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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第2期29卷 293-297页

作者： Pang, Zegui Zhuang, Yiqi Li, Xiaoming Li, Jun Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Institute of Microelectronics Xidian University Xi'an 710071 China

This paper presents a new power generation structure that can provide DC energy for passive UHF RFID with high sensitivity and high efficiency. The structure is designed with 0.18 μm standard CMOS technology, including two charge pumps, a current reference, and a group of bias circuits. Low-voltage performance is improved thanks to the bias structure, which eliminates the threshold voltage drop and body-effect of conventional circuits. A 350 mV minimum input level is required to generate a 1.5 V power supply for a 100 kΩ load with power conversion efficiency (PCE) of 22%. PCE up to 29.8% is achieved with a 60 kΩ load. Simulation results show that the new circuit is superior to conventional charge pumps.

关键词： CMOS integrated circuits

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The Parasitic Effects Induced by the Contact in RRAM with MIM Structure

The Parasitic Effects Induced by the Contact in RRAM with MI...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Lijie Zhang Ru Huang Albert Z.H.Wang Dake Wu Runsheng Wang Yongbian Kuang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Dept.of Electrical Engineering University of CaliforniaRiversideCA 92521USA

This paper has reported a programmable switch composed of copper-doped-SiO sandwiched between Cu top electrode and inert W bottom electrode. Reproducible rectifying-like I-V performance was found in the device with top electrode（TE）,while with regard to the cell without TE,no rectifying-like I-V characterization was *** rectifying-like I-V curve is properly caused by electrode *** further prove the effect of TE,R retention behavior of the device with TE and without TE were *** testing results clearly showed that the R retention property of device with TE was worse than that without *** propose a model for the interface between top electrode and copper-doped-SiO to interpret this rectifying-like performance,which indicates that interface rectifying-like effect emerges when on-resistance is comparable with the resistance of diode-like junction between metal contact and *** results suggest that optimizing interface condition or adjusting resistive material with large on-resistance is essential for robust MTM RRAM design.

关键词： The Parasitic Effects Induced by the Contact in RRAM with MIM Structure MIM

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Design of an integrated 20 W × 2 class-D audio power amplifier in 0.8 μm BCD technology

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第5期29卷 988-992页

作者： Liu, Lianxi Zhu, Zhangming Yang, Yintang Guo, Wei Shi, Bin Microelectronics Institute Xidian University Xi'an 710071 China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xi'an 710071 China

This paper presents a 20 W × 2 class-D audio power amplifier with high efficiency in a 0.8 μm BCDMOS process. The amplifier is capable of driving 2 × 8 loads from a 18 V power supply at more than 85% power efficiency, and its maximum output power is more than 20W × 2. The circuit detail of the output stage, over-current protection, and rail-to-rail comparator are also presented. Through analysis of the LDMOSFET cross section, the impact of the parasitical effect on the distortion of the output is discussed. Finally, the experimental results of this work are presented.

关键词： Power amplifiers

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Enhanced device performance of AlGaN/GaN HEMTs using thermal oxidation of electron-beam deposited aluminum for gate oxide

Enhanced device performance of AlGaN/GaN HEMTs using thermal...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Hongwei Chen Jinyan Wang Chuan Xu Min Yu Yang Fu Zhihua Dong Fujun Xu Yilong Hao Cheng P. Wen Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Research Center for Wide Gap Semiconductor School of Physics Peking University China

ISBN: (纸本)9781424421855

We report on an AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) using thermal oxidation of electron-beam deposited aluminum as the gate dielectric. This novel dielectric deposition process is simple, and less expensive than electron cyclotron resonance (ECR) plasma oxidation of Al or atomic layer deposited (ALD) Al 2 O 3 . The X-ray Photoelectron Spectroscopy (XPS) Ols spectrum showed that the Al 2 O 3 with a bandgap of 7.8 eV was obtained in this specimen. The resulted MOS-HEMT exhibits several orders of magnitude lower gate leakage, larger drain saturation current and larger gate voltage swing compared to a conventional AlGaN/GaN high-electron-mobility transistor (HEMT) of similar design. The MOS-HEMT is therefore a viable alternative to regular HEMTs for high-power, high-frequency and high-temperature applications.

关键词： Aluminum gallium nitride Gallium nitride HEMTs MODFETs Oxidation Dielectrics Electrons Cyclotrons Resonance Plasma x-ray sources

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Organic Field Effect Transistors Having Hundreds of Nanometers Long Channels

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MRS Online Proceedings Library 2008年第1期1091卷 1-6页

作者： Liwei Shang Ming Liu Deyu Tu Lijuan Zhen Ge Liu Xinghua Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing People’s Republic of China

This work studied systemically the device characteristics when the OFETs’ channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10−2 cm2/Vs into 10m5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size.

关键词： nanoscale organic thin film

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Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Oxide-based RRAM switching mechanism: A new ion-transport-re...

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International Electron devices Meeting (IEDM)

作者： B. Gao S. Yu N. Xu L.F. Liu B. Sun X.Y. Liu R.Q. Han J.F. Kang B. Yu Y.Y. Wang Institute of Microelectronics Ministry of Education Peking University and Key Laboratory of Microelectronic Devices and Circuits Beijing China College of Nanoscale Science and Engineering State University of New York Albany NY USA

This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.

关键词： Spontaneous emission Equations Electrons microelectronics Random access memory Low voltage Scalability Electrodes Bismuth Boundary conditions

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Simple method of surface parameter extraction for gate schottky contact in 4H-SiC MESFET

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第3期29卷 458-460页

作者： Lu, Hongliang Zhang, Yimen Zhang, Yuming Che, Yong Sun, Ming Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China Engineering College Armed Police Force Xi'an 710086 China

We investigate the effects of the surface states on the Schottky contacts in 4H-SiC MESFET. The Ti/Pt/Au gate metal contacts are deposited by electron beam evaporation and patterned by a lift-off process. Based on thermionic theory, a simple parameter extraction method is developed for determination of the surface states in metal/4H-SiC Schottky contacts. The interface state density and interface capacitance are calculated to be 4.386 × 1013 cm-2·eV-1 and 6.394 × 10-6 F/cm2, which are consistent with the device's terminal characteristics.

关键词： MESFET devices

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Influence of the trapping effect on temperature characteristics in 4H-SiC MESFETs

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第2期29卷 334-337页

作者： Lu, Hongliang Zhang, Yimen Zhang, Yuming Che, Yong Wang, Yuehu Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China Department of Ordnance and Transportation Engineering College of CAPF Xi'an 710086 China

Based on the DC model and the self-heating model of SiC MESFETs, the self-heating effect is investigated in detail. The back-gated effect and its influence on high temperature characteristics are studied. The simulation results show that the activation energy of the traps is 1.07 eV with a capture cross section of 1 × 10-8 cm2. The back-gate potential increases as trap concentration increases, and it reaches -3 V at room temperature. As the drain voltage increases, the back-gate potential decreases. The proposed model is valuable in the design of high-power and high-temperature applications.

关键词： MESFET devices

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Organic, bistable devices with AgTCNQ charge transfer complex by vacuum co-deposition

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第1期29卷 50-54页

作者： Tu, Deyu Ji, Zhuoyu Shang, Liwei Liu, Ming Wang, Congshun Hu, Wenping Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Beijing National Laboratory of Molecular Sciences Institute of Chemistry Chinese Academy of Sciences Beijing 100080 China Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing 100080 China

The AgTCNQ thin-film was prepared by vacuum vapor co-deposition and characterized by infrared spectral analysis, and then a uniform AgTCNQ (TCNQ=7, 7, 8, 8-tetracyanoquinodimethane) thin-film layer was sandwiched in a Ti/AgTCNQ/Au crossbar structure array as organic bistable devices (OBD). A reversible and reproducible memory switching property, caused by intermolecular charge transfer (CT) in the AgTCNQ thin-film, was observed in the organic bistable devices. The positive threshold voltage from the high impedance state to the low impedance was about 3.8-5 V, with the reverse phenomenon occurring at a negative voltage of -3.5-4.4 V, lower than that with a CuTCNQ active layer. The crossbar array of OBDs with AgTCNQ is promising for nonvolatile organic memory applications.

关键词： Switching

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An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

An analytic surface potential based non-charge-sheet poly-Si...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Jinhua Hu Jian Zhang Lining Zhang Feng Liu Jin He TSRC Key Laboratory of Microelectronic Devices and Institute of Microelectronics School of Electronics and Computer Science Peking University China Peking University Beijing Beijing CN

An analytic surface potential based non-charge-sheet model for poly-silicon thin film transistors (poly-Si TFTs) is proposed in this paper with consideration of the substrate and film thickness effects. The 1-D Poissonpsilas equation with dopant, mobile, and the trap charge terms is first solved to obtain accurate yet continuous channel potentials physically. An analytic non-charge-sheet drain current model is then derived from Pao-Sahpsilas dual integral as a function of the channel potentials at the source end and drain end. The extensive comparison between the presented model prediction and the 2-D numerical simulation is done, proving accuracy of the developed model. The presented channel potential relation and the physics based TFT drain current model may be useful for device scientists and circuit engineers to further understand TFT device physics and test TFT circuit performance.

关键词： Thin film transistors Substrates MOSFET circuits Predictive models Physics Helium Semiconductor process modeling Poisson equations Numerical simulation Circuit testing

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