First generation proximity X-ray lithography (PXL) has been used for gate definition in monolithic microwave integrated circuits (MMIC) manufacturing line successfully, to extend PXL to 50 nm node and beyond, second g...
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First generation proximity X-ray lithography (PXL) has been used for gate definition in monolithic microwave integrated circuits (MMIC) manufacturing line successfully, to extend PXL to 50 nm node and beyond, second generation PXL should be presented. The principle of second generation PXL and the key factors impact on resolution are introduced, when the process factor of second generation PXL is equal to 0.8, for 50 nm and 35 nm node resolution, the gap between X-ray mask and wafer reach 10 mm and 5 mm respectively, it is demonstrated that second generation PXL has large process latitude;the detail structure, fabrication process and cost of nanometer X-ray mask are analyzed, for 100 nm node and below, the fabrication difficulty and cost of X-ray mask are low relatively, and with the development of E-beam direct writing ability, X-ray mask is more superior to its contender;some common X-ray resist performances are described, high performance X-ray resist will not be an obstruction of PXL development;PXL stepper and X-ray source are also discussed, the R and D of point X-ray source is extremely important to the development of second generation PXL;the status of second generation PXL is also introduced finally, although PXL industry base is better than other next generation PXL, it is worse than optical lithography, ultra-large scale integrated circuits production will really accept PXL or not is not yet known until now.
In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format...
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In order to develop the format conversion software that can operate in the Windows system and also can in the L-EDIT, the new algorithm of graphics along border division is introduced which used for the pattern format conversion from CIF format to PG3600 format. The algorithm application on the division from circles or polygons into rectangles is discussed. It has obvious advantages for the division of irregular graphics in comparison with some other common algorithms.
A new type phase shift mask-sidewall chrome attenuated phase shift mask (SCAPSM) is presented. Compared to conventional attenuated phase shift mask, only two process steps are added, but its lithography resolution can...
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A new type phase shift mask-sidewall chrome attenuated phase shift mask (SCAPSM) is presented. Compared to conventional attenuated phase shift mask, only two process steps are added, but its lithography resolution can be improved greatly. With reference to exposure parameters of ArF scanner TWINSCAN XT:1400E, the SCAPSM exposure process is studied using optical lithography simulation software PROLITH. The resolution of dry 193 nm optical lithography can be improved to 50 nm when using SCAPSM + OAI.
This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown vol...
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This paper analyzes the relation between the boundary curvature radius of the drain region and the breakdown voltage of RF RESURF LDMOS. The bending of the curve in the RESURF technology can increase the breakdown voltage greatly. Analysis and simulation prove that the high breakdown voltage and much lower on-resistance in the same device profile can be maintained by an impurity dose or by increasing the thickness of the drift region and reducing boundary curvature radius of the drain region under the REUSRF principle.
The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible...
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The progress and challenge on quantum mechanism nano-devices such as single-electron transistors (SET), resonan tuneling diodes (RTD), and molecular devices are investigated and discussed. The SET with CMOS compatible technology i successfully fabricated, and the Coulomb blockade effect is clearly observed. AlAs/GaAs/In0.1Ga0.9As/GaAs/AlAs double barrier resonant tunneling diodes (DBRTDs) grown on semi-insulated GaAs substrate with molecular beam epitaxy are demonstrated. With ringed collector and thin barriers, the devices exhibit a maximum PVCR of 13.98 and a peak current density;of 89 kA/cm2 at room temperature. Finally, the progress of molecular memory with cross-bar structure is summarized.
A modeling of the minority carrier lifetime and impact ionization coefficients of GaN is presented. Then the simulation of an npn AlGaN/GaN heterojunction bipolar transistor (HBT) using a drift-diffusion transport mod...
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A modeling of the minority carrier lifetime and impact ionization coefficients of GaN is presented. Then the simulation of an npn AlGaN/GaN heterojunction bipolar transistor (HBT) using a drift-diffusion transport model is executed. The turn-on, offset, and saturation voltages of the device are expressed analytically. Simulation results show that the high turn-on, offset, and saturation voltages of the practical device result from the high base sheet resistance and the nonohmic characteristics of the base contact, which are a reference for the device fabrication.
Based on simulation, the characteristics and mechanisms of failure on a deep submicron grounded-gate n-channel MOS (GGNMOS) are studied under TLP (transmission line pulse) stress. The conclusion is drawn from the anal...
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Based on simulation, the characteristics and mechanisms of failure on a deep submicron grounded-gate n-channel MOS (GGNMOS) are studied under TLP (transmission line pulse) stress. The conclusion is drawn from the analysis that the resistor in series with the gate can reduce the maximum drain voltage;and the electric field across the gate oxide can be enhanced due to the existence of the overlap capacitance between the gate and drain under TLP stress. The electric field across the gate oxide will increase as the rise-time of the applied TLP pulse decreases, which will lead to a premature breakdown of gate oxide. Simulation results show that the overlap capacitance of the gate and drain and the resistor in series with the gate is very important to the turn-on characteristic and electrostatic discharge (ESD) patience voltage of the GGNMOS protection structure. These can be provided for future TLP tests and standardization.
The physical model of the AlGaN based p-i-n photodetector is built on the base of the coupled drift-diffusion equation. Spectral responsivity curves of various AlGaN p-i-n photodetectors and the influence of polarizat...
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The physical model of the AlGaN based p-i-n photodetector is built on the base of the coupled drift-diffusion equation. Spectral responsivity curves of various AlGaN p-i-n photodetectors and the influence of polarization at the interface of AlGaN/GaN heterostructure on the UV/solar rejection ratios of p-GaN/i-Al0.33Ga0.67N/n-GaN inverted heterostructure photodetectors (IHPs) are analyzed. The results show that the p-type layer imposes an important influence on the spectra responsivity of the AlGaN based p-i-n photodetecotrs, and the optimization of the p type layer is an effective method of significantly unproving the spectra responsivity. In order to get high UV/solar rejection ratios, the solar-blind IHPs should work best on the unbiased condition. When the polarization is considered with zero bias, the UV/solar rejection ratios of Ga-faced solar-blind p-GaN/i-Al0.33Ga0.67N/n-GaN IHPs are 750, which meets the Tarsa's experiment result of about three orders of magnitude.
AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphirt substrates by low-pressure MOCVD technique. AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same d...
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AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphirt substrates by low-pressure MOCVD technique. AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same device processes. The effects of an AlN spacer layer on the device performance of AlGaN/GaN HEMTs are studied by comparing the DC characteristics of these two different devices.
Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are m...
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Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are measured by new experimental methods. The reliability of flash memory cells is investigated using the capacitance coupling effect model. The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide.
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