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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： Ziyi Hu Lado Filipovic Junjie Li Lingfei Wang Zhicheng Wu Rui Chen Yayi Wei Ling Li State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing China CDL for Multi-Scale Process Modeling of Semiconductor Devices and Sensors Institute for Microelectronics TU Wien Vienna Austria

ISBN: (数字)9798331516352

ISBN: (纸本)9798331516369

Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an inner-spacer. Non-uniformity of substrate surface during wet or dry selective etching of SiGe is a common sight in industry, which cannot be modeled using standard process Technology Computer Aided Design (TCAD) approaches. In this paper, we propose a method for the continuous simulation of the two-step dry etching process - anisotropic etching of the Si/SiGe stack and subsequent isotropic selective etching of SiGe - to study the mechanism behind the non-uniform profile formation. The proposed method is able to simulate the non-uniform profile accurately, which was calibrated and verified with experimental data.

关键词： Industries Fabrication Design automation Dry etching Field effect transistors Logic gates Semiconductor process modeling Substrates Standards Silicon germanium

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A Novel Multiple Modes Resonant Sensor Featuring Blue Sideband Excitation 38

A Novel Multiple Modes Resonant Sensor Featuring Blue Sideba...

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38th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2025

作者： Xu, Jiao Zheng, Zhuoyue Xi, Jingqian Zhang, Ziqian Liu, Huafeng Zhang, Pan Chen, Jianlin Wang, Chen Kraft, Michael Wang, Yuan Martins, R.P. Mak, Pui-In Huazhong University of Science and Technology Moe Key Laboratory of Fundamental Physical Quantities Measurement Pgmf School of Physics Wuhan430074 China University of Macau Institute of Microelectronics State Key Laboratory of Analog and Mixed-Signal Vlsi 999078 China Peking University National Key Laboratory of Advanced Micro and Nano Manufacture Technology School of Integrated Circuits 100871 China Shanghai University School of Microelectronics 200444 China Ku Leuven Department of Electrical Engineering-MNS Leuven3000 Belgium

ISBN: (纸本)9798331508890

This paper reports a novel MEMS resonant structure functioning as a baseline resonant electrostatic force/temperature sensor, highlighting its substantial potential in sensing applications. The resonator, characterized by a dual-cosine structure, is capable of simultaneous multiple resonant modes actuation within the 300 kHz range, through a sole-source drive approach using the recent emerging Blue Sideband Excitation (BSE) technique. This method enables a distinctive multi-modal response, essential for multi-parameter measurements. The research focuses on the sensor's temperature characteristics, electrostatic perturbation sensitivity, and noise floor. Notably, the study reveals intriguing temperature responses across different modes, where certain modes exhibit a significant frequency rise with increasing temperature, this is counter-intuitive with common MEMS resonator devices, prompting further investigation into the underlying mechanisms. The analysis of electrostatic perturbation sensitivity and noise background further unfolds the resonator's performance under various excitation conditions, laying a foundation for advancing sensor functionality, and providing solid evidence on the viability of the subject. To sum up, this study highlights the resonator's potential as a high-precision sensor, opening new opportunities for MEMS sensor design and multi-parameter measurement applications. © 2025 IEEE.

关键词： Microchannels

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Long-term and short-term plasticity independently mimicked in highly reliable Ru-doped Ge_(2)Sb_(2)Te_(5) electronic synapses

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InfoMat 2024年第8期6卷 85-96页

作者： Qiang Wang Yachuan Wang Yankun Wang Luyue Jiang Jinyan Zhao Zhitang Song Jinshun Bi Libo Zhao Zhuangde Jiang Jutta Schwarzkopf Shengli Wu Bin Zhang Wei Ren Sannian Song Gang Niu State Key Laboratory for Manufacturing Systems Engineering Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China School of Integrated Circuits Peking UniversityBeijingthe People's Republic of China Beijing Microelectronics Technology Institute Beijingthe People's Republic of China National Key Laboratory of Human-Machine Hybrid Augmented Intelligence National Engineering Research Center for Visual information and Applicationsand School of SoftwareXi'an Jiaotong UniversityXi'anthe People's Republic of China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaithe People's Republic of China Key Laboratory of Microelectronics Device and Integrated Technology The Institute of Microelectronics of Chinese Academy of SciencesBeijingthe People's Republic of China University of Chinese Academy of Sciences Beijingthe People's Republic of China The State Key Laboratory for Manufacturing Systems Engineering&The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China Leibniz-Institut für Kristallzüchtung Max-Born-Straße 2BerlinGermany Key Laboratory of Physical Electronics and Devices Ministry of EducationSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'anthe People's Republic of China The International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology Xi'an Jiaotong UniversityXi'anthe People's Republic of China

In order to fulfill the complex cognitive behaviors in neuromorphic systems with reduced peripheral circuits,the reliable electronic synapses mimicked by single device that achieves diverse long-term and short-term plasticity are *** change random access memory(PCRAM)is of great potential for artificial synapses,which faces,however,difficulty to realize short-term plasticity due to the long-lasting resistance *** work reports the ruthenium-doped Ge_(2)Sb_(2)Te_(5)(RuGST)based PCRAM,demonstrating a series of synaptic behaviors of short-term potentiation,pair-pulse facilitation,longterm depression,and short-term plasticity in the same single *** optimized RuGST electronic synapse with the high transformation temperature of hexagonal phase>380C,the outstanding endurance>108 cycles,the low resistance drift factor of 0.092,as well as the extremely high linearity with correlation coefficients of 0.999 and 0.976 in parts of potentiation and *** investigations also go insight to mechanisms of Ru doping according to thorough microstructure characterization,revealing that Ru dopant is able to enter GST lattices thus changing and stabilizing atomic arrangement of *** leads to the short-term plasticity realized by RuGST ***,the proposed RuGST electronic synapses performs a high accuracy of94.1%in a task of image recognition of CIFAR-100 database using ResNet *** work promotes the development of PCRAM platforms for large-scale neuromorphic systems.

关键词： electronic synapses neuromorphic computing PCRAM Ru-doped Ge_(2)Sb_(2)Te_(5)

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The Influence of Writing Pulse on Memory Window of FE-FinFET

The Influence of Writing Pulse on Memory Window of FE-FinFET

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China Semiconductor Technology International Conference (CSTIC)

作者： Siyuan Liu Jiahao Yao Ziming Xu Zhaohao Zhang Gaobo Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

In this work, we research the storage characteristics of ferroelectric transistors by experiments and simulations. Firstly, the FE-FinFET (fin field-effect transistor) with 9nm-HZO ferroelectric dielectric layer is used to research the influence of the amplitude and width of writing pulse on the storage characteristics, and we have a simple analysis. In addition, we simulate the experimental process with technology computer aided design (TCAD) models and obtain the same results.

关键词： Integrated circuits Design automation Computational modeling Ferroelectric devices Writing Dielectrics Transistors Transient analysis

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Impact of X-ray Irradiation on Transfer Characteristics of Fin-FeFET devices

Impact of X-ray Irradiation on Transfer Characteristics of F...

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China Semiconductor Technology International Conference (CSTIC)

作者： Jiahao Yao Ziming Xu Siyuan Liu Gaobo Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

This study investigates the write and erase characteristics of ferroelectric field-effect transistors (FeFETs) under different voltage conditions, as well as their electrical performance changes in irradiated environments. Through ±4V DC scanning and ±4V, 100 ns pulse operations, we observed a significant clockwise hysteresis in the device's transfer characteristics, with threshold voltage shifts representing the memory window of the FeFET. In the X-ray total ionizing dose irradiation tests, we analyzed the impact of irradiation on the electrical characteristics and storage properties of HZO-based FeFETs, revealing phenomena such as leftward drift of the transfer characteristic curves and reduction of the memory window. By integrating the radiation damage mechanisms of HZO films, we examined the influence of fixed trap charge generation on polarization strength and threshold voltage. The results indicate a significant degradation of electric field distribution and polarization characteristics in the HZO film after irradiation, affecting the device's memory capacity.

关键词： Performance evaluation Radiation effects Ferroelectric films Films Threshold voltage Stability analysis Transistors Total ionizing dose Electric fields FeFETs

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One-dimensional sp carbon:Synthesis,properties,and modifications

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Chinese Physics B 2022年第12期31卷 567-589页

作者： Chao-Fan Lv Xi-Gui Yang Chong-Xin Shan State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China University of Chinese Academy of Sciences Beijing 100049China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Material PhysicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

Carbyne,as the truly one-dimensional carbon allotrope with sp-hybridization,has attracted significant interest in recent years,showing potential applications in next-generation molecular devices due to its ultimate one-atom *** excellent properties of carbyne have been predicted,however,free-standing carbyne sample is extremely unstable and the corresponding experimental researches and modifications are under-developed compared to other known carbon *** synthesis of carbyne has been slowly developed for the past ***,there have been several breakthroughs in in-situ synthesis and measurement of carbyne related materials,as well as the preparation of ultra-long carbon chains toward infinite *** progresses have aroused widespread discussion in the academic *** this review,the latest approaches in the synthesis of sp carbon are *** then discuss its extraordinary properties,including mechanical,electronic,magnetic,and optical properties,especially focusing on the regulations of these ***,we provide a perspective on the development of carbyne.

关键词： carbyne polyyne linear carbon chains

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A Universal Core Surface-Potential Modeling Methodology for Future Heterogeneous AOS/Si Co-integrated Design

A Universal Core Surface-Potential Modeling Methodology for ...

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International Symposium on Next-Generation Electronics (ISNE)

作者： Yue Zhao Jingrui Guo Lihua Xu Shijie Huang Lingfei Wang Ling Li Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China

A universal core surface potential modeling methodology is proposed to obtain the continuous explicit solutions to Poisson equation for future heterogeneous AOS/Si co-integrated design, without the necessity to solve implicit equations by numerical iteration or the table lookup method as previous work. This method is compatible to devices with various structures and different channel materials. In this paper, it has been successfully applied to Bulk MOSFET, SOI MOSFET and IGZO-based MOSFET. The fully analytical solutions of the surface potential will contribute to compact expressions of drain current, terminal charge and capacitance, incorporating physics-based and structural parameters. Thus, such a unified high accuracy and efficiency methodology is suitable for surface potential compact model towards future multi-functional heterogeneous integrated circuit design.

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Optimizing Flash Memory Towards Storage-Class Memory (SCM) Applications 17

Optimizing Flash Memory Towards Storage-Class Memory (SCM) A...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Guo, Xinyi Feng, Yang Liu, Jing Zhang, Junyu Zhan, Xuepeng Wu, Jixuan Chen, Jiezhi School of Information Science and Engineering Shandong University Qingdao China Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices and Integrated Technology Beijing China Neumem Co. Ltd Hefei China

ISBN: (纸本)9798350361834

Aiming at the applications of flash memories as storage-class memory (SCM), we did a comprehensive study on the operation schemes of flash cells for fast Program/Erase (PE) cycling, high endurance and read stabilities. By adopting the channel-hot-electron injection (CHEI) and hot-hole injection (HHI) as PE schemes, as large as ∼ 5 V memory window (MW) can be realized and the endurance can reach ∼ 10 6 PE cycles. As for 1-bit operation with sub-1V MW, the speed can be as fast as ∼ 10ns and the endurance is over 109 PE cycles. Moreover, with the incremental-step-pulse-program (ISPP) method, 64 states (6-bit/cell) with high linearity and robust stabilities could be obtained. Our results demonstrate that there is a large flexibility to optimize flash cells as SCM, especially for the read-intensive applications and energy-efficient computing-in-memory (CiM) architectures. © 2024 IEEE.

关键词： Flash memory

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SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS

SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BE...

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2024 IEEE International Symposium on circuits and Systems, ISCAS 2024

作者： Su, Zexin Li, Bo Liu, Chang Su, Xiaohui Luo, Qian Ren, Hongyu Han, Zhengsheng Institute of Microelectronics of The Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Science And Technology On Silicon Devices Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350330991

In this paper, a novel static random-access memory (SRAM) based physical unclonable function (PUF) with ultra-low native bit error rate (BER) is proposed. In the conventional 6T SRAM PUF, the thermal noise weakens the effect of the inherent mismatch on the PUF cell output at the initial power-on transition time, resulting in a high native BER. To realize a low native BER, a 7T PUF with noise immunity is proposed. Through inserting a mono-stable state before the bistable state, the 7T cell avoids the noise impact during the power-on transition period and amplify the mismatch voltage, resulting a huge native BER reduction. Two custom SRAM PUFs adopting 6T cell and 7T cell respectively, were fabricated in 55nm CMOS process to evaluate BER characteristics. The experimental results show that the native BER of the proposed 7T SRAM PUF is only 0.58%, which is nearly 11X lower than the 6T PUF of 6.12%. And as temperature varying from -25°C to 75°C, the worst BER of 7T PUF is 2.31% and is around 5X lower than the 6T PUF of 11.9%. In addition, raw bits generated from the proposed 7T PUF also passed the National institute of Standards and Technology (NIST) randomness tests. © 2024 IEEE.

关键词： Bit error rate

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Reduction of Specific Contact Resistivity by Employing Pre-Amorphization Implantation and In-Situ Steam Generation Oxidation 17

Reduction of Specific Contact Resistivity by Employing Pre-A...

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17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Liu, Chang Chen, Xu Liu, Jinbiao He, Yanping Xiong, Wenjuan Liu, Weibing Liu, Mingshan Liu, Zhe Dong, Yaoqi Xu, Jeffrey Xu, Jing Luo, Jun Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China Huawei Technologies Company limited Shenzhen518100 China

ISBN: (纸本)9798350361834

Specific contact resistivity ( ρ c ) at the transistor source/drain has become a bottleneck for further improvement of modern Si CMOS. The increase of surface dopant concentration (Ns) and the reduction of Schottky barrier height (SBHs) are considered as one of the most effective approaches to reduce ρ c . In this paper, the combining effect of pre-amorphization implantation (PAI) and in-situ steam generation (ISSG) oxidation on ρ c is studied. The results show that ρ c can be significantly reduced by the germanium (Ge) or arsenic (As) PAI and ISSG oxidation after phosphorus (P) implantation. When the Ge implantation dose is set at 1× 10 15 cm -2 and ISSG is performed, the ρ c achieves a value of 2.82× 10 -8 Ω· cm 2. When the implantation dose of As is 6× 10 14 cm -2 and ISSG is performed, the ρ c reaches 1.65× 10 -8 Ω· cm 2. In comparison with the Ge PAI and ISSG, the segregation of P and As at the interface by As PAI and ISSG processes provide the higher carrier concentrations to reduce ρ c . © 2024 IEEE.

关键词： Amorphization

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