检索结果-内蒙古大学图书馆

IEEE Conference on Electron devices and Solid-State circuits

作者： Zhao Zhihui Wang Yuan Zhao Junlei Yang Hailing Jia Song Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

This work presents a low-power low-cost CDR design for RapidIO SerDes. The design is based on phase interpolator, which is controlled by a synthesized standard cell digital block. Half-rate architecture is adopted to lessen the problems in routing high speed clocks and reduce power. An improved half rate bang-bang phase detector is presented to assure the stability of the system. Moreover, the paper proposes a simplified control scheme for the phase interpolator to further reduce power and cost. The CDR takes an area of less than 0.05 m m 2 , and post simulation shows that the CDR has a RMS jitter of UI pp /32 (11.4 ps @3.125GBaud) and consumes 9.5 mW at 3.125 GBaud.

关键词： Bandwidth Clocks Jitter

来源：评论

学校读者我要写书评

暂无评论

Cascade 2–2 sigma-delta modulators for wideband high-resolution applications

Cascade 2–2 sigma-delta modulators for wideband high-resolu...

引用

Asia Pacific Conference on Postgraduate Research in microelectronics & Electronics (PrimeAsia)

作者： Hongyi Li Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, several techniques which relax circuit requirements of building blocks are presented to effectively realize wideband high-resolution cascade sigma-delta modulator. Three cascade structures have been proposed in this paper. First, a MASH 2-2 with feed-forward topology in both stages has been explained to obtain low-distortion property and remove subtraction Second, a flexible SMASH 2-2 has been proposed to choose appropriate coefficients for different requirements. Third, a SMASH 2-2 with feed-forward quantization noise self-coupled structure has been displayed to cancel quantization error of the preceding stage totally. Detailed simulation results and comparisons demonstrate the performance of these topologies.

关键词： Multi-stage noise shaping Modulation Quantization Topology Noise Digital filters Bandwidth

来源：评论

学校读者我要写书评

暂无评论

Study of LDMOS-SCR: A High Voltage ESD Protection Device

Study of LDMOS-SCR: A High Voltage ESD Protection Device

引用

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Peng Zhang Yuan Wang Song Jia Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

A novel LDMOS-SCR device for electrostatic discharge protection of power device is presented. The device is able to be fabricated in SOI 40V LDMOS process without any extra mask. Due to the new structure, a proper and... 详细信息

ISBN: (纸本)9781424457977

关键词： electrostatic discharge protection triggering voltage HEAT DISSIPATION High Voltage energy component LDMOS

来源：评论

学校读者我要写书评

暂无评论

Predictive Modeling of Capacitance and Resistance in Gate-all-around Cylindrical Nanowire MOSFETs for Parasitic Design Optimization

Predictive Modeling of Capacitance and Resistance in Gate-al...

引用

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Qiumin Xu Jibin Zou Jieyin Luo Runsheng Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781424457977

This paper presents a predictive electrostatic capacitance and resistance compact model of multiple gate MOSFET with cylindrical conducting channels, taking into account parasitic effects, quantum confinement and quasi-ballistic effects. The model incorporates the dependence of channel length, gate height and width, gate-to-contact spacing, nanowire size, multiple channels, as well as 1-D ultra-narrow source/drain extension (SDE) doping profile. The proposed non-iterative electrostatic model is successfully verified, and can be used to predict nanowire-based circuit performance. Based on the analytical model, we can further examine which parasitic components are affecting the delay. Results revealed that Qside. Cof, Rsd RQ are dominant factors and should be treated as a major design concern. Among all the parameters, Lsd Tg and Ndop are essentially important in parasitic design optimization. By selectively modifying these parameters, parasitic effect is evidently reduced.

关键词： Quantum capacitance Logic gates Delay Resistance Solid modeling Analytical models

来源：评论

学校读者我要写书评

暂无评论

Impacts of Diameter-Dependent Annealing on S/D Extension Random Dopant Fluctuations in Silicon Nanowire MOSFETs

Impacts of Diameter-Dependent Annealing on S/D Extension Ran...

引用

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Tao Yu Runsheng Wang Wei Ding Ru Huang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China

ISBN: (纸本)9781424457977

In this paper, the impacts of diameter-dependent annealing (DDA) effect on nanowire S/D extension random dopant fluctuations (SDE-RDF) in silicon nanowire MOSFETs (SNWTs) are investigated, in terms of electrostatic properties, source/drain series resistance (RSD), and driving current. The SDE-RDF induced variations of threshold voltage (Vth) and DIBL in SNWTs with different diameters are found to be modest and decrease as the diameters down-scale. However, SDE-RDF induced RSd variation in SNWTs is enhanced by abnormal DDA effects, which aggravates the drive current variations with the downscaling of SNWT diameter. The results also show that Vth is the dominant factor in ON/OFF current ratio variation while RSd dominates that of ON current. The tradeoff between RSd and Vth dominant current variations is discussed to give some guidelines for SDE-RDF-aware design in SNWTs.

关键词： Nanowire Diameter drive current digital differential analyzers bis(p-chlorophenyl)acetic acid annealing Silicon VOLTAGE Random

来源：评论

学校读者我要写书评

暂无评论

Dummy Poly Silicon Gate Removal by Wet Chemical Etching

引用

ECS Transactions 2011年第1期34卷

作者： Tao Young Huaxiang Yin Qiuxia Xu Chao Zhao Jun Feng Li Dapeng Chen Key Laboratory of Microelectronics Devices & Integrated Technology Chinese Academy of Sciences No.3 Bei-Tu-Cheng West Road Beijing Beijing 100029 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing Beijing 100029 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Institute of Microelectronics Chinese Academy of Sciences

For the gate last integration scheme, dummy poly silicon gate removal is one of the indispensable processes either for a high-k first or a high-k last route. In this paper, experimental results of dummy poly silicon gate removal using TetraMethyl Ammonium Hydroxide (TMAH) chemical etching are presented. The preliminary results show that the poly silicon removal rate was highly sensitive to the wet etch conditions. By optimizing the wet etch conditions, high selectivity of poly silicon with respect to SiO2, Si3N4 and hafnium silicon oxynitride (HfSiON) was obtained. A gate trench of critical dimension (CD) of about 70 nm without poly silicon residue was fabricated using optimized conditions. The excellent etch capability of the optimized wet etch process was also demonstrated by controlling trench profiles.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Pulse Voltage Dependent Resistive Switching Behaviors of HfO2-Based RRAM

Pulse Voltage Dependent Resistive Switching Behaviors of HfO...

引用

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Bin Gao Bing Chen Yuansha Chen Lifeng Liu Xiaoyan Liu Ruqi Han Jinfeng Kang Institute of Microelectronics Peking University & Key Laboratory of Microelectronic Devices and Circuits Ministry of Education Beijing 100871 China

Voltage pulse dependent resistive switching behavior during SET process in HfO2-based RRAM device is investigated. When a resistor is connected in series to RRAM during the SET process, the resistance uniformity can be improved. Voltage pulse controlled resistance states were observed. This behavior may provide the new application with the new function circuits.

关键词： Resistance Voltage control Switches Resistors Tin Process control

来源：评论

学校读者我要写书评

暂无评论

Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

Influence of boundary force on the performance of gate-all-a...

引用

IEEE International Nanoelectronics Conference (INEC)

作者： Honghua Xu Xiaoyan Liu Gang Du Yuhui He Chun Fan Ruqi Han Jinfeng Kang Institute of Microelectronics Key Laboratory of Microelectronic Devices and Circuits Ministry of Education Peking University Beijing China Institute of Microelectronics Peking University Beijing China Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Computer Center Peking University Beijing China

ISBN: (纸本)9781424435432;9781424435449

We calculate valence band structures and transport property of HfO 2 gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states' peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases with higher force values.

关键词： FETs Hafnium oxide Dielectrics and electrical insulation Capacitive sensors Effective mass Nanoscale devices Electrodes Lattices Voltage High-K gate dielectrics

来源：评论

学校读者我要写书评

暂无评论

Design consideration of multi-band RF CMOS filter based on active inductors

Design consideration of multi-band RF CMOS filter based on a...

引用

2010 Academic Symposium on Optoelectronics and microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010

作者： Gao, Zhiqiang Xu, Honglin Zhang, Zhongzhao Lan, Jinbao Microelectronics Center of HIT Harbin Institute of Technology Harbin City 150080 China Harbin Institute of Technology School of Electronics and Information Engineering Harbin City 150080 China National Key Laboratory of Analog Integrated Circuits Sichuan Institute of Solid State Circuits Chongqing City 40060 China

ISBN: (纸本)9781424455133

In this paper, topology of gyrator-C active inductors are briefly reviewed. A novel structure of multi-band RF active inductor using transistors is presented. Issues of the active inductor related to stability, Q-enhancement principle, and noise are considered. The design of the multi-band Q-enhancement RF filter with 0.18um CMOS process is achieved based on the active inductors. Simulated results show the filter centered at 2.48GHz with about 84MHz bandwidth (3-dB) is tunable in frequency from about 2.19GHz to 4.14GHz, and it exhibits -6.1dBm input third-order intercept point at 2.48GHz with about 80MHz bandwidth while the DC power consumes only 3.9mW. © 2010 IEEE.

关键词： Bandwidth

来源：评论

学校读者我要写书评

暂无评论

"Spontaneous electrolysis" and simultaneously assembly hierarchy nanostructures of copper tetracyanoquinodimethane

"Spontaneous electrolysis" and simultaneously assembly hiera...

引用

作者： Ji, Zhuoyu Li, Hongxiang Liu, Yaling Hu, Wenping Liu, Ming Beijing National Laboratory of Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100080 China Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

A simple method was developed to generate nanolamellas of CuTCNQ based on the principle of "spontaneous electrolysis". The nanolamellas were identified to belong to phase I of CuTCNQ. Intermediate products before nanolamellas were monitored with this method and beautiful artificial flowers were assembled based on the "spontaneous electrolysis." Moreover, CuTCNQ nanocrystal arrays could be grown on TCNQ single crystal surface homogeneously, which suggested a new method to assembly nanomaterials on crystal surface. Copyright © 2010 American Scientific Publishers All. rights reserved.

关键词： Self assembly

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：