Based on simulation, the characteristics and mechanisms of failure on a deep submicron grounded-gate n-channel MOS (GGNMOS) are studied under TLP (transmission line pulse) stress. The conclusion is drawn from the anal...
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Based on simulation, the characteristics and mechanisms of failure on a deep submicron grounded-gate n-channel MOS (GGNMOS) are studied under TLP (transmission line pulse) stress. The conclusion is drawn from the analysis that the resistor in series with the gate can reduce the maximum drain voltage;and the electric field across the gate oxide can be enhanced due to the existence of the overlap capacitance between the gate and drain under TLP stress. The electric field across the gate oxide will increase as the rise-time of the applied TLP pulse decreases, which will lead to a premature breakdown of gate oxide. Simulation results show that the overlap capacitance of the gate and drain and the resistor in series with the gate is very important to the turn-on characteristic and electrostatic discharge (ESD) patience voltage of the GGNMOS protection structure. These can be provided for future TLP tests and standardization.
The physical model of the AlGaN based p-i-n photodetector is built on the base of the coupled drift-diffusion equation. Spectral responsivity curves of various AlGaN p-i-n photodetectors and the influence of polarizat...
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The physical model of the AlGaN based p-i-n photodetector is built on the base of the coupled drift-diffusion equation. Spectral responsivity curves of various AlGaN p-i-n photodetectors and the influence of polarization at the interface of AlGaN/GaN heterostructure on the UV/solar rejection ratios of p-GaN/i-Al0.33Ga0.67N/n-GaN inverted heterostructure photodetectors (IHPs) are analyzed. The results show that the p-type layer imposes an important influence on the spectra responsivity of the AlGaN based p-i-n photodetecotrs, and the optimization of the p type layer is an effective method of significantly unproving the spectra responsivity. In order to get high UV/solar rejection ratios, the solar-blind IHPs should work best on the unbiased condition. When the polarization is considered with zero bias, the UV/solar rejection ratios of Ga-faced solar-blind p-GaN/i-Al0.33Ga0.67N/n-GaN IHPs are 750, which meets the Tarsa's experiment result of about three orders of magnitude.
AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphirt substrates by low-pressure MOCVD technique. AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same d...
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AlGaN/GaN and AlGaN/AlN/GaN heterostructure two-dimensional electron gas materials are grown on sapphirt substrates by low-pressure MOCVD technique. AlGaN/GaN HEMTs and AlGaN/AlN/GaN HEMTs are fabricated by the same device processes. The effects of an AlN spacer layer on the device performance of AlGaN/GaN HEMTs are studied by comparing the DC characteristics of these two different devices.
Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are m...
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Based on the negative gate source-side erased flash memory cell, three conduction mechanisms causing stress-induced leakage current are studied. The voltage shifts which cause steady-state and transient currents are measured by new experimental methods. The reliability of flash memory cells is investigated using the capacitance coupling effect model. The results show that the cell reliability under a low electric field stress is mainly affected by the carriers charging and discharging inside the oxide.
In integrated circuits, the defects associated with photolithography are assumed to be in the shape of circular discs in order to perform the estimation of yield and fault analysis. However, real defects exhibit a gre...
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In integrated circuits, the defects associated with photolithography are assumed to be in the shape of circular discs in order to perform the estimation of yield and fault analysis. However, real defects exhibit a great variety of shapes. In this paper, a novel yield model is presented and the critical area model of short circuit is correspondingly provided. In comparison with the circular model currently available, the new model takes the similarity shape to an original defect, the two-dimensional distributional characteristic of defects, the feature of a layout routing and the character of yield estimation into account. As for the aspect of prediction of yield, the experimental results show that the new model may predict the yield caused by real defects more accurately than the circular model does. It is significant that the yield is accurately estimated and improved using the proposed model.
An ESD protection circuit which uses a GG-NMOS structure is presented. The operating principle and test results are depicted. An improved project, gate-couple technology, on the circuit is presented, and the anticipat...
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An ESD protection circuit which uses a GG-NMOS structure is presented. The operating principle and test results are depicted. An improved project, gate-couple technology, on the circuit is presented, and the anticipated effect is achieved. The ability of the circuit achieves class 2 of the human-body model. It is also indicated that ESD induces damage of the gate oxide with microcosmic mechanisms, where ESD occurs based on simulation.
A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zo...
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A technique that combines electron beam lithography and hot embossing lithography is used to replicate Fresnel zone plate. The Fresnel zone plate mold for hot embossing lithography, with 196 zones, 250 nm outermost zone width and 196 μm diameter, is fabricated using electron beam lithography. The primary experiment results indicate that this method is a high resolution, high throughput and low cost way to replicate pattern in deep submicron scale and has good repeatability and availability.
Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-*** results indicate that the increase in slope of carrier concentration star...
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Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-*** results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.
A mixed Genetic Algorithm and Simulated Annealing (GASA) algorithm is used for the placement of symmetrical *** proposed algorithm includes 2 stage *** the first stage process it optimizes placement solutions globally...
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A mixed Genetic Algorithm and Simulated Annealing (GASA) algorithm is used for the placement of symmetrical *** proposed algorithm includes 2 stage *** the first stage process it optimizes placement solutions globally using *** the second stage process it locally improves *** overcomes the slow convergence of genetic algorithm in the late phase of the process of genetic *** results show that GASA consumes less CPU time than GA and could achieve performance as good as versatile placement and routing tool in terms of placement cost.
Strained Si1-xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450°C and 480°C, respectively...
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Strained Si1-xGex and Si materials are successfully grown on Si substrate by ultraviolet light chemical vapor deposition under ultrahigh vacuum at a low substrate temperature of 450°C and 480°C, respectively. At such low temperature, autodoping effects from the substrate and interdiffusion effects at each interface could be suppressed efficiently. The strained Si1-xGex. and multilayer Si1-xGex/Si structures are examined by X-ray diffraction, SMIS, etc., and it is found that the materials have good crystallinity and the rising and falling edges are steep. The technique has a capability of growing high-quality Si1-xGex/Si strained layers.
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