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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： Ziyi Hu Lado Filipovic Junjie Li Lingfei Wang Zhicheng Wu Rui Chen Yayi Wei Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an inner-spacer. Non-uniformity of substrate surface during wet or dry selective etching of SiGe is a common sight in industry, which cannot be modeled using standard process Technology Computer Aided Design (TCAD) approaches. In this paper, we propose a method for the continuous simulation of the two-step dry etching process - anisotropic etching of the Si/SiGe stack and subsequent isotropic selective etching of SiGe - to study the mechanism behind the non-uniform profile formation. The proposed method is able to simulate the non-uniform profile accurately, which was calibrated and verified with experimental data.

关键词： Industries Fabrication Design automation Dry etching Field effect transistors Logic gates Semiconductor process modeling Substrates Standards Silicon germanium

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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

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Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

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Simulation of phase modulation using optical metalens for optical coherence tomography 14

Simulation of phase modulation using optical metalens for op...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Wang, Yiming Fan, Fan Ding, Xueqing Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) has wide applications in diagnosing diseases, benefitting from its non-invasive, high-resolution, and real-time visualization of tissue microstructures. Still, this technology faces the mutual constraint between transverse resolution and depth of focus. Metalens can modulate the light fields at subwavelength scales, effectively enhancing the depth of focus of an OCT system. In this paper, a metalens designed for the OCT system is proposed. The metalens with different structures can generate various phase modulation outcomes. Using the finite-difference time-domain (FDTD) simulation, the impacts of the nanopillar parameters (e.g. height, diameter, and spacing) and the materials (e.g. Si, SiO2, and TiO2) on phase modulation have been analyzed. Based on the simulation results, the phase modulation capability of nanopillars is compromised at reduced heights, while excessively tall structures can adversely decrease transmittance. With a constant height, the radius of the nanopillars can be manipulated to achieve a phase delay of 2π. Furthermore, the propagation efficiency and the typical depth of focus were calculated from the results of the beam intensity distribution, indicating an enhanced imaging performance of the OCT system. The results provide a basis for designing the metalens used in the OCT systems. © 2024 SPIE.

关键词： Titanium dioxide

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Optical coherence tomography with enhanced depth of focus using metalens 14

Optical coherence tomography with enhanced depth of focus us...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Ding, Xueqing Fan, Fan Wang, Yiming Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) is widely used in ophthalmology and has been a standard method for diagnosing ocular diseases. Improving spatial resolution is crucial for the visualization of ocular microstructure. In conventional OCT systems, enhanced transverse resolution typically results in a reduction of depth of field (DOF). In our study, we designed four metalenses with different microstructures and then integrated them into the sample arm of an OCT imaging system. The metalens can modulate the amplitude and the phase of incident light in the sample. In this way, the depth of focus in the OCT system can be effectively enhanced while maintaining the transverse resolution. Also, the impact of different parameters, such as the size and the spacing of micro-units, has been discussed for OCT imaging. Finally, the experiment on the glass slides has been conducted to validate the performance of OCT imaging. The results demonstrate that the metalens with a specific microstructure could effectively enhance the DOF of OCT imaging. Furthermore, the enhanced depth of focus of the OCT system opens up new opportunities for investigating tissue morphology and function. © 2024 SPIE.

关键词： Optical coherence tomography

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BE...

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2024 IEEE International Symposium on circuits and Systems, ISCAS 2024

作者： Su, Zexin Li, Bo Liu, Chang Su, Xiaohui Luo, Qian Ren, Hongyu Han, Zhengsheng Institute of Microelectronics of The Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Science And Technology On Silicon Devices Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350330991

In this paper, a novel static random-access memory (SRAM) based physical unclonable function (PUF) with ultra-low native bit error rate (BER) is proposed. In the conventional 6T SRAM PUF, the thermal noise weakens the effect of the inherent mismatch on the PUF cell output at the initial power-on transition time, resulting in a high native BER. To realize a low native BER, a 7T PUF with noise immunity is proposed. Through inserting a mono-stable state before the bistable state, the 7T cell avoids the noise impact during the power-on transition period and amplify the mismatch voltage, resulting a huge native BER reduction. Two custom SRAM PUFs adopting 6T cell and 7T cell respectively, were fabricated in 55nm CMOS process to evaluate BER characteristics. The experimental results show that the native BER of the proposed 7T SRAM PUF is only 0.58%, which is nearly 11X lower than the 6T PUF of 6.12%. And as temperature varying from -25°C to 75°C, the worst BER of 7T PUF is 2.31% and is around 5X lower than the 6T PUF of 11.9%. In addition, raw bits generated from the proposed 7T PUF also passed the National institute of Standards and Technology (NIST) randomness tests. © 2024 IEEE.

关键词： Bit error rate

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The Influence of Writing Pulse on Memory Window of FE-FinFET

The Influence of Writing Pulse on Memory Window of FE-FinFET

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China Semiconductor Technology International Conference (CSTIC)

作者： Siyuan Liu Jiahao Yao Ziming Xu Zhaohao Zhang Gaobo Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

In this work, we research the storage characteristics of ferroelectric transistors by experiments and simulations. Firstly, the FE-FinFET (fin field-effect transistor) with 9nm-HZO ferroelectric dielectric layer is used to research the influence of the amplitude and width of writing pulse on the storage characteristics, and we have a simple analysis. In addition, we simulate the experimental process with technology computer aided design (TCAD) models and obtain the same results.

关键词： Integrated circuits Design automation Computational modeling Ferroelectric devices Writing Dielectrics Transistors Transient analysis

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Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications 17

Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Guo, Xinyi Feng, Yang Liu, Jing Zhang, Junyu Zhan, Xuepeng Wu, Jixuan Chen, Jiezhi School of Information Science and Engineering Shandong University Qingdao China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China Neumem Co. Ltd Hefei China

ISBN: (纸本)9798350361834

Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities. By adopting the channel-hot-electron injection (CHEI) and hot-hole injection (HHI) as PE schemes, as large as ∼ 5 V memory window (MW) can be realized and the endurance can reach ∼ 10 6 PE cycles. As for 1-bit operation with sub-1V MW, the speed can be as fast as ∼ 10ns and the endurance is over 109 PE cycles. Moreover, with the incremental-step-pulse-program (ISPP) method, 64 states (6-bit/cell) with high linearity and robust stabilities could be obtained. Our results demonstrate that there is a large flexibility to optimize flash cells as SCM, especially for the read-intensive applications and energy-efficient computing-in-memory (CiM) architectures. © 2024 IEEE.

关键词： Flash memory

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Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes

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Science China(Information Sciences) 2023年第12期66卷 295-296页

作者： Haoran YU Tiancheng GONG Peng YUAN Yuan WANG Zhaomeng GAO Xiaoxin XU Ying SUN Ran CHENG Jianfeng GAO Junfeng LI Bing CHEN Qing LUO Key Laboratory of Microelectronics Devices and Integration Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Micro-Nano Electronics Zhejiang University

Doped HfO2, as an emerging ferroelectric material, could overcome the shortcomings of traditional ferroelectrics [1].Hf0.5Zr0.5O2（HZO） is a good choice for Hf-doped materials because of its excellent ferroelectric properties and mature preparation process. In our previous studies, we proposed a new HZO switchable ferroelectric diode（FE diode） with several advantages, such as high operating speed,

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Impact of X-ray Irradiation on Transfer Characteristics of Fin-FeFET devices

Impact of X-ray Irradiation on Transfer Characteristics of F...

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China Semiconductor Technology International Conference (CSTIC)

作者： Jiahao Yao Ziming Xu Siyuan Liu Gaobo Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

This study investigates the write and erase characteristics of ferroelectric field-effect transistors (FeFETs) under different voltage conditions, as well as their electrical performance changes in irradiated environments. Through ±4V DC scanning and ±4V, 100 ns pulse operations, we observed a significant clockwise hysteresis in the device's transfer characteristics, with threshold voltage shifts representing the memory window of the FeFET. In the X-ray total ionizing dose irradiation tests, we analyzed the impact of irradiation on the electrical characteristics and storage properties of HZO-based FeFETs, revealing phenomena such as leftward drift of the transfer characteristic curves and reduction of the memory window. By integrating the radiation damage mechanisms of HZO films, we examined the influence of fixed trap charge generation on polarization strength and threshold voltage. The results indicate a significant degradation of electric field distribution and polarization characteristics in the HZO film after irradiation, affecting the device's memory capacity.

关键词： Performance evaluation Radiation effects Ferroelectric films Films Threshold voltage Stability analysis Transistors Total ionizing dose Electric fields FeFETs

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