A VDMOS integrated in a 170 V scan-driver chip of a plasma display panel (PDP) is described, which is based on epitaxial bipolar-CMOS-DMOS (BCD) technology. Some key considerations and parameters of the design are dis...
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A VDMOS integrated in a 170 V scan-driver chip of a plasma display panel (PDP) is described, which is based on epitaxial bipolar-CMOS-DMOS (BCD) technology. Some key considerations and parameters of the design are discussed. The thickness of epitaxial layer is 17 μm, the area of a single VDMOS structure cell is 324 μm2, and only 18 photoetching steps are needed in the development process. It is also compatible with standard CMOS, bipolar, and p-LDMOS devices. The breakdown voltage of VDMOS in the process control module (PCM) is more than 200 V. Five kinds of VDMOS modules are integrated in 64 channel PDP scan-driver IC, and on-line system verification is done on a LG-model-42v6 PDP.
The plasma-induced damage for p-GaN by inductively coupled plasma (ICP) etching with Cl2/N2 gas chemistry was studied. Effects of ICP power, RF power, chamber pressure, and Cl2 percentage on the physical and electrica...
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The plasma-induced damage for p-GaN by inductively coupled plasma (ICP) etching with Cl2/N2 gas chemistry was studied. Effects of ICP power, RF power, chamber pressure, and Cl2 percentage on the physical and electrical characteristics of p-GaN were investigated. The results show that the surface roughness is relatively independent of these etching conditions and shows fairly smooth morphology (RMS<1.2 nm);the surface morphology has no direct effect on the electrical characteristics of p-GaN, and the deterioration of ohmic contact to the etched p-GaN is due to a decrease in hole concentration in the near-surface region through the creation of shallow donor states rather than surface roughening.
A gas fluid model for chemical vapor deposition processes is presented. Geometrical shape of susceptor has been designed based on the calculation and simulation with COMSOL program. The results show that the changes o...
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A gas fluid model for chemical vapor deposition processes is presented. Geometrical shape of susceptor has been designed based on the calculation and simulation with COMSOL program. The results show that the changes of susceptor shape have obvious effects on the distribution of gas fluid on the substrate. Gas fluid on the surface is uniformly distributed when the susceptor has a certain angle. This result is helpful for obtaining the high quality silicon carbide epitaxial layers.
A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...
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A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
The diffusion behavior of vanadium (V) implanted in SiC is investigated by secondary ion mass spectrometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not observed ...
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The diffusion behavior of vanadium (V) implanted in SiC is investigated by secondary ion mass spectrometry. Significant redistribution, especially out-diffusion of vanadium towards the sample surface, is not observed after 1650°C annealing. Higher carrier concentration is obtained due to a lack of compensation of vanadium in the surface region. The electrical characteristics of Ni contacts to V-implanted n-type 4H-SiC are investigated using a linear transmission line method. A specific contact resistance as low as 4.4 × 10-3 Ω·cm2 is achieved after annealing at 1050°C for 10 min in gas ambient consisting of 90% N2 and 10% H2. X-ray diffraction analysis shows the formation of Ni2Si and graphite phase at the interface after annealing. This provides the evidence that the carbon vacancies, resulting from the out-diffusion of carbon atoms from SiC, contribute to the formation of ohmic contact through the reduction of effective Schottky barrier height for the transport of electrons.
Based on the study of the existing form of doped single-walled carbon nanotubes (SWCNT) and the optimization of SWCNT crystal lattice, the band structure and density of states of nitrogen-doped SWCNTs are studied. We ...
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Based on the study of the existing form of doped single-walled carbon nanotubes (SWCNT) and the optimization of SWCNT crystal lattice, the band structure and density of states of nitrogen-doped SWCNTs are studied. We take a first-principle ultra-soft pseudopotential approach using plane waves that is based upon density functional theory, and use the CASTEP program package. The results show that the band gap narrows with the increase of nitrogen doping concentration.
The structural and territorial design of PZT thin film micro-sensors is processed. Using MEMS processes and standard silicon-based IC, the key techniques and technical conditions are obtained for PZT thin film micro-c...
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The structural and territorial design of PZT thin film micro-sensors is processed. Using MEMS processes and standard silicon-based IC, the key techniques and technical conditions are obtained for PZT thin film micro-cantilever beams based on silicon. At the same time, the preparation and micro-pattern etching techniques of PZT thin films are investigated by experiment. Finally, a PZT thin film micro-sensor is successfully etched and the experimental foundations are laid for the research and development of the system on a chip.
Large area transmission gratings (TG) for soft X-ray diffraction, with an area of 10 mm × 0.5 mm, a period of 500 nm, a line-space ratio of 1:1, and a gold thickness of 430 nm, are successfully fabricated by comb...
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Large area transmission gratings (TG) for soft X-ray diffraction, with an area of 10 mm × 0.5 mm, a period of 500 nm, a line-space ratio of 1:1, and a gold thickness of 430 nm, are successfully fabricated by combining electron beam lithography (EBL), X-ray lithography (XRL), and electroplating. In the processes, the mask of TG with well-defined three dimensional relief structures is originally patterned by EBL and then by electroplating. Next, the processes of XRL and electroplating allow us to efficiently and cost-effectively fabricate many copies of TG with the following two major advantages: high resolution and a vertical cross section. Moreover, the measurement of its efficiency has shown its perfect performance with respect to diffraction of EUV light.
The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model...
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The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.
Single-electron transistors with Silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation method. Transport characteristics of devices are investigated with different s...
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