检索结果-内蒙古大学图书馆

An Implantable Readout Circuit with On-Chip Reference Buffer for the Detection of Biological Electrical Signals Employing Artificial Intelligence Algorithms to Compensate and Calibrate 3

An Implantable Readout Circuit with On-Chip Reference Buffer...

引用

3rd International Conference on Artificial Intelligence and Advanced Manufacture, AIAM 2021

作者： Zhou, Fei Zhang, Yacong Zhu, Runkun School of Software and Microelectronics Peking University Beijing China Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Beijing China

ISBN: (纸本)9781450385046

This paper proposes an implantable readout circuit with on-chip reference voltage. Meanwhile, artificial intelligence algorithms are used to dynamically adjust the calibration and signal processing of the circuit. In the reference buffer block, in order to avoid the voltage reference drifting due to excessive load, an offset compensation DAC with current provided by internal current source is applied to solve the problem of drawing current from voltage reference. Moreover, a low-dropout (LDO) regulator with improved transient responses is proposed to provide voltage reference for driving the successive approximation register (SAR) analog-to-digital converter (ADC) capacitor array. In the digital control block, through the processing of artificial intelligence algorithms, the performance of the entire circuit has been significantly improved. The readout circuit is implemented in standard 180-nm 1.8V/5V CMOS process. The LDO achieves only a 5.4μW static power consumption in the ADC conversion process. The power consumption of the bandgap reference circuit, bias buffer and LDO is 12.6μW, leading to a 57.2μW total power cost for the readout circuit. The digital calibration algorithm makes the ENOB of SAR ADC reaches 9.78. © 2021 ACM.

关键词： Timing circuits

来源：评论

学校读者我要写书评

暂无评论

High-performance solar-blind photodetector arrays constructed from Sn-doped Ga_(2)O_(3)microwires via patterned electrodes

引用

Nano Research 2022年第8期15卷 7631-7638页

作者： Ya-Cong Lu Zhen-Feng Zhang Xun Yang Gao-Hang He Chao-Nan Lin Xue-Xia Chen Jin-Hao ZangWen-Bo Zhao Yan-Cheng Chen Lei-Lei Zhang Yi-Zhe Li Chong-Xin Shan Henan Key Laboratory of Diamond Optoelectronic Material and Devices Key Laboratory of Material physicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Vacuum Interconnected Nanotech Workstation(Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China

Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth *** semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than ***,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 ***,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes *** clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging *** results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.

关键词： Sn-doped Ga_(2)O_(3) microwires photodetector linear array solar-blind imaging

来源：评论

学校读者我要写书评

暂无评论

Investigation of Gate Injection Charges Behavior on FeFETs with TiN/Al2O3/Hf0.5Zr0.5O2/SiON/Si Structure by Analyzing ISPP/ISPE 17

Investigation of Gate Injection Charges Behavior on FeFETs w...

引用

17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Yang, Jia Han, Runhao Dai, Saifei Hu, Tao Shao, Xianzhou Li, Kanyi Fan, Wenbo Sun, Xiaoqing Chai, Junshuai Xu, Hao Han, Kai Wang, Xiaolei Wang, Wenwu Ye, Tianchun Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China The School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China School of Physics and Electronic Information Weifang University Shandong261061 China

ISBN: (纸本)9798350361834

In this work, we study the behavior of the gate injection charges during the programming/erasing (PGM/ERS) operation in Hf0.5Zr0.5O2-based ferroelectric field-effect transistors (FeFETs) with TiN/Al2O3/Hf0.5Zr0.2/SiON/Si (MAFIS) structure. The maximum memory window (MW \max) increases with an increasing Al2O3 top dielectric layer thickness. This is caused by the increase of the equivalent oxide thickness (EOT), and not the increased gate injection charge. Besides, the ISPP/ISPE slope of the MAFIS increases as the thickness of the structure increases, which can reduce the write voltage and reduce the power consumption. In addition, the holes injection from the metal gate after PGM operation is increased after FE layer wake-up. However, electron injection cannot increase as the holes during ERS operation. The key to improving the retention of the MWmax is to make the electrons injected from the gate retained at ERS operation. © 2024 IEEE.

关键词： Hafnium compounds

来源：评论

学校读者我要写书评

暂无评论

Ultrasensitive fiber-optic sensor for AI-enhanced voice recognition and 360° acoustic detection

引用

IEEE Sensors Journal 2025年第11期25卷 19302-19307页

作者： Yu, Yang Tian, Nong Wang, Ziliang Gan, Xin Luo, Jianyi Xiao, Ting-Hui Wuyi University School of Applied Physics and Materials Jiangmen529020 China Zhengzhou University Henan Key Laboratory of Diamond Opto electronic Materials and Devices School of Physics and Microelectronics Zhengzhou450052 China Henan Academy of Sciences Institute of Quantum Materials and Physics Zhengzhou450046 China The University of Tokyo Department of Chemistry School of Science Tokyo113-0033 Japan

Fiber-optic sensors offer distinct advantages for acoustic signal detection under extreme conditions due to their immunity to electromagnetic interference and capability for remote sensing. However, limitations in sensitivity, response time, and directionality have restricted their broader application in real-world scenarios. In this work, we demonstrate an ultrasensitive fiber-optic sensor featuring a record-low detection limit of 0.4 mPa and a rapid response time of 6 μs for acoustic detection. This sensor is based on a microfiber coupler that provides an exceptionally broad acoustic response range, spanning from 20 Hz to 25 kHz, with a frequency resolution of 0.04 Hz at 200Hz. Leveraging these capabilities, the sensor achieves a remarkable 97.1% accuracy in intelligent voice recognition when integrated with deep learning algorithms. Additionally, the sensor is equipped to recognize directional acoustic signals and enables 360° full-range acoustic source localization with a dual-sensor configuration. This versatile sensor holds substantial potential for practical applications in human-machine interfaces and sonar positioning systems. © 2001-2012 IEEE.

关键词： Microfibers

来源：评论

学校读者我要写书评

暂无评论

Study of VthDegradation Mechanism in FeFET with TiN/Al2O3/HfO2/Al2O3/Hf0.5Zr0.5O2/SiOx/Si Structure 17

Study of VthDegradation Mechanism in FeFET with TiN/Al2O3/Hf...

引用

17th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2024

作者： Han, Runhao Yang, Jia Hu, Tao Bai, Mingkai Ding, Yajing Shao, Xianzhou Dai, Saifei Sun, Xiaoqing Chai, Junshuai Xu, Hao Han, Kai Wang, Xiaolei Wang, Wenwu Ye, Tianchun Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China School of Physics and Electronic Information Weifang University Shandong261061 China

ISBN: (纸本)9798350361834

In this work, we investigate the degradation of the threshold voltage after erasing operation in HfO 2. -based ferroelectric silicon channel field-effect transistors ( HfO 2 SiFeFETs) with a TiN / Al 2 O3 / HfO2 / Al 2 O3 / Hf 0.5 Zr 0.5 O2/ SiO x Si (MAHAFIS) structure. We found that the de-trapping of charges injected from the metal gate is the main factor for the degradation. Moreover, the concentrated distribution of trap energy levels exacerbates this issue. This differs from the FeFET with the T i N H f 0.5 Z r 0.5 O2 S i O x S i (MFIS) structure, where the degradation is due to the increased trapped charges injected from the silicon substrate. Therefore, for FeFET with a top interlayer, increasing deep level traps and reducing charge detrapping is crucial to suppress the degradation of the threshold voltage after erasing operation. © 2024 IEEE.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

Recent progress of Ga_(2)O_(3)materials and devices based on the low-cost,vacuum-free Mist-CVD epitaxial growth method

引用

Fundamental Research 2024年第5期4卷 1292-1305页

作者： Zeyulin Zhang Pengru Yan Qingwen Song Haifeng Chen Wentao Zhang Hao Yuan Fengyu Du Dinghe Liu Dazheng Chen Yuming Zhang Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory School of MicroelectronicsXidian UniversityXi'an 710071China Xidian-Wuhu Research Institute Wuhu 241000China Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi'an University of Posts and TelecommunicationsXi'an 710121China Guangxi Key Laboratory of Optoelectronic Information Processing School of Optoelectronic EngineeringGuilin University of Electronic TechnologyGuilin541004China

Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers,especially for the potential application in power ***,Ga_(2)O_(3)material has natural ultraviolet detection ability for photodetectors due to its ultrawide *** future commercial applications put forward an urgent require for high-quality epitaxial Ga_(2)O_(3)material in an efficient growth method at a lower *** there are some conventional methods for single crystal Ga_(2)O_(3)film epitaxial growth such as MBE and MOCVD,these methods always need a vacuum growth environment and expensive *** a fast-growing method,Mist-CVD gives the growth of Ga_(2)O_(3)in a vacuum-free,process-simple,and low-cost method,which will greatly reduce the cost and facilitate the development of Ga_(2)O_(3).This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga_(2)O_(3),recent progress in the Ga_(2)O_(3)film epitaxial growth,and various device properties based on the Mist-CVD *** work aims to provide help for the development of Ga_(2)O_(3)material growth and device applications.

关键词： Gallium oxide Epitaxy growth Mist-CVD Single crystals Gallium oxide devices

来源：评论

学校读者我要写书评

暂无评论

NeuroHexa: A 2D/3D-Scalable Model-Adaptive NoC Architecture for Neuromorphic Computing

NeuroHexa: A 2D/3D-Scalable Model-Adaptive NoC Architecture ...

引用

Design, Automation and Test in Europe Conference and Exhibition

作者： Yi Zhong Zilin Wang Yipeng Gao Xiaoxin Cui Xing Zhang Yuan Wang School of Integrated Circuits Peking University Beijing China Beijing Advanced Innovation Center for Integrated Circuits Beijing China Key Laboratory of Microelectronics Devices and Circuits (MoE) MPW Center Peking University Beijing China

ISBN: (数字)9783982674100

ISBN: (纸本)9798331534646

Neuromorphic computing has endeavored a novel computing paradigm that entails a bio-inspired architecture to reproduce the remarkable functionalities of the human brain, such as massively parallel processing and extremely low-power consumption. However, those promising merits can be greatly canceled by the mismatched communication infrastructure in large-scale hardware implementation, in view of the vast degree of neural connectivity, the unstructured spike dataflow, and the unbalanced model workload assignment. In an effort to tackle those challenges, this work presents NeuroHexa, a network-on-chip (NoC) architecture intended for multi-core neuromorphic design. NeuroHexa adopts a customized intra-chip hexagonal topology, which can be further cascaded in 6 directions by either 2D or 3D chiplet integration. Designed in globally asynchronous, locally synchronous (GALS) methodology, a group of processing nodes can operate in independent work pace to further improve resource utilization. To satisfy the varied requirement of data reuse across the chip, NeuroHexa proposes a flexible multicast routing mechanism to best adapt to the model-defined dataflow. And under a specific congestion scenario, NeuroHexa can switch its routing algorithm between deterministic routing and fully adaptive routing modes. The presented NoC router is evaluated in 28nm CMOS, where we achieve the maximal throughput as 179.2Gbps, and the best energy efficiency as 4.872pJ/packet at the area overhead of 0.0226mm 2 .

关键词： Semiconductor device modeling Adaptation models Three-dimensional displays Neuromorphic engineering Unicast Computer architecture Routing Throughput Topology Resource management

来源：评论

学校读者我要写书评

暂无评论

First Demonstration of High-Sensitivity (NEP-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3Photodetectors and Oxide Thin-Film-Transistors

First Demonstration of High-Sensitivity (NEP-1/2) Back-Illum...

引用

2022 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2022

作者： Qin, Yuan Lu, Congyan Yu, Zhaoan Yao, Zhihong Wu, Feihong Dong, Danian Zhao, Xiaolong Xu, Guangwei Zhang, Yuhao Long, Shibing Li, Ling Liu, Ming Institute of Microelectronics of Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integration Technology Beijing China School of Microelectronics University of Science and Technology of China Hefei China Virginia Polytechnic Institute and State University Center of Power Electronics Systems BlacksburgVA United States

ISBN: (纸本)9781665497725

We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fWHz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 W/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications. © 2022 IEEE.

关键词： Gallium compounds

来源：评论

学校读者我要写书评

暂无评论

A Hybrid Heterogeneous Neural Network Accelerator based on Systolic Array

A Hybrid Heterogeneous Neural Network Accelerator based on S...

引用

IEEE International Conference on Artificial Intelligence circuits and Systems (AICAS)

作者： Zilin Wang Yi Zhong Guang Chen Shuo Feng Youming Yang Xiaoxin Cui Yuan Wang School of Integrated Circuits Peking University Beijing China School of Software and Microelectronics Peking University Beijing China Beijing Advanced Innovation Center for Integrated Circuits Beijing China Key Laboratory of Microelectronics Devices and Circuits (MoE) MPW Center Peking University Beijing China

ISBN: (数字)9798350383638

ISBN: (纸本)9798350383645

Spiking neural networks (SNNs) and artificial neural networks (ANNs) are two methods to achieve artificial intelligence. Realizing the long-term and ambitious ideal of a universal artificial intelligence platform requires hardware that supports both SNN and ANN models. ANNs, such as convolutional neural networks (CNNs), are adept at extracting features and have achieved outstanding achievements in many fields. Due to the event-driven processing paradigm, SNNs can achieve competitive accuracy with minimal power usage. The weight accumulation of SNN and ANN is similar, but the activation function is significantly different. How to integrate SNN and ANN on one hardware platform is a challenge. In this paper, we propose a hybrid heterogeneous neural network accelerator that can support both SNN and ANN models. It also has good compatibility with the binary neural network (BNN) models. Our design is implemented on Xilinx XCKU115 FPGA, which can achieve the peak performance of 48.51GSOP/s (SNN) and 26.38GOP/s (ANN). The energy efficiency is 25.8GSOP/W (SNN) and 12.05GOP/W (ANN). Moreover, it supports the SNN-ANN fusion mode, where each row of processing elements (PEs) can independently perform SNN or ANN computation, allowing the design to fully leverage the respective strengths of SNN and ANN.

关键词： Computational modeling Artificial neural networks Spiking neural networks Feature extraction Systolic arrays Hardware Energy efficiency

来源：评论

学校读者我要写书评

暂无评论

High-speed electro-optic modulation in topological interface states of a one-dimensional lattice

引用

Light(Science & Applications) 2023年第9期12卷 1961-1970页

作者： Yong Zhang Jian Shen Jingchi Li Hongwei Wang Chenglong Feng Lei Zhang Lu Sun Jian Xu Ming Liu Ying Wang Yonghui Tian Jianwen Dong Yikai Su State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic EngineeringShanghai Jiao Tong UniversityShanghai 200240China Center for Advanced Electronic Materials and Devices Shanghai Jiao Tong UniversityShanghai 200240China Institute of Microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE School of Physical Science and TechnologyLanzhou UniversityLanzhou 730000 GansuChina State Key Laboratory of Optoelectronic Materials and Technologies&School of Physics Sun Yat-sen UniversityGuangzhou 510275China

lectro-optic modulators are key components in data communication,microwave photonics,and quantum *** bandwidth,energy efficiency,and device dimension are crucial metrics of ***,we provide an important direction for the miniaturization of electro-optic modulators by reporting on ultracompact topological modulators.A topological interface state in a one-dimensional lattice is implemented on a thin-film lithium-niobate integrated *** to the strong optical confinement of the interface state and the peaking enhancement of the electro-optic response,a topological cavity with a size of 1.6×140μm^(2)enables a large modulation bandwidth of 104 *** first topological modulator exhibits the most compact device size compared to reported LN modulators with bandwidths above 28 GHz,to the best of our knowledge.100 Gb/s non-return-to-zero and 100 Gb/s four-level pulse amplitude modulation signals are *** switching energy is 5.4 fJ/bit,owing to the small electro-optic mode volume and low *** topological modulator accelerates the response time of topological photonic devices from the microsecond order to the picosecond order and provides an essential foundation for the implementation of large-scale lithium-niobate photonic integrated circuits.

关键词： modulator interface lattice

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：