The structural and territorial design of PZT thin film micro-sensors is processed. Using MEMS processes and standard silicon-based IC, the key techniques and technical conditions are obtained for PZT thin film micro-c...
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The structural and territorial design of PZT thin film micro-sensors is processed. Using MEMS processes and standard silicon-based IC, the key techniques and technical conditions are obtained for PZT thin film micro-cantilever beams based on silicon. At the same time, the preparation and micro-pattern etching techniques of PZT thin films are investigated by experiment. Finally, a PZT thin film micro-sensor is successfully etched and the experimental foundations are laid for the research and development of the system on a chip.
Large area transmission gratings (TG) for soft X-ray diffraction, with an area of 10 mm × 0.5 mm, a period of 500 nm, a line-space ratio of 1:1, and a gold thickness of 430 nm, are successfully fabricated by comb...
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Large area transmission gratings (TG) for soft X-ray diffraction, with an area of 10 mm × 0.5 mm, a period of 500 nm, a line-space ratio of 1:1, and a gold thickness of 430 nm, are successfully fabricated by combining electron beam lithography (EBL), X-ray lithography (XRL), and electroplating. In the processes, the mask of TG with well-defined three dimensional relief structures is originally patterned by EBL and then by electroplating. Next, the processes of XRL and electroplating allow us to efficiently and cost-effectively fabricate many copies of TG with the following two major advantages: high resolution and a vertical cross section. Moreover, the measurement of its efficiency has shown its perfect performance with respect to diffraction of EUV light.
The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model...
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The improvement of the characteristics of grooved-gate MOSFETs compared to the planar devices is attributed to the corner effect of the surface potential along the channel. In this paper we propose an analytical model of the surface potential distribution based on the solution of two-dimensional Poisson equation in cylindrical coordinates utilizing the cylinder approximation and the structure parameters such as the concave corner θ0. The relationship between the minimum surface potential and the structure parameters is theoretically analysed. Results confirm that the bigger the concave corner, the more obvious the corner effect. The corner effect increases the threshold voltage of the grooved-gate MOSFETs, so the better is the short channel effect （SCE） immunity.
Single-electron transistors with Silicon nanowire channel are successfully fabricated using TMAH anisotropic etching and thermal oxidation method. Transport characteristics of devices are investigated with different s...
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A novel structure of Si single-electron transistor (SET) with strong gate-dot coupling is developed, where the gate is fabricated just on the top of the transport channel with quantum dots (QDs) formed by anisotropic ...
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A new algorithm which is used to transform center-hollowed polygons of CIF format in microlithography pattern into rectangles of PG3600 format is presented. Firstly, polygons with inner loops are divided into triangle...
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A new algorithm which is used to transform center-hollowed polygons of CIF format in microlithography pattern into rectangles of PG3600 format is presented. Firstly, polygons with inner loops are divided into triangles or trapeziums by horizontal scanning beam. Furthermore, triangles or trapeziums are divided into rectangles and right-angled triangles. Finally, right-angled triangles are enveloped by rectangles or directly divided into rectangles. The advantage of the algorithm is that it doesn't divide center-hollowed polygons into convex polygons, it makes direct divisions for polygons. Hence, the algorithm remarkably reduces the total data of the rectangles divided. Meanwhile, the algorithm can also be used for the division of polygons without inner loops.
A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AlGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working t...
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A series of slow drain current recovery transients at different gate biases after a short-term stress are observed in an AlGaN/GaN HEMT. As the variation of the time constants of the transients is small, the working trap is determined to be electronic. A numerical simulation verifies this conclusion and reproduces the measured transients. The electron traps at different spatial positions in the device-on the ungated surface of the AlGaN layer, in the AlGaN barrier, and in the GaN layer are considered;corresponding behaviors in the stress and the transients are discussed;and for the simulated transients, agreement with and deviation from the measured transients are explained. Based on this discussion, we suggest that the measured transients are caused by the combined effects of a deep surface trap and a bulk trap in the GaN layer.
The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied. A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect m...
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The effects of several factors on mobility in 4H-SiC buried-channel (BC) MOSFETs are studied. A simple model that gives a quantitative analysis of series resistance effects on the effective mobility and field-effect mobility is proposed. A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility. The dependence of the peak field-effect mobility on series resistance follows a simple quadratic polynomial. The effects of uniform and exponential interface state distributions in the forbidden band on field-effect mobility are analyzed with an analytical model. The effects of non-uniform interface states can be ignored at lower gate voltages but become more obvious as the gate bias increases.
An approach for analyzing coupling RC interconnect delay based on 'effective capacitance' is presented. We compare this new method to the traditional method, which uses Miller capacitance. The results show tha...
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An approach for analyzing coupling RC interconnect delay based on 'effective capacitance' is presented. We compare this new method to the traditional method, which uses Miller capacitance. The results show that the new method not only improves the accuracy but also reflects the delay dependence on rise time. The method has the same complexity as the Elmore delay model and can be used in performance-driven routing optimization.
An improved heuristic algorithm for finding the optimal traversal route of a single probe to test MCM interconnects is presented in this *** algorithm is firstly used to get an initial result for the optimization prob...
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ISBN:
(纸本)1424401607
An improved heuristic algorithm for finding the optimal traversal route of a single probe to test MCM interconnects is presented in this *** algorithm is firstly used to get an initial result for the optimization problem,and then simulated annealing algorithm is used to improve the result dramatically. Simulation shows that the new novel heuristic algorithm is effective to solve single probe routing optimization problem.
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