impact of heating-induced bubbles could be the main factor which results in the failure stress of the SiNx diaphragm and the rupture of it. In order to reduce the four potential effects on the cracking of the released diaphragm, an anti-shock hulk silicon etching apparatus is proposed for using during the last etching process of the diaphragm release. That is, the silicon wafer is first put into the regular constant temperature etching apparatus or ultrasonic plus, and when the residual bulk silicon to be etched reaches near the interface of the silicon and SiNx diaphragm, within a distance of 50-80μm （the exact value is determined by the thickness, surface area and intensity of the released diaphragm）, the wafer is taken out carefully and put into the said anti-shock silicon etching apparatus. The wafer＇s position is at the geometrical centre, also the centre of gravity of the etching vessel. An etchant outlet is built at the bottom. The wafer is etched continuously, and at the same time the etchant flows out of the vessel. Optionally, two symmetrically placed low-power heating resistors are put in the anti-shock silicon etching apparatus to quicken the etching process. The heating resistors＇ power should be low enough to avoid the swirling of the heating-induced etchant and the impact of the heating-induced bubbles on the released diaphragm. According to the experimental results, the released SiNx diaphragm thus treated is unbroken, which proves the practicality of the said anti-shock bulk silicon etching appar

关键词： anti-shock bulk silicon etching apparatus releasing diaphragm finite element analysis

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Low swing drivers based on charge redistribution

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Science China(Information Sciences) 2010年第11期53卷 2377-2388页

作者： WU FengFeng, JIA Song, WANG Yuan & ZHANG GangGang key laboratory of microelectronics devices and circuits (MOE), Department of microelectronics, Peking University, Beijing 100871, China Key Laboratory of Microelectronics Devices and Circuits (MOE) Department of Microelectronics Peking University Beijing China

Low power on-chip interconnect technique is important for deep submicron SOC design. In this paper, a novel low swing drivers scheme based on charge redistribution is proposed. Significant reduction in power dissipation is achieved by dividing the full signal swing into several lower ones. The proposed circuits are especially suitable for driving multi-branch transmission wires by utilizing higher efficiency of charges. Compared with the reference design, the new scheme can reduce power dissipation by more than 66% as shown by HSPICE simulation while driving three branches. The proposed circuits have been fabricated and its effectiveness has been verified by measurement results.

关键词： low swing charge redistribution low power design

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Design and test results of a low-noise readout integrated circuit for high-energy particle detectors

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Nuclear Science and Techniques 2010年第1期21卷 44-48页

作者： ZHANG Mingming CHEN Zhongjian ZHANG Yacong LU Wengao JI Lijiu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

A low-noise readout integrated circuit for high-energy particle detector is *** noise of charge sensitive amplifier was suppressed by using single-side amplifier and resistors as source ***-time semi-Gaussian filter is chosen to avoid switch *** peaking time of pulse shaper and the gain can be programmed to satisfy *** readout integrated circuit has been designed and fabricated using a 0.35 μm double-poly triple-metal CMOS *** results show the functions of the readout integrated circuit are *** equivalent noise charge with no detector connected is 500–700 e in the typical mode,the gain is tunable within 13–130 mV/fC and the peaking time varies from 0.7 to 1.6 μs,in which the average gain is about 20.5 mV/fC,and the linearity reaches 99.2%.

关键词：读出集成电路高能粒子探测器低噪声设计测试 CMOS工艺峰值时间单端放大器

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A novel low-swing transceiver for interconnection between NoC routers

A novel low-swing transceiver for interconnection between No...

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International Conference on Digital Content, Multimedia Technology and its Applications (IDC)

作者： Yi Liu Gang Liu Yintang Yang Zijin Li Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Xi'an China Institute of Microelectronics Xidian University Xi'an China

For interconnect between NoC (Network-on-Chip) routers, power consumption is high and data rates are limited when conventional transceivers are used. In this paper, a novel high-speed and low-power source-synchronous transceiver is proposed. An improved low-swing FIR (Finite Impulse Response) filter with resistive pre-emphasis in combination with a double-tail sense amplifier enables a achievable data-rate of 9Gb/s over a 2mm twisted differential interconnect, while consuming only 181fJ/b. By transmitting the clock signals with reduced swing, power consumption of the source-synchronous clock is reduced by 66%.

关键词： Finite impulse response filter Wires Transmitters Integrated circuit interconnections Delay Transceivers Clocks

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Valence band variation in Si(110) nanowire induced by a covered insulator

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Chinese Physics B 2010年第1期19卷 398-402页

作者：许洪华刘晓彦何毓辉樊春杜刚孙爱东韩汝琦康晋锋 Institute of Microelectronics Peking University & Key Laboratory of Microelectronic Devices and CircuitsMinistry of Education Computer Center of Peking University

In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si （110） nanowire via the simulation of strain distribution and the calculation of a generalized 6 × 6k .p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO2 insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO2 insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO2 insulator, the strain of the HfO2 gate insulator in Si （110） nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO2 insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design.

关键词： silicon nanowire valence band thermal residual strain

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Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching

Oxide-based RRAM: Unified microscopic principle for both uni...

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International Electron devices Meeting (IEDM)

作者： B. Gao J. F. Kang Y. S. Chen F. F. Zhang B. Chen P. Huang L. F. Liu X. Y. Liu Y. Y. Wang X. A. Tran Z. R. Wang H. Y. Yu Albert Chin Institute of Microelectronics Key Laboratory of Microelectronic Devices and Circuits Ministry of Education Peking University Beijing China School of EEE Nanyang Technological University Singapore Singapore Department of Electronics Engineering National Chiao-Tung University Hsinchu Taiwan

A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.

关键词： Switches Voltage measurement Resistance Mathematical model Microscopy Hafnium oxide

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